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All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: IDL10G65C5
MANUFACTURER: Infineon
REMARK: Professional Model
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
3
U1
IDL10G65C5
R1
0.01m
V1
0Vdc
0
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
0A
2A
4A
6A
8A
10A
12A
14A
16A
18A
20A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
4
Comparison Graph
Circuit Simulation result
Comparison table
IF (A)
VF (V)
%Error
Measurement Simulation
1 1.000 1.000 0.00
2 1.070 1.070 0.00
5 1.250 1.248 -0.16
10 1.520 1.521 0.07
20 2.040 2.040 0.00
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
5
V(R)
100mV 1.0V 10V 100V 1.0KV
I(V2)/(650V/100u)
0
50p
100p
150p
200p
250p
300p
350p
400p
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 100us
V2 = 650
V2
0Vdc
U1
IDL10G65C5
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
6
Comparison Graph
Circuit Simulation result
Comparison table
VR(V)
C (pF)
%Error
Measurement Simulation
0.1 365.000 361.300 -1.01
0.2 358.000 352.800 -1.45
0.5 335.000 330.400 -1.37
1 300.000 300.100 0.03
2 255.000 256.000 0.39
5 190.000 186.700 -1.74
10 144.000 138.100 -4.10
20 104.000 100.700 -3.17
50 68.000 69.000 1.47
100 53.000 55.100 3.96
200 45.000 46.800 4.00
500 40.000 40.780 1.95
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
7
V_V1
100V 200V 300V 400V 500V 600V
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
U1
IDL10G65C5
V1
0Vdc
R1
100m
0
Reverse Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
8
Comparison Graph
Circuit Simulation result
Comparison table
IR (A)
VR (V)
%Error
Measurement Simulation
2.00E-09 450.000 443.400 -1.47
1.00E-08 510.000 514.000 0.78
1.00E-07 592.000 595.300 0.56
5.00E-07 650.000 650.100 0.02

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SPICE MODEL of IDL10G65C5 (Professional Model) in SPICE PARK

  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: IDL10G65C5 MANUFACTURER: Infineon REMARK: Professional Model
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 3 U1 IDL10G65C5 R1 0.01m V1 0Vdc 0 V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 0A 2A 4A 6A 8A 10A 12A 14A 16A 18A 20A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 1 1.000 1.000 0.00 2 1.070 1.070 0.00 5 1.250 1.248 -0.16 10 1.520 1.521 0.07 20 2.040 2.040 0.00
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 5 V(R) 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/100u) 0 50p 100p 150p 200p 250p 300p 350p 400p 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 100us V2 = 650 V2 0Vdc U1 IDL10G65C5 Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 6 Comparison Graph Circuit Simulation result Comparison table VR(V) C (pF) %Error Measurement Simulation 0.1 365.000 361.300 -1.01 0.2 358.000 352.800 -1.45 0.5 335.000 330.400 -1.37 1 300.000 300.100 0.03 2 255.000 256.000 0.39 5 190.000 186.700 -1.74 10 144.000 138.100 -4.10 20 104.000 100.700 -3.17 50 68.000 69.000 1.47 100 53.000 55.100 3.96 200 45.000 46.800 4.00 500 40.000 40.780 1.95
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 7 V_V1 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA U1 IDL10G65C5 V1 0Vdc R1 100m 0 Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 8 Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 2.00E-09 450.000 443.400 -1.47 1.00E-08 510.000 514.000 0.78 1.00E-07 592.000 595.300 0.56 5.00E-07 650.000 650.100 0.02