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1
NANOMATERIALS
s
2
 Introduction, Terminology & History
 Optical Properties and its
Characterization
 Interaction of light with matter
 Surface plasma resonance,
 Characterization methods: Electron
microscopy, SEM, TEM.
 Top-down, Bottom-up fabrication
(Colloidal route, sol-gel method,
chemical reduction method,
electrochemical method)
3
Introduction
4
5
6
7
Year Scientist name &
Information
Invention
1959 Richard Feyman (Nobel) -There is plenty of room at the
bottom
-NPs have tremendous
applications & diff. properties.
1981 Binning & Rohrer
(Nobel 1986)
Scanning Tunneling Microscope
(STM)
Atomic size images
1990 Don Eigler & Erhard
Shucizer
Atomic manipulation is possible
(Milestone advancement of science)
1985 Curl, Kroto & Smalley
(Nobel 1996)
Fullerene NP (C60)
1991 Iijima Carbon nanotubes
2004 Gem & Nevoselve
(Nobel 2010)
Graphene (Allotope of ‘C’)
All properties of NPs are differing than its bulk materials. (Mechanical, thermal,
optical, magnetic, etc.)
Very Smaller size and larger surface area changes properties
e.g. Graphene good conductor of electricity, thin , strong, transparent, elastic
8
Optical Properties of Nanomaterials
Interaction of light with matter
Various changes in properties of matter when
exposed to EMR.
1. Optical properties of Semiconducting NPs
Conductor: VB & CB overlaps.
Insulator: VB & CB separated by large distance.
Semi-conductor: VB & CB separated by finite distance.
CB
VB
Excitonic level
hole
e
-
E
g
Exciton: When e- passes from VB to CB, a
hole is left behind and e- hole pair formed
in the particle called exciton.
i.e. bound state of an e- & hole
- this binding is due to electrostatic
attraction
- Exciton has lower energy than unbound
9
Two types of Exciton
a) Frankel Exciton: Distance between e- & hole is comparable
to lattice constant.
(Lattice constant: A parameter measures length or angle
of the unit cell of a crystal lattice, which defines size &
shape of it.)
hole e-
Eg is energy necessary to create free hole and
10
There are two types of excitons
Wannier-Mott excitons
Frankel exciton
11
The Hamiltonian for Mott-Wannier exciton is
given as,
(Hamiltonian: Sum of K.E & P.E. of particles)
Ĥ = (Pe2/2me) + (Ph2/2 mh) – (e2 /є ǀre-rhǀ) ----------
[1]
K.E.of e- K.E.of hole Coulomb ener. of e- &
hole attraction
Where,
me & mh = Effective mass of e- & hole
Pe & Ph = Momentum (p=mv) of e- & hole
respt.
Є = dielectric const. of semiconductor
rB = Bohr’s radius of exciton
h = Planck’s const (= energy of quantum of
EMR/freq).
(6.626 * 10-34 m2 Kg/s)
e = Charge
є = Dielectric const. of medium
(Ability of sub. to store electrical energy) or
(Permitivity of sub./ Permitivity of free space)
Permitivity: Measure of resistance when electrical
field forms in medium
12
Then, Bohr’s radius of exciton
is,
rB = h2 є /e2 [1/me-1/mh]-------------[2]
13
Wave Function: A function satisfies wave equation &
describes properties of wave.(describes position &
state of an e-)
Wave Equation: Differential eqn expressing the
properties of motion in waves
14
Using eqn[1] & considering certain wave functions
& potentials, exciton energy (ΔE) or effective band
gap (Eg) of particle having radius (R) can be given
by eqn.
ΔE = Eg
eff. = h2π2/ 2R2 [1/me+ 1/mh]-(1.8 e2/4 π є0 є R) + P.E. -
---[3]
ΔE = Eg
eff. = Effective band gap of particles of
radius (Exciton energy)
R = Radius of cluster in which exciton can
be created
є0 = dielectric const. of free space.(State of
motion in which an e- found anywhere in
Localization energy
of e- & hole
Polarization
of crystal
(neglected)
Coulomb energy
betn e- & hole
15
From eqn [3]; as particle size (R)
decreases, first term becomes dominates
& ΔE increases.
i.e. energy gap in semiconductor is a
characteristics of the material
hence, here as energy gap increases in
semiconductor material with decreasing
particle size, is given by,
Total energy gap (ΔE) =hυ = Eg (bulk) –
Eexciton This can be shown in eqn [3
CB
VB
ΔE (Small)
Eexciton
E
g
16
Particle Size
(nm)
2 5 10 20
Energy gap
(ΔE)
2.78 1.61 1.46 1.42
Eg. In case of GaAs semiconductor
17
Characterization of semiconductor
nanoparticle
Eg
Eg
Eg
Semiconductor particle
If proton have sufficient
energy to excite e- , then only
it is absorbed
i.e. Particle size decreases, Eg
increases, absorption
wavelength decreases (freq.
increases)
e.g. Absorption spectra of
PbSe nanoparticles for diff.
