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Brizon Inc (USA):
www.brizon.net
Yuxinhu@brizon.net
Products:
• Microelectronic Application
•
•
•

CMP Slurry additive
CMP cleaning Solutions
Wafer Storage Buffer Solution

• Smart Curable Products
•

Flexible Screen Application

•

LED Application

•

High Temperature Resistance

•

And low IR emission Application
Products for the Semiconductor Industry:
Brite-ACP : Slurry Additives to improve performance.
•
•
•

Stabilize Slurry and Improve CMP efficiency
Reduce and/or Eliminate macro/micro scratches
Improve Uniformity of material removal

BriteClean-0 : CMP cleaning process
BriteClean-1 : CMP cleaning process
•
•

•
•

Improves post process surface cleanliness for particles and surface residuals.
Improves next layer of deposition
Protects both Metal and Oxide surfaces
Improves wafer Rinsability
Components
• Non-ionic surfactants
• Metal inhibitors
• Anti-oxidant agents
• Chelating agent
• Particle removing agent
Microelectronic application - CMP
Briteclean - 0/Plus

Briteclean - 1

Briteclean-ACP

Pre/Post
Cleaning Process

YES

YES

YES

Slurry Additives

YES

YES

YES

Storage/Buffer

NO

NO

YES

Need to mixing

Need to mixing
with BC-0/plus

Solely

2% - 5%

2% - 5%

1% - 4%

Application with BC-1 or BC-ACP
Usage
Examples of Application in Real Field FAB
 Briteclean-0 and Briteclean-1 Mixed: Ratio 1:1 in 1.0% ~2% Aqueous media
 Slurry applied: in MH837/MH834/MH814 (Cabot)
 Pad applied: IC1000 (white pad --- Rodel/(Rom Haas)
Sub IV (black pad --- Rodel (Rom Haas))
 Tool platforms Applied: 8" Mirra (Applied Materials); 8"
Ebara (Ebara); 8" 6DS-SP(Strausbaugh)
 Wafer: Cu, Ni/Fe, Low key and Al2O3
• Yield Improvement – Very dramatically
•
•

•

Improved within (WIW) wafer uniformity by ~1X
Enhanced Cleanliness
Improved Surface Roughness (NiFe<1nm)

• No need Additional Process
•

Flexible condition

• Environmental Friendly
•

No corrosive, no high or very pH
Layer X CMP Comparison

Layer X CMP Performance Comparison
Wafer ID Existing
Slurry
1
2
3
4
5
6
7
8

Mean Metal
ALO
Thickness
Metal WIW Thickness
Oxide WIW Added
(FEI)-O
Sigma-O
(Nano)-O
Sigma-O
Paticles
261
7.3
267
10.2
217
257
8.1
261
8.2
198
265
2.4
273
3.6
229
263
8.3
268
9.4
363
251
6.1
261
7.5
107
278
5.9
283
6.9
267
255
6.9
267
8.1
271
263
7.2
267
7.8
400

Mean
Std. Dev.
3 Sigma

261.63
7.60
22.79

6.53
1.75
5.24

268.38
6.61
19.84

7.71
1.84
5.52

256.50
86.85
260.55

278
251
27

8.3
2.4
5.9

283
261
22

10.2
3.6
6.6

400
107
293

Max.
Min.
Range

Mean Metal Thickness (FEI)-O

Wafer ID
with Brite
Additives
1
2
3
4
5
6
7
8

Mean Metal
ALO
Thickness
Metal WIW Thickness
Oxide WIW Added
(FEI)-B
Sigma-B
(Nano)-B
Sigma-B
Paticles
263
3
249
2.7
30
251
4
267
2.1
0
265
4.2
253
3
139
256
2.9
263
1.9
271
258
3.1
262
2.4
0
261
3.3
262
2.9
225
260
4.1
261
2
57
266
2.8
265
2.5
68

