Uploaded bynewstarting264
PDF, PPTX82 views

ppt pdf_merged.pdf for 1st year BEE ELECTRONICS SUBJECT

1) The document discusses basic electronics concepts including why we learn electronics, what electronics is, and applications of electronics such as communication, defense, industrial uses, and medical science. 2) It also covers semiconductor concepts like intrinsic and extrinsic semiconductors, and how doping with n-type and p-type materials creates a p-n junction in a diode. 3) The formation and biasing of p-n junction diodes is explained, including the diffusion process that creates a depletion layer, and how forward and reverse biasing changes the width of this layer to allow or block current flow.

Embed presentation

Download as PDF, PPTX
1 / 111
2 / 111
3 / 111
4 / 111
5 / 111
6 / 111
7 / 111
8 / 111
9 / 111
10 / 111
11 / 111
12 / 111
13 / 111
14 / 111
15 / 111
16 / 111
17 / 111
18 / 111
19 / 111
20 / 111
21 / 111
22 / 111
23 / 111
24 / 111
25 / 111
26 / 111
27 / 111
28 / 111
29 / 111
30 / 111
31 / 111
32 / 111
33 / 111
34 / 111
35 / 111
36 / 111
37 / 111
38 / 111
39 / 111
40 / 111
41 / 111
42 / 111
43 / 111
44 / 111
45 / 111
46 / 111
47 / 111
48 / 111
49 / 111
50 / 111
51 / 111
52 / 111
53 / 111
54 / 111
55 / 111
56 / 111
57 / 111
58 / 111
59 / 111
60 / 111
61 / 111
62 / 111
63 / 111
64 / 111
65 / 111
66 / 111
67 / 111
68 / 111
69 / 111
70 / 111
71 / 111
72 / 111
73 / 111
74 / 111
75 / 111
76 / 111
77 / 111
78 / 111
79 / 111
80 / 111
81 / 111
82 / 111
83 / 111
84 / 111
85 / 111
86 / 111
87 / 111
88 / 111
89 / 111
90 / 111
91 / 111
92 / 111
93 / 111
94 / 111
95 / 111
96 / 111
97 / 111
98 / 111
99 / 111
100 / 111
101 / 111
102 / 111
103 / 111
104 / 111
105 / 111
106 / 111
107 / 111
108 / 111
109 / 111
110 / 111
111 / 111
Basic Electronics • Why to learn Electronics? • What is Electronics? • Application/Use of Electronics Lecture 0
Why we have to learn Electronics?
Hardware (Electronics) Software Eg.Browser,App
What is Electronics? • Electronics is a field of science and engineering which deals with electronic devices and there utilization Deals – related Utilization – Use
Applications of Electronics 1) Communication There are two types of Communication a. Wired Communication – eg. Telegraphy, Telephone
Applications of Electronics 1) Communication a. Wireless Communication – eg. Smartphone, TV Broadcasting, Satellite Communication There are two types of Communication
Applications of Electronics 2) Defence • The most important application is RADAR (Radio Detection And Ranging) • By using RADAR, Exact Position of enemy aircraft can be found out.
Applications of Electronics 3) Industrial Application Under Industrial Applications, Electronics Circuits are used to control the thickness quality weight and moisture content Thickness, Quality, Weight, Moisture
Applications of Electronics 4) Medical Science 1) X-Ray – To take pictures of interracial bone structure 2) ECG – To Find condition of heart 3) Oscillographs – To check muscle action
Basic Electronics Lecture 2 1) What is Semiconductor? 3) Types of Semiconductor 2) Uses of Semiconductor
Semiconductor Semiconductor • A semiconductor is a type of material that has properties in between those of a conductor and an insulator • Semiconductor can only pass electricity under certain condition Conductor – Which can pass electricity Insulator – Which cannot pass electricity
Uses Of Semiconductor Integrated circuits(IC) Transistors Diodes
Types of Semiconductor Intrinsic Semiconductor Extrinsic Semiconductor
Intrinsic Semiconductor • Intrinsic Semiconductor are pure semiconductor formed by tetravalent atoms Pure – clean (without impurity) Tetravalent Element having valency four Four Valency 2 Valency– Divalent, 3 Valency– Trivalent, 5 Valency- Pentavalent • E.g. Silicon, Germanium • Tretravalent atom has four valence electrons
Intrinsic Semiconductor (Crystal Lattice Structure) Si Si Si Si Si Intrinsic Semiconductor Room Temperature Entered Heat Hole Free Electrons (Bounded) Electrons – Sufficient Energy Due to excessive free electrons conductivity increases and resistivity decrease
1) The figure shows crystal lattice structure of silicon atom. 2) Each silicon atom forms a covalent bond with the other silicon atom present in the neighboring areas. 3) At the room temperature there electrons are bounded to each other. 4) But entered heat is applied, there electrons gain sufficient energy and leaves its position and at that point of time a valency of electrons is created which is known as hole. 5) With the increasing temperature electron leaves its position and gets for causing conductivity increased and resistance decreases
Basic Electronics Lecture 3 • Extrinsic Semiconductor • Types of Extrinsic Semiconductor
Extrinsic Semiconductor Extrinsic semiconductors are impure form of semiconductor material formed by either pentavalent or trivalent impurity into a pure semiconductor atom Pure – clean (without impurities) Pentavalent Five Valency - Elements having valency 5 Trivalent - Element having valency 3
Extrinsic Semiconductor When the impurities are added to the intrinsic semiconductor, it becomes an extrinsic semiconductor The process of adding impurties are called doping Types Extrinsic Semiconductor N-Type Semiconductor P-Type Semiconductor
N-Type Semiconductor • N-Type Semiconductor are formed by adding a small amount of pentavalent impurity to the pure silicon or germanium • The Pentavalent element is the one which has five valence electrons • Examples are Phosphorus, Antimony • It is also known as Donor Impurity due to presence of extra free electrons
N-Type Semiconductor(Crystal Lattice Structure) P Si Si Si Si Room Temperature (Structure) External heat Free Electron (Negatively charged) Due to hole formation in covalent bond conductivity increased
N-Type Semiconductor • Here we have used phosphorus atom to be added into a pure silicon structure • Group of 5 electrons contain one covalent bond and there will be one free electron • So the four electrons of phosphorus form four covalent bond with its neighboring silicon atom but still a free electron is left which is unbounded • Further, when external heat is provided, electron leaves the covalent bond, leaves its position vacant thereby causing a hole • It increases the conductivity thereby creating a hole
P-Type Semiconductor • P-Type Semiconductor are formed by adding a small amount of trivalent impurity to the pure silicon or germanium • The materials having 3 valence electron per atom known as trivalent materials Trivalent – Elements having valency 3 • Ex. Boron, Gallium, Indium
P-Type Semiconductor B Si Si Si Si Room Temperature (Structure) External heat Free Electron (Negatively charged) This hole will make the semiconductor a P-type semiconductor
P-Type Semiconductor • As shown in the figure, when a boron atom is added to the silicon atom, its 3 valence electrons will form covalent bond with the valence electron of 3 neighboring silicon atom • The fourth covalent bond remains incomplete as the boron atom has only 3 valence electrons • The resulting vacancy is called a Hole and it is represented by a small circle (o) • A hole is the positively charged as it represents the absence of a negative charge • This hole will make the semiconductor a P-type semiconductor
Basic Electronics Lecture 4 • What is Diode? • What is P-N Junction? • Formation of Diffussion process • Formation of Dipletion Layer
Diode • Diode is an electronic device with two element namely Anode and Cathode
P-N Junction • An P-type Semiconductor and N-type Semiconductor are joined together with the help of a fabrication technique to form a P-N Junction P N Majority charge Minority charge Majority charge Minority charge Junction
P-N Junction Diode symbol P N
Formation of diffusion process P N
Formation of diffusion process • In order to create p-n junction diode, we have to take one P-type and one N-type semiconductor and joint it. • The tendency of electrons is to move towards the positive side • In P-type semiconductor majority charge carriers are holes and electrons are the minority charge carriers • In N-type semiconductor electrons are the majority charge carriers and holes are the minority charge carriers • The electrons will move towards the hole and diffuses itself while the holes will move towards the electrons and diffuses itself. The process is called diffusion process.
