1. AC model is an equivalent circuit that represents the AC characteristics of the transistor. It is a combination
of circuit elements, properly chosen, that best approximates the actual behavior of a semiconductor device under
specific operating conditions.
To analyze the working of a transistor in amplifier circuits, it beneficial to represent the devices in the form
of model circuits. The model circuit of transistor uses many interior parameters of transistor to define the operation.
There are two models commonly used in the small-signal ac analysis of transistor networks:
1. ππ equivalent (dynamic resistance) model.
2. hybrid equivalent (h-parameter) model.
The Parameters ππ , ππ, π΄π£, and π΄π are the most important parameters for the analysis of the AC characteristics of a
transistor circuit.
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed
Transistor AC Modeling
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2. Important procedures for ac analysis (small signal analysis)
1. Setting all dc sources to zero and replacing them by a short-circuit equivalent
2. Replacing all capacitors by a short-circuit equivalent
3. Removing all elements bypassed by the short-circuit equivalents introduced by steps 1 and 2
4. Redrawing the network in a more convenient and logical form.
5. Defining the important parameters of the transistor model.
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed
Transistor AC Modeling
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4. Common-Emitter Configuration
The equivalent circuit for the common-emitter configuration will be constructed using the device characteristics and a
number of approximations. Starting with the input side, we find the applied voltage π½π is equal to the voltage π½ππ
(0.7) with the input current being the base current π°π.
If we redraw the collector characteristics to have a constant π· (another approximation), the entire characteristics at the
output section can be replaced by a current controlled source whose magnitude is beta times the base current.
Because all the input and output parameters of the original configuration are now present, the equivalent network for
the common-emitter configuration has been established.
The equivalent model can be improved by first replacing the diode by its equivalent resistance ππ =
ππππ½
π°π«
.
Using the subscript e because the determining current is the emitter current will result in ππ =
ππππ½
π°π¬
ππ =
ππ
πΌπ
=
πππ
πΌπ
πππ = πΌπππ = πΌπ + πΌπ ππ
πππ = π½πΌπ + πΌπ ππ = π½ + 1 πΌπππ
ππ =
πππ
πΌπ
=
π½+1 πΌπππ
πΌπ
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed
The ππTransistor Model
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5. The result is that the impedance seen βlooking intoβ the base of the network is a resistor equal to
beta times the value of ππ. The collector output current is still linked to the input current by beta
as shown in the same figure.
The output impedance ππ can be calculated and it is appear as a resistor in parallel with the output
as shown in the equivalent circuit.
For the common-emitter configuration there is a 180 Β° phase shift.
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 5
9. Common Emitter, Voltage Divider Bias Configuration
πΉπ and πΉπ remain part of the input circuit, whereas π πΆ is part of the output circuit. The parallel
combination of π 1 and π 2 is defined by πΉβ² = πΉπ β₯ πΉπ.
Input impedance (ππ)
For large π π΅ (larger than 10 π½ππ) ππ β π½ππ
Output impedance (ππ)
For πo larger than 10RC) πo β π C
Voltage gain (π¨π½)
Electrical Engineering Dept / Year Two / Semester I / Electronic I / Dr. Ahmed M. Mohammed 9
11. CE Emitter-Base Configuration with π πΈ (Unbypassed circuit analysis)
Applying Kirchhoffβs voltage law to the input side
ππ = πΌππ½ππ + πΌππ πΈ
ππ = πΌππ½ππ + (π½ + 1)πΌππ πΈ
the input impedance looking into the network to the right of π π΅is:-
ππ =
ππ
πΌπ
=
πΌπ[π½ππ+ π½+1 π πΈ]
πΌπ
= π½ππ + π½ + 1 π πΈ
for
for
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 11
16. Note
Another variation of an emitter-bias configuration is shown below. For the dc analysis, the emitter
resistance (π πΈ) is (π πΈ1+π πΈ2), whereas for the ac analysis, the resistor (π πΈ)in the equations above is
simply (π πΈ1) with (π πΈ2) bypassed by C.
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 16
17. Collector Feedback Configuration
The collector feedback network of the figure below employs a feedback path from collector to base to
increase the stability of the system as discussed in (DC analysis). However, the simple maneuver of
connecting a resistor from base to collector rather than base to dc supply has a significant effect on the
level of difficulty encountered when analyzing (ac) the network.
Substituting the equivalent circuit and redrawing the network results in the configuration shown below.
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 17
19. Collector Feedback Configuration
Output impedance (ππ¨)
If (ππ) is set to zero as required to define ππ, the network will appear as shown below. The effect of (π½ππ) is
removed, and (π πΉ) appears in parallel with (π πΆ) and :-
Zπ = π πΉ ββ π πΆ
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 19
20. Collector Feedback Configuration
Voltage gain (π¨π)
π΄π£ =
ππ
ππ
ππ = πΌππ½ππ
π
π = βπΌππ πΆ = β(πΌβ² + π½πΌπ)π πΆ
π
π = β(βπ½πΌπ
(π πΆ+ππ)
π πΆ+π πΉ
+ π½πΌπ)π πΆ
π
π = βπ½πΌπ(1 β
π πΆ+ππ
π πΆ+π πΉ
)π πΆ
π΄π£ =
βπ½πΌπ(1β
π πΆ+ππ
π πΆ+π πΉ
)π πΆ
πΌππ½ππ
π΄π£ = β 1 β
π πΆ+ππ
π πΆ+π πΉ
π πΆ
ππ
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 20
Since π πΆ β«β« ππ
π΄π£ = β 1 β
π πΆ
π πΆ+π πΉ
π πΆ
ππ
π΄π£ = β
π πΉ
π πΆ+π πΉ
π πΆ
ππ
the negative sign indicates a 180Β° phase shift
between π
π and ππ.