Absorbance
Wavelength [nm]
1000 1500 2000 2500
9 nm
5.5 nm
4.5 nm
3 nm
Blue shift
Sing size
As particle size increases absorption shifts to longer wavelength,
hence shows diff. colour
18
Optical properties of metallic NPs
When light is incident on metallic NP
solution, it may be absorbed,
transmitted or scattered.
According to Mie theory phenomenon can be
explained as,
When an EMR is incident on spherical particle of
uniform size which distributed uniformly in medium,
then a part of light may be absorbed, a part may be
transmitted & scattered.
It is observed that, when light is incident on solution of NP,
decrease of intensity takeplace, due to extinction of light.
Therefore, amount of light extinguished is given by,
[Qext = Cext/πR2]
Where, Qext = extinction coefficient (how strongly sub.
absorbs light)
Cext = Cross section of particle (Probability that two
particle colloid & react in certain way.)
19
Incident Light [I0]
Scattered Light
Transmitted Light [I]
Absorbed
If I0 is intensity of radiation of wavelength λ, passing thro’
medium having dielectric constant єm and thickness ‘X’,
Then intensity of transmitted light is
I = I0 * e-μX --------------[1]
μ = Extinction coefficient = (N/V). Cext
Cext = Cross section of particle
N = No. of particle in medium
V = Volume of colloidal particle
20
According to Mie theory,
Cext = Cobs + Cscatt.
є1 & є2 = Real & imaginary parts of complex
dielectric functions
i.e є = є1+iє2 of the constituent material of NP.
Real: Polarization & anomalous dispersion of particle
Imaginary: Dissipation of energy into medium by
which energy becomes not available
єm = dielectric const. of surrounding medium(real
number)
(for air єm =1 & blood єm =1.4)
In Mie Theory,
Cext = [24 π2R2 єm
3/2/ λ] * [є2/(є1+ 2єm)2
+ є2
2]----[2]
21
22
Surface Plasma
resonance
23
AuNPs are very strong absorbers of visible light
because of high resonance condition is achieved.
SPR: When light incident on the surface of
particle, e- cloud of NPs oscillate due to
electric field of light. This condition of
resonance known as SPR.
Or
When NPs is much smaller than wavelength
of light, oscillations induced in conduction
band e- by interaction with EMR.
e- of particle
Oscillations about Au atom.
SPR in AuNPs.
24
Light resonance with the surface Plasmon oscillation
causes the free electrons in the metal to oscillate.
25
26
Extinction of particle depends on optical
properties of material & medium in which it
is distributed.
As per eqn [2]in Mie Theory & above
discussion, we can say that
For larger NP, the wavelength of SPR peak is
size dependant.
Now,
Qext (Extinction coefficient) =
Cext/πR2
By putting value of Cext, we
have
Qext = [24 π2R3 єm
3/2/ λ πR2] * [є2/(є1+ 2єm)2
+
є2
2]
= [24 πR єm
3/2/ λ ] * [є2/(є1+ 2єm)2
+ є2
2]
i.e Qext depends upon R & dielectric
const. medium.
27
Relative amount of extinction & absorption depends
on the particle size.
In Small NPs: Extinction due to absorption
In large NPs: Extinction due to absorption &
scattering.
Freq. of SPR oscillation is given by,
Wp = √4π Ne
2 / m*
N = No. of e- in plasma
e = Charge on e-
m* = effective mass of e-
28
It is observed that wavelength for
resonance of pure Au NP remains in visible
region.
- We also know that this wavelength
decides wavelength of scattered or
absorbed light which is dependent on
particle size of material.
- Again we know that wavelength of
scattered light decides color of solution
- Hence gold solution shows different color
depending upon size.
Characterization Methods
29
To know about size, structure, types of atoms,
arrangement of atoms, etc. of NPs
Sr.
No.
Techniques Use
1 XRD, e- diffraction, neutron
diffraction
Particle Size & type of
crystal structure.