Mean
Std. Dev.
3 Sigma

260.00
4.64
13.91

3.43
0.54
1.63

260.25
5.72
17.15

2.44
0.39
1.16

98.75
96.27
288.82

266
251
15

4.2
2.8
1.4

267
249
18

3
1.9
1.1

271
0
271

Max.
Min.
Range

Metal WIW Sigma-O

Mean Metal Thickness (FEI)-B

Metal WIW Sigma-B

9

285
280

8

275

7

270

6

265

5

260

4

255

3

250
245

2

240

1

235

0
1

2

3

4

5

6

ALO Thickness (Nano)-O

7

8

9

10

1

2

3

4

5

6

7

8

9

10

ALO Thickness (Nano)-B
Oxide WIW Sigma-O

290

Oxide WIW Sigma-B

12
280

10

270

8

260

6

250

4

240

2

230
1

2

3

4

5

6

7

8

9

10

0
1

2

3

4

5

6

7

8

9

10
Comparing SEM images of Silicon wafer surface
Slurry only

Slurry +
Brizon products
Principle of Slurry Additive
for CMP Applications
 Slurry distribution on polishing pads is a critical factor

to achieve better WIW uniformity
 Adding Brizon products into CMP slurries, the slurry
surface extension with IC series CMP pads was
modified to a form a uniformed slurry layer across the
whole wafer
Slurry Feed

Wafer
IC CMP Pad
Surf-Clean Data
For Competitor’s Clean Solution
Pre-Treatment

NiFe

Alumina

Post-Treatment
Surf-Clean Data
For Mixed BriteClean Solution
Pre-Treatment

NiFe

Alumina

Post-Treatment
Different Slurry Cleanability of
BriteClean vs Competitor’s
BriteClean mixed Solution
Con-1
Con-2

Alumina
-70
-22

NiFe
-66
-340

Competitor's Cleaning Solution
Con-1
Con-2

Alumina
190
1571

Particle Counts

NiFe
280
370
Different Method Cleanability of
BriteClean vs Competitor’s
BriteClean mixed Solution
Roller
Pencil

Alumina
10
-10

NiFe
24
-6

Competitor's Cleaning Solution
Roller
Pencil

Alumina
318
190

Particle Counts

NiFe
2985
280
BriteClean Mixture Initial
Cleaning Solution (Pre-)

Post
(PostCleaning Pre)

Tool-1

259

268

9

Tool-2

692

640

-52

Tool-3

675

123

-552

Tool-4

207

78

-129

Competitor's
Cleaning Solution

Initial
(Pre-)

Tool-1

477

1445

968

Tool-2

891

3065

2174

Tool-3

133

528

395

Tool-4

500

845

345

Alumina
NiFe

Alumina
NiFe

Post
(PostCleaning Pre)
Principle of Cleaning Process
for CMP Applications
 Slurry

Dissolved/Dispersed into Advanced
Nonionic Surfactants, Slurry Chemistry

 Trace Metals

Dispersed into Advanced
Nonionic Surfactants

 Metal Ions

Complex to Chelate in
the Cleaning System

 Aggressive
Corrosive
High/Low pH

Buffered by the Cleaning Solution
Post CMP&Cleaning AFM images (Cu plated wafer)
BriteClean Mixture

Competitor’s Cleaning Solution
Post CMP&Cleaning AFM images (Cu plated wafer)
BriteClean Mixture

Average Roughness(N=3x3):
Rms=0.29nm

Competitor’s Cleaning Solution

Average Roughness(N=3x3):
Rms=0.34nm

Roughness is better, surface residuals reduced.
Wafer Storage Buffer Solution-ACP
 One customer request an application
 Store the wafer in DI water, but surface materials was
etched, both metal and Oxide
 Designed Brite-ACP, and currently is customer’s

production
 No etching on surface materials up to 6hours in DI water

 No detailed data was provided by customer
Principle of Prevention Processing
 Mono-layer
on Surface

Prevents Redeposition of
Any Contamination and
Prevents Any Oxidation

 Hydrophobic/Hydrophilic Balanced of the Mono-layer

Improve Rinsability
Sensor Circuit Measurement

 Sensor dimension was designed per different usages.
 4-point scheme minimizes contact resistance during probing
21
Sensitivity Measurement Trend Chart

Brit
Briteclean products

Competitor’s products
Conclusion – Advantages of Brite Slurry Add
• Stabilize slurry and efficient CMP

• Distribute Slurry uniformity to polishing pad
• Improve WIW uniformity
Conclusion-Advantages of BriteClean
Briteclean mixture reduces particle counts
•

Efficient cleaning process

Much better surface roughness
•

Surface protection

 Much easier Process
• Mixture system
• No need change process
Conclusion – Advantages of Brite ACP
• Stabilize slurry and efficient CMP
• Protect oxidation on metal wafer
• Improve next layer of deposition
Thanks !

