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A squashed and squeezed h-BN
Claudio Attaccalite
L. Artús, A. Segura. M. Feneberg, J. H.
Edgar, J. Li, R. Goldhahn, T. Taniguchi, K.
Watanabe, R. Cuscó,
F. Paleari, P. Lechifflart
h-BN introduction
Bright Luminescence from Indirect and Strongly
Bound Excitons in h-BN
L. Schué, L. Sponza, A. Plaud, H. Bensalah, K.
Watanabe, T. Taniguchi, F. Ducastelle, A. Loiseau,
and J. Barjon
Phys. Rev. Lett. 122, 067401 (2019)
Flat Bands and Giant Light-Matter Interaction in
Hexagonal Boron Nitride
C. Elias, G. Fugallo, P. Valvin, C. L’Henoret, J. Li, J. H.
Edgar, F. Sottile, M. Lazzeri, A. Ouerghi, B. Gil, and G.
Cassabois
Phys. Rev. Lett. 127, 137401 (2021)
Ellipsometry Study of Hexagonal Boron Nitride
using Synchrotron Radiation
Ellipsometry Study of Hexagonal Boron Nitride
using Synchrotron Radiation
Optical spectra of h-BN 1/2
Ellipsometry Study of Hexagonal Boron Nitride Using
Synchrotron Radiation: Transparency Window in the
Far UVC
‐
Luis Artús, M. Feneberg, C. Attaccalite, J. H. Edgar, J.
Li, R. Goldhahn, Ramon Cuscó
Advanced Photonics Research 2 (5), 2000101(2021)
Optical spectra of h-BN 2/2
Two-photon absorption in two-dimensional materials: The case of h-BN
C. Attaccalite, M. Grüning, H. Amara, S. Latil, and F. Ducastelle Phys. Rev. B 98, 165126 (2018)
Excitons in few-layer hexagonal boron nitride: Davydov splitting and surface localization
F. Paleari et al. 2D Mater. 5 045017 (2018)
Optical spectra of h-BN 2/2
Two-photon absorption in two-dimensional materials: The case of h-BN
C. Attaccalite, M. Grüning, H. Amara, S. Latil, and F. Ducastelle Phys. Rev. B 98, 165126 (2018)
Excitons in few-layer hexagonal boron nitride: Davydov splitting and surface localization
F. Paleari et al. 2D Mater. 5 045017 (2018)
Davydov splitting
hBN at finite pressure
These are not trivial experiments, as conventional diamond anvil cells cannot be used to
optically access the bandgap spectral range of h-BN. Instead, one has to use
sapphire anvils, which are rather brittle and prone to crack easily under pressure.
Sapphire anvils
Reflectance spectra of h-BN
under pressure
h-BN under pressure: atomic structure
hBN under pressure: the band structure
A Unified Understanding of the Thickness-Dependent Bandgap Transition in
Hexagonal Two-Dimensional Semiconductors
Kang, J.; Zhang, L.; Wei, S.-H. , J. Phys. Chem. Lett. 2016, 7, 597−602 (2016)
hBN under pressure: excitons
Excitons decomposition
Gaps and excitons
under pressure
hBN under pressure: excitons
Gaps and excitons
under pressure
Exciton binding energies
as a function of pressure
Experiments vs theory
Direct and indirect excitonic transitions
determined from the reflectance spectra
compared with the ab-initio theoretical
calculations (solid lines).
h-BN under strain
Strained hBN : phonon dispersion
Strained hBN : phonon dispersion
Strained hexagonal boron nitride: Phonon shift and
Grüneisen parameter.
Androulidakis, C., Koukaras, E. N., Poss, M.,
Papagelis, K., Galiotis, C., & Tawfick, S. Physical
Review B, 97(24), (2018).
Band structure under uni-axial stress
Direct band-gap
Indirect band-gap
Excitons under strain 1/2
Exciton positions
follow the gaps
Excitons under strain 2/2
Exciton positions
follow the gaps
Breaking of 120º rotation!!
Exciton-phonon coupling in the ultraviolet absorption and emission spectra of bulk hexagonal boron nitride.
Paleari, F., Miranda, H. P., Molina-Sánchez, A., & Wirtz, L. .Physical review letters, 122(18),(2019)
12 different phonon modes and
4 transitions
Lumuninescence through
van Roosbroeck – Shockley relation
Luminescence
Experiments
Vibrational Properties in Highly Strained
Hexagonal Boron Nitride Bubbles
Elena Blundo et al.
