8. Static Random Access Memory
Uses multiple transistors for cell.
Doesn't have a capacitor in each cell.
It is made up of flip flop circuit.
It use voltage to store data.
9. Static Random Access Memory
Each SRAM is made of six transistors.
Each bit in an SRAM is stored on four transistor or
more.
15. Greater storage capacity.
Consumes less power.
Faster access times than electronic RAM.
MRAM retains its contents after power is
removed from the computer.
Magnetoresistive Random Access memory
16. SDRAM – 66Mhz, 100Mhz, 133Mhz
DDR1 – 266Mhz, 333Mhz, 400Mhz
DDR2 – 400Mhz, 533Mhz, 677Mhz, 800Mhz
DDR3 – 400Mhz, 533Mhz, 677Mhz, 800Mhz, 933Mhz, 1066Mhz
DDR4 – 1600Mhz, 1866Mhz, 2133Mhz, 2400Mhz, 2666Mhz, 3200Mhz, 4266Mhz
JEDEC Solid State Technology Association
Joint Electron Device Engineering Council
1.5 or 1.65 v
800 and 2400
16 Gb
1.2 v
1600 and 3200
128 Gb