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1. Basic Electronics
• Why to learn Electronics?
• What is Electronics?
• Application/Use of Electronics
Lecture 0

2. Why we have to learn
Electronics?

3. Hardware
(Electronics)
Software
Eg.Browser,App

4. What is Electronics?
• Electronics is a field of science and engineering
which deals with electronic devices and there
utilization
Deals – related
Utilization – Use

5. Applications of Electronics
1) Communication
There are two types of Communication
a. Wired Communication – eg. Telegraphy, Telephone

6. Applications of Electronics
1) Communication
a. Wireless Communication – eg. Smartphone, TV Broadcasting,
Satellite Communication
There are two types of Communication

7. Applications of Electronics
2) Defence
• The most important application is RADAR (Radio Detection And
Ranging)
• By using RADAR, Exact Position of enemy aircraft can be found out.

8. Applications of Electronics
3) Industrial Application
Under Industrial Applications, Electronics Circuits are used to control
the thickness quality weight and moisture content
Thickness, Quality,
Weight, Moisture

9. Applications of Electronics
4) Medical Science
1) X-Ray – To take pictures of interracial bone structure
2) ECG – To Find condition of heart
3) Oscillographs – To check muscle action

10. Basic Electronics
Lecture 2
1) What is Semiconductor?
3) Types of Semiconductor
2) Uses of Semiconductor

11. Semiconductor
Semiconductor
• A semiconductor is a type of material that has properties
in between those of a conductor and an insulator
• Semiconductor can only pass electricity under certain
condition
Conductor – Which can pass electricity
Insulator – Which cannot pass electricity

12. Uses Of Semiconductor
Integrated circuits(IC) Transistors Diodes

13. Types of Semiconductor
Intrinsic
Semiconductor
Extrinsic
Semiconductor

14. Intrinsic Semiconductor
• Intrinsic Semiconductor are pure semiconductor formed
by tetravalent atoms
Pure – clean (without impurity)
Tetravalent Element having valency four
Four Valency
2 Valency– Divalent, 3 Valency– Trivalent, 5 Valency- Pentavalent
• E.g. Silicon, Germanium
• Tretravalent atom has four valence electrons

15. Intrinsic Semiconductor
(Crystal Lattice Structure)
Si
Si
Si
Si
Si
Intrinsic Semiconductor
Room
Temperature
Entered Heat
Hole
Free
Electrons
(Bounded)
Electrons – Sufficient Energy
Due to excessive free
electrons conductivity
increases and resistivity
decrease

16. 1) The figure shows crystal lattice structure of silicon atom.
2) Each silicon atom forms a covalent bond with the other
silicon atom present in the neighboring areas.
3) At the room temperature there electrons are bounded to
each other.
4) But entered heat is applied, there electrons gain
sufficient energy and leaves its position and at that point of
time a valency of electrons is created which is known as
hole.
5) With the increasing temperature electron leaves its
position and gets for causing conductivity increased and
resistance decreases

17. Basic Electronics
Lecture 3
• Extrinsic Semiconductor
• Types of Extrinsic Semiconductor

18. Extrinsic Semiconductor
Extrinsic semiconductors are impure form of semiconductor
material formed by either pentavalent or trivalent impurity
into a pure semiconductor atom
Pure – clean (without impurities)
Pentavalent
Five Valency
- Elements having valency 5
Trivalent - Element having valency 3

19. Extrinsic Semiconductor
When the impurities are added to the intrinsic
semiconductor, it becomes an extrinsic semiconductor
The process of adding impurties are called doping
Types Extrinsic Semiconductor
N-Type
Semiconductor
P-Type
Semiconductor

20. N-Type Semiconductor
• N-Type Semiconductor are formed by adding a small
amount of pentavalent impurity to the pure silicon or
germanium
• The Pentavalent element is the one which has five valence
electrons
• Examples are Phosphorus, Antimony
• It is also known as Donor Impurity due to presence of extra
free electrons

21. N-Type Semiconductor(Crystal Lattice Structure)
P
Si
Si
Si
Si
Room Temperature
(Structure)
External heat
Free Electron
(Negatively charged)
Due to hole formation
in covalent bond
conductivity
increased