Formation of Depletion Layer P N + - - - - + + + -ve immobile ions +ve immobile ions Depletion Layer
Formation of Depletion Layer • The free electrons from N-side will defuse into the P-side and recombine the holes present there. • Each electron will leave behind a positive immobile ion into the N- side and each hole will defuses into the N-side will leave behind a negative immobile ion • Due to this recombination process, a large no.of positive ions accumulate near the junction on the n-side and a large no.of negative immobile ions will accumulate on the p-side near the junction • The negatively charged ions on the p-side will start repuling the electrons and after some time the diffusion will stop completely
Formation of Depletion Layer • The p-n junction is in the state of equilibrium • The shaded region on both sides of the junction contains only immobile ions and no free charge carriers such as electrons or holes • These region is called as depletion region • The width of the depletion region is 0.5-1 mm (micrometer)
Basic Electronics Lecture 5 • Biasing of P-N Junction Diode • Forward Biasing • Reverse Biasing
Biasing of P-N Junction Diode P N + - - - - + + + -ve immobile ions +ve immobile ions Biasing Potential Barrier (Not allows the Charge carriers to Diffuse)
Biasing of P-N Junction Diode • When the P-N Junction is formed the depletion region gets created and the movement of electrons and holes stops • The current flowing through an unbiased p-n junction is 0. • To make the current flow , we have to biase the p-n junction diode • Biasing is the process of applying external supply to the semiconductor diode • Types of Biasing – 1. Forward Biasing 2. Reversed Biasing
Forward Biasing P N + - - - - + + + Depletion Layer (Thickness) Potential Barrier Resistance Current
• If the P region is connected to the Positive terminal of the battery and N region is connected to the Negative terminal of the battery, then the Biasing is said to be Forward Biasing • Due to the negative terminal of the battery connected to the N region the free electrons from N side will move towards the P-side • With increasing in the external voltage, more and more number of holes and electrons starts travelling towards the junction Forward Biasing • The holes will start converting the negative ions into neutral atoms and the electrons will convert the positive ions into neutral atoms • As a result, the width of the depletion region will reduce
Reversed Biasing P N + - - - - + + + Depletion Layer (Thickness) Potential Barrier Resistance Current
• If the P region is connected to the Negative terminal of the battery and N region is connected to the Positive terminal of the battery, then the Biasing is said to be Reverse Biasing • The reverse current will flow from cathode to anode of the diode • When the diode is reverse biased, the holes in the P region are attracted towards the negative terminal of battery and electrons on the N region are attracted towards the positive terminal of battery • Due to the movement of electrons and holes away from the junction, width of the depletion region increases Reverse Biasing
Basic Electronics Lecture 6 • Zener Diode • Forward and Reverse Biasing • P-N Junction Vs. Zener Diode
Why to Use Zener Diode? P N P-N Junction Diode Ib Vb 0 Breakdown Voltage Neutral Atoms are present Due to this high no. of electrons, heat is generated and p-n junction gets destroyed Minority Charge
Zener Diode • Zener Diode is a special purpose p-n junction diode • Its Construction is similar to p-n junction diode • Its is designed to operate in Zener breakdown region • Zener diode acts like normal p-n junction diode under forward biased condition • Symbol - Anode Cathode
Zener Diode • It is a two terminal device and the terminals are Anode and Cathode • The arrowhead in the symbol points toward the direction of the current flows through the Zener diode it is in forward biased
Forward Biasing in Zener Diode Cut-in Voltage VF IF When the Anode of the Zener Diode is connected to the positive terminal of the battery and Cathode is connected to the negative terminal of the battery then the Zener diode is said to be Forward biased
Reverse Biasing in Zener Diode P N Neutral Atoms are present Iz Vz 0 Breakdown Voltage Zener Diode
Reverse Biasing in Zener Diode When the Cathode of the Zener Diode is connected to the positive terminal of the battery and Anode is connected to the negative terminal of the battery then the Zener diode is said to be Reverse biased
Reverse Biasing in Zener Diode • As we increase the reverse voltage initially a small amount of current will flow. • This current flows due to the thermally generated minority carriers • At a certain value of reverse voltage, the reverse current will increase suddenly • These breakdown voltage is called as Zener breakdown voltage which is denoted by Vz
Basic Electronics Lecture 7 • Rectifier • Full Wave Rectifier • Half Wave Rectifier
Rectifier • Rectifier is an electronic device which is used for converting AC Voltage/Current into DC Voltage/Current 220V AC – 5V DC • The process of converting AC Voltage/Current into DC Voltage or Current is called as Rectification • There are 2 Types of Rectifier 1. Half Wave Rectifier 2. Full Wave Rectifier
Components Used In Rectifier AC Components Names Use P-N Junction Diode Transformer (Stepdown) To pass current in only one direction Step-Down the AC Voltage Load Resistor To Output smooth and stable voltage 220V AC supply To input the voltage
Some Basic concept • AC direction changes hence changes polarity of transformer AC Primary Coil (Input Voltage) Secondary coil (Output) AC Voltage (Input) 0 π 2π
Half-Wave Rectifier AC AC Voltage (Input) Output Current Positive Half cycle – A-D-RL-B Negative Half Cycle – No current flows Because p-n junction gets in reverse biased A B D RL CT 0 π 2π 3π 0 π 2π 3π
Half-Wave Rectifier • In Half-wave Rectifier, the rectifier is ON only during one half cycle of AC supply • So the Output is produced only in that half cycle • Figure shows a Half-wave Rectifier which is connected to the step-down transformer RL is the Load Resistor • In the positive half cycle (0-π) of the AC supply, the secondary voltage VAB is positive that is A is positive with respect to B • Hence the diode is forward bias and starts conducting • As the diode starts conducting the secondary voltage VAB appears across a load resistance
Half-Wave Rectifier • In the negative half cycle (π-2π) of the AC supply, the secondary voltage VAB is negative that is A is negative with respect to B • Hence, the diode is Reverse bias. The load is disconnected from the battery • Hence the load voltage and load current both are zero
Full-Wave Rectifier AC AC Voltage (Input) Output Current Positive Half cycle (A positive, B Negative) – A-D1-C1-RL-CT A B D1 CT D2 RL C1 0 π 2π 3π 0 π 2π 3π Negative Half cycle (B positive, A Negative) – B-D2-C1-RL-CT
Full-Wave Rectifier • A full-wave rectifier is a Rectifier which requires two or four diodes and it conducts for both half cycles • A center tapped transformer consist of a step-down center tapped transformer T1, 2 diodes and a load resistor RL • Due to the center tapped secondary transformer, D1 is forward biased and D2 is reversed biased • The load current starts flowing from A to D1 then load resistor RL back to the CT • In the negative half cycle, of the AC supply, B is positive with respect to A
Full-Wave Rectifier • Here D1 is reverse biased and D2 is forward biased • So D1 acts as an open circuited switch and D2 carries the entire load current • The direction of load current will be B-D2-C1-RL-CT
Basic Electronics Lecture 8 Bridge Rectifier - • Positive Half Cycle • Negative Half Cycle
Bridge Rectifier V1 A B CT RL D1 D2 D3 D4 AC Voltage (Input) 0 π 2π 3π Output Current 0 π 2π 3π
Bridge Rectifier • Bridge Rectifier rectifies the complete or full wave form • It consists of a Transformer(CT), four diode (D1, D2, D3, D4) and Load Resistance RL • Here V1 is the source voltage which is 230V, 50Hz • V2 is the input voltage given to the Rectifier
Positive Half Cycle V1 A B CT RL D1 D2 D3 D4 AC Voltage (Input) 0 π 2π 3π Output Current 0 π 2π 3π D1,D3 D1,D3 Positive Half cycle (A+, B-) :- A-D1-RL-D3-CT
Bridge Rectifier – Positive Half Cycle • During the positive Half cycle of the AC supply, A is positive with respect to B • Here D1 and D3 are in forward biased and D2 and D4 are in Reversed biased • Here, Load current will flow from A-D1-RL-D3-CT
