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AC model is an equivalent circuit that represents the AC characteristics of the transistor. It is a combination
of circuit elements, properly chosen, that best approximates the actual behavior of a semiconductor device under
specific operating conditions.
To analyze the working of a transistor in amplifier circuits, it beneficial to represent the devices in the form
of model circuits. The model circuit of transistor uses many interior parameters of transistor to define the operation.
There are two models commonly used in the small-signal ac analysis of transistor networks:
1. π‘Ÿπ‘’ equivalent (dynamic resistance) model.
2. hybrid equivalent (h-parameter) model.
The Parameters 𝑍𝑖 , π‘π‘œ, 𝐴𝑣, and 𝐴𝑖 are the most important parameters for the analysis of the AC characteristics of a
transistor circuit.
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed
Transistor AC Modeling
1
Important procedures for ac analysis (small signal analysis)
1. Setting all dc sources to zero and replacing them by a short-circuit equivalent
2. Replacing all capacitors by a short-circuit equivalent
3. Removing all elements bypassed by the short-circuit equivalents introduced by steps 1 and 2
4. Redrawing the network in a more convenient and logical form.
5. Defining the important parameters of the transistor model.
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed
Transistor AC Modeling
2
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 3
Common-Emitter Configuration
The equivalent circuit for the common-emitter configuration will be constructed using the device characteristics and a
number of approximations. Starting with the input side, we find the applied voltage π‘½π’Š is equal to the voltage 𝑽𝒃𝒆
(0.7) with the input current being the base current 𝑰𝒃.
If we redraw the collector characteristics to have a constant 𝜷 (another approximation), the entire characteristics at the
output section can be replaced by a current controlled source whose magnitude is beta times the base current.
Because all the input and output parameters of the original configuration are now present, the equivalent network for
the common-emitter configuration has been established.
The equivalent model can be improved by first replacing the diode by its equivalent resistance 𝒓𝒅 =
πŸπŸ”π’Žπ‘½
𝑰𝑫
.
Using the subscript e because the determining current is the emitter current will result in 𝒓𝒆 =
πŸπŸ”π’Žπ‘½
𝑰𝑬
𝑍𝑖 =
𝑉𝑖
𝐼𝑏
=
𝑉𝑏𝑒
𝐼𝑏
𝑉𝑏𝑒 = πΌπ‘’π‘Ÿπ‘’ = 𝐼𝑐 + 𝐼𝑏 π‘Ÿπ‘’
𝑉𝑏𝑒 = 𝛽𝐼𝑏 + 𝐼𝑏 π‘Ÿπ‘’ = 𝛽 + 1 πΌπ‘π‘Ÿπ‘’
𝑍𝑖 =
𝑉𝑏𝑒
𝐼𝑏
=
𝛽+1 πΌπ‘π‘Ÿπ‘’
𝐼𝑏
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed
The 𝒓𝒆Transistor Model
4
The result is that the impedance seen β€œlooking into” the base of the network is a resistor equal to
beta times the value of 𝒓𝒆. The collector output current is still linked to the input current by beta
as shown in the same figure.
The output impedance 𝒓𝒐 can be calculated and it is appear as a resistor in parallel with the output
as shown in the equivalent circuit.
For the common-emitter configuration there is a 180 Β° phase shift.
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 5
Common-Base Configuration
The common-base equivalent circuit will be developed in much the same manner as applied to the
common-emitter configuration.
For the ac response, the diode can be replaced by its equivalent ac resistance determined by
The network of is an excellent equivalent circuit for the analysis of most common-base configurations. It is
similar in many ways to that of the common-emitter configuration.
In general, common-base configurations have very low input impedance because it is essentially simply
𝒓𝒆. Typical values extend from a few ohms to perhaps 50Ξ©. The output impedance π‘Ÿπ‘œ will typically extend
into the mega ohm range.
Because the output current is opposite to the defined πΌπ‘œ direction, you will find in the analysis to follow
that there is no phase shift between the input and output voltages.
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 6
Common Emitter, Fixed Bias Configuration
Circuit analysis
Input impedance (π’π’Š)
π’π’Š = 𝑹𝑩 βˆ–βˆ– 𝛃𝒓𝒆
(For 𝑹𝑩 larger than 10 πœ·π’“π’†)
𝑍𝑖 β‰… π›½π‘Ÿπ‘’
Output impedance (𝒁𝒐)
𝒁𝒐 = 𝑹π‘ͺ βˆ–βˆ– 𝒓𝒐
(For 𝒓𝒐 larger than 10𝑹π‘ͺ)
𝑍o β‰… 𝑅C
Voltage gain (𝑨𝑽)
𝐴𝑣 =
π‘‰π‘œ
𝑉𝑖
𝑉
π‘œ = βˆ’π›½πΌπ‘ 𝑅𝐢 βˆ–βˆ– π‘Ÿπ‘œ
𝑉𝑖 = πΌπ‘π›½π‘Ÿπ‘’
𝐴𝑣 =
π‘‰π‘œ
𝑉𝑖
=
βˆ’π›½πΌπ‘ π‘…πΆβˆ–βˆ–π‘Ÿπ‘œ
π›½πΌπ‘π‘Ÿπ‘’
If 𝒓𝒐 ≫ πŸπŸŽπ‘Ήπ‘ͺ, so that the effect of π‘Ÿπ‘œ can be ignored,
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 7
EXAMPLE 1
For the network shown in the Figure determine:
a) Determine π‘Ÿπ‘’.
b) Determine 𝑍𝑖, π‘π‘œ and 𝐴𝑣 (with π‘Ÿπ‘œ = ∞).
c) Repeat parts (b) including (π‘Ÿπ‘œ = 50 π‘˜Ξ©).
Solution:
a) 𝐼𝐡 =
π‘‰πΆπΆβˆ’π‘‰π΅πΈ
𝑅𝐡
=
12 π‘‰βˆ’0.7 𝑉
470 π‘˜Ξ©
= 24.04 πœ‡π΄
𝐼𝐸 = 𝛽 + 1 𝐼𝐡 = 100 + 1 24.04π‘šπ΄ = 2.428π‘šπ΄
π‘Ÿπ‘’ =
26 π‘šπ‘‰
𝐼𝑒
=
26π‘šπ‘‰
2.428 π‘šπ΄
= 10.71 Ξ©
b) 𝑍𝑖 = 𝑅𝐡 βˆ–βˆ– π›½π‘Ÿπ‘’ = 1.07 π‘˜Ξ©
𝑍o = 𝑅C βˆ–βˆ– π‘Ÿo = 3π‘˜Ξ© βˆ–βˆ– ∞ = 𝑅C = 3 π‘˜Ξ©
𝐴𝑣 =
βˆ’ π‘…πΆβˆ–βˆ–π‘Ÿπ‘œ
π‘Ÿπ‘’
=
βˆ’π‘…πΆ
π‘Ÿπ‘’
=
βˆ’3 π‘˜Ξ©
10.7 Ξ©
= βˆ’280.1
c) 𝑍o = 𝑅C βˆ–βˆ– π‘Ÿo = 3π‘˜Ξ© βˆ–βˆ– 50π‘˜Ξ© = 2.83 π‘˜Ξ©
𝐴𝑣 =
βˆ’ π‘…πΆβˆ–βˆ–π‘Ÿπ‘œ
π‘Ÿπ‘’
=
βˆ’3 π‘˜Ξ©βˆ–βˆ–50 π‘˜Ξ©
10.7 Ξ©
= βˆ’264.24
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 8
Common Emitter, Voltage Divider Bias Configuration
π‘ΉπŸ and π‘ΉπŸ remain part of the input circuit, whereas 𝑅𝐢 is part of the output circuit. The parallel
combination of 𝑅1 and 𝑅2 is defined by 𝑹′ = π‘ΉπŸ βˆ₯ π‘ΉπŸ.