22. N-Type Semiconductor
• Here we have used phosphorus atom to be added into a pure
silicon structure
• Group of 5 electrons contain one covalent bond and there will be
one free electron
• So the four electrons of phosphorus form four covalent bond
with its neighboring silicon atom but still a free electron is left
which is unbounded
• Further, when external heat is provided, electron leaves the
covalent bond, leaves its position vacant thereby causing a hole
• It increases the conductivity thereby creating a hole

23. P-Type Semiconductor
• P-Type Semiconductor are formed by adding a small
amount of trivalent impurity to the pure silicon or
germanium
• The materials having 3 valence electron per atom known as
trivalent materials
Trivalent – Elements having valency 3
• Ex. Boron, Gallium, Indium

24. P-Type Semiconductor
B
Si
Si
Si
Si
Room Temperature
(Structure)
External heat
Free Electron
(Negatively charged)
This hole will make
the semiconductor
a P-type
semiconductor

25. P-Type Semiconductor
• As shown in the figure, when a boron atom is added to the
silicon atom, its 3 valence electrons will form covalent bond
with the valence electron of 3 neighboring silicon atom
• The fourth covalent bond remains incomplete as the boron atom
has only 3 valence electrons
• The resulting vacancy is called a Hole and it is represented by
a small circle (o)
• A hole is the positively charged as it represents the absence of a
negative charge
• This hole will make the semiconductor a P-type semiconductor

26. Basic Electronics
Lecture 4
• What is Diode?
• What is P-N Junction?
• Formation of Diffussion process
• Formation of Dipletion Layer

27. Diode
• Diode is an electronic device with two element namely
Anode and Cathode

28. P-N Junction
• An P-type Semiconductor and N-type Semiconductor are
joined together with the help of a fabrication technique to form
a P-N Junction
P N
Majority
charge
Minority
charge
Majority
charge
Minority
charge
Junction

29. P-N Junction
Diode symbol
P N

30. Formation of diffusion process
P N

31. Formation of diffusion process
• In order to create p-n junction diode, we have to take one P-type and
one N-type semiconductor and joint it.
• The tendency of electrons is to move towards the positive side
• In P-type semiconductor majority charge carriers are holes and
electrons are the minority charge carriers
• In N-type semiconductor electrons are the majority charge carriers
and holes are the minority charge carriers
• The electrons will move towards the hole and diffuses itself while
the holes will move towards the electrons and diffuses itself. The
process is called diffusion process.

32. Formation of Depletion Layer
P N
+
-
-
-
-
+
+
+
-ve
immobile
ions
+ve
immobile
ions
Depletion
Layer

33. Formation of Depletion Layer
• The free electrons from N-side will defuse into the P-side and
recombine the holes present there.
• Each electron will leave behind a positive immobile ion into the N-
side and each hole will defuses into the N-side will leave behind a
negative immobile ion
• Due to this recombination process, a large no.of positive ions
accumulate near the junction on the n-side and a large no.of negative
immobile ions will accumulate on the p-side near the junction
• The negatively charged ions on the p-side will start repuling the
electrons and after some time the diffusion will stop completely

34. Formation of Depletion Layer
• The p-n junction is in the state of equilibrium
• The shaded region on both sides of the junction contains only
immobile ions and no free charge carriers such as electrons or holes
• These region is called as depletion region
• The width of the depletion region is 0.5-1 mm (micrometer)

35. Basic Electronics
Lecture 5
• Biasing of P-N Junction Diode
• Forward Biasing
• Reverse Biasing

36. Biasing of P-N Junction Diode
P N
+
-
-
-
-
+
+
+
-ve
immobile
ions
+ve
immobile
ions
Biasing
Potential Barrier
(Not allows the
Charge carriers to
Diffuse)

37. Biasing of P-N Junction Diode
• When the P-N Junction is formed the depletion region gets
created and the movement of electrons and holes stops
• The current flowing through an unbiased p-n junction is 0.
• To make the current flow , we have to biase the p-n
junction diode
• Biasing is the process of applying external supply to the
semiconductor diode
• Types of Biasing –
1. Forward Biasing
2. Reversed Biasing