Negative Half Cycle V1 A B CT RL D1 D2 D3 D4 AC Voltage (Input) 0 π 2π 3π Output Current 0 π 2π 3π D2,D4 Negative Half cycle (A-, B+) :- B-D2-RL-D4-CT
Bridge Rectifier – Negative Half Cycle • During the positive Half cycle of the AC supply, B is positive with respect to A • Here D2 and D4 are in forward biased and D1 and D3 are in Reversed biased • Here, Load current will flow from B-D2-RL-D4-CT
Basic Electronics Lecture 9 Filters Rectifier Output Constant DC
Need of Filters • Filter can be either construct by Capacitor or Inductor, when the Rectifier has its highest value it charges itself and when it has its value 0, Filter provides the output to Load • Filter is the electronic component used to remove the AC component present in the rectifier output and allows the DC component to reach load Definition :
Filters Ki Story Alternating Output from Rectifier Filters Pure Direct Current (DC) • Types of Filters :- 1) L Filter or Series Inductor Filter 2) C Filter or Shunt Capacitive Filter
C Filter or Shunt Capacitive Filter Full Wave Rectifier RL C Charging Discharge AC • This Filter consist of one capacitor connected in parallel with the load i.e. why, it is known as shunt capacitor Filter. The circuit diagram of shunt capacitive filter is given above
C Filter or Shunt Capacitive Filter • When the voltage wave increases from 0 to high value(max value), capacitor gets charged • When the voltage wave decreases from high value(min value) to 0, stored voltage in capacitor is transferred to Load and this cycle keeps on going. • By this, Load will get smooth output
L Filter or Series Inductor Filter Full Wave Rectifier RL L Charging Discharge AC • This Filter consist of one inductor connected in series with the load i.e. why, it is known as Series Inductor Filter. The circuit diagram of series inductor filter is given above
L Filter or Series Inductor Filter • When the voltage wave increases from 0 to high value(max value), inductor gets charged • When the voltage wave decreases from high value(max value) to 0, inductor changes its polarity and provide the stores voltage to the Load and this cycle keeps on going • By this, Load will get smooth output
Basic Electronics Lecture 10 • Bipolar Junction Transistor • NPN Transistor • PNP Transistor
Bipolar Junction Transistor (BJT) • The device is called as Bipolar because the conduction takes place due to electrons and holes • The name Transistor is the combination of 2 words i.e. Transfer and Resistor • It transfers the input signal current from low resistance circuit to high resistance circuit • Types and symbol of BJT are of two types 1) PNP Transistor 2) NPN Transistor
Bipolar Junction Transistor (BJT) P P N N P P N N PNP NPN P N P N N P Emitter Collector Base Base Collector Emitter
Bipolar Junction Transistor (BJT) • The arrow is always placed on the emitter terminal and the arrow direction indicated the direction of current flow of emitter current
Construction of PNP Transistor P N P Emitter Collector Base IB IC IE
Construction of PNP Transistor • The PNP Transistor is formed by sandwiching a thin N-Type semiconductor between two P-type semiconductor • Base comes in between Emitter and Collector region • Base is always thin and lightly doped layer • Emitter and collector layers are much wider than the base and are heavily doped • A Transistor has two P-N junctions :- 1. Emitter Junction 2. Collector Junction • In PNP Transistor, current flows through holes
Working of PNP Transistor • In PNP Transistor, when emitter junction is forward biased, holes present in emitter region gets pushed towards the electrons present in base region as it is connected to negative terminal of battery (IE) • As Base is less doped compared to Emitter region only few holes can diffuse the electrons • This phenomena generates the Base current (IB) • Rest of the holes gets collected towards collector and moved to negative terminal connected to the collector as collector current (IC)
Construction of NPN Transistor N P N Emitter Collector Base IB IE IC
Construction of NPN Transistor • The NPN Transistor is formed by sandwiching a thin P-Type semiconductor between two N-type semiconductor • Base comes in between Emitter and Collector region • Base is always thin and lightly doped layer • Emitter and collector layers are much wider than the base and are heavily doped • A Transistor has two P-N junctions :- 1. Emitter Junction 2. Collector Junction • In NPN Transistor, current flows through electrons
Working of NPN Transistor • The NPN Transistor, when emitter junction is forward biased, electrons present in Emitter region gets pushed towards the holes present in base region as it is connected to positive terminal of battery (IE) • As Base is less doped compared to Emitter region only few electrons can diffuse the holes • This phenomena generates the Base current (IB) • Rest of the electrons gets collected towards collector and moved to positive terminal connected to the collector as collector current (IC)
Basic Electronics Lecture 11
Configurations • The way or method of connecting transistor in circuit is called as Configuration • There are three types of configurations :- 1) CB configuration 2) CE configuration 3) CC configuration
Golden Points • Base cannot be output • Collector cannot be input • Input side will be Forward Biased • Output side will be Reversed Biased • IE = IB+IC
Common Base Configuration + + - - N N P E B C • Base can not be output • Collector cannot be input VBE VCB IE IC IB • IE = IB+IC Transfer Characteristics α = IC / IE
Common Emitter Configuration + + - - N P E B C • Base can not be output • Collector cannot be input VBE VCE IE IC IB N • IE = IB+IC Transfer Characteristics β = IC / IB
Common Collector Configuration + + - - N P E B C • Base can not be output • Collector cannot be input VBC VEC IE IC IB N • IE = IB+IC Transfer Characteristics Ɣ = IE / IB
Basic Electronics Lecture 13 • Active Region • Cut-off Region • Saturation Region
Active Region N P N E B C BE – Forward Biased CB –Reversed Biased VB > VE VC > VB Active region of transistor work as Amplifier
Active Region N P N E B C BE – Forward Biased CB –Reversed Biased VBE < 0 VB > VE VCB > 0 VC > VB Cut-off Region N P N E B C BE –Reversed Biased CB –Reversed Biased VB < VE VC > VB Cut-off region of transistor work as OFF Switch
Saturation Region BE – Forward Biased CB – Forward Biased VB > VE VC < VB E B C In the case of Saturation region of transistor work as ON Switch N P N
Field Effect Transistor Basic Electronics 13 FET Drain Gate Source • BJT Vs. FET • Applications • Types
BJT Vs. FET • IC depends on IB • ID depends on VGS • Current Control Device • Voltage Control Device • Bipolar Device • Unipolar Device e-  N-channel holes  P-channel
Applications of FET • Switch • Amplifier
Types of FET
Working of JFET Basic Electronics 14 • Introduction • Construction • Working • Characteristics (Diagram)
• N channel • Gate, Source, Drain • VGS, ID • FET is Voltage controlled device • 2 PN junction • 2 Depletion Region
P P N Drain Gate Source • VGS = 0V 0V + - 5V 5V 0V 4V 1V e-↑ N-Channel ID
Drain Characteristics JFET Basic Electronics 15
• Ohmic Region – In this region, Drain current increases linearly with increasing voltage of drain-to-source voltage following Ohm’s Law • Saturation Region – In this region, Drain current remains constant. • Pinch-off Voltage – The value of VDS at which the Drain Current (ID) saturates is Pinch-off Voltage • Breakdown Region – The region in which the value of Drain current (ID) drastically increases due to avalanche effect is Breakdown region
Basic Electronics 16 MOSFET N N P Substrate D S G • Classification • Construction • Working • Characteristics
N-channel N P Substrate D S G N OV N P Substrate D S G N OV VGS VGS VDS ↓ID
Basic Electronics Lecture 17 Transducer
What is Transducer? • Transducer is the device which converts one form of energy to another form of energy + Transduction Elements Physical Quantity Output Signal • Process of conversion of energy is Transduction • Conversion is done by Sensing and Transducing Elements Sensor
Need of Transducer? • It is quite difficult to measure the magnitude of these quantities directly • But if these physical forces are converted into electrical signal, it is way much easier to measure it Electrical Signal (Quantity)
Examples of Transducer? Sound Energy Electrical Energy Solar Energy Electrical Energy

