The simulation results and the measurement results from a hydrogen plasma in an organic low-K etching reactor are compared.
Experimental conditions:
- Pressure 5 [Pa] (Fixed at outlet)
- Power electrode Vrf=200 [V] ; frequency 60[MHz]
- Vdc: Automatically calculated
- Flow rate 200[sccm]
- Species to be considered H2, H, e-, H+, H2+, H3+, H-
- Reactions on the wall
H -> 1/2 H2 (Metal surface 15% Insulator surface 7%)
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Plasma Enhanced materials processing and
rarefied GAS dynamics Unified Simulation tools
P E G A S U S
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CCP
Hydrogen plasma simulation
Modules : PIC-MCCM
NMEM
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Purpose
The simulation result and the measurement result in Prof. Hori Lab.
of Nagoya University of the hydrogen plasma in a organic low-K
etching reactor are compared.
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Computational model
V(t)=Vdc + Vrf*sin(2πf t)
Metal
(Ground)
Insulator εr=4.5
Insulator εr=4.5
Outlet
5Pa
~
H2 inlet
Power electrode
Axial
symmetry
30mm
R 167mm
Wall
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Computational conditions
・Pressure 5 [Pa] (Fixed at outlet)
・Power electrode Vrf=200 [V] ; frequency 60[MHz]
・Vdc: Automatically calculated
・Flow rate 200[sccm]
・Species to be considered
H2, H, e-, H+, H2
+, H3
+, H-
・Reactions on the wall
H 1/2H2 (Metal surface 15% Insulator surface 7%)
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Number density
(electron, ions, Hydrogen atom)
e- density[/m3] H+
density[/m3] H2
+
density[/m3]
H3
+
density[/m3] H-
density[/m3] H density[/m3]
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Electron temperature, Electric potential,
Gas pressure, Flow velocity, and H flux
e- temperature[eV] electric potential[V] gas pressure [Pa]
gas velocity [m/sec] H flux [/m2
/sec]
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Simulation result compared with experiment
quantity Simulation(*) experiment
Electron density [/cm3] 1.44E10 1.6E10
H+ density [/cm3] 3.43E8 -
H2
+ density [/cm3] 3.45E9 -
H3
+ density [/cm3] 1.07E10 -
H- density [/cm3] 1.29E7 -
H density [/cm3] 1.13E13 2.0E13
Electron temperature [eV] 5.17 6.8
Vdc [V] -112 -114
(*)These are mean values over radial direction at the center
of electrodes.