38. Forward Biasing
P N
+
-
-
-
-
+
+
+
Depletion Layer
(Thickness)
Potential Barrier
Resistance
Current

39. • If the P region is connected to the Positive terminal of the battery
and N region is connected to the Negative terminal of the battery,
then the Biasing is said to be Forward Biasing
• Due to the negative terminal of the battery connected to the N
region the free electrons from N side will move towards the P-side
• With increasing in the external voltage, more and more number of
holes and electrons starts travelling towards the junction
Forward Biasing
• The holes will start converting the negative ions into neutral atoms
and the electrons will convert the positive ions into neutral atoms
• As a result, the width of the depletion region will reduce

40. Reversed Biasing
P N
+
-
-
-
-
+
+
+
Depletion Layer
(Thickness)
Potential Barrier
Resistance
Current

41. • If the P region is connected to the Negative terminal of the
battery and N region is connected to the Positive terminal of the
battery, then the Biasing is said to be Reverse Biasing
• The reverse current will flow from cathode to anode of the diode
• When the diode is reverse biased, the holes in the P region are
attracted towards the negative terminal of battery and electrons
on the N region are attracted towards the positive terminal of
battery
• Due to the movement of electrons and holes away from the
junction, width of the depletion region increases
Reverse Biasing

42. Basic Electronics
Lecture 6
• Zener Diode
• Forward and Reverse Biasing
• P-N Junction Vs. Zener Diode

43. Why to Use Zener Diode?
P N
P-N Junction Diode
Ib
Vb
0
Breakdown
Voltage
Neutral Atoms are present
Due to this high no. of electrons, heat is
generated and p-n junction gets destroyed
Minority
Charge

44. Zener Diode
• Zener Diode is a special purpose p-n junction diode
• Its Construction is similar to p-n junction diode
• Its is designed to operate in Zener breakdown region
• Zener diode acts like normal p-n junction diode under
forward biased condition
• Symbol -
Anode Cathode

45. Zener Diode
• It is a two terminal device and the terminals are Anode and
Cathode
• The arrowhead in the symbol points toward the direction of
the current flows through the Zener diode it is in forward
biased

46. Forward Biasing in Zener Diode
Cut-in Voltage
VF
IF
When the Anode of the Zener Diode is connected to the
positive terminal of the battery and Cathode is connected
to the negative terminal of the battery then the Zener
diode is said to be Forward biased

47. Reverse Biasing in Zener Diode
P N
Neutral Atoms are present
Iz
Vz
0
Breakdown
Voltage
Zener Diode

48. Reverse Biasing in Zener Diode
When the Cathode of the Zener Diode is connected to the
positive terminal of the battery and Anode is connected to
the negative terminal of the battery then the Zener diode
is said to be Reverse biased

49. Reverse Biasing in Zener Diode
• As we increase the reverse voltage initially a small amount of
current will flow.
• This current flows due to the thermally generated minority
carriers
• At a certain value of reverse voltage, the reverse current will
increase suddenly
• These breakdown voltage is called as Zener breakdown
voltage which is denoted by Vz

50. Basic Electronics
Lecture 7
• Rectifier
• Full Wave Rectifier
• Half Wave Rectifier

51. Rectifier
• Rectifier is an electronic device which is used for
converting AC Voltage/Current into DC Voltage/Current
220V AC – 5V DC
• The process of converting AC Voltage/Current into DC
Voltage or Current is called as Rectification
• There are 2 Types of Rectifier
1. Half Wave Rectifier
2. Full Wave Rectifier

52. Components Used In Rectifier
AC
Components Names Use
P-N Junction
Diode
Transformer
(Stepdown)
To pass current in
only one direction
Step-Down the AC
Voltage
Load Resistor To Output smooth
and stable voltage
220V AC supply
To input the
voltage

53. Some Basic concept
• AC direction changes hence changes polarity of transformer
AC
Primary Coil
(Input Voltage)
Secondary coil
(Output)
AC Voltage (Input)
0 π 2π