More Related Content

ODT
SEMICONDUCTOR (project)
bySUDHA BHUJEL
 
PPTX
Semiconductor fundamentals.pptx
byssuser593a2d
 
PPTX
BEE introduction slides
byBLESSINAR0
 
PPTX
semiconductor.pptx class 12 physics chapter name semi conductors
bykosejiy217
 
PPTX
Semiconductor Devices.pptx
byssuser8984f3
 
PPTX
Semiconductors N. m.Aher
byNandalalAher1
 
PPTX
Introduction of Semiconductor and Its Type .pptx
bynitugatkal
 
PPTX
CSE-AE.pptx
byanitha5075
 
SEMICONDUCTOR (project)
bySUDHA BHUJEL
 
Semiconductor fundamentals.pptx
byssuser593a2d
 
BEE introduction slides
byBLESSINAR0
 
semiconductor.pptx class 12 physics chapter name semi conductors
bykosejiy217
 
Semiconductor Devices.pptx
byssuser8984f3
 
Semiconductors N. m.Aher
byNandalalAher1
 
Introduction of Semiconductor and Its Type .pptx
bynitugatkal
 
CSE-AE.pptx
byanitha5075
 

Similar to ppt pdf_merged.pdf for 1st year BEE ELECTRONICS SUBJECT

PDF
EE16.pdf fhdjjdkdbdhdjkdjdhdbdbdhdbdjdjdj
bytofalas995
 
PDF
Analog_Electronics_E_Contents semiconductor
byRANDHIRKUMARSAH2
 
PPT
Semiconductor devices
byGS Virdi
 
PPTX
Introduction to Semiconductor Materials and devices
byArunbhaarat S
 
PPTX
semiconductors ppt for 1 sem engineering
byNikhilSohani2
 
PPT
BEEME UNIT IV.ppt
byKarthik Kathan
 
PDF
EEE-1203_2.(Fundamentals of PN Junction Semiconductor Diode)pdf
by2401057
 
PPTX
Semiconductor Physics
byShahzaib Mahesar
 
DOC
Module No. 25
byRajput AbdulWaheed Bhatti
 
PPTX
Unit 1 - Semiconductor and chips PPT.pptx
bynishanthperiyasamy53
 
PPTX
Topic1_TypesofsemiconductorsandPNjunctionpptx__2023_02_21_08_57_13 (1).pptx
byLeeroyMugadza
 
PPT
Introduction to semiconductors
byVASUDEV SHRIVASTAVA
 
PPTX
Semiconductor Diode 13re4frr3ee33333.pptx
bytasnimzannat97
 
PDF
ELECTRONIC DEVICES AND MICROPROCESSOR(24EC307)-KONGUNADU COLLEGE OF ENGINEERI...
bySaranyaShanmugam28
 
PPTX
EEE 2187.......................... .pptx
bytalenthidden271
 
PPTX
Electronics: Semiconductors and diodes s
byMajidAlhemyari
 
PPTX
BEEE Unit IV.power point presentation notes
byPjeyaprakash2
 
PPTX
Semiconductor diodes
bypriyanka singh
 
PDF
Basic electronics
byAmit Khowala
 
PDF
Basic electronics
byCHINCHU THOMAS
 
EE16.pdf fhdjjdkdbdhdjkdjdhdbdbdhdbdjdjdj
bytofalas995
 
Analog_Electronics_E_Contents semiconductor
byRANDHIRKUMARSAH2
 
Semiconductor devices
byGS Virdi
 
Introduction to Semiconductor Materials and devices
byArunbhaarat S
 
semiconductors ppt for 1 sem engineering
byNikhilSohani2
 
BEEME UNIT IV.ppt
byKarthik Kathan
 
EEE-1203_2.(Fundamentals of PN Junction Semiconductor Diode)pdf
by2401057
 
Semiconductor Physics
byShahzaib Mahesar
 
Module No. 25
byRajput AbdulWaheed Bhatti
 
Unit 1 - Semiconductor and chips PPT.pptx
bynishanthperiyasamy53
 
Topic1_TypesofsemiconductorsandPNjunctionpptx__2023_02_21_08_57_13 (1).pptx
byLeeroyMugadza
 