Input impedance (π’π’Š)
For large 𝑅𝐡 (larger than 10 π›½π‘Ÿπ‘’) 𝑍𝑖 β‰… π›½π‘Ÿπ‘’
Output impedance (𝒁𝒐)
For π‘Ÿo larger than 10RC) 𝑍o β‰… 𝑅C
Voltage gain (𝑨𝑽)
Electrical Engineering Dept / Year Two / Semester I / Electronic I / Dr. Ahmed M. Mohammed 9
EXAMPLE 2
For the network shown in the Figure determine:
a) Determine π‘Ÿπ‘’.
b) Determine 𝑍𝑖, π‘π‘œ and 𝐴𝑣 (with π‘Ÿπ‘œ = ∞).
c) Repeat parts (b) including (π‘Ÿπ‘œ = 50 π‘˜Ξ©).
Solution
a) 𝑉𝐡 = 𝑉𝐢𝐢 .
𝑅2
𝑅1+𝑅2
= 22
8.2π‘˜Ξ©
56+8.2 π‘˜Ξ©
= 2.81 𝑉
𝑉𝐸 = 𝑉𝐡 βˆ’ 𝑉𝐡𝐸 = 2.81 βˆ’ 0.7 = 2.11 𝑉
𝐼𝐸 =
𝑉𝐸
𝑅𝐸
=
2.11 𝑉
1.5 π‘˜Ξ©
= 1.41 π‘šπ΄
π‘Ÿπ‘’ =
26π‘šπ‘‰
1.41 π‘šπ΄
= 18.44 Ξ©
b) 𝑅′ = 𝑅1 βˆ₯ 𝑅2 = 7.15 π‘˜Ξ©
𝑍𝑖 = 𝑅′ βˆ–βˆ– π›½π‘Ÿπ‘’ = 1.35 π‘˜Ξ©
𝑍o = 𝑅C βˆ–βˆ– π‘Ÿo = 𝑅C = 6.8 π‘˜Ξ©
𝐴𝑣 =
βˆ’ π‘…πΆβˆ–βˆ–π‘Ÿπ‘œ
π‘Ÿπ‘’
=
βˆ’π‘…πΆ
π‘Ÿπ‘’
=
βˆ’6.8 π‘˜Ξ©
18.44 Ξ©
= βˆ’368.76
c) ???
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 10
CE Emitter-Base Configuration with 𝑅𝐸 (Unbypassed circuit analysis)
Applying Kirchhoff’s voltage law to the input side
𝑉𝑖 = πΌπ‘π›½π‘Ÿπ‘’ + 𝐼𝑒𝑅𝐸
𝑉𝑖 = πΌπ‘π›½π‘Ÿπ‘’ + (𝛽 + 1)𝐼𝑏𝑅𝐸
the input impedance looking into the network to the right of 𝑅𝐡is:-
𝑍𝑏 =
𝑉𝑖
𝐼𝑖
=
𝐼𝑏[π›½π‘Ÿπ‘’+ 𝛽+1 𝑅𝐸]
𝐼𝑏
= π›½π‘Ÿπ‘’ + 𝛽 + 1 𝑅𝐸
for
for
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 11
Unbypassed circuit analysis
Input impedance (𝐙𝐒).
π’π’Š = 𝑹𝑩 βˆ₯ 𝒁𝒃
Output impedance (𝐙𝐨)
𝒁𝒐 = 𝑹π‘ͺ
Voltage gain (𝑨𝒗)
𝑉𝑖 = 𝐼𝑏𝑍𝑏
𝑉
π‘œ = βˆ’πΌπ‘œπ‘…πΆ = βˆ’π›½πΌπ‘π‘…πΆ
𝐴𝑣 =
π‘‰π‘œ
𝑉𝑖
=
βˆ’π›½πΌπ‘π‘…πΆ
𝐼𝑏𝑍𝑏
=
βˆ’π›½π‘…πΆ
𝑍𝑏
𝐴𝑣 =
βˆ’π›½π‘…πΆ
𝛽(π‘Ÿπ‘’+𝑅𝐸)
=
βˆ’π‘Ήπ‘ͺ
𝒓𝒆+𝑹𝑬
𝐴𝑣 β‰…
βˆ’π‘Ήπ‘ͺ
𝑹𝑬
for
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 12
EXAMPLE 3
For the network, determine: (a) re, Zi, Zo, and Av without CE (unbypassed),
(b) Repeat the analysis with CEin place (bypassed).
solution
a) 𝐼𝐡 =
π‘‰πΆπΆβˆ’π‘‰π΅πΈ
𝑅𝐡+(𝛽+1)𝑅𝐸
=
20βˆ’0.7
470 π‘˜Ξ©+121(0.56π‘˜Ξ©)
= 35.89 πœ‡ 𝐴
𝐼𝐸 = 𝛽 + 1 𝐼𝐡 = 4.34 π‘šπ΄
π‘Ÿπ‘’ =
26 π‘šπ‘‰
𝐼𝐸
= 5.99 Ξ©
𝑍𝑏 = 𝛽 π‘Ÿπ‘’ + 𝑅𝐸 = 67.92 π‘˜Ξ©
𝑍𝑖 = 𝑅𝐡 βˆ₯ 𝑍𝑏 = 59.34 π‘˜Ξ©
π‘π‘œ = 𝑅𝐢 = 2.2 π‘˜Ξ©
𝐴𝑣 =
π‘‰π‘œ
𝑉𝑖
=
βˆ’π›½π‘…πΆ
𝑍𝑏
= βˆ’3.89
b) 𝑍𝑏 = π›½π‘Ÿπ‘’
𝑍𝑖 = 𝑅𝐡 βˆ₯ 𝑍𝑏 = 𝑅𝐡 βˆ₯ π›½π‘Ÿπ‘’ = 717.7Ξ©
π‘π‘œ = 𝑅𝐢 = 2.2 π‘˜Ξ©
𝐴𝑣 =
π‘‰π‘œ
𝑉𝑖
=
βˆ’π‘…πΆ
π‘Ÿπ‘’
= βˆ’367.28
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 13
EXAMPLE 4
For the network of Figure, with CE unconnected (Unbypassed), determine:
a) re, Zi, Zo, and Av. b) Repeat the analysis with CE in place (bypassed).
Solution (a) (Unbypassed)
DC analysis: - 𝑉𝐡 = 𝑉𝐢𝐢 .