Questions on the Brizon Products?
Contact us @ Brizon.net
Backup
A Plethora of Materials
In Semiconductor Area
•
•
•
•
•
•
•
•

Oxide, such as Al2O3
Colloidal SiO2
NiFeCo
Cu, Al, W
Polymers
Ru
Si
Et al
Background of Briteclean
 Innovative Technology





Longer shelf life - over two years
Much easier control processes and environments
Much more efficient for the cleaning process
One process fit more applications

 One Process with Briteclean(s) Can Clean all
 Alumina
 NiFeCo, Cu abrasives
 CeO abrasives
 Colloidal SiO2
 Et al
Background of Briteclean Products
•

Hydrophobic-hydrophilic balance

•

Unique dispersion agents

•

Surface modified slurry

•

Monolayer of anti-oxidant

•

Anti-corrosive
Customer Testing Platform
BriteClean vs Competitor's
 Full NiFe, Cu and Alumina
 Particle Counts were measured by Tencor Surf scan
 Various Cleaning Tools were used
Including Mirra, SSEC, DNS
BriteClean-0

BriteClean-1

Clear Transparent Aqueous
Light Yellow Transparent Aqueous
pH=5.00±0.30
pH=8.40±0.30
Two Years Shelf life
pH Changes vs the Ratio of
BriteClean-0/BriteClean-1
8.5
8

7.85
7.5
7.2

7

pH

6.8
6.5

6.3
5.5
5

0

100%
BriteClean-1

10

20

30

40

50

60

70

Diluted 50 times in DI H2O

80

90

100

100%
BriteClean-0

Recommended Application: Briteclean-0/Briteclean-1 = 1:1
Diluted to 2%-5% times with DI H2O
Particle Count/Roughness vs Ration of BC-0/BC-1
Particle count

Roughness

2500

0.3
2258

1500
Particle

1000

500

Roughness(nm)

Particle count

2000

0.27

0.26

0.25
0.2
0.15

Roughness
0.13

0.1
0.05

114

107

0

0
0

10

20

30

40

50

60

70

BriteClean-1 100%

80

90

100

BriteClean-0 100%

Mixing ratio (Briteclean--0/1)%

On NiFe wafer

0

10

20

30

40

50

60

70

BriteClean-1 100%

80

90

100

BriteClean-0 100%

Mixing ratio (Briteclean--0/1)%

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Brizon Inc (USA): Leading CMP Solutions for Semiconductor Industry

