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Introduction to Electronics
Outline
Classification of material
Electronics Definition
Material used in electronics
Current in semiconductors
N-Type and P Type Semiconductors
PN junction
Introduction to Electronics
Classification of Materials
 Materials are classified into three groups
 Conductors, Semi conductors and Insulators
Conductor
 A material that easily conductors electrical current.
 Copper Silver Aluminum
 Conductors are characterized by with one valance electron very loosely bound
to the atom
Insulators
 Those that does not conduct electrical current under normal conditions.
 Most good insulators are compounds rather then single element material
 having very high resistivity
Introduction to Electronics
What is electronics
 The science of how to control electric energy
 That energy in which electron have fundamental role
 Electronics deal with electrical circuits that involve active electrical
components such as vacuum tubes transistors diodes and IC and associated
passive electrical component
 Active components : Diode transistor and SCR
 Passive Components: Resistors Capacitors and Inductors
Difference b/w active and passive components
 Active components:
 Those devices or components which require external source to their operation
is known as active components
 For example Diode is an active component . So it is required an external
source to its operation
 If we connect a diode in a circuit and connect the circuit to the supply
 The diode will not conduct the current until the supply voltage reaches 0.3 in
case of Germanium or 0.7 in case of silicon
 Active devices or components produce energy in the form of voltage or
current
Active and Passive Components
Passive component
 Those devices or components which do not require external source to their
operation is called passive components
 i.e., Resistors Capacitor inductors
 Passive components
 The passive components do not require external source to their operation
 When a resistor is connect to the supply voltage it starts working
automatically without using a specific voltage
 Passive device store or maintain energy in the form of voltage of current
Linear and Non Linear circuits
 The non linear behavior of active components and their ability to control
electron flows makes amplification of weak signals possible
 Electronics is widely used in information processing telecommunication and
signal processing
Linearity of circuit
 A linear circuit in which circuit parameters ( resistance capacitance waveform
frequency are constant
 In other words a circuit whose parameters are not changed with respect to
current and voltage
Non Linear circuits
 Non linear circuit is an electric circuit whose parameters are varied with
respect to current and voltage
 A circuit in which circuit parameters resistance inductance capacitance
waveform frequency is not constant is called non linear circuit
Linear and Non-Linear Waveform
Material Used in Electronics
Semiconductors
 A material that is between conductors and insulators in its ability to
conductor electrical current.
 Semiconductor in its pure state is neither a good conductor nor a good
insulators.
 Single element most commonly used semiconductors are Silicon and
Germanium.
Intrinsic and extrinsic semiconductors
 Semiconductor in its pure form is known as intrinsic semiconductor
 Intrinsic usually have poor conductivity because of equal number of positive
and negative carriers
 Semiconductors in impure form is called extrinsic semiconductor,
 they are relatively good conductors as compared to intrinsic semiconductors.
 To form an extrinsic semiconductors, the intrinsic conductor is added with
impurities ( negative or positive charge carriers )
 The process of adding impurities to an intrinsic semiconductor is known as
doping process.
Introduction to Electronics
Energy Gap or Band Gap
 The valence shell of an atom represents a band of energy level
 When electron acquires enough additional energy it can leave the valence
shell become a free electron known as conduction band
 The difference in energy between the valence band and the conduction band
is called energy gap or band gap
 This is the amount of energy that a valence electron must have in order to
jump from the valance to conduction band
Introduction to Electronics
Introduction to Electronics
Silicon and Germanium
 The atomic structure of silicon and Germanium are compared in figure
 Silicon is used in diode transistors and IC’s and other semiconductor devices
 Both silicon and germanium have the characteristics four electrons
Introduction to Electronics
 The valence electrons in Gr are in 4th Shell while those in Si are in 3rd shell.
 Si is closed to the nucleus
 This means that Gr valence electrons are at higher energy level than those in
Si
 Therefore Gr requires a smaller amount of additional energy to escape from
atom,
 However this property makes Gr more unstable at higher temperature and
results in excessive reverse current
 This is why silicon is more widely used semiconductor material
Introduction to Electronics
 The electrons of an atom can exist only within
prescribed energy bands
 Each shall surround the nucleus corresponds to
a certain energy band and is separated from
adjacent shell by band gaps in which no
electron can exist
 Figure shows the energy band diagram for an
unexcited atom in a pure silicon crystal
 This is done with no external energy such as
heat
Conduction Electrons and Holes
 An Intrinsic (Pure) silicon at room temp has sufficient heat energy for some
valence electrons to jump the gap from valance to the conduction band
becoming free electrons
 Free electrons are also called conduction electrons
 A vacancy is left in the valance band within the Si crystal.