𝑅2
𝑅1+𝑅2
= 1.6 𝑉
𝑉𝐸 = 𝑉𝐡 βˆ’ 𝑉𝐡𝐸 = 0.9 𝑉
𝐼𝐸 =
𝑉𝐸
𝑅𝐸
= 1.324 π‘šπ΄
π‘Ÿπ‘’ =
26 π‘šπ‘‰
𝐼𝐸
= 19.64 Ξ©
AC analysis 𝑅′ = 𝑅1 βˆ₯ 𝑅2 = 9 π‘˜Ξ©
𝑍𝑏 = 𝛽(π‘Ÿπ‘’+𝑅𝐸) = 210(19.64 + 0.68π‘˜) = 146.924 π‘˜Ξ©
𝑍𝑖 = 𝑅′ βˆ₯ 𝑍𝑏 = 8.47 π‘˜Ξ©
π‘π‘œ = 𝑅𝐢 = 2.2 π‘˜Ξ©
𝐴𝑣 =
βˆ’π‘Ήπ‘ͺ
𝒓𝒆+𝑹𝑬
= βˆ’πŸ‘. πŸπŸ’
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 14
Solution (b) (bypassed)
DC analysis (the same as in section (a))
AC analysis
𝑍𝑏 = 𝛽(π‘Ÿπ‘’+𝑅𝐸) = 146.924 π‘˜Ξ©
𝑍𝑖 = 𝑅′ βˆ₯ 𝑍𝑏 = 2.83 π‘˜Ξ©
π‘π‘œ = 𝑅𝐢 βˆ₯ π‘Ÿπ‘œ = 2.2 π‘˜Ξ© βˆ₯ 50 π‘˜Ξ©
𝐴𝑣 =
βˆ’π‘…πΆβˆ₯π‘Ÿπ‘œ
π‘Ÿπ‘’
= βˆ’
2.2 π‘˜π›Ίβˆ₯50 π‘˜π›Ί
19.64
=
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 15
Note
Another variation of an emitter-bias configuration is shown below. For the dc analysis, the emitter
resistance (𝑅𝐸) is (𝑅𝐸1+𝑅𝐸2), whereas for the ac analysis, the resistor (𝑅𝐸)in the equations above is
simply (𝑅𝐸1) with (𝑅𝐸2) bypassed by C.
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 16
Collector Feedback Configuration
The collector feedback network of the figure below employs a feedback path from collector to base to
increase the stability of the system as discussed in (DC analysis). However, the simple maneuver of
connecting a resistor from base to collector rather than base to dc supply has a significant effect on the
level of difficulty encountered when analyzing (ac) the network.
Substituting the equivalent circuit and redrawing the network results in the configuration shown below.
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 17
Collector Feedback Configuration
Input impedance (𝐙𝐒)
𝑍𝑖 =
𝑉𝑖
𝐼𝑖
𝑉𝑖 = πΌπ‘π›½π‘Ÿπ‘’
𝐼𝑖 = 𝐼𝑏 βˆ’ 𝐼′
𝐼′ =
π‘‰π‘œβˆ’π‘‰π‘–
𝑅𝐹
𝑉
π‘œ = βˆ’πΌπ‘œπ‘…πΆ = βˆ’(𝐼′
+ 𝛽𝐼𝑏)𝑅𝐢
𝐼′
=
βˆ’(𝐼′+𝛽𝐼𝑏)π‘…πΆβˆ’πΌπ‘π›½π‘Ÿπ‘’
𝑅𝐹
𝐼′
=
βˆ’πΌβ€²π‘…πΆ
𝑅𝐹
βˆ’
𝛽𝐼𝑏𝑅𝐢
𝑅𝐹
βˆ’
π›½πΌπ‘π‘Ÿπ‘’
𝑅𝐹
By simplifying
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 18
𝐼′
1 +
𝑅𝐢
𝑅𝐹
= βˆ’π›½πΌπ‘
𝑅𝐢 + π‘Ÿπ‘’
𝑅𝐹
𝐼′ = βˆ’π›½πΌπ‘
(𝑅𝐢+π‘Ÿπ‘’)
𝑅𝐢+𝑅𝐹
𝐼𝑖 = 𝐼𝑏 + 𝛽𝐼𝑏
(𝑅𝐢+π‘Ÿπ‘’)
𝑅𝐢+𝑅𝐹
𝐼𝑖 = 𝐼𝑏 1 + 𝛽
𝑅𝐢+π‘Ÿπ‘’
𝑅𝐢+𝑅𝐹
𝑍𝑖 =
πΌπ‘π›½π‘Ÿπ‘’
𝐼𝑏 1+𝛽
𝑅𝐢+π‘Ÿπ‘’
𝑅𝐢+𝑅𝐹
=
π›½π‘Ÿπ‘’
1+𝛽
𝑅𝐢+π‘Ÿπ‘’
𝑅𝐢+𝑅𝐹
Since 𝑅𝐢 ≫≫ π‘Ÿπ‘’
𝑍𝑖 =
π‘Ÿπ‘’
1
𝛽
+
𝑅𝐢
𝑅𝐢+𝑅𝐹
Collector Feedback Configuration
Output impedance (𝐙𝐨)
If (𝑉𝑖) is set to zero as required to define π‘π‘œ, the network will appear as shown below. The effect of (π›½π‘Ÿπ‘’) is
removed, and (𝑅𝐹) appears in parallel with (𝑅𝐢) and :-
Zπ‘œ = 𝑅𝐹 βˆ•βˆ• 𝑅𝐢
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 19
Collector Feedback Configuration
Voltage gain (𝑨𝒗)
𝐴𝑣 =
π‘‰π‘œ
𝑉𝑖
𝑉𝑖 = πΌπ‘π›½π‘Ÿπ‘’
𝑉
π‘œ = βˆ’πΌπ‘œπ‘…πΆ = βˆ’(𝐼′ + 𝛽𝐼𝑏)𝑅𝐢
𝑉
π‘œ = βˆ’(βˆ’π›½πΌπ‘
(𝑅𝐢+π‘Ÿπ‘’)
𝑅𝐢+𝑅𝐹
+ 𝛽𝐼𝑏)𝑅𝐢
𝑉
π‘œ = βˆ’π›½πΌπ‘(1 βˆ’
𝑅𝐢+π‘Ÿπ‘’
𝑅𝐢+𝑅𝐹
)𝑅𝐢
𝐴𝑣 =
βˆ’π›½πΌπ‘(1βˆ’
𝑅𝐢+π‘Ÿπ‘’
𝑅𝐢+𝑅𝐹
)𝑅𝐢
πΌπ‘π›½π‘Ÿπ‘’
𝐴𝑣 = βˆ’ 1 βˆ’
𝑅𝐢+π‘Ÿπ‘’
𝑅𝐢+𝑅𝐹
𝑅𝐢
π‘Ÿπ‘’
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 20
Since 𝑅𝐢 ≫≫ π‘Ÿπ‘’
𝐴𝑣 = βˆ’ 1 βˆ’
𝑅𝐢
𝑅𝐢+𝑅𝐹
𝑅𝐢
π‘Ÿπ‘’
𝐴𝑣 = βˆ’
𝑅𝐹
𝑅𝐢+𝑅𝐹
𝑅𝐢
π‘Ÿπ‘’
the negative sign indicates a 180Β° phase shift
between 𝑉
π‘œ and 𝑉𝑖.
Collector Feedback Configuration with 𝑅𝐸
For the configuration of the figure shown below, the following equations are use to determine the variables
of interest.