Nano Lett. , 22, 4, 1525–1533 (2022)
[Up to 2.5% strain!!!]
h-BN on micro-structures substrate
Léonard Schué, J. Barjon, A. Loiseau
work in progress
Conclusions
Ellipsometry Study of Hexagonal Boron Nitride Using Synchrotron Radiation: Transparency Window in the Far UVC
‐
Luis Artús, M. Feneberg, C. Attaccalite, J. H. Edgar, J. Li, R. Goldhahn, Ramon Cuscó
Advanced Photonics Research 2 (5), 2000101(2021)
Tuning the Direct and Indirect Excitonic Transitions of h BN by Hydrostatic Pressure
‐
A. Segura, R. Cuscó, C. Attaccalite, T. Taniguchi, K. Watanabe, and L. Artús,
The Journal of Physical Chemistry C 125 (23), 12880-12885 (2021)
Excitons under strain: light absorption and emission in strained hexagonal boron nitride
P. Lechifflart, F. Paleari, C. Attaccalite, SciPost Phys. 12, 145 (2022)
References
●
Ellipsometric study performed with synchrotron radiation in 2D/layered
compounds up to 25 eV
●
We have investigated the pressure-induced shifts of direct and indirect
excitonics in bulk h-BN layered crystal, reduction exciton binding energy.
●
Uniaxial strain effect on optical proprties of h-BN, breaking the symmetries
Lumuninescence through
van Roosbroeck – Shockley relation 1/2
Exciton-phonon coupling in the ultraviolet absorption and emission spectra of bulk hexagonal boron nitride.
Paleari, F., Miranda, H. P., Molina-Sánchez, A., & Wirtz, L. .Physical review letters, 122(18),(2019)
Non-diagonal supercell commensurate with
phonon momentum
Finite-difference
derivative
Rate of spontaneous emission in steady-state approximation
Reflectivity and reflectance
Calculated reflectivity spectrum associated with the direct excitonic transitions (dashed line),
compared with the experimental reflectance measurement (red dots). The blue and green
sigmoidal dotted lines account for, respectively, the drop of reflectance due to the
absorption at the direct and indirect excitonic energies suppressing the reflection at
the bottom interface. The solid line is the resulting calculated reflectance after taking into
account the self-absorption effect.
Static Bethe-Salpeter equation (state of the art)
Bethe-Salpeter equation
Excitonic dipoles
Theory vs experiments 1/2
….perfect agreement?...
Electron-phonon DGap
PRB 99, 165201 (2019) 0.273 eV
PRB 101, 205115 (2020) 0.35 eV (0.4 at 300K)
PRB 102, 045117 (2020) 0.2 eV
First Exciton
Exp. 6.12 eV
GoWo + BSE 5.76 eV
evGW + BSE 6.03 eV
QSGW + BSE
PRM 2, 034603 (2018)
6.11 eV
DMC (SJ+B)
PRB 101,205115(2020)
6.44(2) eV
and more: vertex correction, phonon screening
Reduction exciton
binding energy
PRL 101,106405 (2008)
30% * 0.8eV = 0.26 eV

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A squashed and squeezed h-BN

  • 1. A squashed and squeezed h-BN Claudio Attaccalite L. Artús, A. Segura. M. Feneberg, J. H. Edgar, J. Li, R. Goldhahn, T. Taniguchi, K. Watanabe, R. Cuscó, F. Paleari, P. Lechifflart
  • 2. h-BN introduction Bright Luminescence from Indirect and Strongly Bound Excitons in h-BN L. Schué, L. Sponza, A. Plaud, H. Bensalah, K. Watanabe, T. Taniguchi, F. Ducastelle, A. Loiseau, and J. Barjon Phys. Rev. Lett. 122, 067401 (2019) Flat Bands and Giant Light-Matter Interaction in Hexagonal Boron Nitride C. Elias, G. Fugallo, P. Valvin, C. L’Henoret, J. Li, J. H. Edgar, F. Sottile, M. Lazzeri, A. Ouerghi, B. Gil, and G. Cassabois Phys. Rev. Lett. 127, 137401 (2021)
  • 3. Ellipsometry Study of Hexagonal Boron Nitride using Synchrotron Radiation
  • 4. Ellipsometry Study of Hexagonal Boron Nitride using Synchrotron Radiation
  • 5. Optical spectra of h-BN 1/2 Ellipsometry Study of Hexagonal Boron Nitride Using Synchrotron Radiation: Transparency Window in the Far UVC ‐ Luis Artús, M. Feneberg, C. Attaccalite, J. H. Edgar, J. Li, R. Goldhahn, Ramon Cuscó Advanced Photonics Research 2 (5), 2000101(2021)
  • 6. Optical spectra of h-BN 2/2 Two-photon absorption in two-dimensional materials: The case of h-BN C. Attaccalite, M. Grüning, H. Amara, S. Latil, and F. Ducastelle Phys. Rev. B 98, 165126 (2018) Excitons in few-layer hexagonal boron nitride: Davydov splitting and surface localization F. Paleari et al. 2D Mater. 5 045017 (2018)
  • 7. Optical spectra of h-BN 2/2 Two-photon absorption in two-dimensional materials: The case of h-BN C. Attaccalite, M. Grüning, H. Amara, S. Latil, and F. Ducastelle Phys. Rev. B 98, 165126 (2018) Excitons in few-layer hexagonal boron nitride: Davydov splitting and surface localization F. Paleari et al. 2D Mater. 5 045017 (2018) Davydov splitting
  • 8. hBN at finite pressure These are not trivial experiments, as conventional diamond anvil cells cannot be used to optically access the bandgap spectral range of h-BN. Instead, one has to use sapphire anvils, which are rather brittle and prone to crack easily under pressure. Sapphire anvils
  • 9. Reflectance spectra of h-BN under pressure
  • 10. h-BN under pressure: atomic structure
  • 11. hBN under pressure: the band structure A Unified Understanding of the Thickness-Dependent Bandgap Transition in Hexagonal Two-Dimensional Semiconductors Kang, J.; Zhang, L.; Wei, S.-H. , J. Phys. Chem. Lett. 2016, 7, 597−602 (2016)
  • 12. hBN under pressure: excitons Excitons decomposition Gaps and excitons under pressure
  • 13. hBN under pressure: excitons Gaps and excitons under pressure Exciton binding energies as a function of pressure
  • 14. Experiments vs theory Direct and indirect excitonic transitions determined from the reflectance spectra compared with the ab-initio theoretical calculations (solid lines).