  • 2. Products: • Microelectronic Application • • • CMP Slurry additive CMP cleaning Solutions Wafer Storage Buffer Solution • Smart Curable Products • Flexible Screen Application • LED Application • High Temperature Resistance • And low IR emission Application
  • 3. Products for the Semiconductor Industry: Brite-ACP : Slurry Additives to improve performance. • • • Stabilize Slurry and Improve CMP efficiency Reduce and/or Eliminate macro/micro scratches Improve Uniformity of material removal BriteClean-0 : CMP cleaning process BriteClean-1 : CMP cleaning process • • • • Improves post process surface cleanliness for particles and surface residuals. Improves next layer of deposition Protects both Metal and Oxide surfaces Improves wafer Rinsability
  • 4. Components • Non-ionic surfactants • Metal inhibitors • Anti-oxidant agents • Chelating agent • Particle removing agent
  • 5. Microelectronic application - CMP Briteclean - 0/Plus Briteclean - 1 Briteclean-ACP Pre/Post Cleaning Process YES YES YES Slurry Additives YES YES YES Storage/Buffer NO NO YES Need to mixing Need to mixing with BC-0/plus Solely 2% - 5% 2% - 5% 1% - 4% Application with BC-1 or BC-ACP Usage
  • 6. Examples of Application in Real Field FAB  Briteclean-0 and Briteclean-1 Mixed: Ratio 1:1 in 1.0% ~2% Aqueous media  Slurry applied: in MH837/MH834/MH814 (Cabot)  Pad applied: IC1000 (white pad --- Rodel/(Rom Haas) Sub IV (black pad --- Rodel (Rom Haas))  Tool platforms Applied: 8" Mirra (Applied Materials); 8" Ebara (Ebara); 8" 6DS-SP(Strausbaugh)  Wafer: Cu, Ni/Fe, Low key and Al2O3
  • 7. • Yield Improvement – Very dramatically • • • Improved within (WIW) wafer uniformity by ~1X Enhanced Cleanliness Improved Surface Roughness (NiFe<1nm) • No need Additional Process • Flexible condition • Environmental Friendly • No corrosive, no high or very pH
  • 8. Layer X CMP Comparison Layer X CMP Performance Comparison Wafer ID Existing Slurry 1 2 3 4 5 6 7 8 Mean Metal ALO Thickness Metal WIW Thickness Oxide WIW Added (FEI)-O Sigma-O (Nano)-O Sigma-O Paticles 261 7.3 267 10.2 217 257 8.1 261 8.2 198 265 2.4 273 3.6 229 263 8.3 268 9.4 363 251 6.1 261 7.5 107 278 5.9 283 6.9 267 255 6.9 267 8.1 271 263 7.2 267 7.8 400 Mean Std. Dev. 3 Sigma 261.63 7.60 22.79 6.53 1.75 5.24 268.38 6.61 19.84 7.71 1.84 5.52 256.50 86.85 260.55 278 251 27 8.3 2.4 5.9 283 261 22 10.2 3.6 6.6 400 107 293 Max. Min. Range Mean Metal Thickness (FEI)-O Wafer ID with Brite Additives 1 2 3 4 5 6 7 8 Mean Metal ALO Thickness Metal WIW Thickness Oxide WIW Added (FEI)-B Sigma-B (Nano)-B Sigma-B Paticles 263 3 249 2.7 30 251 4 267 2.1 0 265 4.2 253 3 139 256 2.9 263 1.9 271 258 3.1 262 2.4 0 261 3.3 262 2.9 225 260 4.1 261 2 57 266 2.8 265 2.5 68 Mean Std. Dev. 3 Sigma 260.00 4.64 13.91 3.43 0.54 1.63 260.25 5.72 17.15 2.44 0.39 1.16 98.75 96.27 288.82 266 251 15 4.2 2.8 1.4 267 249 18 3 1.9 1.1 271 0 271 Max. Min. Range Metal WIW Sigma-O Mean Metal Thickness (FEI)-B Metal WIW Sigma-B 9 285 280 8 275 7 270 6 265 5 260 4 255 3 250 245 2 240 1 235 0 1 2 3 4 5 6 ALO Thickness (Nano)-O 7 8 9 10 1 2 3 4 5 6 7 8 9 10 ALO Thickness (Nano)-B Oxide WIW Sigma-O 290 Oxide WIW Sigma-B 12 280 10 270 8 260 6 250 4 240 2 230 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
  • 9. Comparing SEM images of Silicon wafer surface Slurry only Slurry + Brizon products
  • 10. Principle of Slurry Additive for CMP Applications  Slurry distribution on polishing pads is a critical factor to achieve better WIW uniformity  Adding Brizon products into CMP slurries, the slurry surface extension with IC series CMP pads was modified to a form a uniformed slurry layer across the whole wafer Slurry Feed Wafer IC CMP Pad
  • 11. Surf-Clean Data For Competitor’s Clean Solution Pre-Treatment NiFe Alumina Post-Treatment
  • 12. Surf-Clean Data For Mixed BriteClean Solution Pre-Treatment NiFe Alumina Post-Treatment
  • 13. Different Slurry Cleanability of BriteClean vs Competitor’s BriteClean mixed Solution Con-1 Con-2 Alumina -70 -22 NiFe -66 -340 Competitor's Cleaning Solution Con-1 Con-2 Alumina 190 1571 Particle Counts NiFe 280 370