2 UV, IR, FTIR, ESR, AAS,
NMR,etc.
Information about
electronic structure,
chemical state analysis
& other properties.
3 Optical Microscope,SEM,
TEM, STM,
Atomic force Microscope
Morphology, Size,
Structure, image of
atomic level, etc.
30
Electron
Microscopy
31
Interaction of e- with solid is
complicated due to i) charge on e- ii)
Interaction of e- with ions in solids.
Due to
interaction
of e- with
sample, a
tear
shaped
volume of
interaction
is formed.
When e- interacted with surface
of solid material, many
phenomenon takes place such as
scattering of e-, production of 2°
e- , Production of X-ray etc.
2° e-
e- beam
Back scattered e-
X-ray
Sample bottom
Sample top
±2 um
e- beam should
focused on
sample without
getting scattered
or deflected by
air, therefore e-
microscopy
requires
vaccum.
Specimen-Beam
Interaction
X-ray
Unscattere
d electrons
Elastically
scattered
electrons
Elastically
scattered
electrons
Incident
electron
beam
Light
Secondary
electrons
Backscattere
d electrons
Absorbed
electrons
Specimen
Auger
electro
n
33
German
Scientist Ernst
Ruska(1933),
Nobel prize in
physics
(1986)
Electron gun generate
electron and accelerated
them to an energy level
(0.1- 30keV)
Electron lenses focuses
the beam to smaller spot
size to produce sharp
34
35
Construction &
Working
36
37
 Appropriate size to fit specimen chamber
 Sample should be dry
 Hard dry materials eg. Wood, feather, dried insects
can be examined with little further treatment.
 For living cells, tissues & soft bodied organisms
require chemical fixation to preserve & stabilize
their strcture.
 Dry specimen is mounted on specimen tube using
adhesive.
Sample
Preparation
 Amplification:
e- amplifiers of various types used to amplify signals
 Detectors:
Back scattered e-s & 2° e-s can be detected by specialized
detectors.
Resulting image will be distribution map of intensity of signal
emitted from scanned scanned area of specimen.
In older microscopes image was captured.
38
Affecting factors
Applications: Morphology & distribution of
NPs
Precautions:
Placed whole system in vaccum (To avoid
oxidation & contamination & to prohibit
39
 Non conducting material requires coating
of thin metal film (Au/pt) [< 10nm]& it
becomes conducting
(Insulating material get charged due to
incident e-s & images may become faulty &
blurred.)
Advantag
es
 First method to obtain image of tiny
particles.
 Biological samples can be analyzed with
little treatment.
 Non-destructive method.
Disadvanta
ges
40
Transmission Electron
Microscopy (TEM)
Principle: Transmitted e- hit
fluorescent screen gives shadow
image.
 Sample should be very thin
 Sample is powdered & made
thin film
 Energy of e- should very high
(greater than 50000 ev)
41
Sr.
No
.
SEM TEM
1 e- beam scans over
surface of sample
e- beam passes thro’ thin
film
2 Sample can be of any
thickness & mounted on
stub
Thin sample supported
on grid
3 Specimen stage is at
bottom
Specimen stage is at
halfway down
4 Image is of surface of
sample
Image is two dimensional
projection of sample
5 Image shown on TV
monitor
Image shown on
fluorescent screen
Diff. between SEM
&TEM
42
Top-Down, Bottom-up
Fabrication
Top-Down: Larger
Smaller
High mfg. capability,
low spatial resolution
Bottom up: Molecule
or atom come together
in proper way to form
required nanostructure.
High spatial resolution,
limited mfg. capability
But, now combination
of both is most famous
43
Methods of Synthesis
of NPs
A) Colloidal Route:(10-9 to 10-6 m)
To synthesize metal NPs Reduction of metal
salt by proper reducing agent
eg. HAucl4 + Na3C6H5O7 Au+ + C6H5O7
- + HCl +3NaCl
[Chloroauric [Trisod. Citrate]
Acid]
44
Process for synthesis of
AuNPs
Au+ +
e- Nucleati
on
A
u
Condensati
on
Surface
reduction
C6H5O7
-
C
6
H
5
O
7
-
C
6
H
5
O
7
-
C
6
H
5
O
7
-
Electrostatic
45
e.g. ZnS NPs
•ZnCl2 or Zn(NO3)2 or ZnSO4 dissolved in aq. or non-aq.
Solvents
•Added Na2S or H2S gas passed
•ZnS particles formed
i.e.