54. Half-Wave Rectifier
AC
AC Voltage (Input)
Output Current
Positive Half cycle – A-D-RL-B
Negative Half Cycle – No current flows
Because p-n junction gets in reverse
biased
A
B
D
RL
CT
0 π 2π 3π
0 π 2π 3π

55. Half-Wave Rectifier
• In Half-wave Rectifier, the rectifier is ON only during one half
cycle of AC supply
• So the Output is produced only in that half cycle
• Figure shows a Half-wave Rectifier which is connected to the
step-down transformer RL is the Load Resistor
• In the positive half cycle (0-π) of the AC supply, the secondary
voltage VAB is positive that is A is positive with respect to B
• Hence the diode is forward bias and starts conducting
• As the diode starts conducting the secondary voltage VAB
appears across a load resistance

56. Half-Wave Rectifier
• In the negative half cycle (π-2π) of the AC supply, the
secondary voltage VAB is negative that is A is negative with
respect to B
• Hence, the diode is Reverse bias. The load is disconnected from
the battery
• Hence the load voltage and load current both are zero

57. Full-Wave Rectifier
AC
AC Voltage (Input)
Output Current
Positive Half cycle (A positive, B
Negative) – A-D1-C1-RL-CT
A
B
D1
CT
D2
RL
C1 0 π 2π 3π
0 π 2π 3π
Negative Half cycle (B positive, A
Negative) – B-D2-C1-RL-CT

58. Full-Wave Rectifier
• A full-wave rectifier is a Rectifier which requires two or four
diodes and it conducts for both half cycles
• A center tapped transformer consist of a step-down center
tapped transformer T1, 2 diodes and a load resistor RL
• Due to the center tapped secondary transformer, D1 is forward
biased and D2 is reversed biased
• The load current starts flowing from A to D1 then load resistor
RL back to the CT
• In the negative half cycle, of the AC supply, B is positive with
respect to A

59. Full-Wave Rectifier
• Here D1 is reverse biased and D2 is forward biased
• So D1 acts as an open circuited switch and D2 carries the entire
load current
• The direction of load current will be B-D2-C1-RL-CT

60. Basic Electronics
Lecture 8
Bridge Rectifier -
• Positive Half Cycle
• Negative Half Cycle

61. Bridge Rectifier
V1
A
B
CT
RL
D1
D2
D3
D4
AC Voltage (Input)
0 π 2π 3π
Output Current
0 π 2π 3π

62. Bridge Rectifier
• Bridge Rectifier rectifies the complete or full wave form
• It consists of a Transformer(CT), four diode (D1, D2, D3, D4) and
Load Resistance RL
• Here V1 is the source voltage which is 230V, 50Hz
• V2 is the input voltage given to the Rectifier

63. Positive Half Cycle
V1
A
B
CT
RL
D1
D2
D3
D4
AC Voltage (Input)
0 π 2π 3π
Output Current
0 π 2π 3π
D1,D3 D1,D3
Positive Half cycle (A+, B-) :-
A-D1-RL-D3-CT

64. Bridge Rectifier – Positive Half Cycle
• During the positive Half cycle of the AC supply, A is positive
with respect to B
• Here D1 and D3 are in forward biased and D2 and D4 are in
Reversed biased
• Here, Load current will flow from A-D1-RL-D3-CT

65. Negative Half Cycle
V1
A
B
CT
RL
D1
D2
D3
D4
AC Voltage (Input)
0 π 2π 3π
Output Current
0 π 2π 3π
D2,D4
Negative Half cycle (A-, B+) :-
B-D2-RL-D4-CT

66. Bridge Rectifier – Negative Half Cycle
• During the positive Half cycle of the AC supply, B is positive
with respect to A
• Here D2 and D4 are in forward biased and D1 and D3 are in
Reversed biased
• Here, Load current will flow from B-D2-RL-D4-CT

67. Basic Electronics
Lecture 9
Filters
Rectifier Output Constant DC

68. Need of Filters
• Filter can be either construct by Capacitor or Inductor,
when the Rectifier has its highest value it charges itself
and when it has its value 0, Filter provides the output to
Load
• Filter is the electronic component used to remove the AC
component present in the rectifier output and allows the
DC component to reach load
Definition :