 This vacancy is known as hole
 For every electron raised to the conduction band by external energy there is
one hole left in the valance band
 Creating what is called an electron hole pair
 Recombination occurs when a conduction band electron loses energy and falls
back into a hole in the valance band
Introduction to Electronics
 When a voltage is applied across a piece of intrinsic silicon
 Thermally generated free electrons in the conduction band are free to move
randomly in the crystal structure are now easily attached towards the positive
end
 This movement of free electrons is one type of current in a semi conductor
material known as electron current
Introduction to Electronics
 The second type of current occurs in the valance band
 The holes created by the free electrons exist
 Electrons remaining in the valance band are still attached to their atoms and
are not free to move randomly in the crystal structure as are the free
electrons
 However a valance electron can move into a nearby hole with little change in
its energy level thus leaving another hole where it come from
 The hoe has moved from one place to another in the crystal structure
 Thus the current valance band is produced by valance electrons is is called
hole current
N-Type and P-Type Semiconductors
 Semi conductive material do not conduct current well and are of limited value in their
intrinsic state
 As we know semiconductors are generally poor conductors
 This is because of limited number of free electrons in the conduction band and holes in
the valance band
 Intrinsic silicon must be modified by increasing the number of free electrons or holes to
increase its conductivity and make it useful
 This conductivity can be drastically increased by the controlled addition of impurities
to the pure semi conductive material.
 The two categories of impurities are n-type and p-type
N-Type and P-Type Semiconductors
N-Type Semiconductor
 To increase the number of conduction band electrons in intrinsic silicon,
 A Pentavalent impurity atom are added
 There are atoms with five valance electrons such as Arsanic Bismuth and antimony (Sb)
 Each pentavalent atom (antimony ) forms a covalent bonds with four adjacent silicon
atoms leaving one extra electron
 This extra electron becomes a conduction electron because it is not involved in bonding
called as donor atom
 A conduction electron created by this doping process does not leave a hole in the
valance band because it is in excess of the number required to fill the valance band
N-Type and P-Type Semiconductors
Majority and Minority Carriers
 Most of the current carriers are electrons
 Silicon doped with pentavalent atoms is an n-
type semiconductor
 The “n” stand for negative charge on an electron
 In this case the electrons are called the majority
carriers
 Holes in an n type material are called minority
carriers
N-Type and P-Type Semiconductors
 To increase the number of holes in intrinsic silicon
 Trivalent impurity atoms are added
 These atoms with three valance electrons such as boron (B)
 Each trivalent atom forms a covalent bond with four adjacent silicon atoms
 All three of the boron atoms valance electrons are used in the covalent bond
with four adjacent silicon atoms
 And since four electrons are required
 A hole results when each trivalent atom is added
 The number of holes can be carefully controlled by the number of trivalent
impurity atoms added to the silicon
N-Type and P-Type Semiconductors
 Majority and Minority carriers
 Silicon doped with trivalent atoms is
called a P-type semiconductor
 The holes are the majority carriers in p-
type material
 Conduction band electrons in p-type
material are the minority carriers
PN junction
 PN junction
 When a silicon block is doped with a trivalent impurity and the other part
with a pentavalent impurity
 A boundary called the PN junction is formed between the resulting p-type and
n-type portion
 The N-type and P-type semiconductors forms a boundary between the two
regions and a diode is created
 The P region has many majority carriers “holes” from the impurity and only
few thermally generated free electrons
 The N region has many free electrons from the impurity atom and only a few
thermally generated holes
 A diode is made from a small piece of semiconductor material usually silicon
in which half is doped as a p region and half is doped as n region
PN junction
PN junction
 The free electrons in the n region are randomly drifting in all directions