Introduction to semiconductors
byVASUDEV SHRIVASTAVA
 
Semiconductor Diode 13re4frr3ee33333.pptx
bytasnimzannat97
 
ELECTRONIC DEVICES AND MICROPROCESSOR(24EC307)-KONGUNADU COLLEGE OF ENGINEERI...
bySaranyaShanmugam28
 
EEE 2187.......................... .pptx
bytalenthidden271
 
Electronics: Semiconductors and diodes s
byMajidAlhemyari
 
BEEE Unit IV.power point presentation notes
byPjeyaprakash2
 
Semiconductor diodes
bypriyanka singh
 
Basic electronics
byAmit Khowala
 
Basic electronics
byCHINCHU THOMAS
 

Recently uploaded

PPTX
Lubrication Neglect Causes More Downtime Than AI Ever Will Why Maintenance Fu...
byMaintWiz Technologies Private Limited
 
PPTX
Basic Volume Mass Relationship and unit weight as function of volumetric wate...
byMahmoodKhalid11
 
PDF
Day 01- Basic Knowledge for LPG system design.pdf
bykmas1612
 
PPTX
Electronics Device - EC25C01 - Semiconductor: Types, Conductivity,
byMathavan N
 
PDF
JVM in the Age of AI: 2026 Edition - Deep Dive
byArtur Skowroński
 
PPTX
Speech to Text with Tone Correction.pptx
bysurajkanojiya13
 
PDF
3.2 Log & antilog amplifiers.pdf analog electronics
byanu200770
 
PPTX
Unit-2: Network Models--OSI Reference Model, TCP/IP Reference Model
bySuvarnaSharma5
 
PDF
Chris Elwell Woburn - An Experienced IT Executive
byChris Elwell Woburn
 
PDF
Basic Thumb rule For switchgear Selection
byVimal Kr
 
PPTX
Unit 3_statistical methods in data science.pptx
byVidyaranichougule
 
PPTX
Optimized access control techniques in Cloud Computing with Security and Scal...
bymareswariesteru
 
PPTX
Origin of Soil and Grain Size with Introduction and explanation
byMahmoodKhalid11
 
PPTX
Theory to Practice of Unsaturated Soil Mechanics-1.pptx
byMahmoodKhalid11
 
PPT
L9_Statistical Evaluation of Measurement Data.ppt
bykohila15
 
PDF
comprehensive analysis of cross-chain bridges in the DeFi - Garima Singh
byGarima Singh
 
PDF
Decision-Support-Systems-and-Decision-Making-Processes.pdf
byPatankarNikhil
 
PPTX
Integrating Azure Event Services_ Event Grid, Event Hubs, and Service Bus.pptx
byADITYASHARMA423788
 
PPTX
The Most Controversial TPM Debate in Maintenance Today Checklist TPM vs Outco...
byMaintWiz Technologies Private Limited
 
PDF
Manual de instalacion de notifire NFS320
byMarcoPolitoPerez
 
Lubrication Neglect Causes More Downtime Than AI Ever Will Why Maintenance Fu...
byMaintWiz Technologies Private Limited
 
Basic Volume Mass Relationship and unit weight as function of volumetric wate...
byMahmoodKhalid11
 
Day 01- Basic Knowledge for LPG system design.pdf
bykmas1612
 
Electronics Device - EC25C01 - Semiconductor: Types, Conductivity,
byMathavan N
 
JVM in the Age of AI: 2026 Edition - Deep Dive
byArtur Skowroński
 
Speech to Text with Tone Correction.pptx
bysurajkanojiya13
 
3.2 Log & antilog amplifiers.pdf analog electronics
byanu200770
 
Unit-2: Network Models--OSI Reference Model, TCP/IP Reference Model
bySuvarnaSharma5
 
Chris Elwell Woburn - An Experienced IT Executive
byChris Elwell Woburn
 
Basic Thumb rule For switchgear Selection
byVimal Kr
 
Unit 3_statistical methods in data science.pptx
byVidyaranichougule
 
Optimized access control techniques in Cloud Computing with Security and Scal...
bymareswariesteru
 
Origin of Soil and Grain Size with Introduction and explanation
byMahmoodKhalid11
 
Theory to Practice of Unsaturated Soil Mechanics-1.pptx
byMahmoodKhalid11
 
L9_Statistical Evaluation of Measurement Data.ppt
bykohila15
 
comprehensive analysis of cross-chain bridges in the DeFi - Garima Singh
byGarima Singh
 
Decision-Support-Systems-and-Decision-Making-Processes.pdf
byPatankarNikhil
 
Integrating Azure Event Services_ Event Grid, Event Hubs, and Service Bus.pptx
byADITYASHARMA423788
 
The Most Controversial TPM Debate in Maintenance Today Checklist TPM vs Outco...
byMaintWiz Technologies Private Limited
 
