This is about BJT Transistor Operation.. that is for BSCS students.
This is very help ful .. but I'm writing this because i wanna download the presentation from this platform.. just chill
This document provides information about the course "20EC201 & ELECTRON DEVICES" taught at SRI RAMAKRISHNA ENGINEERING COLLEGE. The course covers concepts of semiconductor devices including bipolar junction transistors. It discusses transistor basics such as types, terminals, configurations, characteristics and parameters. Common configurations covered are common base, common collector and common emitter. Key concepts explained are current and voltage gains, input and output resistances, and early effect.
The bipolar junction transistor (BJT) is a three-terminal semiconductor device consisting of an emitter, base, and collector layers that is used as an electronic switch and amplifier. It contains a p-n-p or n-p-n junction between the emitter, base, and collector layers. Applying a small voltage to the base controls the flow of current between the emitter and collector, allowing the BJT to amplify signals and be used in applications such as amplifiers, switches, oscillators, temperature sensors, and current regulators.
Unit 5-BEE Electronics for Engineering in Computer branch 2nd sem diploma by ...raghavbairboyana6
This document provides an overview of transistors and their applications. It discusses the basic construction and operation of bipolar junction transistors (BJT) including NPN and PNP types. It also covers transistor configurations like common base, common emitter, and common collector. The characteristics of transistors in the common emitter configuration are described. Finally, the document introduces junction field effect transistors (JFET) including the construction and operation of an n-channel JFET and its characteristics. Transistors are used as switches and amplifiers in various electronic applications.
This document provides an introduction to analog devices and circuits, focusing on transistors. It discusses the basic components and applications of npn bipolar junction transistors (BJTs), including the emitter, collector, and base leads. It describes how BJTs function in common transistor configurations like CB, CE, and CC. The document also introduces field effect transistors (FETs) and compares N-channel and P-channel junction FETs (JFETs). It explains how JFETs can control current flow through depletion regions and lists some common applications of both BJTs and FETs in integrated circuits.
This document discusses transistors and their operation. It defines a transistor as a 3-terminal solid state device that controls output current, voltage, and power through input current. A bipolar junction transistor (BJT) is composed of two layers of doped semiconductor material separated by a thin section of the opposite doping. The three terminals are the emitter, base, and collector. The document describes the principles of operation for NPN and PNP transistors and their different modes of operation as amplifiers and switches depending on terminal biasing configurations.
Transistors were invented in 1947 and have three terminals - emitter, base, and collector. They come in two types, NPN and PNP, and work by amplifying or switching signals. There are different transistor structures and types including BJT, FET, and HBT. Transistors operate in three regions - cutoff, saturation, and active. Load line analysis involves plotting the output characteristics to determine collector current based on collector-emitter voltage.
A power transistor is a three-terminal semiconductor device designed to control high current and voltages. There are four main types: bipolar junction transistors (BJTs), metal-oxide-semiconductor field-effect transistors (MOSFETs), static induction transistors (SITs), and insulated-gate bipolar transistors (IGBTs). A power BJT is a bipolar junction transistor capable of handling large currents and voltages. It operates in four regions - cut-off, active, quasi saturation, and hard saturation - depending on the bias voltages applied. Power transistors are used in applications like switch-mode power supplies, relays, and power amplifiers.
Basic fundamental concepts of Bipolar Junction Transistorarhantenterprises2
This document provides an overview of analog and digital electronics, specifically focusing on transistors as amplifiers. It defines what a transistor is and its basic components - the emitter, base, and collector. The document discusses different types of transistors like BJT and the working principles of NPN and PNP transistors. It explains the common base, common collector, and common emitter configurations of a BJT transistor and their input/output characteristics including current gain definitions. The document also covers the operating regions and load line of a BJT transistor.
This document provides information about the course "20EC201 & ELECTRON DEVICES" taught at SRI RAMAKRISHNA ENGINEERING COLLEGE. The course covers concepts of semiconductor devices including bipolar junction transistors. It discusses transistor basics such as types, terminals, configurations, characteristics and parameters. Common configurations covered are common base, common collector and common emitter. Key concepts explained are current and voltage gains, input and output resistances, and early effect.
The bipolar junction transistor (BJT) is a three-terminal semiconductor device consisting of an emitter, base, and collector layers that is used as an electronic switch and amplifier. It contains a p-n-p or n-p-n junction between the emitter, base, and collector layers. Applying a small voltage to the base controls the flow of current between the emitter and collector, allowing the BJT to amplify signals and be used in applications such as amplifiers, switches, oscillators, temperature sensors, and current regulators.