Input impedance (π™π’Š)
𝑍𝑖 =
𝑅𝐸
1
𝛽
+
𝑅𝐢+𝑅𝐸
𝑅𝐹
Output impedance (𝐙𝐨)
Zπ‘œ = 𝑅C βˆ•βˆ• 𝑅𝐹
Voltage gain (𝑨𝒗)
𝑨𝒗 = βˆ’
𝑅𝐢
𝑅𝐸
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 21
Common-Base Configuration
The common-base configuration is characterized as having a relatively low input and a high output impedance and a
current gain less than 1. The voltage gain, however, can be quite large. The standard configuration appears in Figure
bellow, with the common-base 𝒓𝒆 equivalent model substituted.
input impedance π’π’Š
𝑍𝑖 = 𝑅𝐸 βˆ₯ π‘Ÿπ‘’
Output impedance 𝒁𝒐
π‘π‘œ = 𝑅𝐢
Voltage gain 𝑨𝒗
𝑉𝑖 = πΌπ‘’π‘Ÿπ‘’
𝑉
π‘œ = βˆ’πΌπ‘œπ‘…πΆ = 𝛼𝐼𝑒𝑅𝐢
𝐴𝑣 =
π‘‰π‘œ
𝑉𝑖
=
𝛼𝐼𝑒𝑅𝐢
πΌπ‘’π‘Ÿπ‘’
𝐴𝑣 =
𝛼𝑅𝐢
π‘Ÿπ‘’
β‰…
𝑅𝐢
π‘Ÿπ‘’
(for 𝛼 = 1)
Current gain π‘¨π’Š
𝐴i =
Iπ‘œ
I𝑖
= βˆ’Ξ± = βˆ’1
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 22
EXAMPLE 5
For the network shown in the Figure, determine:- re, Zi, Zo, Avand Ai.
solution
𝐼𝐸 =
π‘‰πΈπΈβˆ’π‘‰π΅πΈ
𝑅𝐸
= 1.3 π‘šπ΄
π‘Ÿπ‘’ =
26 π‘šπ‘‰
𝐼𝐸
=
26 π‘šπ‘‰
1.3 π‘šπ΄
= 20 Ξ©
𝑍𝑖 = 𝑅𝐸 βˆ₯ π‘Ÿπ‘’ = 19.61 Ξ©
π‘π‘œ = 𝑅𝐢 = 5 kΞ©
𝐴𝑣 =
π‘‰π‘œ
𝑉𝑖
=
𝛼𝑅𝐢
π‘Ÿπ‘’
= 245
𝐴i = βˆ’Ξ± = βˆ’0.98
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 23
Common Collector (Emitter-Follower) Configuration
When the output is taken from the emitter terminal of the transistor as shown in Figure, the
network is referred to as an emitter-follower. The output voltage is always slightly less than the
input signal due to the drop from base to emitter, but the approximation Av = 1 is usually a good
one. Unlike the collector voltage, the emitter voltage is in phase with the signal Vi. That is, both
Vo and Vi attain their positive and negative peak values at the same time. The fact that Vo
β€œfollows” the magnitude of Vi with an in-phase relationship accounts for the terminology emitter-
follower.
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 24
Substituting the π‘Ÿπ‘’ equivalent circuit into the network of figure above results the network of figure below.
The input impedance is determined in the same manner as described earlier in this lecture.
input impedance π’π’Š
𝑍𝑖 = 𝑅𝐡 βˆ₯ 𝑍𝑏
𝑍𝑏 β‰… 𝛽(π‘Ÿπ‘’+𝑅𝐸)
output impedance 𝒁𝒐
Ib =
𝑉i
Zb
𝐼𝑒 = 𝛽 + 1 𝐼𝑏 β‡’β‡’β‡’ 𝐼𝑒 = 𝛽 + 1
𝑉i
Zb
Substituting for Zb gives; - 𝐼𝑒 =
𝛽+1 𝑉i
𝛽 (π‘Ÿπ‘’+𝑅𝐸)
Solving for 𝛽 + 1 β‰… 𝛽 and set the input voltage to zero
𝐼𝑒 =
𝛽+1 𝑉i
𝛽 (π‘Ÿπ‘’+𝑅𝐸)
=
𝑉𝑖
π‘Ÿπ‘’+𝑅𝐸
𝑍o = 𝑅𝐸 βˆ₯ π‘Ÿπ‘’
𝑍o β‰… π‘Ÿπ‘’ for 𝑅𝐸 ≫ π‘Ÿπ‘’
Voltage gain 𝑨𝒗
Av =
𝑉o
𝑉i
=
RE
RE+re
Av =
𝑉o
𝑉i
β‰… 1 for (𝑅𝐸 ≫ π‘Ÿπ‘’)
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 25
Effect of 𝑅𝐿 and 𝑅𝑆
All the parameters determined before have been for an unloaded amplifier with the input
voltage connected directly to a terminal of the transistor. Now the effect of applying a load to the
output terminal and the effect of using a source with an internal resistance will be investigated.
As shown in the network below.
𝐴𝑣NL =
π‘‰π‘œ
𝑉𝑖
𝐴𝑣L =
π‘‰π‘œ
𝑉𝑖
𝐴𝑣s =
π‘‰π‘œ
𝑉s
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 26
The loaded voltage gain of an amplifier is always less than the no-load gain.
In other words, the addition of a load resistor 𝑅𝐿 to the configuration will always have the effect of
reducing the gain below the no-load level.
The gain obtained with a source resistance in place will always be less than that obtained under loaded
or unloaded conditions due to the drop in applied voltage across the source resistance.
In total, therefore, the highest gain is obtained under no-load conditions and the lowest gain with a source
impedance and load in place. That is:
For the same configuration 𝐴𝑣𝑁𝐿 > 𝐴𝑣𝐿 > 𝐴𝑣𝑠
For a particular design, the larger the level of (𝑅𝐿), the greater is the level of ac gain.
In other words, the larger the load resistance, the closer it is to an open-circuit approximation that would
result in the higher no-load gain.
In addition:
For a particular amplifier, the smaller the internal resistance of the signal source, the greater is the
overall gain.
In other words, the closer the source resistance is to a short-circuit approximation, the
greater is the gain because the effect of R s will essentially be eliminated.
For any network that have coupling capacitors, the source and load resistance do not affect the dc
biasing levels.