  • 16. Strained hBN : phonon dispersion
  • 17. Strained hBN : phonon dispersion Strained hexagonal boron nitride: Phonon shift and Grüneisen parameter. Androulidakis, C., Koukaras, E. N., Poss, M., Papagelis, K., Galiotis, C., & Tawfick, S. Physical Review B, 97(24), (2018).
  • 18. Band structure under uni-axial stress Direct band-gap Indirect band-gap
  • 19. Excitons under strain 1/2 Exciton positions follow the gaps
  • 20. Excitons under strain 2/2 Exciton positions follow the gaps Breaking of 120º rotation!!
  • 21. Exciton-phonon coupling in the ultraviolet absorption and emission spectra of bulk hexagonal boron nitride. Paleari, F., Miranda, H. P., Molina-Sánchez, A., & Wirtz, L. .Physical review letters, 122(18),(2019) 12 different phonon modes and 4 transitions Lumuninescence through van Roosbroeck – Shockley relation
  • 23. Experiments Vibrational Properties in Highly Strained Hexagonal Boron Nitride Bubbles Elena Blundo et al. Nano Lett. , 22, 4, 1525–1533 (2022) [Up to 2.5% strain!!!] h-BN on micro-structures substrate Léonard Schué, J. Barjon, A. Loiseau work in progress
  • 24. Conclusions Ellipsometry Study of Hexagonal Boron Nitride Using Synchrotron Radiation: Transparency Window in the Far UVC ‐ Luis Artús, M. Feneberg, C. Attaccalite, J. H. Edgar, J. Li, R. Goldhahn, Ramon Cuscó Advanced Photonics Research 2 (5), 2000101(2021) Tuning the Direct and Indirect Excitonic Transitions of h BN by Hydrostatic Pressure ‐ A. Segura, R. Cuscó, C. Attaccalite, T. Taniguchi, K. Watanabe, and L. Artús, The Journal of Physical Chemistry C 125 (23), 12880-12885 (2021) Excitons under strain: light absorption and emission in strained hexagonal boron nitride P. Lechifflart, F. Paleari, C. Attaccalite, SciPost Phys. 12, 145 (2022) References ● Ellipsometric study performed with synchrotron radiation in 2D/layered compounds up to 25 eV ● We have investigated the pressure-induced shifts of direct and indirect excitonics in bulk h-BN layered crystal, reduction exciton binding energy. ● Uniaxial strain effect on optical proprties of h-BN, breaking the symmetries
  • 25. Lumuninescence through van Roosbroeck – Shockley relation 1/2 Exciton-phonon coupling in the ultraviolet absorption and emission spectra of bulk hexagonal boron nitride. Paleari, F., Miranda, H. P., Molina-Sánchez, A., & Wirtz, L. .Physical review letters, 122(18),(2019) Non-diagonal supercell commensurate with phonon momentum Finite-difference derivative Rate of spontaneous emission in steady-state approximation
  • 26. Reflectivity and reflectance Calculated reflectivity spectrum associated with the direct excitonic transitions (dashed line), compared with the experimental reflectance measurement (red dots). The blue and green sigmoidal dotted lines account for, respectively, the drop of reflectance due to the absorption at the direct and indirect excitonic energies suppressing the reflection at the bottom interface. The solid line is the resulting calculated reflectance after taking into account the self-absorption effect.
  • 27. Static Bethe-Salpeter equation (state of the art) Bethe-Salpeter equation Excitonic dipoles
  • 28. Theory vs experiments 1/2 ….perfect agreement?... Electron-phonon DGap PRB 99, 165201 (2019) 0.273 eV PRB 101, 205115 (2020) 0.35 eV (0.4 at 300K) PRB 102, 045117 (2020) 0.2 eV First Exciton Exp. 6.12 eV GoWo + BSE 5.76 eV evGW + BSE 6.03 eV QSGW + BSE PRM 2, 034603 (2018) 6.11 eV DMC (SJ+B) PRB 101,205115(2020) 6.44(2) eV and more: vertex correction, phonon screening Reduction exciton binding energy PRL 101,106405 (2008) 30% * 0.8eV = 0.26 eV