Manual de instalacion de notifire NFS320
byMarcoPolitoPerez
 

ppt pdf_merged.pdf for 1st year BEE ELECTRONICS SUBJECT

  • 1.
    Basic Electronics • Whyto learn Electronics? • What is Electronics? • Application/Use of Electronics Lecture 0
  • 2.
    Why we haveto learn Electronics?
  • 3.
  • 4.
    What is Electronics? •Electronics is a field of science and engineering which deals with electronic devices and there utilization Deals – related Utilization – Use
  • 5.
    Applications of Electronics 1)Communication There are two types of Communication a. Wired Communication – eg. Telegraphy, Telephone
  • 6.
    Applications of Electronics 1)Communication a. Wireless Communication – eg. Smartphone, TV Broadcasting, Satellite Communication There are two types of Communication
  • 7.
    Applications of Electronics 2)Defence • The most important application is RADAR (Radio Detection And Ranging) • By using RADAR, Exact Position of enemy aircraft can be found out.
  • 8.
    Applications of Electronics 3)Industrial Application Under Industrial Applications, Electronics Circuits are used to control the thickness quality weight and moisture content Thickness, Quality, Weight, Moisture
  • 9.
    Applications of Electronics 4)Medical Science 1) X-Ray – To take pictures of interracial bone structure 2) ECG – To Find condition of heart 3) Oscillographs – To check muscle action
  • 10.
    Basic Electronics Lecture 2 1)What is Semiconductor? 3) Types of Semiconductor 2) Uses of Semiconductor
  • 11.
    Semiconductor Semiconductor • A semiconductoris a type of material that has properties in between those of a conductor and an insulator • Semiconductor can only pass electricity under certain condition Conductor – Which can pass electricity Insulator – Which cannot pass electricity
  • 12.
    Uses Of Semiconductor Integratedcircuits(IC) Transistors Diodes
  • 13.
  • 14.
    Intrinsic Semiconductor • IntrinsicSemiconductor are pure semiconductor formed by tetravalent atoms Pure – clean (without impurity) Tetravalent Element having valency four Four Valency 2 Valency– Divalent, 3 Valency– Trivalent, 5 Valency- Pentavalent • E.g. Silicon, Germanium • Tretravalent atom has four valence electrons
  • 15.
    Intrinsic Semiconductor (Crystal LatticeStructure) Si Si Si Si Si Intrinsic Semiconductor Room Temperature Entered Heat Hole Free Electrons (Bounded) Electrons – Sufficient Energy Due to excessive free electrons conductivity increases and resistivity decrease
  • 16.
    1) The figureshows crystal lattice structure of silicon atom. 2) Each silicon atom forms a covalent bond with the other silicon atom present in the neighboring areas. 3) At the room temperature there electrons are bounded to each other. 4) But entered heat is applied, there electrons gain sufficient energy and leaves its position and at that point of time a valency of electrons is created which is known as hole. 5) With the increasing temperature electron leaves its position and gets for causing conductivity increased and resistance decreases
  • 17.
    Basic Electronics Lecture 3 •Extrinsic Semiconductor • Types of Extrinsic Semiconductor
  • 18.
    Extrinsic Semiconductor Extrinsic semiconductorsare impure form of semiconductor material formed by either pentavalent or trivalent impurity into a pure semiconductor atom Pure – clean (without impurities) Pentavalent Five Valency - Elements having valency 5 Trivalent - Element having valency 3
  • 19.
    Extrinsic Semiconductor When theimpurities are added to the intrinsic semiconductor, it becomes an extrinsic semiconductor The process of adding impurties are called doping Types Extrinsic Semiconductor N-Type Semiconductor P-Type Semiconductor
  • 20.
    N-Type Semiconductor • N-TypeSemiconductor are formed by adding a small amount of pentavalent impurity to the pure silicon or germanium • The Pentavalent element is the one which has five valence electrons • Examples are Phosphorus, Antimony • It is also known as Donor Impurity due to presence of extra free electrons
  • 21.
    N-Type Semiconductor(Crystal LatticeStructure) P Si Si Si Si Room Temperature (Structure) External heat Free Electron (Negatively charged) Due to hole formation in covalent bond conductivity increased
  • 22.
    N-Type Semiconductor • Herewe have used phosphorus atom to be added into a pure silicon structure • Group of 5 electrons contain one covalent bond and there will be one free electron • So the four electrons of phosphorus form four covalent bond with its neighboring silicon atom but still a free electron is left which is unbounded • Further, when external heat is provided, electron leaves the covalent bond, leaves its position vacant thereby causing a hole • It increases the conductivity thereby creating a hole
  • 23.
    P-Type Semiconductor • P-TypeSemiconductor are formed by adding a small amount of trivalent impurity to the pure silicon or germanium • The materials having 3 valence electron per atom known as trivalent materials Trivalent – Elements having valency 3 • Ex. Boron, Gallium, Indium
  • 24.
    P-Type Semiconductor B Si Si Si Si Room Temperature (Structure) Externalheat Free Electron (Negatively charged) This hole will make the semiconductor a P-type semiconductor
  • 25.
    P-Type Semiconductor • Asshown in the figure, when a boron atom is added to the silicon atom, its 3 valence electrons will form covalent bond with the valence electron of 3 neighboring silicon atom • The fourth covalent bond remains incomplete as the boron atom has only 3 valence electrons • The resulting vacancy is called a Hole and it is represented by a small circle (o) • A hole is the positively charged as it represents the absence of a negative charge • This hole will make the semiconductor a P-type semiconductor
  • 26.
    Basic Electronics Lecture 4 •What is Diode? • What is P-N Junction? • Formation of Diffussion process • Formation of Dipletion Layer
  • 27.
    Diode • Diode isan electronic device with two element namely Anode and Cathode
  • 28.
    P-N Junction • AnP-type Semiconductor and N-type Semiconductor are joined together with the help of a fabrication technique to form a P-N Junction P N Majority charge Minority charge Majority charge Minority charge Junction
  • 29.
  • 30.
  • 31.
    Formation of diffusionprocess • In order to create p-n junction diode, we have to take one P-type and one N-type semiconductor and joint it. • The tendency of electrons is to move towards the positive side • In P-type semiconductor majority charge carriers are holes and electrons are the minority charge carriers • In N-type semiconductor electrons are the majority charge carriers and holes are the minority charge carriers • The electrons will move towards the hole and diffuses itself while the holes will move towards the electrons and diffuses itself. The process is called diffusion process.
  • 32.
    Formation of DepletionLayer P N + - - - - + + + -ve immobile ions +ve immobile ions Depletion Layer
  • 33.
    Formation of DepletionLayer • The free electrons from N-side will defuse into the P-side and recombine the holes present there. • Each electron will leave behind a positive immobile ion into the N- side and each hole will defuses into the N-side will leave behind a negative immobile ion • Due to this recombination process, a large no.of positive ions accumulate near the junction on the n-side and a large no.of negative immobile ions will accumulate on the p-side near the junction • The negatively charged ions on the p-side will start repuling the electrons and after some time the diffusion will stop completely
  • 34.
    Formation of DepletionLayer • The p-n junction is in the state of equilibrium • The shaded region on both sides of the junction contains only immobile ions and no free charge carriers such as electrons or holes • These region is called as depletion region • The width of the depletion region is 0.5-1 mm (micrometer)
  • 35.
    Basic Electronics Lecture 5 •Biasing of P-N Junction Diode • Forward Biasing • Reverse Biasing
  • 36.