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 27
For Common Emitter Configuration
𝑍𝑖 = 𝑅B βˆ₯ Ξ²π‘Ÿπ‘’ 𝐴𝑣NL =
π‘‰π‘œ
𝑉𝑖
=
βˆ’π‘…πΆβˆ₯π‘Ÿo
re
𝑍o = 𝑅C βˆ₯ π‘Ÿo 𝐴𝑣L =
π‘‰π‘œ
𝑉𝑖
=
βˆ’π‘…πΆβˆ₯RLβˆ₯π‘Ÿo
re
π‘π‘œ
β€²
= 𝑅C βˆ₯ π‘Ÿo βˆ₯ RL 𝐴𝑣s =
π‘‰π‘œ
𝑉s
=
π‘‰π‘œ
𝑉i
Γ—
𝑉i
𝑉s
= 𝐴𝑣L Γ—
Zi
Zi+Rs
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 28
For (emitter-follower) Common Collector Configuration
𝑍𝑖 = 𝑅𝐡 βˆ₯ 𝑍𝑏
𝑍𝑏 β‰… 𝛽 [π‘Ÿπ‘’ + (𝑅𝐸 βˆ₯ RL)]
𝑍o = 𝑅𝐸 βˆ₯ π‘Ÿπ‘’
π‘π‘œ
β€²
= 𝑅𝐸 βˆ₯ RL βˆ₯ π‘Ÿπ‘’
AvNL =
RE
RE+re
AvL =
REβˆ₯RL
(REβˆ₯RL)+re
𝐴𝑣s =
π‘‰π‘œ
𝑉s
=
π‘‰π‘œ
𝑉i
Γ—
𝑉i
𝑉s
= 𝐴𝑣L Γ—
Zi
Zi+Rs
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 29

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Transistor AC modeling circuit analysis

  • 1. AC model is an equivalent circuit that represents the AC characteristics of the transistor. It is a combination of circuit elements, properly chosen, that best approximates the actual behavior of a semiconductor device under specific operating conditions. To analyze the working of a transistor in amplifier circuits, it beneficial to represent the devices in the form of model circuits. The model circuit of transistor uses many interior parameters of transistor to define the operation. There are two models commonly used in the small-signal ac analysis of transistor networks: 1. π‘Ÿπ‘’ equivalent (dynamic resistance) model. 2. hybrid equivalent (h-parameter) model. The Parameters 𝑍𝑖 , π‘π‘œ, 𝐴𝑣, and 𝐴𝑖 are the most important parameters for the analysis of the AC characteristics of a transistor circuit. University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed Transistor AC Modeling 1
  • 2. Important procedures for ac analysis (small signal analysis) 1. Setting all dc sources to zero and replacing them by a short-circuit equivalent 2. Replacing all capacitors by a short-circuit equivalent 3. Removing all elements bypassed by the short-circuit equivalents introduced by steps 1 and 2 4. Redrawing the network in a more convenient and logical form. 5. Defining the important parameters of the transistor model. University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed Transistor AC Modeling 2
  • 3. University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 3
  • 4. Common-Emitter Configuration The equivalent circuit for the common-emitter configuration will be constructed using the device characteristics and a number of approximations. Starting with the input side, we find the applied voltage π‘½π’Š is equal to the voltage 𝑽𝒃𝒆 (0.7) with the input current being the base current 𝑰𝒃. If we redraw the collector characteristics to have a constant 𝜷 (another approximation), the entire characteristics at the output section can be replaced by a current controlled source whose magnitude is beta times the base current. Because all the input and output parameters of the original configuration are now present, the equivalent network for the common-emitter configuration has been established. The equivalent model can be improved by first replacing the diode by its equivalent resistance 𝒓𝒅 = πŸπŸ”π’Žπ‘½ 𝑰𝑫 . Using the subscript e because the determining current is the emitter current will result in 𝒓𝒆 = πŸπŸ”π’Žπ‘½ 𝑰𝑬 𝑍𝑖 = 𝑉𝑖 𝐼𝑏 = 𝑉𝑏𝑒 𝐼𝑏 𝑉𝑏𝑒 = πΌπ‘’π‘Ÿπ‘’ = 𝐼𝑐 + 𝐼𝑏 π‘Ÿπ‘’ 𝑉𝑏𝑒 = 𝛽𝐼𝑏 + 𝐼𝑏 π‘Ÿπ‘’ = 𝛽 + 1 πΌπ‘π‘Ÿπ‘’ 𝑍𝑖 = 𝑉𝑏𝑒 𝐼𝑏 = 𝛽+1 πΌπ‘π‘Ÿπ‘’ 𝐼𝑏 University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed The 𝒓𝒆Transistor Model 4
  • 5. The result is that the impedance seen β€œlooking into” the base of the network is a resistor equal to beta times the value of 𝒓𝒆. The collector output current is still linked to the input current by beta as shown in the same figure. The output impedance 𝒓𝒐 can be calculated and it is appear as a resistor in parallel with the output as shown in the equivalent circuit. For the common-emitter configuration there is a 180 Β° phase shift. University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 5