ZnCl2 + Na2S -----------> ZnS + 2NaCl
ZnCl2 + 2NaOH -----------> Zn(OH)2 + 2 NaCl
Zn(OH)2 -----------> ZnO + H2O
Semiconductor NPs by Colloidal route
46
Chemical
Capping
 Capping used in synthesis of NPs.
 Some chemicals are used in colloidal
synthesis to inhibit NP overgrowth &
aggregation & to control structural
characteristics.
 Thro’ colloidal route NPs also obtained by
drying off the liquid.
 Spin coating or dipping coating also used to
obtain thin film of capped particles.
 Coating should be stable & non interactive
with the particle except at surface.
Disadvantages: Chemicals used for capping may be
toxic & difficult to handle.
47
Used
to
prepar
e
silica
gel
Perfor
med in
liquid
phase
Sol: Type of colloid, in which dispersed
solid phase mixed in homogeneous liquid
mediun.
Process: Formation of colloidal suspension
(sol) & gelation of sol (gel) to form network
in liquid phase
 Useful for self-assembly process for
fabrication of NPs & three dimensional
materials as aerogels
48
Four Steps of synthesis of
Silica-gel
1) Hydrolysis reaction: -OR group substituted
by –OH group
Occur without catalyst
If catalyst used increases rate of reaction
Catalyst: NaOH, NH3, HF, CH3COOH, etc.
≡Si-OEt + H2O ------------> ≡Si-OH +
EtOH
49
3) Polymerization: Step growth of particle
takesplace
 Growth depends upon PH, tempt, etc.
 Complex reaction
Si(OEt)2 ------------> -SiO2-
4) Agglomeration: Network particles start to
form thro’ liquid medium due to which gel is
formed.
All 4 steps are affected by PH, tempt., time
of reaction, catalyst.
Application: Inorganic coating, Reactive
oxides, Ceramic materials, Ceramic coating,
Glasses, Mfg. of silica gel catalyst, Special
types of alumino-silicates gels (e.g. Imgolite:
50
Sol-Gel process overview
HCl
Soln of Metals+ Alkoxysilanes
Alkoxides+Alcohol
/Alcogel
O2/500°C
Supercritical drying
Colloid
51
Chemical reduction
Method
 Metal salt solution treated with suitable
reducing agent.
 Added appropriate stabilizing agent.
 Further treatmentDried & get NPs. Eg. AgNPs
Ag NO3 Soln + Hydrazine hydrate + Sod. Doacyl sulfate & Sod. Citrate (stabilizing agent)
Pale yellow or Pale red colour (due to formn
of AgNPs)
Purified by centrifugation
AgNPs washed with deionized water under N2 gas to
remove excess Ag ions
Dried powder of nanosize silver can be
obtained by freeze drying
Particle size 15 to
48 nm
52
Electrochemical
method
 Process of using electric current to coat on
electrically conductive object with thin layer of
metal.
As a result of electrical current, electrolysis
of electrolytic solution occurs & deposition
of metal in the form NP takesplace on
cathode, so called as electrodepositon.
 As result of reduction reaction metal ions in a
solution deposits on negatively charged
cathode metal atoms.
e.g. Ag, Cu, Au Nps can be
synthesized.
53
Anode
Metal ions
Cathode
(Substrate)
Electrolyte
Nanocrystalline
deposit
 e.g. preparation of AgNP
Advantages:
 Cheap & fast Method.
 Thickness of layer depends on current density &
time of current flow.
 The deposit can be detached by suitable method
 Recent Mostly used process by many researchers.
54
Electronics: NPs of ZnSe, ZnS, CdS
improves resolution of TV screen. So
used in HD TV & computer monitors.
Energy (Fuel cells): NM as catalyst to
produce hydrogen ions from fuel.
High Storage capacity batteries:
Aerogel & Ni-MH
Industry: Tougher & harder cutting tools.
e.g. WC, TaC, TiC NPs, etc.
Automobile with greater efficiency:
Applications of NMs
55
Health Care:
-Heart valves from ZrO ceramics, SiC (low wt.,
extreme hardness, high strength, corrosion
resistance, etc.)
-NM used in cancer therapy, drug release, etc.
Food- Agriculture: Food packaging, food
processing catalyst, food quality analysis
sensor, etc.
Textile: NM used to produce medical textile,
technical textile, antistain textile, self-
cleaning textile, etc.
Environment: Pollution scavengers,
pollution monitoring sensors,etc.