    Biasing of P-NJunction Diode P N + - - - - + + + -ve immobile ions +ve immobile ions Biasing Potential Barrier (Not allows the Charge carriers to Diffuse)
  • 37.
    Biasing of P-NJunction Diode • When the P-N Junction is formed the depletion region gets created and the movement of electrons and holes stops • The current flowing through an unbiased p-n junction is 0. • To make the current flow , we have to biase the p-n junction diode • Biasing is the process of applying external supply to the semiconductor diode • Types of Biasing – 1. Forward Biasing 2. Reversed Biasing
  • 38.
    Forward Biasing P N + - - - - + + + DepletionLayer (Thickness) Potential Barrier Resistance Current
  • 39.
    • If theP region is connected to the Positive terminal of the battery and N region is connected to the Negative terminal of the battery, then the Biasing is said to be Forward Biasing • Due to the negative terminal of the battery connected to the N region the free electrons from N side will move towards the P-side • With increasing in the external voltage, more and more number of holes and electrons starts travelling towards the junction Forward Biasing • The holes will start converting the negative ions into neutral atoms and the electrons will convert the positive ions into neutral atoms • As a result, the width of the depletion region will reduce
  • 40.
    Reversed Biasing P N + - - - - + + + DepletionLayer (Thickness) Potential Barrier Resistance Current
  • 41.
    • If theP region is connected to the Negative terminal of the battery and N region is connected to the Positive terminal of the battery, then the Biasing is said to be Reverse Biasing • The reverse current will flow from cathode to anode of the diode • When the diode is reverse biased, the holes in the P region are attracted towards the negative terminal of battery and electrons on the N region are attracted towards the positive terminal of battery • Due to the movement of electrons and holes away from the junction, width of the depletion region increases Reverse Biasing
  • 42.
    Basic Electronics Lecture 6 •Zener Diode • Forward and Reverse Biasing • P-N Junction Vs. Zener Diode
  • 43.
    Why to UseZener Diode? P N P-N Junction Diode Ib Vb 0 Breakdown Voltage Neutral Atoms are present Due to this high no. of electrons, heat is generated and p-n junction gets destroyed Minority Charge
  • 44.
    Zener Diode • ZenerDiode is a special purpose p-n junction diode • Its Construction is similar to p-n junction diode • Its is designed to operate in Zener breakdown region • Zener diode acts like normal p-n junction diode under forward biased condition • Symbol - Anode Cathode
  • 45.
    Zener Diode • Itis a two terminal device and the terminals are Anode and Cathode • The arrowhead in the symbol points toward the direction of the current flows through the Zener diode it is in forward biased
  • 46.
    Forward Biasing inZener Diode Cut-in Voltage VF IF When the Anode of the Zener Diode is connected to the positive terminal of the battery and Cathode is connected to the negative terminal of the battery then the Zener diode is said to be Forward biased
  • 47.
    Reverse Biasing inZener Diode P N Neutral Atoms are present Iz Vz 0 Breakdown Voltage Zener Diode
  • 48.
    Reverse Biasing inZener Diode When the Cathode of the Zener Diode is connected to the positive terminal of the battery and Anode is connected to the negative terminal of the battery then the Zener diode is said to be Reverse biased
  • 49.
    Reverse Biasing inZener Diode • As we increase the reverse voltage initially a small amount of current will flow. • This current flows due to the thermally generated minority carriers • At a certain value of reverse voltage, the reverse current will increase suddenly • These breakdown voltage is called as Zener breakdown voltage which is denoted by Vz
  • 50.
    Basic Electronics Lecture 7 •Rectifier • Full Wave Rectifier • Half Wave Rectifier
  • 51.
    Rectifier • Rectifier isan electronic device which is used for converting AC Voltage/Current into DC Voltage/Current 220V AC – 5V DC • The process of converting AC Voltage/Current into DC Voltage or Current is called as Rectification • There are 2 Types of Rectifier 1. Half Wave Rectifier 2. Full Wave Rectifier
  • 52.
    Components Used InRectifier AC Components Names Use P-N Junction Diode Transformer (Stepdown) To pass current in only one direction Step-Down the AC Voltage Load Resistor To Output smooth and stable voltage 220V AC supply To input the voltage
  • 53.
    Some Basic concept •AC direction changes hence changes polarity of transformer AC Primary Coil (Input Voltage) Secondary coil (Output) AC Voltage (Input) 0 π 2π
  • 54.
    Half-Wave Rectifier AC AC Voltage(Input) Output Current Positive Half cycle – A-D-RL-B Negative Half Cycle – No current flows Because p-n junction gets in reverse biased A B D RL CT 0 π 2π 3π 0 π 2π 3π
  • 55.
    Half-Wave Rectifier • InHalf-wave Rectifier, the rectifier is ON only during one half cycle of AC supply • So the Output is produced only in that half cycle • Figure shows a Half-wave Rectifier which is connected to the step-down transformer RL is the Load Resistor • In the positive half cycle (0-π) of the AC supply, the secondary voltage VAB is positive that is A is positive with respect to B • Hence the diode is forward bias and starts conducting • As the diode starts conducting the secondary voltage VAB appears across a load resistance
  • 56.
    Half-Wave Rectifier • Inthe negative half cycle (π-2π) of the AC supply, the secondary voltage VAB is negative that is A is negative with respect to B • Hence, the diode is Reverse bias. The load is disconnected from the battery • Hence the load voltage and load current both are zero
  • 57.
    Full-Wave Rectifier AC AC Voltage(Input) Output Current Positive Half cycle (A positive, B Negative) – A-D1-C1-RL-CT A B D1 CT D2 RL C1 0 π 2π 3π 0 π 2π 3π Negative Half cycle (B positive, A Negative) – B-D2-C1-RL-CT
  • 58.
    Full-Wave Rectifier • Afull-wave rectifier is a Rectifier which requires two or four diodes and it conducts for both half cycles • A center tapped transformer consist of a step-down center tapped transformer T1, 2 diodes and a load resistor RL • Due to the center tapped secondary transformer, D1 is forward biased and D2 is reversed biased • The load current starts flowing from A to D1 then load resistor RL back to the CT • In the negative half cycle, of the AC supply, B is positive with respect to A
  • 59.
    Full-Wave Rectifier • HereD1 is reverse biased and D2 is forward biased • So D1 acts as an open circuited switch and D2 carries the entire load current • The direction of load current will be B-D2-C1-RL-CT
  • 60.
    Basic Electronics Lecture 8 BridgeRectifier - • Positive Half Cycle • Negative Half Cycle
  • 61.
    Bridge Rectifier V1 A B CT RL D1 D2 D3 D4 AC Voltage(Input) 0 π 2π 3π Output Current 0 π 2π 3π
  • 62.
    Bridge Rectifier • BridgeRectifier rectifies the complete or full wave form • It consists of a Transformer(CT), four diode (D1, D2, D3, D4) and Load Resistance RL • Here V1 is the source voltage which is 230V, 50Hz • V2 is the input voltage given to the Rectifier
  • 63.
    Positive Half Cycle V1 A B CT RL D1 D2 D3 D4 ACVoltage (Input) 0 π 2π 3π Output Current 0 π 2π 3π D1,D3 D1,D3 Positive Half cycle (A+, B-) :- A-D1-RL-D3-CT
  • 64.
    Bridge Rectifier –Positive Half Cycle • During the positive Half cycle of the AC supply, A is positive with respect to B • Here D1 and D3 are in forward biased and D2 and D4 are in Reversed biased • Here, Load current will flow from A-D1-RL-D3-CT
  • 65.
    Negative Half Cycle V1 A B CT RL D1 D2 D3 D4 ACVoltage (Input) 0 π 2π 3π Output Current 0 π 2π 3π D2,D4 Negative Half cycle (A-, B+) :- B-D2-RL-D4-CT
  • 66.
    Bridge Rectifier –Negative Half Cycle • During the positive Half cycle of the AC supply, B is positive with respect to A • Here D2 and D4 are in forward biased and D1 and D3 are in Reversed biased • Here, Load current will flow from B-D2-RL-D4-CT
  • 67.
  • 68.