Unit 5-BEE Electronics for Engineering in Computer branch 2nd sem diploma by ...raghavbairboyana6
This document provides an overview of transistors and their applications. It discusses the basic construction and operation of bipolar junction transistors (BJT) including NPN and PNP types. It also covers transistor configurations like common base, common emitter, and common collector. The characteristics of transistors in the common emitter configuration are described. Finally, the document introduces junction field effect transistors (JFET) including the construction and operation of an n-channel JFET and its characteristics. Transistors are used as switches and amplifiers in various electronic applications.
This document provides an introduction to analog devices and circuits, focusing on transistors. It discusses the basic components and applications of npn bipolar junction transistors (BJTs), including the emitter, collector, and base leads. It describes how BJTs function in common transistor configurations like CB, CE, and CC. The document also introduces field effect transistors (FETs) and compares N-channel and P-channel junction FETs (JFETs). It explains how JFETs can control current flow through depletion regions and lists some common applications of both BJTs and FETs in integrated circuits.
This document discusses transistors and their operation. It defines a transistor as a 3-terminal solid state device that controls output current, voltage, and power through input current. A bipolar junction transistor (BJT) is composed of two layers of doped semiconductor material separated by a thin section of the opposite doping. The three terminals are the emitter, base, and collector. The document describes the principles of operation for NPN and PNP transistors and their different modes of operation as amplifiers and switches depending on terminal biasing configurations.
Transistors were invented in 1947 and have three terminals - emitter, base, and collector. They come in two types, NPN and PNP, and work by amplifying or switching signals. There are different transistor structures and types including BJT, FET, and HBT. Transistors operate in three regions - cutoff, saturation, and active. Load line analysis involves plotting the output characteristics to determine collector current based on collector-emitter voltage.
A power transistor is a three-terminal semiconductor device designed to control high current and voltages. There are four main types: bipolar junction transistors (BJTs), metal-oxide-semiconductor field-effect transistors (MOSFETs), static induction transistors (SITs), and insulated-gate bipolar transistors (IGBTs). A power BJT is a bipolar junction transistor capable of handling large currents and voltages. It operates in four regions - cut-off, active, quasi saturation, and hard saturation - depending on the bias voltages applied. Power transistors are used in applications like switch-mode power supplies, relays, and power amplifiers.
Basic fundamental concepts of Bipolar Junction Transistorarhantenterprises2
This document provides an overview of analog and digital electronics, specifically focusing on transistors as amplifiers. It defines what a transistor is and its basic components - the emitter, base, and collector. The document discusses different types of transistors like BJT and the working principles of NPN and PNP transistors. It explains the common base, common collector, and common emitter configurations of a BJT transistor and their input/output characteristics including current gain definitions. The document also covers the operating regions and load line of a BJT transistor.
This document provides an overview of bipolar junction transistors (BJTs). It discusses:
1. BJTs were invented in 1947 at Bell Labs and helped launch the technology revolution. They come in npn and pnp types.
2. BJTs have three doped semiconductor regions (emitter, base, collector) separated by two pn junctions. One type has an npn structure and the other a pnp structure.
3. BJTs are used as linear amplifiers to boost signals and as electronic switches. Proper biasing of the base-emitter and base-collector junctions is needed for transistor operation.
The document discusses transistors and bipolar junction transistors (BJTs). It describes:
1. A transistor is a semiconductor device that can amplify or switch electronic signals and electrical power. It has at least three terminals.
2. A BJT has three terminals - base, collector, and emitter. A small current at the base controls a larger current between the collector and emitter, allowing amplification.
3. BJTs come in NPN and PNP types, which differ in the direction of electron flow. Proper biasing of the transistor's junctions is needed to operate it in the active mode for amplification applications.
The document discusses the bipolar junction transistor (BJT), including its history, operation, and applications. A BJT has three terminals - the base, collector, and emitter - and allows current to flow between the collector and emitter when a small base current is applied. It can be used to amplify signals and operate in different modes like active, cut-off, and saturation depending on terminal voltages. Common configurations include common base, common emitter, and common collector, which differ in their input/output impedances, current/voltage gain, and other properties. The BJT was a pivotal invention that enabled solid-state electronics and the information age.
Basic Fundamental Of Transistors by D-SardaDinesh Sarda
Transistors are the building blocks of electronics and come in two types - intrinsic and extrinsic semiconductors. Intrinsic semiconductors are pure while extrinsic have impurities added. The first transistor was invented in 1947 by Bardeen and Brattain. Moore's Law predicted transistors in integrated circuits would double every two years. A transistor is a three-layer semiconductor device that can conduct or insulate electricity and comes in bipolar and field effect varieties.