  • 6. Common-Base Configuration The common-base equivalent circuit will be developed in much the same manner as applied to the common-emitter configuration. For the ac response, the diode can be replaced by its equivalent ac resistance determined by The network of is an excellent equivalent circuit for the analysis of most common-base configurations. It is similar in many ways to that of the common-emitter configuration. In general, common-base configurations have very low input impedance because it is essentially simply 𝒓𝒆. Typical values extend from a few ohms to perhaps 50Ξ©. The output impedance π‘Ÿπ‘œ will typically extend into the mega ohm range. Because the output current is opposite to the defined πΌπ‘œ direction, you will find in the analysis to follow that there is no phase shift between the input and output voltages. University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 6
  • 7. Common Emitter, Fixed Bias Configuration Circuit analysis Input impedance (π’π’Š) π’π’Š = 𝑹𝑩 βˆ–βˆ– 𝛃𝒓𝒆 (For 𝑹𝑩 larger than 10 πœ·π’“π’†) 𝑍𝑖 β‰… π›½π‘Ÿπ‘’ Output impedance (𝒁𝒐) 𝒁𝒐 = 𝑹π‘ͺ βˆ–βˆ– 𝒓𝒐 (For 𝒓𝒐 larger than 10𝑹π‘ͺ) 𝑍o β‰… 𝑅C Voltage gain (𝑨𝑽) 𝐴𝑣 = π‘‰π‘œ 𝑉𝑖 𝑉 π‘œ = βˆ’π›½πΌπ‘ 𝑅𝐢 βˆ–βˆ– π‘Ÿπ‘œ 𝑉𝑖 = πΌπ‘π›½π‘Ÿπ‘’ 𝐴𝑣 = π‘‰π‘œ 𝑉𝑖 = βˆ’π›½πΌπ‘ π‘…πΆβˆ–βˆ–π‘Ÿπ‘œ π›½πΌπ‘π‘Ÿπ‘’ If 𝒓𝒐 ≫ πŸπŸŽπ‘Ήπ‘ͺ, so that the effect of π‘Ÿπ‘œ can be ignored, University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 7
  • 8. EXAMPLE 1 For the network shown in the Figure determine: a) Determine π‘Ÿπ‘’. b) Determine 𝑍𝑖, π‘π‘œ and 𝐴𝑣 (with π‘Ÿπ‘œ = ∞). c) Repeat parts (b) including (π‘Ÿπ‘œ = 50 π‘˜Ξ©). Solution: a) 𝐼𝐡 = π‘‰πΆπΆβˆ’π‘‰π΅πΈ 𝑅𝐡 = 12 π‘‰βˆ’0.7 𝑉 470 π‘˜Ξ© = 24.04 πœ‡π΄ 𝐼𝐸 = 𝛽 + 1 𝐼𝐡 = 100 + 1 24.04π‘šπ΄ = 2.428π‘šπ΄ π‘Ÿπ‘’ = 26 π‘šπ‘‰ 𝐼𝑒 = 26π‘šπ‘‰ 2.428 π‘šπ΄ = 10.71 Ξ© b) 𝑍𝑖 = 𝑅𝐡 βˆ–βˆ– π›½π‘Ÿπ‘’ = 1.07 π‘˜Ξ© 𝑍o = 𝑅C βˆ–βˆ– π‘Ÿo = 3π‘˜Ξ© βˆ–βˆ– ∞ = 𝑅C = 3 π‘˜Ξ© 𝐴𝑣 = βˆ’ π‘…πΆβˆ–βˆ–π‘Ÿπ‘œ π‘Ÿπ‘’ = βˆ’π‘…πΆ π‘Ÿπ‘’ = βˆ’3 π‘˜Ξ© 10.7 Ξ© = βˆ’280.1 c) 𝑍o = 𝑅C βˆ–βˆ– π‘Ÿo = 3π‘˜Ξ© βˆ–βˆ– 50π‘˜Ξ© = 2.83 π‘˜Ξ© 𝐴𝑣 = βˆ’ π‘…πΆβˆ–βˆ–π‘Ÿπ‘œ π‘Ÿπ‘’ = βˆ’3 π‘˜Ξ©βˆ–βˆ–50 π‘˜Ξ© 10.7 Ξ© = βˆ’264.24 University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 8
  • 9. Common Emitter, Voltage Divider Bias Configuration π‘ΉπŸ and π‘ΉπŸ remain part of the input circuit, whereas 𝑅𝐢 is part of the output circuit. The parallel combination of 𝑅1 and 𝑅2 is defined by 𝑹′ = π‘ΉπŸ βˆ₯ π‘ΉπŸ. Input impedance (π’π’Š) For large 𝑅𝐡 (larger than 10 π›½π‘Ÿπ‘’) 𝑍𝑖 β‰… π›½π‘Ÿπ‘’ Output impedance (𝒁𝒐) For π‘Ÿo larger than 10RC) 𝑍o β‰… 𝑅C Voltage gain (𝑨𝑽) Electrical Engineering Dept / Year Two / Semester I / Electronic I / Dr. Ahmed M. Mohammed 9
  • 10. EXAMPLE 2 For the network shown in the Figure determine: a) Determine π‘Ÿπ‘’. b) Determine 𝑍𝑖, π‘π‘œ and 𝐴𝑣 (with π‘Ÿπ‘œ = ∞). c) Repeat parts (b) including (π‘Ÿπ‘œ = 50 π‘˜Ξ©). Solution a) 𝑉𝐡 = 𝑉𝐢𝐢 . 𝑅2 𝑅1+𝑅2 = 22 8.2π‘˜Ξ© 56+8.2 π‘˜Ξ© = 2.81 𝑉 𝑉𝐸 = 𝑉𝐡 βˆ’ 𝑉𝐡𝐸 = 2.81 βˆ’ 0.7 = 2.11 𝑉 𝐼𝐸 = 𝑉𝐸 𝑅𝐸 = 2.11 𝑉 1.5 π‘˜Ξ© = 1.41 π‘šπ΄ π‘Ÿπ‘’ = 26π‘šπ‘‰ 1.41 π‘šπ΄ = 18.44 Ξ© b) 𝑅′ = 𝑅1 βˆ₯ 𝑅2 = 7.15 π‘˜Ξ© 𝑍𝑖 = 𝑅′ βˆ–βˆ– π›½π‘Ÿπ‘’ = 1.35 π‘˜Ξ© 𝑍o = 𝑅C βˆ–βˆ– π‘Ÿo = 𝑅C = 6.8 π‘˜Ξ© 𝐴𝑣 = βˆ’ π‘…πΆβˆ–βˆ–π‘Ÿπ‘œ π‘Ÿπ‘’ = βˆ’π‘…πΆ π‘Ÿπ‘’ = βˆ’6.8 π‘˜Ξ© 18.44 Ξ© = βˆ’368.76 c) ??? University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 10
  • 11. CE Emitter-Base Configuration with 𝑅𝐸 (Unbypassed circuit analysis) Applying Kirchhoff’s voltage law to the input side 𝑉𝑖 = πΌπ‘π›½π‘Ÿπ‘’ + 𝐼𝑒𝑅𝐸 𝑉𝑖 = πΌπ‘π›½π‘Ÿπ‘’ + (𝛽 + 1)𝐼𝑏𝑅𝐸 the input impedance looking into the network to the right of 𝑅𝐡is:- 𝑍𝑏 = 𝑉𝑖 𝐼𝑖 = 𝐼𝑏[π›½π‘Ÿπ‘’+ 𝛽+1 𝑅𝐸] 𝐼𝑏 = π›½π‘Ÿπ‘’ + 𝛽 + 1 𝑅𝐸 for for University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 11
  • 12. Unbypassed circuit analysis Input impedance (𝐙𝐒). π’π’Š = 𝑹𝑩 βˆ₯ 𝒁𝒃 Output impedance (𝐙𝐨) 𝒁𝒐 = 𝑹π‘ͺ Voltage gain (𝑨𝒗) 𝑉𝑖 = 𝐼𝑏𝑍𝑏 𝑉 π‘œ = βˆ’πΌπ‘œπ‘…πΆ = βˆ’π›½πΌπ‘π‘…πΆ 𝐴𝑣 = π‘‰π‘œ 𝑉𝑖 = βˆ’π›½πΌπ‘π‘…πΆ 𝐼𝑏𝑍𝑏 = βˆ’π›½π‘…πΆ 𝑍𝑏 𝐴𝑣 = βˆ’π›½π‘…πΆ 𝛽(π‘Ÿπ‘’+𝑅𝐸) = βˆ’π‘Ήπ‘ͺ 𝒓𝒆+𝑹𝑬 𝐴𝑣 β‰… βˆ’π‘Ήπ‘ͺ 𝑹𝑬 for University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 12