 At the instant of the PN junction formation
 The free electrons near the junction in the n region begin to diffuse across
the junction into the p region, combine with holes near the junction
 When a pn junction is formed the n region loses electrons as they diffuse
across the junction
 This creates a layer of positive charges near the junction
 The p region loses holes as the electrons and holes combine
 This create a layer of negative charges near the junction
 The two layers of positive and negative layer form a depletion region

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1.Introduction to Electronics.pptx

  • 1. Introduction to Electronics Outline Classification of material Electronics Definition Material used in electronics Current in semiconductors N-Type and P Type Semiconductors PN junction
  • 2. Introduction to Electronics Classification of Materials  Materials are classified into three groups  Conductors, Semi conductors and Insulators Conductor  A material that easily conductors electrical current.  Copper Silver Aluminum  Conductors are characterized by with one valance electron very loosely bound to the atom Insulators  Those that does not conduct electrical current under normal conditions.  Most good insulators are compounds rather then single element material  having very high resistivity
  • 3. Introduction to Electronics What is electronics  The science of how to control electric energy  That energy in which electron have fundamental role  Electronics deal with electrical circuits that involve active electrical components such as vacuum tubes transistors diodes and IC and associated passive electrical component  Active components : Diode transistor and SCR  Passive Components: Resistors Capacitors and Inductors
  • 4. Difference b/w active and passive components  Active components:  Those devices or components which require external source to their operation is known as active components  For example Diode is an active component . So it is required an external source to its operation  If we connect a diode in a circuit and connect the circuit to the supply  The diode will not conduct the current until the supply voltage reaches 0.3 in case of Germanium or 0.7 in case of silicon  Active devices or components produce energy in the form of voltage or current
  • 5. Active and Passive Components Passive component  Those devices or components which do not require external source to their operation is called passive components  i.e., Resistors Capacitor inductors  Passive components  The passive components do not require external source to their operation  When a resistor is connect to the supply voltage it starts working automatically without using a specific voltage  Passive device store or maintain energy in the form of voltage of current
  • 6. Linear and Non Linear circuits  The non linear behavior of active components and their ability to control electron flows makes amplification of weak signals possible  Electronics is widely used in information processing telecommunication and signal processing Linearity of circuit  A linear circuit in which circuit parameters ( resistance capacitance waveform frequency are constant  In other words a circuit whose parameters are not changed with respect to current and voltage Non Linear circuits  Non linear circuit is an electric circuit whose parameters are varied with respect to current and voltage  A circuit in which circuit parameters resistance inductance capacitance waveform frequency is not constant is called non linear circuit
  • 8. Material Used in Electronics Semiconductors  A material that is between conductors and insulators in its ability to conductor electrical current.  Semiconductor in its pure state is neither a good conductor nor a good insulators.  Single element most commonly used semiconductors are Silicon and Germanium. Intrinsic and extrinsic semiconductors  Semiconductor in its pure form is known as intrinsic semiconductor  Intrinsic usually have poor conductivity because of equal number of positive and negative carriers  Semiconductors in impure form is called extrinsic semiconductor,  they are relatively good conductors as compared to intrinsic semiconductors.  To form an extrinsic semiconductors, the intrinsic conductor is added with impurities ( negative or positive charge carriers )  The process of adding impurities to an intrinsic semiconductor is known as doping process.
