Original P-Channel Mosfet AO4419 4419 30V 9.7A SOP-8 New Alpha&Omega https://authelectronic.com/original-p-channel-mosfet-ao4419-4419-30v-9-7a-sop-8-new-alpha-omega

1. AO4419
30V P-Channel MOSFET
General Description Product Summary
VDS
ID (at VGS=-10V) -9.7A
RDS(ON) (at VGS=-10V) < 20mΩ
RDS(ON) (at VGS = -4.5V) < 35mΩ
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State RθJL
°C
Thermal Characteristics
W
3.1
Maximum Junction-to-Ambient A
2TA=70°C
Junction and Storage Temperature Range -55 to 150
°C/W
RθJA
31
59
40
UnitsParameter Typ Max
V±20Gate-Source Voltage
Drain-Source Voltage -30
The AO4419 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
-30V
A
ID
-9.7
-7.8
-70
mJ
Avalanche Current C
36
A-27
TA=25°C
TA=70°C
Power Dissipation B
PD
Avalanche energy L=0.1mH C
Pulsed Drain Current C
Continuous Drain
Current
TA=25°C
Maximum Junction-to-Lead °C/W
°C/WMaximum Junction-to-Ambient A D
16
75
24
G
D
S
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
G
Rev 6: May 2011 www.aosmd.com Page 1 of 6

2. AO4419
Symbol Min Typ Max Units
BVDSS -30 V
VDS=-30V, VGS=0V -1
TJ=55°C -5
IGSS ±100 nA
VGS(th) Gate Threshold Voltage -1.5 -2.0 -2.5 V
ID(ON) -70 A
16.5 20
TJ=125°C 24 29
26 35 mΩ
gFS 27 S
VSD -0.75 -1 V
IS -4 A
ISM -70 A
Ciss 1040 pF
Coss 180 pF
Crss 125 pF
Rg 2 4 6 Ω
Qg(10V) 19 nC
Qg(4.5V) 9.6 nC
Qgs 3.6 nC
Qgd 4.6 nC
tD(on) 10 ns
tr 5.5 ns
tD(off) 26 ns
tf 9 ns
trr 11.5 ns
Qrr 25 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
IS=-1A,VGS=0V
VDS=-5V, ID=-9.7A
IF=-9.7A, dI/dt=500A/µs
SWITCHING PARAMETERS
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Reverse Transfer Capacitance
VGS=0V, VDS=-15V, f=1MHz
Pulsed Body-Diode CurrentC
Body Diode Reverse Recovery Charge IF=-9.7A, dI/dt=500A/µs
Turn-Off DelayTime
VGS=-10V, VDS=-15V, ID=-9.7A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
RDS(ON) Static Drain-Source On-Resistance
IDSS µA
VDS=VGS ID=-250µA
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage ID=-250µA, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-9.7A
On state drain current
VGS=-4.5V, ID=-7A
Forward Transconductance
Diode Forward Voltage
VGS=-10V, VDS=-15V, RL=1.5Ω,
RGEN=3Ω
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
A. The value of RθJA is measured with the device mounted on 1in2
FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
Rev 6: May 2011 www.aosmd.com Page 2 of 6

3. AO4419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
10
20
30
40
0 1 2 3 4 5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-ID(A)
10
15
20
25
30
35
0 5 10 15 20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
RDS(ON)(mΩΩΩΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
-IS(A)
25°C
125°C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
NormalizedOn-Resistance
VGS=-4.5V
ID=-7A
VGS=-10V
ID=-9.7A
10
20
30
40
50
60
2 4 6 8 10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
RDS(ON)(mΩΩΩΩ)
25°C125°C
VDS=-5V
VGS=-4.5V
VGS=-10V
ID=-9.7A
25°C
125°C
0
10
20
30
40
50
60
0 1 2 3 4 5
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
-ID(A)
VGS=-3.0V
-3.5V
-7V-10V
-4.5V
-5V
Rev 6: May 2011 www.aosmd.com Page 3 of 6

4. AO4419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15 20
Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS(Volts)
0
200
400
600
800
1000
1200
1400
1600
0 5 10 15 20 25 30
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance(pF)
Ciss
Coss
Crss
VDS=-15V
ID=-9.7A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Power(W)
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-VDS (Volts)
-ID(Amps)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10µs
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100µs
10ms
1
10
100
1 10 100 1000
Time in avalanche, tA (µµµµs)
Figure 9: Single Pulse Avalanche capability (Note
C)
-IAR(A)PeakAvalancheCurrent
T A=150°C
T A=25°C
T A=100°C
T A=125°C
Rev 6: May 2011 www.aosmd.com Page 4 of 6

5. AO4419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
ZθθθθJANormalizedTransient
ThermalResistance
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
Rev 6: May 2011 www.aosmd.com Page 5 of 6

6. AO4419
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
VddVgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
L
-
+
2
E = 1/2 LIARAR
BVDSS
I AR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
trr
-Isd
-Vds
F-I
-I
VDC
DUT VddVgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
t t
t
90%
10%
r
on
d(off) f
off
d(on)
Rev 6: May 2011 www.aosmd.com Page 6 of 6