Original Mosfet N-channel IPAW60R600 60S600CE 600V 6A TO-220F New

1. 1
IPAW60R600CE
2016-03-31Final Data Sheet
PG-TO220FullPAKWideCreepage
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
•Widedistanceof4.25mmbetweentheleads
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCDPDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 600 mΩ
ID. 10.3 A
Qg.typ 20.5 nC
ID,pulse 19 A
Eoss@400V 1.9 µJ
Type/OrderingCode Package Marking RelatedLinks
IPAW60R600CE
PG - TO220 FullPAK
WideCreepage
60S600CE see Appendix A

2. 2
600VCoolMOSªCEPowerTransistor
IPAW60R600CE
2016-03-31Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3. 3
600VCoolMOSªCEPowerTransistor
IPAW60R600CE
2016-03-31Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1)
ID
-
-
-
-
10.3
6.5
A
TC=25°C
TC=100°C
Pulsed drain current2)
ID,pulse - - 19 A TC=25°C
Avalanche energy, single pulse EAS - - 133 mJ ID=1.3A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.20 mJ ID=1.3A; VDD=50V; see table 10
Avalanche current, repetitive IAR - - 1.3 A -
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f1 Hz)
Power dissipation (Full PAK) Ptot - - 28 W TC=25°C
Storage temperature Tstg -40 - 150 °C -
Operating junction temperature Tj -40 - 150 °C -
Mounting torque - - - 50 Ncm M2.5 screws
Continuous diode forward current IS - - 7.3 A TC=25°C
Diode pulse current2)
IS,pulse - - 19 A TC=25°C
Reverse diode dv/dt3)
dv/dt - - 15 V/ns
VDS=0...400V,ISD=IS,Tj=25°C
see table 8
Maximum diode commutation speed dif/dt - - 500 A/µs
VDS=0...400V,ISD=IS,Tj=25°C
see table 8
Power dissipation (Non FullPAK)
TO-220
Ptot - - 82 W -
Insulation withstand voltage for
TO-220FP
VISO - - 2500 V Vrms,TC=25°C,t=1min
1)
Limited by Tj max. Maximum duty cycle D=0.50, TO220 equivalent
2)
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG

4. 4
600VCoolMOSªCEPowerTransistor
IPAW60R600CE
2016-03-31Final Data Sheet
2Thermalcharacteristics
Table3Thermalcharacteristics(FullPAK)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 4.5 °C/W -
Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

5. 5
600VCoolMOSªCEPowerTransistor
IPAW60R600CE
2016-03-31Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=0.25mA
Gate threshold voltage V(GS)th 2.5 3.0 3.5 V VDS=VGS,ID=0.2mA
Zero gate voltage drain current IDSS
-
-
-
10
1
-
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)
-
-
0.54
1.40
0.60
-
Ω
VGS=10V,ID=2.4A,Tj=25°C
VGS=10V,ID=2.4A,Tj=150°C
Gate resistance RG - 10 - Ω f=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 444 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 30 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
energy related1) Co(er) - 21 - pF VGS=0V,VDS=0...480V
Effective output capacitance,
time related2) Co(tr) - 88 - pF ID=constant,VGS=0V,VDS=0...480V
Turn-on delay time td(on) - 10 - ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable9
Rise time tr - 8 - ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable9
Turn-off delay time td(off) - 58 - ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable9
Fall time tf - 11 - ns
VDD=400V,VGS=13V,ID=3A,
RG=6.8Ω;seetable9
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 2.5 - nC VDD=480V,ID=3A,VGS=0to10V
Gate to drain charge Qgd - 10.5 - nC VDD=480V,ID=3A,VGS=0to10V
Gate charge total Qg - 20.5 - nC VDD=480V,ID=3A,VGS=0to10V
Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=3A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V

6. 6
600VCoolMOSªCEPowerTransistor
IPAW60R600CE
2016-03-31Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=3A,Tj=25°C
Reverse recovery time trr - 250 - ns
VR=400V,IF=3A,diF/dt=100A/µs;
see table 8
Reverse recovery charge Qrr - 2.1 - µC
VR=400V,IF=3A,diF/dt=100A/µs;
see table 8
Peak reverse recovery current Irrm - 16 - A
VR=400V,IF=3A,diF/dt=100A/µs;
see table 8

