1. 30/04/13 08h42PVSYST V5.60
HANENERGY 60W US PAN FILE DATASHEET
Characteristics of a PV module
Manufacturer, model : Hanergy, HNS-ST60(US)
Data source : Manufacturer
File : Hanergy HNS-ST60-US.PAN of 30/04/13 07h57
STC power (manufacturer) Pnom 60 Wp Technology a-Si:H tripple
Module size (W x L) 0.635 x 1.245 m² Rough module area 0.79 m²Amodule
Number of cells 1 x 39 Sensitive area (cells) Acells 0.74 m²
Specifications for the model (manufacturer or measurement data)
Reference temperature TRef 45 °C Reference irradiance GRef 800 W/m²
Open circuit voltage Voc 81.9 V Short-circuit current Isc 0.86 A
Max. power point voltage Vmpp 64.0 V Max. power point current Impp 0.71 A
=> maximum power Pmpp 45.4 W Isc temperature coefficient muIsc 0.6 mA/°C
One-diode model parameters
Shunt resistance Rshunt 1300 ohm Diode saturation current IoRef 15 nA
Serie resistance Rserie 4.45 ohm Voc temp. coefficient MuVoc -301 mV/°C
Diode quality factor Gamma 4.36
Specified Pmax temper. coeff. muPMaxR -0.28 %/°C Diode factor temper. coeff. muGamma 0.000 1/°C
Special parameter for amorphous modules
Rshunt exponential Rsh(G=0) 6000 ohm Exponential parameter Rsh exp 5.5
Recombination parameter di² / mu tau 4.97 1/V Spectral correction enabled Yes
Reverse Bias Parameters, for use in behaviour of PV arrays under partial shadings or mismatch
Reverse characteristics (dark) BRev 3.20 mA/V² (quadratic factor (per cell))
Number of by-pass diodes per module 1 Direct voltage of by-pass diodes -0.7 V
Model results for standard conditions (STC: T=25°C, G=1000 W/m², AM=1.5)
Max. power point voltage Vmpp 0.0 V Max. power point current Impp 0.00 A
Maximum power Pmpp 0.0 Wc Power temper. coefficient muPmpp 0.00 %/°C
Efficiency(/ Module area) Eff_mod 0.0 % Fill factor FF 0.000
Efficiency(/ Cells area) Eff_cells 0.0 %
Voltage [V]
Current[A]
PV module: Hanergy, HNS-ST60(US)
0.0 W Incident Irrad. = 1000 W/m²
Cells temp. = 25 °C
0.0 W Incident Irrad. = 800 W/m²0.0 W Incident Irrad. = 600 W/m²0.0 W Incident Irrad. = 400 W/m²0.0 W Incident Irrad. = 200 W/m²