56
Domestic Appliances: NMs used in various domestic
appliances such as air purifiers, air conditioners, water
purifiers, refrigerators, window material, etc.
High sensitive sensors: NM of ZrO is used in CO
sensor. NM also used in smoke detectors, ice
detectors on aircraft wings, automobile engine
performance sensors.
NM used in aerospace components, longer lasting
satellites, self-cleaning glasses,etc.
Future Applications: Quantum computers,
microelectro-mechanical systems, optoelctronic
devices, environmental devices, nano-electronic &
57
58

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6. Nanomaterials

  • 2. s 2  Introduction, Terminology & History  Optical Properties and its Characterization  Interaction of light with matter  Surface plasma resonance,  Characterization methods: Electron microscopy, SEM, TEM.  Top-down, Bottom-up fabrication (Colloidal route, sol-gel method, chemical reduction method, electrochemical method)
  • 4. 4
  • 5. 5
  • 6. 6
  • 7. 7 Year Scientist name & Information Invention 1959 Richard Feyman (Nobel) -There is plenty of room at the bottom -NPs have tremendous applications & diff. properties. 1981 Binning & Rohrer (Nobel 1986) Scanning Tunneling Microscope (STM) Atomic size images 1990 Don Eigler & Erhard Shucizer Atomic manipulation is possible (Milestone advancement of science) 1985 Curl, Kroto & Smalley (Nobel 1996) Fullerene NP (C60) 1991 Iijima Carbon nanotubes 2004 Gem & Nevoselve (Nobel 2010) Graphene (Allotope of ‘C’) All properties of NPs are differing than its bulk materials. (Mechanical, thermal, optical, magnetic, etc.) Very Smaller size and larger surface area changes properties e.g. Graphene good conductor of electricity, thin , strong, transparent, elastic
  • 8. 8 Optical Properties of Nanomaterials Interaction of light with matter Various changes in properties of matter when exposed to EMR. 1. Optical properties of Semiconducting NPs Conductor: VB & CB overlaps. Insulator: VB & CB separated by large distance. Semi-conductor: VB & CB separated by finite distance. CB VB Excitonic level hole e - E g Exciton: When e- passes from VB to CB, a hole is left behind and e- hole pair formed in the particle called exciton. i.e. bound state of an e- & hole - this binding is due to electrostatic attraction - Exciton has lower energy than unbound
  • 9. 9 Two types of Exciton a) Frankel Exciton: Distance between e- & hole is comparable to lattice constant. (Lattice constant: A parameter measures length or angle of the unit cell of a crystal lattice, which defines size & shape of it.) hole e- Eg is energy necessary to create free hole and
  • 10. 10 There are two types of excitons Wannier-Mott excitons Frankel exciton
  • 11. 11 The Hamiltonian for Mott-Wannier exciton is given as, (Hamiltonian: Sum of K.E & P.E. of particles) Ĥ = (Pe2/2me) + (Ph2/2 mh) – (e2 /є ǀre-rhǀ) ---------- [1] K.E.of e- K.E.of hole Coulomb ener. of e- & hole attraction Where, me & mh = Effective mass of e- & hole Pe & Ph = Momentum (p=mv) of e- & hole respt. Є = dielectric const. of semiconductor
  • 12. rB = Bohr’s radius of exciton h = Planck’s const (= energy of quantum of EMR/freq). (6.626 * 10-34 m2 Kg/s) e = Charge є = Dielectric const. of medium (Ability of sub. to store electrical energy) or (Permitivity of sub./ Permitivity of free space) Permitivity: Measure of resistance when electrical field forms in medium 12 Then, Bohr’s radius of exciton is, rB = h2 є /e2 [1/me-1/mh]-------------[2]
  • 13. 13 Wave Function: A function satisfies wave equation & describes properties of wave.(describes position & state of an e-) Wave Equation: Differential eqn expressing the properties of motion in waves
  • 14. 14 Using eqn[1] & considering certain wave functions & potentials, exciton energy (ΔE) or effective band gap (Eg) of particle having radius (R) can be given by eqn. ΔE = Eg eff. = h2π2/ 2R2 [1/me+ 1/mh]-(1.8 e2/4 π є0 є R) + P.E. - ---[3] ΔE = Eg eff. = Effective band gap of particles of radius (Exciton energy) R = Radius of cluster in which exciton can be created є0 = dielectric const. of free space.(State of motion in which an e- found anywhere in Localization energy of e- & hole Polarization of crystal (neglected) Coulomb energy betn e- & hole