  • 9. Introduction to Electronics Energy Gap or Band Gap  The valence shell of an atom represents a band of energy level  When electron acquires enough additional energy it can leave the valence shell become a free electron known as conduction band  The difference in energy between the valence band and the conduction band is called energy gap or band gap  This is the amount of energy that a valence electron must have in order to jump from the valance to conduction band
  • 11. Introduction to Electronics Silicon and Germanium  The atomic structure of silicon and Germanium are compared in figure  Silicon is used in diode transistors and IC’s and other semiconductor devices  Both silicon and germanium have the characteristics four electrons
  • 12. Introduction to Electronics  The valence electrons in Gr are in 4th Shell while those in Si are in 3rd shell.  Si is closed to the nucleus  This means that Gr valence electrons are at higher energy level than those in Si  Therefore Gr requires a smaller amount of additional energy to escape from atom,  However this property makes Gr more unstable at higher temperature and results in excessive reverse current  This is why silicon is more widely used semiconductor material
  • 13. Introduction to Electronics  The electrons of an atom can exist only within prescribed energy bands  Each shall surround the nucleus corresponds to a certain energy band and is separated from adjacent shell by band gaps in which no electron can exist  Figure shows the energy band diagram for an unexcited atom in a pure silicon crystal  This is done with no external energy such as heat
  • 14. Conduction Electrons and Holes  An Intrinsic (Pure) silicon at room temp has sufficient heat energy for some valence electrons to jump the gap from valance to the conduction band becoming free electrons  Free electrons are also called conduction electrons  A vacancy is left in the valance band within the Si crystal.  This vacancy is known as hole  For every electron raised to the conduction band by external energy there is one hole left in the valance band  Creating what is called an electron hole pair  Recombination occurs when a conduction band electron loses energy and falls back into a hole in the valance band
  • 15. Introduction to Electronics  When a voltage is applied across a piece of intrinsic silicon  Thermally generated free electrons in the conduction band are free to move randomly in the crystal structure are now easily attached towards the positive end  This movement of free electrons is one type of current in a semi conductor material known as electron current
  • 16. Introduction to Electronics  The second type of current occurs in the valance band  The holes created by the free electrons exist  Electrons remaining in the valance band are still attached to their atoms and are not free to move randomly in the crystal structure as are the free electrons  However a valance electron can move into a nearby hole with little change in its energy level thus leaving another hole where it come from  The hoe has moved from one place to another in the crystal structure  Thus the current valance band is produced by valance electrons is is called hole current
  • 17. N-Type and P-Type Semiconductors  Semi conductive material do not conduct current well and are of limited value in their intrinsic state  As we know semiconductors are generally poor conductors  This is because of limited number of free electrons in the conduction band and holes in the valance band  Intrinsic silicon must be modified by increasing the number of free electrons or holes to increase its conductivity and make it useful  This conductivity can be drastically increased by the controlled addition of impurities to the pure semi conductive material.  The two categories of impurities are n-type and p-type
  • 18. N-Type and P-Type Semiconductors N-Type Semiconductor  To increase the number of conduction band electrons in intrinsic silicon,  A Pentavalent impurity atom are added  There are atoms with five valance electrons such as Arsanic Bismuth and antimony (Sb)  Each pentavalent atom (antimony ) forms a covalent bonds with four adjacent silicon atoms leaving one extra electron  This extra electron becomes a conduction electron because it is not involved in bonding called as donor atom  A conduction electron created by this doping process does not leave a hole in the valance band because it is in excess of the number required to fill the valance band
  • 19. N-Type and P-Type Semiconductors Majority and Minority Carriers  Most of the current carriers are electrons  Silicon doped with pentavalent atoms is an n- type semiconductor  The “n” stand for negative charge on an electron  In this case the electrons are called the majority carriers  Holes in an n type material are called minority carriers
  • 20. N-Type and P-Type Semiconductors  To increase the number of holes in intrinsic silicon  Trivalent impurity atoms are added  These atoms with three valance electrons such as boron (B)  Each trivalent atom forms a covalent bond with four adjacent silicon atoms  All three of the boron atoms valance electrons are used in the covalent bond with four adjacent silicon atoms  And since four electrons are required  A hole results when each trivalent atom is added  The number of holes can be carefully controlled by the number of trivalent impurity atoms added to the silicon
  • 21. N-Type and P-Type Semiconductors  Majority and Minority carriers  Silicon doped with trivalent atoms is called a P-type semiconductor  The holes are the majority carriers in p- type material  Conduction band electrons in p-type material are the minority carriers
  • 22. PN junction  PN junction  When a silicon block is doped with a trivalent impurity and the other part with a pentavalent impurity  A boundary called the PN junction is formed between the resulting p-type and n-type portion  The N-type and P-type semiconductors forms a boundary between the two regions and a diode is created  The P region has many majority carriers “holes” from the impurity and only few thermally generated free electrons  The N region has many free electrons from the impurity atom and only a few thermally generated holes  A diode is made from a small piece of semiconductor material usually silicon in which half is doped as a p region and half is doped as n region
  • 24. PN junction  The free electrons in the n region are randomly drifting in all directions  At the instant of the PN junction formation  The free electrons near the junction in the n region begin to diffuse across the junction into the p region, combine with holes near the junction  When a pn junction is formed the n region loses electrons as they diffuse across the junction  This creates a layer of positive charges near the junction  The p region loses holes as the electrons and holes combine  This create a layer of negative charges near the junction  The two layers of positive and negative layer form a depletion region