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LASER Characteristics
Basic Concept
Population inversion
Old LASERs
Disadvantages of old LASERs
• Large area
• Low output
• Low life
• Not optically integrable
Optical feedback and laser oscillation
• Light amplification in the laser occurs when a photon colliding with an atom in the
excited energy state causes the stimulated emission of a second photon and then
both these photons release two more.
• This is accomplished by placing or forming mirrors (plane or curved) at either end
of the amplifying medium, as illustrated in Figure 6.4.
• The optical cavity formed is more analogous to an oscillator than an amplifier as it
provides positive feedback of the photons by reflection at the mirrors at either end
of the cavity.
• Furthermore, if one mirror is made partially transmitting, useful radiation may
escape from the cavity
PN Junction LASER
Heterojunctions
Advantages of hetro-structure
• Career confinement
• Optical confinement
• Less absorption
• More light output
The semiconductor injection laser
DH Semiconductor injection laser
Strip DH LASER
Various injection LASER structures
• Gain-guided lasers
• Index-guided lasers
• Quantum-well lasers
• Quantum-dot lasers
Gain guided LASER
Disadvantages
• High threshold current
• Kinks in the current
Index guided LASER
add another level of confinement by surrounding the stripe in the active layer
with a material of a lower refractive index.
Index guided vs gain guided
Quantum well LASER
Quantum well LASER
• Hence, quantum-well lasers exhibit an inherent
advantage over conventional DH devices in that they
allow high gain at low carrier density, thus providing
the possibility of significantly lower threshold currents.
• Both single-quantum-well (SQW), corresponding to a
single active region, and multiquantum-well (MQW),
corresponding to multiple active regions, lasers are
utilized Better confinement of the optical mode is
obtained in MQW lasers in comparison with SQW
lasers, resulting in a lower threshold current density for
these devices.
Quantum dot LASER
• More recently, quantum-well lasers have been
developed in which the device contains a
single discrete atomic structure or so-called
quantum dot (QD) [Ref. 35].
• Quantum dots are small elements that contain
a tiny droplet of free electrons forming a
quantum-well structure. Hence a QD laser is
also referred to as a dot-in-a-well device
Quantum dot LASER
Quantum dot LASER
• They are fabricated using semiconductor crystalline materials and
have typical dimensions between nanometers and a few microns.
The size and shape of these structures and therefore the number of
electrons they contain may be precisely controlled such that a QD
can have anything from a single electron to several thousand
electrons.
• Theoretical treatment of QDs indicates that they do not suffer from
thermal broadening and their threshold current is also temperature
insensitive .
• If the conventional injection laser diode is regarded as three
dimensional and a quantum well (i.e. an SQW where an array of
SQWs forms an MQW structure) is confined to two dimensions,
then the QD structure can be considered to be zero dimensional.
• It should be noted, however, that the single dimensional structure
forms a quantum wire or dash.
Different LASER structures
Single mode LASER
Distributed Bragg reflector(DBR)
• In the DBR laser the grating is etched only near
the cavity ends and hence distributed feedback
does not occur in the central active region.
• The unpumped corrugated end regions effectively
act as mirrors whose reflectivity results from the
distributed feedback mechanism which is
therefore dependent on wavelength.
• DBR is more stable frequency output as compare
to DFB
• Fabrication of DBR is difficult.
LASER characteristics
Einstein relation
The population of the two energy levels of such a system is described by
Boltzmann statistics which give:
where N1 and N2 represent the density of atoms in energy levels E1 and E2,
respectively, with g1 and g2 being the corresponding degeneracies† of the levels, K is
Boltzmann’s constant and T is the absolute temperature
Absorption
Absorption =spontaneous+ stimulated
emission
Spontaneous emission
N2A21
Einstein relation
N1
N2
Einstein relation
Planck relation of black
body radiation
Laser

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Laser

  • 3.
  • 5.
  • 6.
  • 8. Disadvantages of old LASERs • Large area • Low output • Low life • Not optically integrable
  • 9. Optical feedback and laser oscillation • Light amplification in the laser occurs when a photon colliding with an atom in the excited energy state causes the stimulated emission of a second photon and then both these photons release two more. • This is accomplished by placing or forming mirrors (plane or curved) at either end of the amplifying medium, as illustrated in Figure 6.4. • The optical cavity formed is more analogous to an oscillator than an amplifier as it provides positive feedback of the photons by reflection at the mirrors at either end of the cavity. • Furthermore, if one mirror is made partially transmitting, useful radiation may escape from the cavity
  • 10.
  • 12.
  • 13.
  • 15. Advantages of hetro-structure • Career confinement • Optical confinement • Less absorption • More light output
  • 18.
  • 20.
  • 21. Various injection LASER structures • Gain-guided lasers • Index-guided lasers • Quantum-well lasers • Quantum-dot lasers
  • 23. Disadvantages • High threshold current • Kinks in the current
  • 24. Index guided LASER add another level of confinement by surrounding the stripe in the active layer with a material of a lower refractive index.
  • 25. Index guided vs gain guided
  • 27. Quantum well LASER • Hence, quantum-well lasers exhibit an inherent advantage over conventional DH devices in that they allow high gain at low carrier density, thus providing the possibility of significantly lower threshold currents. • Both single-quantum-well (SQW), corresponding to a single active region, and multiquantum-well (MQW), corresponding to multiple active regions, lasers are utilized Better confinement of the optical mode is obtained in MQW lasers in comparison with SQW lasers, resulting in a lower threshold current density for these devices.
  • 28. Quantum dot LASER • More recently, quantum-well lasers have been developed in which the device contains a single discrete atomic structure or so-called quantum dot (QD) [Ref. 35]. • Quantum dots are small elements that contain a tiny droplet of free electrons forming a quantum-well structure. Hence a QD laser is also referred to as a dot-in-a-well device
  • 30. Quantum dot LASER • They are fabricated using semiconductor crystalline materials and have typical dimensions between nanometers and a few microns. The size and shape of these structures and therefore the number of electrons they contain may be precisely controlled such that a QD can have anything from a single electron to several thousand electrons. • Theoretical treatment of QDs indicates that they do not suffer from thermal broadening and their threshold current is also temperature insensitive . • If the conventional injection laser diode is regarded as three dimensional and a quantum well (i.e. an SQW where an array of SQWs forms an MQW structure) is confined to two dimensions, then the QD structure can be considered to be zero dimensional. • It should be noted, however, that the single dimensional structure forms a quantum wire or dash.
  • 33.
  • 34.
  • 35.
  • 36. Distributed Bragg reflector(DBR) • In the DBR laser the grating is etched only near the cavity ends and hence distributed feedback does not occur in the central active region. • The unpumped corrugated end regions effectively act as mirrors whose reflectivity results from the distributed feedback mechanism which is therefore dependent on wavelength. • DBR is more stable frequency output as compare to DFB • Fabrication of DBR is difficult.
  • 38.
  • 39.
  • 40.
  • 41.
  • 42. Einstein relation The population of the two energy levels of such a system is described by Boltzmann statistics which give: where N1 and N2 represent the density of atoms in energy levels E1 and E2, respectively, with g1 and g2 being the corresponding degeneracies† of the levels, K is Boltzmann’s constant and T is the absolute temperature Absorption Absorption =spontaneous+ stimulated emission Spontaneous emission N2A21
  • 44. Einstein relation Planck relation of black body radiation