Here you find the information about Transistors. And know about
-> Type Of Transistor:
->Region of Transistor:
->P-N Junction Diodes
->Transistor application
->Transistor Connections
Limitation:
->Future of transistor:
Presentation on bipolar junction transistorKawsar Ahmed
This presentation introduces bipolar junction transistors (BJTs). It discusses the two types of BJTs - NPN and PNP transistors, which differ based on whether holes or electrons are the majority carriers. The key components of a transistor - emitter, base, and collector - are defined. The presentation compares the three common transistor configurations - common base, common emitter, and common collector - and provides expressions for collector current in each. It also discusses transistor operation, characteristics, and applications such as amplification. Overall, the presentation provides a comprehensive overview of BJT fundamentals.
This presentation provides an overview of bipolar junction transistors (BJTs). It defines the two types of BJTs as npn and pnp, which differ based on whether holes or electrons are emitted from the emitter. The key components of a BJT are described as the emitter, base, and collector. The presentation explains how BJTs operate based on forward biasing of the emitter-base junction and reverse biasing of the base-collector junction. Different transistor terminals, operating modes, connections (common base, common emitter, common collector), and characteristics are discussed. Transistors can be used as amplifiers by applying a signal to the base while keeping it forward biased through a battery. Load line
edcThe valence band is simply the outermost electron orbital of an atom of any specific material that electrons actually occupy
The conduction band is the band of electron orbitals that electrons can jump up into from the valence band when excited. When the electrons are in these orbitals, they have enough energy to move freely in the material
The energy difference between the highest occupied energy state of the valence band and the lowest unoccupied state of the conduction band is called the band gap
The document discusses the construction and operation of bipolar junction transistors (BJTs). It begins by explaining that a BJT has three terminals - emitter, base, and collector - made of doped semiconductor material. Current flow is due to charge carriers diffusing across the base-emitter and base-collector junctions. It then describes the common base (CB), common emitter (CE), and common collector (CC) configurations, explaining their input/output characteristics, current and voltage gains, and other properties. The key parameters alpha (α) and beta (β) are also defined and their relationship explained.
Transistor, its working and ApplicationsSajawalNawaz2
The document discusses transistors, their working, types, and applications. A transistor is an electronic component that uses semiconductors to amplify or switch electrical signals and power. It has three terminals called the emitter, base, and collector. Transistors come in different types like bipolar junction, field effect, etc. and are classified as NPN or PNP depending on the arrangement of N-type and P-type semiconductors. The document describes how NPN and PNP transistors work by controlling the flow of current between the emitter and collector using the base. Finally, it lists some common applications of transistors like as a switch, circuit element, and amplifier.
The document discusses the construction and operation of bipolar junction transistors (BJTs). It describes how BJTs are constructed of doped semiconductor material with emitter, base, and collector regions. The base is located between the emitter and collector. In an NPN transistor, the base-emitter junction is forward biased, allowing electrons to inject into the base. These electrons diffuse through the base toward the reverse-biased collector-base junction and are swept into the collector. The document discusses various BJT configurations and modes of operation including common base, common emitter, and common collector. It provides details on input and output characteristics for the common base configuration.
The document discusses bipolar junction transistors (BJTs) including their construction, working principle, and different configurations. It provides details on:
- How a BJT is constructed of doped semiconductor material and operates by charge flow due to diffusion across junctions between regions of different charge concentrations.
- The common base (CB), common emitter (CE), and common collector (CC) configurations, explaining how each has different input/output characteristics, current and voltage gains.
- The CE configuration is most commonly used as it provides the highest current and power gain. It inverts the input signal phase.
- Parameters like alpha (α), beta (β), and their relationship which defines the current gain
The document discusses transistors, beginning with a brief history of their invention as an improvement over vacuum tubes. It describes the two main types of transistors - bipolar junction transistors (BJTs) and field effect transistors (FETs). BJTs are explained in more detail, including their construction of three doped semiconductor regions (emitter, base, collector), types (NPN and PNP), and working principle of current flow when forward and reverse biased. Key applications of transistors include amplification, switching, and regulation.
The transistor is a semiconductor device with three terminals - the emitter, base, and collector. Current flowing into the base terminal controls the flow of current between the emitter and collector terminals, allowing transistors to function as amplifiers or switches. Transistors come in two main types - bipolar junction transistors (BJT) which use both electrons and holes as current carriers, and field effect transistors (FET) which use an electric field to control the flow of electrons or holes in a channel. BJTs contain two pn junctions and come in npn or pnp varieties, while FETs use a gate to modulate the conductivity of a channel between source and drain terminals.