69. Filters Ki Story
Alternating Output
from Rectifier
Filters
Pure Direct Current
(DC)
• Types of Filters :-
1) L Filter or Series Inductor Filter
2) C Filter or Shunt Capacitive Filter

70. C Filter or Shunt Capacitive Filter
Full
Wave
Rectifier
RL
C
Charging
Discharge
AC
• This Filter consist of one capacitor connected in parallel
with the load i.e. why, it is known as shunt capacitor
Filter. The circuit diagram of shunt capacitive filter is
given above

71. C Filter or Shunt Capacitive Filter
• When the voltage wave increases from 0 to high
value(max value), capacitor gets charged
• When the voltage wave decreases from high value(min
value) to 0, stored voltage in capacitor is transferred to
Load and this cycle keeps on going.
• By this, Load will get smooth output

72. L Filter or Series Inductor Filter
Full
Wave
Rectifier
RL
L
Charging Discharge
AC
• This Filter consist of one inductor connected in series with
the load i.e. why, it is known as Series Inductor Filter. The
circuit diagram of series inductor filter is given above

73. L Filter or Series Inductor Filter
• When the voltage wave increases from 0 to high
value(max value), inductor gets charged
• When the voltage wave decreases from high value(max
value) to 0, inductor changes its polarity and provide the
stores voltage to the Load and this cycle keeps on going
• By this, Load will get smooth output

74. Basic Electronics
Lecture 10
• Bipolar Junction Transistor
• NPN Transistor
• PNP Transistor

75. Bipolar Junction Transistor (BJT)
• The device is called as Bipolar because the conduction takes
place due to electrons and holes
• The name Transistor is the combination of 2 words i.e.
Transfer and Resistor
• It transfers the input signal current from low resistance
circuit to high resistance circuit
• Types and symbol of BJT are of two types
1) PNP Transistor
2) NPN Transistor

76. Bipolar Junction Transistor (BJT)
P P
N N P P
N N
PNP NPN
P
N
P
N
N
P
Emitter
Collector
Base Base
Collector
Emitter

77. Bipolar Junction Transistor (BJT)
• The arrow is always placed on the emitter terminal and the
arrow direction indicated the direction of current flow of
emitter current

78. Construction of PNP Transistor
P N P
Emitter Collector
Base
IB
IC
IE

79. Construction of PNP Transistor
• The PNP Transistor is formed by sandwiching a thin N-Type
semiconductor between two P-type semiconductor
• Base comes in between Emitter and Collector region
• Base is always thin and lightly doped layer
• Emitter and collector layers are much wider than the base
and are heavily doped
• A Transistor has two P-N junctions :-
1. Emitter Junction
2. Collector Junction
• In PNP Transistor, current flows through holes

80. Working of PNP Transistor
• In PNP Transistor, when emitter junction is forward biased,
holes present in emitter region gets pushed towards the
electrons present in base region as it is connected to negative
terminal of battery (IE)
• As Base is less doped compared to Emitter region only few
holes can diffuse the electrons
• This phenomena generates the Base current (IB)
• Rest of the holes gets collected towards collector and moved to
negative terminal connected to the collector as collector
current (IC)

81. Construction of NPN Transistor
N P N
Emitter Collector
Base
IB
IE
IC

82. Construction of NPN Transistor
• The NPN Transistor is formed by sandwiching a thin P-Type
semiconductor between two N-type semiconductor
• Base comes in between Emitter and Collector region
• Base is always thin and lightly doped layer
• Emitter and collector layers are much wider than the base
and are heavily doped
• A Transistor has two P-N junctions :-
1. Emitter Junction
2. Collector Junction
• In NPN Transistor, current flows through electrons

83. Working of NPN Transistor
• The NPN Transistor, when emitter junction is forward biased,
electrons present in Emitter region gets pushed towards the
holes present in base region as it is connected to positive
terminal of battery (IE)
• As Base is less doped compared to Emitter region only few
electrons can diffuse the holes
• This phenomena generates the Base current (IB)
• Rest of the electrons gets collected towards collector and
moved to positive terminal connected to the collector as
collector current (IC)

