Brizon Inc is a USA-based company that produces microelectronic application products including CMP slurry additives, CMP cleaning solutions, and wafer storage buffer solutions. Their key products are Brite-ACP slurry additives that improve CMP efficiency and surface quality, and BriteClean-0 and BriteClean-1 cleaning solutions that improve post-CMP cleanliness and protect wafer surfaces. Test results show the Brizon products reduce particles, improve uniformity, and provide better surface roughness compared to competitors' products. Brizon's customized solutions and technical support help customers achieve better yield and process results.
2. Products:
• Microelectronic Application
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CMP Slurry additive
CMP cleaning Solutions
Wafer Storage Buffer Solution
• Smart Curable Products
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Flexible Screen Application
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LED Application
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High Temperature Resistance
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And low IR emission Application
3. Products for the Semiconductor Industry:
Brite-ACP : Slurry Additives to improve performance.
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Stabilize Slurry and Improve CMP efficiency
Reduce and/or Eliminate macro/micro scratches
Improve Uniformity of material removal
BriteClean-0 : CMP cleaning process
BriteClean-1 : CMP cleaning process
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•
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Improves post process surface cleanliness for particles and surface residuals.
Improves next layer of deposition
Protects both Metal and Oxide surfaces
Improves wafer Rinsability
5. Microelectronic application - CMP
Briteclean - 0/Plus
Briteclean - 1
Briteclean-ACP
Pre/Post
Cleaning Process
YES
YES
YES
Slurry Additives
YES
YES
YES
Storage/Buffer
NO
NO
YES
Need to mixing
Need to mixing
with BC-0/plus
Solely
2% - 5%
2% - 5%
1% - 4%
Application with BC-1 or BC-ACP
Usage
6. Examples of Application in Real Field FAB
Briteclean-0 and Briteclean-1 Mixed: Ratio 1:1 in 1.0% ~2% Aqueous media
Slurry applied: in MH837/MH834/MH814 (Cabot)
Pad applied: IC1000 (white pad --- Rodel/(Rom Haas)
Sub IV (black pad --- Rodel (Rom Haas))
Tool platforms Applied: 8" Mirra (Applied Materials); 8"
Ebara (Ebara); 8" 6DS-SP(Strausbaugh)
Wafer: Cu, Ni/Fe, Low key and Al2O3
7. • Yield Improvement – Very dramatically
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•
•
Improved within (WIW) wafer uniformity by ~1X
Enhanced Cleanliness
Improved Surface Roughness (NiFe<1nm)
• No need Additional Process
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Flexible condition
• Environmental Friendly
•
No corrosive, no high or very pH
9. Comparing SEM images of Silicon wafer surface
Slurry only
Slurry +
Brizon products
10. Principle of Slurry Additive
for CMP Applications
Slurry distribution on polishing pads is a critical factor
to achieve better WIW uniformity
Adding Brizon products into CMP slurries, the slurry
surface extension with IC series CMP pads was
modified to a form a uniformed slurry layer across the
whole wafer
Slurry Feed
Wafer
IC CMP Pad
16. Principle of Cleaning Process
for CMP Applications
Slurry
Dissolved/Dispersed into Advanced
Nonionic Surfactants, Slurry Chemistry
Trace Metals
Dispersed into Advanced
Nonionic Surfactants
Metal Ions
Complex to Chelate in
the Cleaning System
Aggressive
Corrosive
High/Low pH
Buffered by the Cleaning Solution
17. Post CMP&Cleaning AFM images (Cu plated wafer)
BriteClean Mixture
Competitor’s Cleaning Solution
18. Post CMP&Cleaning AFM images (Cu plated wafer)
BriteClean Mixture
Average Roughness(N=3x3):
Rms=0.29nm
Competitor’s Cleaning Solution
Average Roughness(N=3x3):
Rms=0.34nm
Roughness is better, surface residuals reduced.
19. Wafer Storage Buffer Solution-ACP
One customer request an application
Store the wafer in DI water, but surface materials was
etched, both metal and Oxide
Designed Brite-ACP, and currently is customer’s
production
No etching on surface materials up to 6hours in DI water
No detailed data was provided by customer
20. Principle of Prevention Processing
Mono-layer
on Surface
Prevents Redeposition of
Any Contamination and
Prevents Any Oxidation
Hydrophobic/Hydrophilic Balanced of the Mono-layer
Improve Rinsability
21. Sensor Circuit Measurement
Sensor dimension was designed per different usages.
4-point scheme minimizes contact resistance during probing
21
23. Conclusion – Advantages of Brite Slurry Add
• Stabilize slurry and efficient CMP
• Distribute Slurry uniformity to polishing pad
• Improve WIW uniformity
24. Conclusion-Advantages of BriteClean
Briteclean mixture reduces particle counts
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Efficient cleaning process
Much better surface roughness
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Surface protection
Much easier Process
• Mixture system
• No need change process
25. Conclusion – Advantages of Brite ACP
• Stabilize slurry and efficient CMP
• Protect oxidation on metal wafer
• Improve next layer of deposition
28. A Plethora of Materials
In Semiconductor Area
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Oxide, such as Al2O3
Colloidal SiO2
NiFeCo
Cu, Al, W
Polymers
Ru
Si
Et al
29. Background of Briteclean
Innovative Technology
Longer shelf life - over two years
Much easier control processes and environments
Much more efficient for the cleaning process
One process fit more applications
One Process with Briteclean(s) Can Clean all
Alumina
NiFeCo, Cu abrasives
CeO abrasives
Colloidal SiO2
Et al
31. Customer Testing Platform
BriteClean vs Competitor's
Full NiFe, Cu and Alumina
Particle Counts were measured by Tencor Surf scan
Various Cleaning Tools were used
Including Mirra, SSEC, DNS
33. pH Changes vs the Ratio of
BriteClean-0/BriteClean-1
8.5
8
7.85
7.5
7.2
7
pH
6.8
6.5
6.3
5.5
5
0
100%
BriteClean-1
10
20
30
40
50
60
70
Diluted 50 times in DI H2O
80
90
100
100%
BriteClean-0
Recommended Application: Briteclean-0/Briteclean-1 = 1:1
Diluted to 2%-5% times with DI H2O