  • 13. EXAMPLE 3 For the network, determine: (a) re, Zi, Zo, and Av without CE (unbypassed), (b) Repeat the analysis with CEin place (bypassed). solution a) 𝐼𝐡 = π‘‰πΆπΆβˆ’π‘‰π΅πΈ 𝑅𝐡+(𝛽+1)𝑅𝐸 = 20βˆ’0.7 470 π‘˜Ξ©+121(0.56π‘˜Ξ©) = 35.89 πœ‡ 𝐴 𝐼𝐸 = 𝛽 + 1 𝐼𝐡 = 4.34 π‘šπ΄ π‘Ÿπ‘’ = 26 π‘šπ‘‰ 𝐼𝐸 = 5.99 Ξ© 𝑍𝑏 = 𝛽 π‘Ÿπ‘’ + 𝑅𝐸 = 67.92 π‘˜Ξ© 𝑍𝑖 = 𝑅𝐡 βˆ₯ 𝑍𝑏 = 59.34 π‘˜Ξ© π‘π‘œ = 𝑅𝐢 = 2.2 π‘˜Ξ© 𝐴𝑣 = π‘‰π‘œ 𝑉𝑖 = βˆ’π›½π‘…πΆ 𝑍𝑏 = βˆ’3.89 b) 𝑍𝑏 = π›½π‘Ÿπ‘’ 𝑍𝑖 = 𝑅𝐡 βˆ₯ 𝑍𝑏 = 𝑅𝐡 βˆ₯ π›½π‘Ÿπ‘’ = 717.7Ξ© π‘π‘œ = 𝑅𝐢 = 2.2 π‘˜Ξ© 𝐴𝑣 = π‘‰π‘œ 𝑉𝑖 = βˆ’π‘…πΆ π‘Ÿπ‘’ = βˆ’367.28 University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 13
  • 14. EXAMPLE 4 For the network of Figure, with CE unconnected (Unbypassed), determine: a) re, Zi, Zo, and Av. b) Repeat the analysis with CE in place (bypassed). Solution (a) (Unbypassed) DC analysis: - 𝑉𝐡 = 𝑉𝐢𝐢 . 𝑅2 𝑅1+𝑅2 = 1.6 𝑉 𝑉𝐸 = 𝑉𝐡 βˆ’ 𝑉𝐡𝐸 = 0.9 𝑉 𝐼𝐸 = 𝑉𝐸 𝑅𝐸 = 1.324 π‘šπ΄ π‘Ÿπ‘’ = 26 π‘šπ‘‰ 𝐼𝐸 = 19.64 Ξ© AC analysis 𝑅′ = 𝑅1 βˆ₯ 𝑅2 = 9 π‘˜Ξ© 𝑍𝑏 = 𝛽(π‘Ÿπ‘’+𝑅𝐸) = 210(19.64 + 0.68π‘˜) = 146.924 π‘˜Ξ© 𝑍𝑖 = 𝑅′ βˆ₯ 𝑍𝑏 = 8.47 π‘˜Ξ© π‘π‘œ = 𝑅𝐢 = 2.2 π‘˜Ξ© 𝐴𝑣 = βˆ’π‘Ήπ‘ͺ 𝒓𝒆+𝑹𝑬 = βˆ’πŸ‘. πŸπŸ’ University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 14
  • 15. Solution (b) (bypassed) DC analysis (the same as in section (a)) AC analysis 𝑍𝑏 = 𝛽(π‘Ÿπ‘’+𝑅𝐸) = 146.924 π‘˜Ξ© 𝑍𝑖 = 𝑅′ βˆ₯ 𝑍𝑏 = 2.83 π‘˜Ξ© π‘π‘œ = 𝑅𝐢 βˆ₯ π‘Ÿπ‘œ = 2.2 π‘˜Ξ© βˆ₯ 50 π‘˜Ξ© 𝐴𝑣 = βˆ’π‘…πΆβˆ₯π‘Ÿπ‘œ π‘Ÿπ‘’ = βˆ’ 2.2 π‘˜π›Ίβˆ₯50 π‘˜π›Ί 19.64 = University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 15
  • 16. Note Another variation of an emitter-bias configuration is shown below. For the dc analysis, the emitter resistance (𝑅𝐸) is (𝑅𝐸1+𝑅𝐸2), whereas for the ac analysis, the resistor (𝑅𝐸)in the equations above is simply (𝑅𝐸1) with (𝑅𝐸2) bypassed by C. University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 16
  • 17. Collector Feedback Configuration The collector feedback network of the figure below employs a feedback path from collector to base to increase the stability of the system as discussed in (DC analysis). However, the simple maneuver of connecting a resistor from base to collector rather than base to dc supply has a significant effect on the level of difficulty encountered when analyzing (ac) the network. Substituting the equivalent circuit and redrawing the network results in the configuration shown below. University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 17
  • 18. Collector Feedback Configuration Input impedance (𝐙𝐒) 𝑍𝑖 = 𝑉𝑖 𝐼𝑖 𝑉𝑖 = πΌπ‘π›½π‘Ÿπ‘’ 𝐼𝑖 = 𝐼𝑏 βˆ’ 𝐼′ 𝐼′ = π‘‰π‘œβˆ’π‘‰π‘– 𝑅𝐹 𝑉 π‘œ = βˆ’πΌπ‘œπ‘…πΆ = βˆ’(𝐼′ + 𝛽𝐼𝑏)𝑅𝐢 𝐼′ = βˆ’(𝐼′+𝛽𝐼𝑏)π‘…πΆβˆ’πΌπ‘π›½π‘Ÿπ‘’ 𝑅𝐹 𝐼′ = βˆ’πΌβ€²π‘…πΆ 𝑅𝐹 βˆ’ 𝛽𝐼𝑏𝑅𝐢 𝑅𝐹 βˆ’ π›½πΌπ‘π‘Ÿπ‘’ 𝑅𝐹 By simplifying University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 18 𝐼′ 1 + 𝑅𝐢 𝑅𝐹 = βˆ’π›½πΌπ‘ 𝑅𝐢 + π‘Ÿπ‘’ 𝑅𝐹 𝐼′ = βˆ’π›½πΌπ‘ (𝑅𝐢+π‘Ÿπ‘’) 𝑅𝐢+𝑅𝐹 𝐼𝑖 = 𝐼𝑏 + 𝛽𝐼𝑏 (𝑅𝐢+π‘Ÿπ‘’) 𝑅𝐢+𝑅𝐹 𝐼𝑖 = 𝐼𝑏 1 + 𝛽 𝑅𝐢+π‘Ÿπ‘’ 𝑅𝐢+𝑅𝐹 𝑍𝑖 = πΌπ‘π›½π‘Ÿπ‘’ 𝐼𝑏 1+𝛽 𝑅𝐢+π‘Ÿπ‘’ 𝑅𝐢+𝑅𝐹 = π›½π‘Ÿπ‘’ 1+𝛽 𝑅𝐢+π‘Ÿπ‘’ 𝑅𝐢+𝑅𝐹 Since 𝑅𝐢 ≫≫ π‘Ÿπ‘’ 𝑍𝑖 = π‘Ÿπ‘’ 1 𝛽 + 𝑅𝐢 𝑅𝐢+𝑅𝐹
  • 19. Collector Feedback Configuration Output impedance (𝐙𝐨) If (𝑉𝑖) is set to zero as required to define π‘π‘œ, the network will appear as shown below. The effect of (π›½π‘Ÿπ‘’) is removed, and (𝑅𝐹) appears in parallel with (𝑅𝐢) and :- Zπ‘œ = 𝑅𝐹 βˆ•βˆ• 𝑅𝐢 University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 19
  • 20. Collector Feedback Configuration Voltage gain (𝑨𝒗) 𝐴𝑣 = π‘‰π‘œ 𝑉𝑖 𝑉𝑖 = πΌπ‘π›½π‘Ÿπ‘’ 𝑉 π‘œ = βˆ’πΌπ‘œπ‘…πΆ = βˆ’(𝐼′ + 𝛽𝐼𝑏)𝑅𝐢 𝑉 π‘œ = βˆ’(βˆ’π›½πΌπ‘ (𝑅𝐢+π‘Ÿπ‘’) 𝑅𝐢+𝑅𝐹 + 𝛽𝐼𝑏)𝑅𝐢 𝑉 π‘œ = βˆ’π›½πΌπ‘(1 βˆ’ 𝑅𝐢+π‘Ÿπ‘’ 𝑅𝐢+𝑅𝐹 )𝑅𝐢 𝐴𝑣 = βˆ’π›½πΌπ‘(1βˆ’ 𝑅𝐢+π‘Ÿπ‘’ 𝑅𝐢+𝑅𝐹 )𝑅𝐢 πΌπ‘π›½π‘Ÿπ‘’ 𝐴𝑣 = βˆ’ 1 βˆ’ 𝑅𝐢+π‘Ÿπ‘’ 𝑅𝐢+𝑅𝐹 𝑅𝐢 π‘Ÿπ‘’ University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 20 Since 𝑅𝐢 ≫≫ π‘Ÿπ‘’ 𝐴𝑣 = βˆ’ 1 βˆ’ 𝑅𝐢 𝑅𝐢+𝑅𝐹 𝑅𝐢 π‘Ÿπ‘’ 𝐴𝑣 = βˆ’ 𝑅𝐹 𝑅𝐢+𝑅𝐹 𝑅𝐢 π‘Ÿπ‘’ the negative sign indicates a 180Β° phase shift between 𝑉 π‘œ and 𝑉𝑖.