  • 15. 15 From eqn [3]; as particle size (R) decreases, first term becomes dominates & ΔE increases. i.e. energy gap in semiconductor is a characteristics of the material hence, here as energy gap increases in semiconductor material with decreasing particle size, is given by, Total energy gap (ΔE) =hυ = Eg (bulk) – Eexciton This can be shown in eqn [3 CB VB ΔE (Small) Eexciton E g
  • 16. 16 Particle Size (nm) 2 5 10 20 Energy gap (ΔE) 2.78 1.61 1.46 1.42 Eg. In case of GaAs semiconductor
  • 17. 17 Characterization of semiconductor nanoparticle Eg Eg Eg Semiconductor particle If proton have sufficient energy to excite e- , then only it is absorbed i.e. Particle size decreases, Eg increases, absorption wavelength decreases (freq. increases) e.g. Absorption spectra of PbSe nanoparticles for diff. Absorbance Wavelength [nm] 1000 1500 2000 2500 9 nm 5.5 nm 4.5 nm 3 nm Blue shift Sing size As particle size increases absorption shifts to longer wavelength, hence shows diff. colour
  • 18. 18 Optical properties of metallic NPs When light is incident on metallic NP solution, it may be absorbed, transmitted or scattered. According to Mie theory phenomenon can be explained as, When an EMR is incident on spherical particle of uniform size which distributed uniformly in medium, then a part of light may be absorbed, a part may be transmitted & scattered. It is observed that, when light is incident on solution of NP, decrease of intensity takeplace, due to extinction of light. Therefore, amount of light extinguished is given by, [Qext = Cext/πR2] Where, Qext = extinction coefficient (how strongly sub. absorbs light) Cext = Cross section of particle (Probability that two particle colloid & react in certain way.)
  • 19. 19 Incident Light [I0] Scattered Light Transmitted Light [I] Absorbed If I0 is intensity of radiation of wavelength λ, passing thro’ medium having dielectric constant єm and thickness ‘X’, Then intensity of transmitted light is I = I0 * e-μX --------------[1] μ = Extinction coefficient = (N/V). Cext Cext = Cross section of particle N = No. of particle in medium V = Volume of colloidal particle
  • 20. 20 According to Mie theory, Cext = Cobs + Cscatt. є1 & є2 = Real & imaginary parts of complex dielectric functions i.e є = є1+iє2 of the constituent material of NP. Real: Polarization & anomalous dispersion of particle Imaginary: Dissipation of energy into medium by which energy becomes not available єm = dielectric const. of surrounding medium(real number) (for air єm =1 & blood єm =1.4) In Mie Theory, Cext = [24 π2R2 єm 3/2/ λ] * [є2/(є1+ 2єm)2 + є2 2]----[2]
  • 21. 21
  • 23. 23 AuNPs are very strong absorbers of visible light because of high resonance condition is achieved. SPR: When light incident on the surface of particle, e- cloud of NPs oscillate due to electric field of light. This condition of resonance known as SPR. Or When NPs is much smaller than wavelength of light, oscillations induced in conduction band e- by interaction with EMR. e- of particle Oscillations about Au atom. SPR in AuNPs.
  • 24. 24 Light resonance with the surface Plasmon oscillation causes the free electrons in the metal to oscillate.
  • 25. 25
  • 26. 26 Extinction of particle depends on optical properties of material & medium in which it is distributed. As per eqn [2]in Mie Theory & above discussion, we can say that For larger NP, the wavelength of SPR peak is size dependant. Now, Qext (Extinction coefficient) = Cext/πR2 By putting value of Cext, we have Qext = [24 π2R3 єm 3/2/ λ πR2] * [є2/(є1+ 2єm)2 + є2 2] = [24 πR єm 3/2/ λ ] * [є2/(є1+ 2єm)2 + є2 2] i.e Qext depends upon R & dielectric const. medium.
  • 27. 27 Relative amount of extinction & absorption depends on the particle size. In Small NPs: Extinction due to absorption In large NPs: Extinction due to absorption & scattering. Freq. of SPR oscillation is given by, Wp = √4π Ne 2 / m* N = No. of e- in plasma e = Charge on e- m* = effective mass of e-
  • 28. 28 It is observed that wavelength for resonance of pure Au NP remains in visible region. - We also know that this wavelength decides wavelength of scattered or absorbed light which is dependent on particle size of material. - Again we know that wavelength of scattered light decides color of solution - Hence gold solution shows different color depending upon size.