84. Basic Electronics
Lecture 11

85. Configurations
• The way or method of connecting transistor in circuit is called
as Configuration
• There are three types of configurations :-
1) CB configuration
2) CE configuration
3) CC configuration

86. Golden Points
• Base cannot be output
• Collector cannot be input
• Input side will be Forward Biased
• Output side will be Reversed Biased
• IE = IB+IC

87. Common Base Configuration
+
+
-
-
N N
P
E
B
C
• Base can not be output
• Collector cannot be input
VBE
VCB
IE IC
IB
• IE = IB+IC
Transfer Characteristics
α = IC / IE

88. Common Emitter Configuration
+ +
-
-
N
P
E
B
C
• Base can not be output
• Collector cannot be input
VBE
VCE
IE
IC
IB
N
• IE = IB+IC
Transfer Characteristics
β = IC / IB

89. Common Collector Configuration
+ +
-
-
N
P
E
B
C
• Base can not be output
• Collector cannot be input
VBC
VEC
IE
IC
IB
N
• IE = IB+IC
Transfer Characteristics
Ɣ = IE / IB

90. Basic Electronics
Lecture 13
• Active Region
• Cut-off Region
• Saturation Region

91. Active Region
N P N
E B C
BE – Forward Biased
CB –Reversed Biased
VB > VE
VC > VB
Active region of
transistor work as
Amplifier

92. Active Region
N P N
E B C
BE – Forward Biased
CB –Reversed Biased
VBE < 0
VB > VE
VCB > 0
VC > VB
Cut-off Region
N P N
E B C
BE –Reversed Biased
CB –Reversed Biased
VB < VE
VC > VB
Cut-off region of
transistor work as OFF
Switch

93. Saturation Region
BE – Forward Biased
CB – Forward Biased
VB > VE
VC < VB
E B C
In the case of Saturation
region of transistor work
as ON Switch
N P N

94. Field Effect Transistor
Basic Electronics
13
FET
Drain
Gate
Source
• BJT Vs. FET
• Applications
• Types

95. BJT Vs. FET
• IC depends on IB • ID depends on VGS
• Current Control Device • Voltage Control Device
• Bipolar Device • Unipolar Device
e-  N-channel
holes  P-channel

96. Applications of FET
• Switch
• Amplifier

97. Types of FET

98. Working of JFET
Basic Electronics
14
• Introduction
• Construction
• Working
• Characteristics (Diagram)

99. • N channel
• Gate, Source, Drain
• VGS, ID
• FET is Voltage controlled
device
• 2 PN junction
• 2 Depletion Region

100. P P
N
Drain
Gate
Source
• VGS = 0V
0V
+
-
5V
5V
0V
4V
1V
e-↑
N-Channel
ID

102. Drain Characteristics JFET
Basic Electronics
15

104. • Ohmic Region – In this region, Drain current increases
linearly with increasing voltage of drain-to-source
voltage following Ohm’s Law
• Saturation Region – In this region, Drain current
remains constant.
• Pinch-off Voltage – The value of VDS at which the
Drain Current (ID) saturates is Pinch-off Voltage
• Breakdown Region – The region in which the value of
Drain current (ID) drastically increases due to
avalanche effect is Breakdown region

105. Basic Electronics
16
MOSFET
N N
P
Substrate
D
S G
• Classification
• Construction
• Working
• Characteristics

107. N-channel
N
P
Substrate
D
S G
N
OV
N
P
Substrate
D
S G
N
OV
VGS
VGS
VDS
↓ID

108. Basic Electronics
Lecture 17
Transducer

109. What is Transducer?
• Transducer is the device which converts one form of
energy to another form of energy
+ Transduction
Elements
Physical
Quantity
Output
Signal
• Process of conversion of energy is Transduction
• Conversion is done by Sensing and Transducing Elements
Sensor

110. Need of Transducer?
• It is quite difficult to measure
the magnitude of these
quantities directly
• But if these physical forces are
converted into electrical signal,
it is way much easier to
measure it
Electrical
Signal
(Quantity)

111. Examples of Transducer?
Sound
Energy
Electrical
Energy
Solar
Energy
Electrical
Energy