  • 21. Collector Feedback Configuration with 𝑅𝐸 For the configuration of the figure shown below, the following equations are use to determine the variables of interest. Input impedance (π™π’Š) 𝑍𝑖 = 𝑅𝐸 1 𝛽 + 𝑅𝐢+𝑅𝐸 𝑅𝐹 Output impedance (𝐙𝐨) Zπ‘œ = 𝑅C βˆ•βˆ• 𝑅𝐹 Voltage gain (𝑨𝒗) 𝑨𝒗 = βˆ’ 𝑅𝐢 𝑅𝐸 University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 21
  • 22. Common-Base Configuration The common-base configuration is characterized as having a relatively low input and a high output impedance and a current gain less than 1. The voltage gain, however, can be quite large. The standard configuration appears in Figure bellow, with the common-base 𝒓𝒆 equivalent model substituted. input impedance π’π’Š 𝑍𝑖 = 𝑅𝐸 βˆ₯ π‘Ÿπ‘’ Output impedance 𝒁𝒐 π‘π‘œ = 𝑅𝐢 Voltage gain 𝑨𝒗 𝑉𝑖 = πΌπ‘’π‘Ÿπ‘’ 𝑉 π‘œ = βˆ’πΌπ‘œπ‘…πΆ = 𝛼𝐼𝑒𝑅𝐢 𝐴𝑣 = π‘‰π‘œ 𝑉𝑖 = 𝛼𝐼𝑒𝑅𝐢 πΌπ‘’π‘Ÿπ‘’ 𝐴𝑣 = 𝛼𝑅𝐢 π‘Ÿπ‘’ β‰… 𝑅𝐢 π‘Ÿπ‘’ (for 𝛼 = 1) Current gain π‘¨π’Š 𝐴i = Iπ‘œ I𝑖 = βˆ’Ξ± = βˆ’1 University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 22
  • 23. EXAMPLE 5 For the network shown in the Figure, determine:- re, Zi, Zo, Avand Ai. solution 𝐼𝐸 = π‘‰πΈπΈβˆ’π‘‰π΅πΈ 𝑅𝐸 = 1.3 π‘šπ΄ π‘Ÿπ‘’ = 26 π‘šπ‘‰ 𝐼𝐸 = 26 π‘šπ‘‰ 1.3 π‘šπ΄ = 20 Ξ© 𝑍𝑖 = 𝑅𝐸 βˆ₯ π‘Ÿπ‘’ = 19.61 Ξ© π‘π‘œ = 𝑅𝐢 = 5 kΞ© 𝐴𝑣 = π‘‰π‘œ 𝑉𝑖 = 𝛼𝑅𝐢 π‘Ÿπ‘’ = 245 𝐴i = βˆ’Ξ± = βˆ’0.98 University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 23
  • 24. Common Collector (Emitter-Follower) Configuration When the output is taken from the emitter terminal of the transistor as shown in Figure, the network is referred to as an emitter-follower. The output voltage is always slightly less than the input signal due to the drop from base to emitter, but the approximation Av = 1 is usually a good one. Unlike the collector voltage, the emitter voltage is in phase with the signal Vi. That is, both Vo and Vi attain their positive and negative peak values at the same time. The fact that Vo β€œfollows” the magnitude of Vi with an in-phase relationship accounts for the terminology emitter- follower. University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 24
  • 25. Substituting the π‘Ÿπ‘’ equivalent circuit into the network of figure above results the network of figure below. The input impedance is determined in the same manner as described earlier in this lecture. input impedance π’π’Š 𝑍𝑖 = 𝑅𝐡 βˆ₯ 𝑍𝑏 𝑍𝑏 β‰… 𝛽(π‘Ÿπ‘’+𝑅𝐸) output impedance 𝒁𝒐 Ib = 𝑉i Zb 𝐼𝑒 = 𝛽 + 1 𝐼𝑏 β‡’β‡’β‡’ 𝐼𝑒 = 𝛽 + 1 𝑉i Zb Substituting for Zb gives; - 𝐼𝑒 = 𝛽+1 𝑉i 𝛽 (π‘Ÿπ‘’+𝑅𝐸) Solving for 𝛽 + 1 β‰… 𝛽 and set the input voltage to zero 𝐼𝑒 = 𝛽+1 𝑉i 𝛽 (π‘Ÿπ‘’+𝑅𝐸) = 𝑉𝑖 π‘Ÿπ‘’+𝑅𝐸 𝑍o = 𝑅𝐸 βˆ₯ π‘Ÿπ‘’ 𝑍o β‰… π‘Ÿπ‘’ for 𝑅𝐸 ≫ π‘Ÿπ‘’ Voltage gain 𝑨𝒗 Av = 𝑉o 𝑉i = RE RE+re Av = 𝑉o 𝑉i β‰… 1 for (𝑅𝐸 ≫ π‘Ÿπ‘’) University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 25
  • 26. Effect of 𝑅𝐿 and 𝑅𝑆 All the parameters determined before have been for an unloaded amplifier with the input voltage connected directly to a terminal of the transistor. Now the effect of applying a load to the output terminal and the effect of using a source with an internal resistance will be investigated. As shown in the network below. 𝐴𝑣NL = π‘‰π‘œ 𝑉𝑖 𝐴𝑣L = π‘‰π‘œ 𝑉𝑖 𝐴𝑣s = π‘‰π‘œ 𝑉s University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 26
  • 27. The loaded voltage gain of an amplifier is always less than the no-load gain. In other words, the addition of a load resistor 𝑅𝐿 to the configuration will always have the effect of reducing the gain below the no-load level. The gain obtained with a source resistance in place will always be less than that obtained under loaded or unloaded conditions due to the drop in applied voltage across the source resistance. In total, therefore, the highest gain is obtained under no-load conditions and the lowest gain with a source impedance and load in place. That is: For the same configuration 𝐴𝑣𝑁𝐿 > 𝐴𝑣𝐿 > 𝐴𝑣𝑠 For a particular design, the larger the level of (𝑅𝐿), the greater is the level of ac gain. In other words, the larger the load resistance, the closer it is to an open-circuit approximation that would result in the higher no-load gain. In addition: For a particular amplifier, the smaller the internal resistance of the signal source, the greater is the overall gain. In other words, the closer the source resistance is to a short-circuit approximation, the greater is the gain because the effect of R s will essentially be eliminated. For any network that have coupling capacitors, the source and load resistance do not affect the dc biasing levels. University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 27
  • 28. For Common Emitter Configuration 𝑍𝑖 = 𝑅B βˆ₯ Ξ²π‘Ÿπ‘’ 𝐴𝑣NL = π‘‰π‘œ 𝑉𝑖 = βˆ’π‘…πΆβˆ₯π‘Ÿo re 𝑍o = 𝑅C βˆ₯ π‘Ÿo 𝐴𝑣L = π‘‰π‘œ 𝑉𝑖 = βˆ’π‘…πΆβˆ₯RLβˆ₯π‘Ÿo re π‘π‘œ β€² = 𝑅C βˆ₯ π‘Ÿo βˆ₯ RL 𝐴𝑣s = π‘‰π‘œ 𝑉s = π‘‰π‘œ 𝑉i Γ— 𝑉i 𝑉s = 𝐴𝑣L Γ— Zi Zi+Rs University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 28
  • 29. For (emitter-follower) Common Collector Configuration 𝑍𝑖 = 𝑅𝐡 βˆ₯ 𝑍𝑏 𝑍𝑏 β‰… 𝛽 [π‘Ÿπ‘’ + (𝑅𝐸 βˆ₯ RL)] 𝑍o = 𝑅𝐸 βˆ₯ π‘Ÿπ‘’ π‘π‘œ β€² = 𝑅𝐸 βˆ₯ RL βˆ₯ π‘Ÿπ‘’ AvNL = RE RE+re AvL = REβˆ₯RL (REβˆ₯RL)+re 𝐴𝑣s = π‘‰π‘œ 𝑉s = π‘‰π‘œ 𝑉i Γ— 𝑉i 𝑉s = 𝐴𝑣L Γ— Zi Zi+Rs University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 29