  • 29. Characterization Methods 29 To know about size, structure, types of atoms, arrangement of atoms, etc. of NPs Sr. No. Techniques Use 1 XRD, e- diffraction, neutron diffraction Particle Size & type of crystal structure. 2 UV, IR, FTIR, ESR, AAS, NMR,etc. Information about electronic structure, chemical state analysis & other properties. 3 Optical Microscope,SEM, TEM, STM, Atomic force Microscope Morphology, Size, Structure, image of atomic level, etc.
  • 31. 31 Interaction of e- with solid is complicated due to i) charge on e- ii) Interaction of e- with ions in solids. Due to interaction of e- with sample, a tear shaped volume of interaction is formed. When e- interacted with surface of solid material, many phenomenon takes place such as scattering of e-, production of 2° e- , Production of X-ray etc. 2° e- e- beam Back scattered e- X-ray Sample bottom Sample top ±2 um e- beam should focused on sample without getting scattered or deflected by air, therefore e- microscopy requires vaccum.
  • 33. 33 German Scientist Ernst Ruska(1933), Nobel prize in physics (1986) Electron gun generate electron and accelerated them to an energy level (0.1- 30keV) Electron lenses focuses the beam to smaller spot size to produce sharp
  • 34. 34
  • 36. 36
  • 37. 37  Appropriate size to fit specimen chamber  Sample should be dry  Hard dry materials eg. Wood, feather, dried insects can be examined with little further treatment.  For living cells, tissues & soft bodied organisms require chemical fixation to preserve & stabilize their strcture.  Dry specimen is mounted on specimen tube using adhesive. Sample Preparation  Amplification: e- amplifiers of various types used to amplify signals  Detectors: Back scattered e-s & 2° e-s can be detected by specialized detectors. Resulting image will be distribution map of intensity of signal emitted from scanned scanned area of specimen. In older microscopes image was captured.
  • 38. 38 Affecting factors Applications: Morphology & distribution of NPs Precautions: Placed whole system in vaccum (To avoid oxidation & contamination & to prohibit
  • 39. 39  Non conducting material requires coating of thin metal film (Au/pt) [< 10nm]& it becomes conducting (Insulating material get charged due to incident e-s & images may become faulty & blurred.) Advantag es  First method to obtain image of tiny particles.  Biological samples can be analyzed with little treatment.  Non-destructive method. Disadvanta ges
  • 40. 40 Transmission Electron Microscopy (TEM) Principle: Transmitted e- hit fluorescent screen gives shadow image.  Sample should be very thin  Sample is powdered & made thin film  Energy of e- should very high (greater than 50000 ev)
  • 41. 41 Sr. No . SEM TEM 1 e- beam scans over surface of sample e- beam passes thro’ thin film 2 Sample can be of any thickness & mounted on stub Thin sample supported on grid 3 Specimen stage is at bottom Specimen stage is at halfway down 4 Image is of surface of sample Image is two dimensional projection of sample 5 Image shown on TV monitor Image shown on fluorescent screen Diff. between SEM &TEM
  • 42. 42 Top-Down, Bottom-up Fabrication Top-Down: Larger Smaller High mfg. capability, low spatial resolution Bottom up: Molecule or atom come together in proper way to form required nanostructure. High spatial resolution, limited mfg. capability But, now combination of both is most famous
  • 43. 43 Methods of Synthesis of NPs A) Colloidal Route:(10-9 to 10-6 m) To synthesize metal NPs Reduction of metal salt by proper reducing agent eg. HAucl4 + Na3C6H5O7 Au+ + C6H5O7 - + HCl +3NaCl [Chloroauric [Trisod. Citrate] Acid]
  • 44. 44 Process for synthesis of AuNPs Au+ + e- Nucleati on A u Condensati on Surface reduction C6H5O7 - C 6 H 5 O 7 - C 6 H 5 O 7 - C 6 H 5 O 7 - Electrostatic
  • 45. 45 e.g. ZnS NPs •ZnCl2 or Zn(NO3)2 or ZnSO4 dissolved in aq. or non-aq. Solvents •Added Na2S or H2S gas passed •ZnS particles formed i.e. ZnCl2 + Na2S -----------> ZnS + 2NaCl ZnCl2 + 2NaOH -----------> Zn(OH)2 + 2 NaCl Zn(OH)2 -----------> ZnO + H2O Semiconductor NPs by Colloidal route
  • 46. 46 Chemical Capping  Capping used in synthesis of NPs.  Some chemicals are used in colloidal synthesis to inhibit NP overgrowth & aggregation & to control structural characteristics.  Thro’ colloidal route NPs also obtained by drying off the liquid.  Spin coating or dipping coating also used to obtain thin film of capped particles.  Coating should be stable & non interactive with the particle except at surface. Disadvantages: Chemicals used for capping may be toxic & difficult to handle.
