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Device Modeling Report



COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: 1SS271
MANUFACTURER: TOSHIBA




                Bee Technologies Inc.



   All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                 Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




          All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit

                 R1


                     0.01m
   0Vdc   V1




                             U1 1SS271




                     0




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)           Vfwd(V)
            Ifwd(A)                                                 %Error
                            Measurement        Simulation
              1.00E-05             0.230             0.230                    -0.22
              2.00E-05             0.247             0.248                     0.40
              5.00E-05             0.270             0.272                     0.56
                0.0001             0.288             0.290                     0.56
                0.0002             0.310             0.308                    -0.61
                0.0005             0.333             0.334                     0.21
                 0.001             0.355             0.355                    -0.06
                 0.002             0.380             0.379                    -0.24
                 0.005             0.420             0.422                     0.40
                   0.01            0.475             0.471                    -0.80
                   0.03            0.625             0.626                     0.16




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit

                      V2


                           0Vdc

   V1 = 0       V1
   V2 = 6
   TD = 0
   TR = 10ns
   TF = 50ns
   PW = 50us
   PER = 10us         U1 1SS271



                            0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                                Cj(pF)           Cj(pF)
             Vrev(V)                                               %Error
                             Measurement       Simulation
                       0.1           7.90              7.92               0.22
                       0.2           7.60              7.57              -0.36
                       0.5           6.90              6.86              -0.61
                         1           6.08              6.16               1.32
                         2           5.35              5.43               1.44
                         5           4.56              4.47              -1.91




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

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SPICE MODEL of 1SS271 (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ SCHOOTTKY RECTIFIER / STANDARD PART NUMBER: 1SS271 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit R1 0.01m 0Vdc V1 U1 1SS271 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 1.00E-05 0.230 0.230 -0.22 2.00E-05 0.247 0.248 0.40 5.00E-05 0.270 0.272 0.56 0.0001 0.288 0.290 0.56 0.0002 0.310 0.308 -0.61 0.0005 0.333 0.334 0.21 0.001 0.355 0.355 -0.06 0.002 0.380 0.379 -0.24 0.005 0.420 0.422 0.40 0.01 0.475 0.471 -0.80 0.03 0.625 0.626 0.16 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5. Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit V2 0Vdc V1 = 0 V1 V2 = 6 TD = 0 TR = 10ns TF = 50ns PW = 50us PER = 10us U1 1SS271 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0.1 7.90 7.92 0.22 0.2 7.60 7.57 -0.36 0.5 6.90 6.86 -0.61 1 6.08 6.16 1.32 2 5.35 5.43 1.44 5 4.56 4.47 -1.91 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004