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Radiation Induced Narrow Channel Effect: F. Faccio and G.Cervelli, IEEE
Trans. Nucl. Science, Vol.52, N.6 (2005) pp.2413-2420
http://dx.doi.org/10.1109/TNS.2005.860698
Radiation Induced Short Channel Effect: F. Faccio et al., IEEE Trans. Nucl.
Science, Vol.62 , N.6 (2015) http://dx.doi.org/10.1109/TNS.2015.2492778
Results of FE65-P2 Pixel Readout Test Chip for High Luminosity LHC
Upgrades: M. Garcia-Sciveres et al., 38th International Conference on High
Energy Physics, CERN-RD53-PROC-16-001
65 nm has been extensively tested in radiation doses up to 300 Mrad
with nice results
Has excellent low power characteristics and is well suited for low noise
analog functions
Manufacturers designate 65nm as a “strong technology mode” which
will stick around for a long time
Reasonably affordable for HEP experiments with smaller volumes,
allows multi-project wafer runs for R&D

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KatherineDunneAPS2017

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  • 20. Radiation Induced Narrow Channel Effect: F. Faccio and G.Cervelli, IEEE Trans. Nucl. Science, Vol.52, N.6 (2005) pp.2413-2420 http://dx.doi.org/10.1109/TNS.2005.860698 Radiation Induced Short Channel Effect: F. Faccio et al., IEEE Trans. Nucl. Science, Vol.62 , N.6 (2015) http://dx.doi.org/10.1109/TNS.2015.2492778 Results of FE65-P2 Pixel Readout Test Chip for High Luminosity LHC Upgrades: M. Garcia-Sciveres et al., 38th International Conference on High Energy Physics, CERN-RD53-PROC-16-001
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  • 29. 65 nm has been extensively tested in radiation doses up to 300 Mrad with nice results Has excellent low power characteristics and is well suited for low noise analog functions Manufacturers designate 65nm as a “strong technology mode” which will stick around for a long time Reasonably affordable for HEP experiments with smaller volumes, allows multi-project wafer runs for R&D