This document provides an overview of bipolar junction transistors (BJTs). It begins by describing the invention and key advantages of BJTs, including their high speed, low noise, and high output power. It then discusses the construction of BJTs, noting they are composed of three doped semiconductor regions (emitter, base, collector) separated by two pn junctions. The document outlines the two types of BJTs and describes their operation, including the forward bias of the base-emitter junction and reverse bias of the base-collector junction. It also discusses the four modes of BJT operation - cutoff, saturation, active, and reverse active - and their applications.
Transistors are three-terminal electronic components made of semiconductor material that control the flow of current in circuits. There are two main types: NPN transistors, which have two blocks of N-type semiconductor and one block of P-type; and PNP transistors, which have one block of N-type and two blocks of P-type. Transistors have three terminals - the emitter supplies charge carriers to the base, the collector collects carriers from the base, and the base controls the flow. Transistors are used in many applications like oscillators, compact discs, hearing aids, switches, and as the basic building blocks of computer processors. Modern computer processors can contain billions of transistors on a single chip.
The document provides information on transistors, including:
- Bipolar junction transistors (BJTs) have NPN and PNP types and can be configured as common base (CB), common emitter (CE), or common collector (CC).
- Field effect transistors (FETs) include JFETs and MOSFETs. JFETs have n-channel or p-channel types while MOSFETs include enhancement and depletion n-channel types.
- Proper biasing of the base-emitter and base-collector junctions is needed to operate BJTs in the active region for amplification applications. Different biasing techniques can be used including fixed, emitter feedback, and collector feedback methods
The debris of the ‘last major merger’ is dynamically youngSérgio Sacani
The Milky Way’s (MW) inner stellar halo contains an [Fe/H]-rich component with highly eccentric orbits, often referred to as the
‘last major merger.’ Hypotheses for the origin of this component include Gaia-Sausage/Enceladus (GSE), where the progenitor
collided with the MW proto-disc 8–11 Gyr ago, and the Virgo Radial Merger (VRM), where the progenitor collided with the
MW disc within the last 3 Gyr. These two scenarios make different predictions about observable structure in local phase space,
because the morphology of debris depends on how long it has had to phase mix. The recently identified phase-space folds in Gaia
DR3 have positive caustic velocities, making them fundamentally different than the phase-mixed chevrons found in simulations
at late times. Roughly 20 per cent of the stars in the prograde local stellar halo are associated with the observed caustics. Based
on a simple phase-mixing model, the observed number of caustics are consistent with a merger that occurred 1–2 Gyr ago.
We also compare the observed phase-space distribution to FIRE-2 Latte simulations of GSE-like mergers, using a quantitative
measurement of phase mixing (2D causticality). The observed local phase-space distribution best matches the simulated data
1–2 Gyr after collision, and certainly not later than 3 Gyr. This is further evidence that the progenitor of the ‘last major merger’
did not collide with the MW proto-disc at early times, as is thought for the GSE, but instead collided with the MW disc within
the last few Gyr, consistent with the body of work surrounding the VRM.
Describing and Interpreting an Immersive Learning Case with the Immersion Cub...Leonel Morgado
Current descriptions of immersive learning cases are often difficult or impossible to compare. This is due to a myriad of different options on what details to include, which aspects are relevant, and on the descriptive approaches employed. Also, these aspects often combine very specific details with more general guidelines or indicate intents and rationales without clarifying their implementation. In this paper we provide a method to describe immersive learning cases that is structured to enable comparisons, yet flexible enough to allow researchers and practitioners to decide which aspects to include. This method leverages a taxonomy that classifies educational aspects at three levels (uses, practices, and strategies) and then utilizes two frameworks, the Immersive Learning Brain and the Immersion Cube, to enable a structured description and interpretation of immersive learning cases. The method is then demonstrated on a published immersive learning case on training for wind turbine maintenance using virtual reality. Applying the method results in a structured artifact, the Immersive Learning Case Sheet, that tags the case with its proximal uses, practices, and strategies, and refines the free text case description to ensure that matching details are included. This contribution is thus a case description method in support of future comparative research of immersive learning cases. We then discuss how the resulting description and interpretation can be leveraged to change immersion learning cases, by enriching them (considering low-effort changes or additions) or innovating (exploring more challenging avenues of transformation). The method holds significant promise to support better-grounded research in immersive learning.
This document provides an overview of bipolar junction transistors (BJTs). It discusses:
1. BJTs were invented in 1947 at Bell Labs and helped launch the technology revolution. They come in npn and pnp types.
2. BJTs have three doped semiconductor regions (emitter, base, collector) separated by two pn junctions. One type has an npn structure and the other a pnp structure.