  • 14. Different Method Cleanability of BriteClean vs Competitor’s BriteClean mixed Solution Roller Pencil Alumina 10 -10 NiFe 24 -6 Competitor's Cleaning Solution Roller Pencil Alumina 318 190 Particle Counts NiFe 2985 280
  • 15. BriteClean Mixture Initial Cleaning Solution (Pre-) Post (PostCleaning Pre) Tool-1 259 268 9 Tool-2 692 640 -52 Tool-3 675 123 -552 Tool-4 207 78 -129 Competitor's Cleaning Solution Initial (Pre-) Tool-1 477 1445 968 Tool-2 891 3065 2174 Tool-3 133 528 395 Tool-4 500 845 345 Alumina NiFe Alumina NiFe Post (PostCleaning Pre)
  • 16. Principle of Cleaning Process for CMP Applications  Slurry Dissolved/Dispersed into Advanced Nonionic Surfactants, Slurry Chemistry  Trace Metals Dispersed into Advanced Nonionic Surfactants  Metal Ions Complex to Chelate in the Cleaning System  Aggressive Corrosive High/Low pH Buffered by the Cleaning Solution
  • 17. Post CMP&Cleaning AFM images (Cu plated wafer) BriteClean Mixture Competitor’s Cleaning Solution
  • 18. Post CMP&Cleaning AFM images (Cu plated wafer) BriteClean Mixture Average Roughness(N=3x3): Rms=0.29nm Competitor’s Cleaning Solution Average Roughness(N=3x3): Rms=0.34nm Roughness is better, surface residuals reduced.
  • 19. Wafer Storage Buffer Solution-ACP  One customer request an application  Store the wafer in DI water, but surface materials was etched, both metal and Oxide  Designed Brite-ACP, and currently is customer’s production  No etching on surface materials up to 6hours in DI water  No detailed data was provided by customer
  • 20. Principle of Prevention Processing  Mono-layer on Surface Prevents Redeposition of Any Contamination and Prevents Any Oxidation  Hydrophobic/Hydrophilic Balanced of the Mono-layer Improve Rinsability
  • 21. Sensor Circuit Measurement  Sensor dimension was designed per different usages.  4-point scheme minimizes contact resistance during probing 21
  • 22. Sensitivity Measurement Trend Chart Brit Briteclean products Competitor’s products
  • 23. Conclusion – Advantages of Brite Slurry Add • Stabilize slurry and efficient CMP • Distribute Slurry uniformity to polishing pad • Improve WIW uniformity
  • 24. Conclusion-Advantages of BriteClean Briteclean mixture reduces particle counts • Efficient cleaning process Much better surface roughness • Surface protection  Much easier Process • Mixture system • No need change process
  • 25. Conclusion – Advantages of Brite ACP • Stabilize slurry and efficient CMP • Protect oxidation on metal wafer • Improve next layer of deposition
  • 26. Thanks ! Questions on the Brizon Products? Contact us @ Brizon.net
  • 28. A Plethora of Materials In Semiconductor Area • • • • • • • • Oxide, such as Al2O3 Colloidal SiO2 NiFeCo Cu, Al, W Polymers Ru Si Et al
  • 29. Background of Briteclean  Innovative Technology     Longer shelf life - over two years Much easier control processes and environments Much more efficient for the cleaning process One process fit more applications  One Process with Briteclean(s) Can Clean all  Alumina  NiFeCo, Cu abrasives  CeO abrasives  Colloidal SiO2  Et al
  • 30. Background of Briteclean Products • Hydrophobic-hydrophilic balance • Unique dispersion agents • Surface modified slurry • Monolayer of anti-oxidant • Anti-corrosive
  • 31. Customer Testing Platform BriteClean vs Competitor's  Full NiFe, Cu and Alumina  Particle Counts were measured by Tencor Surf scan  Various Cleaning Tools were used Including Mirra, SSEC, DNS
  • 32. BriteClean-0 BriteClean-1 Clear Transparent Aqueous Light Yellow Transparent Aqueous pH=5.00±0.30 pH=8.40±0.30 Two Years Shelf life
  • 33. pH Changes vs the Ratio of BriteClean-0/BriteClean-1 8.5 8 7.85 7.5 7.2 7 pH 6.8 6.5 6.3 5.5 5 0 100% BriteClean-1 10 20 30 40 50 60 70 Diluted 50 times in DI H2O 80 90 100 100% BriteClean-0 Recommended Application: Briteclean-0/Briteclean-1 = 1:1 Diluted to 2%-5% times with DI H2O
  • 34. Particle Count/Roughness vs Ration of BC-0/BC-1 Particle count Roughness 2500 0.3 2258 1500 Particle 1000 500 Roughness(nm) Particle count 2000 0.27 0.26 0.25 0.2 0.15 Roughness 0.13 0.1 0.05 114 107 0 0 0 10 20 30 40 50 60 70 BriteClean-1 100% 80 90 100 BriteClean-0 100% Mixing ratio (Briteclean--0/1)% On NiFe wafer 0 10 20 30 40 50 60 70 BriteClean-1 100% 80 90 100 BriteClean-0 100% Mixing ratio (Briteclean--0/1)%