    Need of Filters •Filter can be either construct by Capacitor or Inductor, when the Rectifier has its highest value it charges itself and when it has its value 0, Filter provides the output to Load • Filter is the electronic component used to remove the AC component present in the rectifier output and allows the DC component to reach load Definition :
  • 69.
    Filters Ki Story AlternatingOutput from Rectifier Filters Pure Direct Current (DC) • Types of Filters :- 1) L Filter or Series Inductor Filter 2) C Filter or Shunt Capacitive Filter
  • 70.
    C Filter orShunt Capacitive Filter Full Wave Rectifier RL C Charging Discharge AC • This Filter consist of one capacitor connected in parallel with the load i.e. why, it is known as shunt capacitor Filter. The circuit diagram of shunt capacitive filter is given above
  • 71.
    C Filter orShunt Capacitive Filter • When the voltage wave increases from 0 to high value(max value), capacitor gets charged • When the voltage wave decreases from high value(min value) to 0, stored voltage in capacitor is transferred to Load and this cycle keeps on going. • By this, Load will get smooth output
  • 72.
    L Filter orSeries Inductor Filter Full Wave Rectifier RL L Charging Discharge AC • This Filter consist of one inductor connected in series with the load i.e. why, it is known as Series Inductor Filter. The circuit diagram of series inductor filter is given above
  • 73.
    L Filter orSeries Inductor Filter • When the voltage wave increases from 0 to high value(max value), inductor gets charged • When the voltage wave decreases from high value(max value) to 0, inductor changes its polarity and provide the stores voltage to the Load and this cycle keeps on going • By this, Load will get smooth output
  • 74.
    Basic Electronics Lecture 10 •Bipolar Junction Transistor • NPN Transistor • PNP Transistor
  • 75.
    Bipolar Junction Transistor(BJT) • The device is called as Bipolar because the conduction takes place due to electrons and holes • The name Transistor is the combination of 2 words i.e. Transfer and Resistor • It transfers the input signal current from low resistance circuit to high resistance circuit • Types and symbol of BJT are of two types 1) PNP Transistor 2) NPN Transistor
  • 76.
    Bipolar Junction Transistor(BJT) P P N N P P N N PNP NPN P N P N N P Emitter Collector Base Base Collector Emitter
  • 77.
    Bipolar Junction Transistor(BJT) • The arrow is always placed on the emitter terminal and the arrow direction indicated the direction of current flow of emitter current
  • 78.
    Construction of PNPTransistor P N P Emitter Collector Base IB IC IE
  • 79.
    Construction of PNPTransistor • The PNP Transistor is formed by sandwiching a thin N-Type semiconductor between two P-type semiconductor • Base comes in between Emitter and Collector region • Base is always thin and lightly doped layer • Emitter and collector layers are much wider than the base and are heavily doped • A Transistor has two P-N junctions :- 1. Emitter Junction 2. Collector Junction • In PNP Transistor, current flows through holes
  • 80.
    Working of PNPTransistor • In PNP Transistor, when emitter junction is forward biased, holes present in emitter region gets pushed towards the electrons present in base region as it is connected to negative terminal of battery (IE) • As Base is less doped compared to Emitter region only few holes can diffuse the electrons • This phenomena generates the Base current (IB) • Rest of the holes gets collected towards collector and moved to negative terminal connected to the collector as collector current (IC)
  • 81.
    Construction of NPNTransistor N P N Emitter Collector Base IB IE IC
  • 82.
    Construction of NPNTransistor • The NPN Transistor is formed by sandwiching a thin P-Type semiconductor between two N-type semiconductor • Base comes in between Emitter and Collector region • Base is always thin and lightly doped layer • Emitter and collector layers are much wider than the base and are heavily doped • A Transistor has two P-N junctions :- 1. Emitter Junction 2. Collector Junction • In NPN Transistor, current flows through electrons
  • 83.
    Working of NPNTransistor • The NPN Transistor, when emitter junction is forward biased, electrons present in Emitter region gets pushed towards the holes present in base region as it is connected to positive terminal of battery (IE) • As Base is less doped compared to Emitter region only few electrons can diffuse the holes • This phenomena generates the Base current (IB) • Rest of the electrons gets collected towards collector and moved to positive terminal connected to the collector as collector current (IC)
  • 84.
  • 85.
    Configurations • The wayor method of connecting transistor in circuit is called as Configuration • There are three types of configurations :- 1) CB configuration 2) CE configuration 3) CC configuration
  • 86.
    Golden Points • Basecannot be output • Collector cannot be input • Input side will be Forward Biased • Output side will be Reversed Biased • IE = IB+IC
  • 87.
    Common Base Configuration + + - - NN P E B C • Base can not be output • Collector cannot be input VBE VCB IE IC IB • IE = IB+IC Transfer Characteristics α = IC / IE
  • 88.
    Common Emitter Configuration ++ - - N P E B C • Base can not be output • Collector cannot be input VBE VCE IE IC IB N • IE = IB+IC Transfer Characteristics β = IC / IB
  • 89.
    Common Collector Configuration ++ - - N P E B C • Base can not be output • Collector cannot be input VBC VEC IE IC IB N • IE = IB+IC Transfer Characteristics Ɣ = IE / IB
  • 90.
    Basic Electronics Lecture 13 •Active Region • Cut-off Region • Saturation Region
  • 91.
    Active Region N PN E B C BE – Forward Biased CB –Reversed Biased VB > VE VC > VB Active region of transistor work as Amplifier
  • 92.
    Active Region N PN E B C BE – Forward Biased CB –Reversed Biased VBE < 0 VB > VE VCB > 0 VC > VB Cut-off Region N P N E B C BE –Reversed Biased CB –Reversed Biased VB < VE VC > VB Cut-off region of transistor work as OFF Switch
  • 93.
    Saturation Region BE –Forward Biased CB – Forward Biased VB > VE VC < VB E B C In the case of Saturation region of transistor work as ON Switch N P N
  • 94.
    Field Effect Transistor BasicElectronics 13 FET Drain Gate Source • BJT Vs. FET • Applications • Types
  • 95.
    BJT Vs. FET •IC depends on IB • ID depends on VGS • Current Control Device • Voltage Control Device • Bipolar Device • Unipolar Device e-  N-channel holes  P-channel
  • 96.
    Applications of FET •Switch • Amplifier
  • 97.
  • 98.
    Working of JFET BasicElectronics 14 • Introduction • Construction • Working • Characteristics (Diagram)
  • 99.
    • N channel •Gate, Source, Drain • VGS, ID • FET is Voltage controlled device • 2 PN junction • 2 Depletion Region
  • 100.
    P P N Drain Gate Source • VGS= 0V 0V + - 5V 5V 0V 4V 1V e-↑ N-Channel ID
  • 102.
  • 104.
    • Ohmic Region– In this region, Drain current increases linearly with increasing voltage of drain-to-source voltage following Ohm’s Law • Saturation Region – In this region, Drain current remains constant. • Pinch-off Voltage – The value of VDS at which the Drain Current (ID) saturates is Pinch-off Voltage • Breakdown Region – The region in which the value of Drain current (ID) drastically increases due to avalanche effect is Breakdown region
  • 105.
    Basic Electronics 16 MOSFET N N P Substrate D SG • Classification • Construction • Working • Characteristics
  • 107.
  • 108.
  • 109.
    What is Transducer? •Transducer is the device which converts one form of energy to another form of energy + Transduction Elements Physical Quantity Output Signal • Process of conversion of energy is Transduction • Conversion is done by Sensing and Transducing Elements Sensor
  • 110.
    Need of Transducer? •It is quite difficult to measure the magnitude of these quantities directly • But if these physical forces are converted into electrical signal, it is way much easier to measure it Electrical Signal (Quantity)
  • 111.