7. 7
600VCoolMOSªCEPowerTransistor
IPAW60R600CE
2016-03-31Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(FullPAK)
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
5
10
15
20
25
30
35
Ptot=f(TC)
Diagram2:Safeoperatingarea(FullPAK)
VDS[V]
ID[A]
100
101
102
103
10-4
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea(FullPAK)
VDS[V]
ID[A]
100
101
102
103
10-4
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance(FullPAK)
tp[s]
ZthJC[K/W]
10-5
10-4
10-3
10-2
10-1
100
101
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T

8. 8
600VCoolMOSªCEPowerTransistor
IPAW60R600CE
2016-03-31Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20 25
0
5
10
15
20
25
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
5
10
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0 5 10 15 20
0.80
1.00
1.20
1.40
1.60
1.80
2.00
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[Ω]
-40 -15 10 35 60 85 110 135
0.10
0.30
0.50
0.70
0.90
1.10
1.30
1.50
typ
98%
RDS(on)=f(Tj);ID=2.4A;VGS=10V

9. 9
600VCoolMOSªCEPowerTransistor
IPAW60R600CE
2016-03-31Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0 2 4 6 8 10 12
0
5
10
15
20
25
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 10 20 30
0
1
2
3
4
5
6
7
8
9
10
480 V120 V
VGS=f(Qgate);ID=3Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0
10-1
100
101
102
25 °C
125 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
20
40
60
80
100
120
140
EAS=f(Tj);ID=1.3A;VDD=50V

10. 10
600VCoolMOSªCEPowerTransistor
IPAW60R600CE
2016-03-31Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-40 -15 10 35 60 85 110 135 160
520
540
560
580
600
620
640
660
680
700
VBR(DSS)=f(Tj);ID=0.25mA
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500
0
1
2
3
Eoss=f(VDS)

11. 11
600VCoolMOSªCEPowerTransistor
IPAW60R600CE
2016-03-31Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trr
tF tS
QF QS
dIF / dt
dIrr / dt
VDS(peak)
Qrr = QF +QS
trr =tF +tS
VDS
IF
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on)
td(off)tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID

12. 12
600VCoolMOSªCEPowerTransistor
IPAW60R600CE
2016-03-31Final Data Sheet
6PackageOutlines
MILLIMETERS
4.25 (BSC)
c
D
E
D1
L1
e
L
N
b2
A
A1
b
A2
DIM
0.40
1.70
15.47
9.17
10.70
12.58
3
MIN
4.50
2.34
0.75
2.65
0.609
0.361
0.421
0.016
0.177
0.092
0.030
0.104
0.495
0.60
16.27
11.30
13.38
2.30
4.90
2.74
0.90
2.95
MAX
0.024
3
0.641
0.445
0.527
0.091
INCHES
MIN MAX
0.193
0.108
0.035
0.116
EUROPEAN PROJECTION
ISSUE DATE
0
SCALE
4 mm
REVISION
28-04-2015
01
DOCUMENT NO.
0.167 (BSC)
0.067
0.98 0.0391.26 0.050
3.00 0.1183.30 0.130
b3
b5 3.00 0.118- -
1.00 0.0391.40 0.055
DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS
E
D
D1
L1
H
b2
b
b5
b3
P
c
A
A1
Q
A2
0
2
2
L0.381 B A
e
Q 3.10 3.50 0.1380.122
H 28.25 1.11229.45 1.159
Z8B00176938
Figure1OutlinePG-TO220FullPAKWideCreepage,dimensionsinmm/inches

13. 13
600VCoolMOSªCEPowerTransistor
IPAW60R600CE
2016-03-31Final Data Sheet
7AppendixA
Table11RelatedLinks
• IFXCoolMOSTM
CEWebpage:www.infineon.com
• IFXCoolMOSTM
CEapplicationnote:www.infineon.com
• IFXCoolMOSTM
CEsimulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com

14. 14
600VCoolMOSªCEPowerTransistor
IPAW60R600CE
2016-03-31Final Data Sheet
RevisionHistory
IPAW60R600CE
Revision:2016-03-31
Previous Revision
Date Subjects (major changes since last revision)
2015-10-07 Release of final version
2015-10-28 Revised electrical characteristics
2016-03-31 Modified Id ratings
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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©2016InfineonTechnologiesAG
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failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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