21. Collector Feedback Configuration with π πΈ
For the configuration of the figure shown below, the following equations are use to determine the variables
of interest.
Input impedance (ππ)
ππ =
π πΈ
1
π½
+
π πΆ+π πΈ
π πΉ
Output impedance (ππ¨)
Zπ = π C ββ π πΉ
Voltage gain (π¨π)
π¨π = β
π πΆ
π πΈ
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 21
22. Common-Base Configuration
The common-base configuration is characterized as having a relatively low input and a high output impedance and a
current gain less than 1. The voltage gain, however, can be quite large. The standard configuration appears in Figure
bellow, with the common-base ππ equivalent model substituted.
input impedance ππ
ππ = π πΈ β₯ ππ
Output impedance ππ
ππ = π πΆ
Voltage gain π¨π
ππ = πΌπππ
π
π = βπΌππ πΆ = πΌπΌππ πΆ
π΄π£ =
ππ
ππ
=
πΌπΌππ πΆ
πΌπππ
π΄π£ =
πΌπ πΆ
ππ
β
π πΆ
ππ
(for πΌ = 1)
Current gain π¨π
π΄i =
Iπ
Iπ
= βΞ± = β1
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 22
24. Common Collector (Emitter-Follower) Configuration
When the output is taken from the emitter terminal of the transistor as shown in Figure, the
network is referred to as an emitter-follower. The output voltage is always slightly less than the
input signal due to the drop from base to emitter, but the approximation Av = 1 is usually a good
one. Unlike the collector voltage, the emitter voltage is in phase with the signal Vi. That is, both
Vo and Vi attain their positive and negative peak values at the same time. The fact that Vo
βfollowsβ the magnitude of Vi with an in-phase relationship accounts for the terminology emitter-
follower.
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 24
25. Substituting the ππ equivalent circuit into the network of figure above results the network of figure below.
The input impedance is determined in the same manner as described earlier in this lecture.
input impedance ππ
ππ = π π΅ β₯ ππ
ππ β π½(ππ+π πΈ)
output impedance ππ
Ib =
πi
Zb
πΌπ = π½ + 1 πΌπ βββ πΌπ = π½ + 1
πi
Zb
Substituting for Zb gives; - πΌπ =
π½+1 πi
π½ (ππ+π πΈ)
Solving for π½ + 1 β π½ and set the input voltage to zero
πΌπ =
π½+1 πi
π½ (ππ+π πΈ)
=
ππ
ππ+π πΈ
πo = π πΈ β₯ ππ
πo β ππ for π πΈ β« ππ
Voltage gain π¨π
Av =
πo
πi
=
RE
RE+re
Av =
πo
πi
β 1 for (π πΈ β« ππ)
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 25
26. Effect of π πΏ and π π
All the parameters determined before have been for an unloaded amplifier with the input
voltage connected directly to a terminal of the transistor. Now the effect of applying a load to the
output terminal and the effect of using a source with an internal resistance will be investigated.
As shown in the network below.
π΄π£NL =
ππ
ππ
π΄π£L =
ππ
ππ
π΄π£s =
ππ
πs
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 26
27. The loaded voltage gain of an amplifier is always less than the no-load gain.
In other words, the addition of a load resistor π πΏ to the configuration will always have the effect of
reducing the gain below the no-load level.
The gain obtained with a source resistance in place will always be less than that obtained under loaded
or unloaded conditions due to the drop in applied voltage across the source resistance.
In total, therefore, the highest gain is obtained under no-load conditions and the lowest gain with a source
impedance and load in place. That is:
For the same configuration π΄π£ππΏ > π΄π£πΏ > π΄π£π
For a particular design, the larger the level of (π πΏ), the greater is the level of ac gain.
In other words, the larger the load resistance, the closer it is to an open-circuit approximation that would
result in the higher no-load gain.
In addition:
For a particular amplifier, the smaller the internal resistance of the signal source, the greater is the
overall gain.
In other words, the closer the source resistance is to a short-circuit approximation, the
greater is the gain because the effect of R s will essentially be eliminated.
For any network that have coupling capacitors, the source and load resistance do not affect the dc
biasing levels.
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 27
28. For Common Emitter Configuration
ππ = π B β₯ Ξ²ππ π΄π£NL =
ππ
ππ
=
βπ πΆβ₯πo
re
πo = π C β₯ πo π΄π£L =
ππ
ππ
=
βπ πΆβ₯RLβ₯πo
re
ππ
β²
= π C β₯ πo β₯ RL π΄π£s =
ππ
πs
=
ππ
πi
Γ
πi
πs
= π΄π£L Γ
Zi
Zi+Rs
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 28
29. For (emitter-follower) Common Collector Configuration
ππ = π π΅ β₯ ππ
ππ β π½ [ππ + (π πΈ β₯ RL)]
πo = π πΈ β₯ ππ
ππ
β²
= π πΈ β₯ RL β₯ ππ
AvNL =
RE
RE+re
AvL =
REβ₯RL
(REβ₯RL)+re
π΄π£s =
ππ
πs
=
ππ
πi
Γ
πi
πs
= π΄π£L Γ
Zi
Zi+Rs
University of Technology / Electrical Engineering Dept / Electronic I / Dr. Ahmed M. Mohammed 29