  • 47. 47 Used to prepar e silica gel Perfor med in liquid phase Sol: Type of colloid, in which dispersed solid phase mixed in homogeneous liquid mediun. Process: Formation of colloidal suspension (sol) & gelation of sol (gel) to form network in liquid phase  Useful for self-assembly process for fabrication of NPs & three dimensional materials as aerogels
  • 48. 48 Four Steps of synthesis of Silica-gel 1) Hydrolysis reaction: -OR group substituted by –OH group Occur without catalyst If catalyst used increases rate of reaction Catalyst: NaOH, NH3, HF, CH3COOH, etc. ≡Si-OEt + H2O ------------> ≡Si-OH + EtOH
  • 49. 49 3) Polymerization: Step growth of particle takesplace  Growth depends upon PH, tempt, etc.  Complex reaction Si(OEt)2 ------------> -SiO2- 4) Agglomeration: Network particles start to form thro’ liquid medium due to which gel is formed. All 4 steps are affected by PH, tempt., time of reaction, catalyst. Application: Inorganic coating, Reactive oxides, Ceramic materials, Ceramic coating, Glasses, Mfg. of silica gel catalyst, Special types of alumino-silicates gels (e.g. Imgolite:
  • 50. 50 Sol-Gel process overview HCl Soln of Metals+ Alkoxysilanes Alkoxides+Alcohol /Alcogel O2/500°C Supercritical drying Colloid
  • 51. 51 Chemical reduction Method  Metal salt solution treated with suitable reducing agent.  Added appropriate stabilizing agent.  Further treatmentDried & get NPs. Eg. AgNPs Ag NO3 Soln + Hydrazine hydrate + Sod. Doacyl sulfate & Sod. Citrate (stabilizing agent) Pale yellow or Pale red colour (due to formn of AgNPs) Purified by centrifugation AgNPs washed with deionized water under N2 gas to remove excess Ag ions Dried powder of nanosize silver can be obtained by freeze drying Particle size 15 to 48 nm
  • 52. 52 Electrochemical method  Process of using electric current to coat on electrically conductive object with thin layer of metal. As a result of electrical current, electrolysis of electrolytic solution occurs & deposition of metal in the form NP takesplace on cathode, so called as electrodepositon.  As result of reduction reaction metal ions in a solution deposits on negatively charged cathode metal atoms. e.g. Ag, Cu, Au Nps can be synthesized.
  • 53. 53 Anode Metal ions Cathode (Substrate) Electrolyte Nanocrystalline deposit  e.g. preparation of AgNP Advantages:  Cheap & fast Method.  Thickness of layer depends on current density & time of current flow.  The deposit can be detached by suitable method  Recent Mostly used process by many researchers.
  • 54. 54 Electronics: NPs of ZnSe, ZnS, CdS improves resolution of TV screen. So used in HD TV & computer monitors. Energy (Fuel cells): NM as catalyst to produce hydrogen ions from fuel. High Storage capacity batteries: Aerogel & Ni-MH Industry: Tougher & harder cutting tools. e.g. WC, TaC, TiC NPs, etc. Automobile with greater efficiency: Applications of NMs
  • 55. 55 Health Care: -Heart valves from ZrO ceramics, SiC (low wt., extreme hardness, high strength, corrosion resistance, etc.) -NM used in cancer therapy, drug release, etc. Food- Agriculture: Food packaging, food processing catalyst, food quality analysis sensor, etc. Textile: NM used to produce medical textile, technical textile, antistain textile, self- cleaning textile, etc. Environment: Pollution scavengers, pollution monitoring sensors,etc.
  • 56. 56 Domestic Appliances: NMs used in various domestic appliances such as air purifiers, air conditioners, water purifiers, refrigerators, window material, etc. High sensitive sensors: NM of ZrO is used in CO sensor. NM also used in smoke detectors, ice detectors on aircraft wings, automobile engine performance sensors. NM used in aerospace components, longer lasting satellites, self-cleaning glasses,etc. Future Applications: Quantum computers, microelectro-mechanical systems, optoelctronic devices, environmental devices, nano-electronic &
  • 57. 57
  • 58. 58