3. BJTs are used as linear amplifiers to boost signals and as electronic switches. Proper biasing of the base-emitter and base-collector junctions is needed for transistor operation.
The document discusses transistors and bipolar junction transistors (BJTs). It describes:
1. A transistor is a semiconductor device that can amplify or switch electronic signals and electrical power. It has at least three terminals.
2. A BJT has three terminals - base, collector, and emitter. A small current at the base controls a larger current between the collector and emitter, allowing amplification.
3. BJTs come in NPN and PNP types, which differ in the direction of electron flow. Proper biasing of the transistor's junctions is needed to operate it in the active mode for amplification applications.
The document discusses the bipolar junction transistor (BJT), including its history, operation, and applications. A BJT has three terminals - the base, collector, and emitter - and allows current to flow between the collector and emitter when a small base current is applied. It can be used to amplify signals and operate in different modes like active, cut-off, and saturation depending on terminal voltages. Common configurations include common base, common emitter, and common collector, which differ in their input/output impedances, current/voltage gain, and other properties. The BJT was a pivotal invention that enabled solid-state electronics and the information age.
Basic Fundamental Of Transistors by D-SardaDinesh Sarda
Transistors are the building blocks of electronics and come in two types - intrinsic and extrinsic semiconductors. Intrinsic semiconductors are pure while extrinsic have impurities added. The first transistor was invented in 1947 by Bardeen and Brattain. Moore's Law predicted transistors in integrated circuits would double every two years. A transistor is a three-layer semiconductor device that can conduct or insulate electricity and comes in bipolar and field effect varieties.
Here you find the information about Transistors. And know about
-> Type Of Transistor:
->Region of Transistor:
->P-N Junction Diodes
->Transistor application
->Transistor Connections
Limitation:
->Future of transistor:
Presentation on bipolar junction transistorKawsar Ahmed
This presentation introduces bipolar junction transistors (BJTs). It discusses the two types of BJTs - NPN and PNP transistors, which differ based on whether holes or electrons are the majority carriers. The key components of a transistor - emitter, base, and collector - are defined. The presentation compares the three common transistor configurations - common base, common emitter, and common collector - and provides expressions for collector current in each. It also discusses transistor operation, characteristics, and applications such as amplification. Overall, the presentation provides a comprehensive overview of BJT fundamentals.
This presentation provides an overview of bipolar junction transistors (BJTs). It defines the two types of BJTs as npn and pnp, which differ based on whether holes or electrons are emitted from the emitter. The key components of a BJT are described as the emitter, base, and collector. The presentation explains how BJTs operate based on forward biasing of the emitter-base junction and reverse biasing of the base-collector junction. Different transistor terminals, operating modes, connections (common base, common emitter, common collector), and characteristics are discussed. Transistors can be used as amplifiers by applying a signal to the base while keeping it forward biased through a battery. Load line
edcThe valence band is simply the outermost electron orbital of an atom of any specific material that electrons actually occupy
The conduction band is the band of electron orbitals that electrons can jump up into from the valence band when excited. When the electrons are in these orbitals, they have enough energy to move freely in the material
The energy difference between the highest occupied energy state of the valence band and the lowest unoccupied state of the conduction band is called the band gap
The document discusses the construction and operation of bipolar junction transistors (BJTs). It begins by explaining that a BJT has three terminals - emitter, base, and collector - made of doped semiconductor material. Current flow is due to charge carriers diffusing across the base-emitter and base-collector junctions. It then describes the common base (CB), common emitter (CE), and common collector (CC) configurations, explaining their input/output characteristics, current and voltage gains, and other properties. The key parameters alpha (α) and beta (β) are also defined and their relationship explained.
Transistor, its working and ApplicationsSajawalNawaz2
The document discusses transistors, their working, types, and applications. A transistor is an electronic component that uses semiconductors to amplify or switch electrical signals and power. It has three terminals called the emitter, base, and collector. Transistors come in different types like bipolar junction, field effect, etc. and are classified as NPN or PNP depending on the arrangement of N-type and P-type semiconductors. The document describes how NPN and PNP transistors work by controlling the flow of current between the emitter and collector using the base. Finally, it lists some common applications of transistors like as a switch, circuit element, and amplifier.
The document discusses the construction and operation of bipolar junction transistors (BJTs). It describes how BJTs are constructed of doped semiconductor material with emitter, base, and collector regions. The base is located between the emitter and collector. In an NPN transistor, the base-emitter junction is forward biased, allowing electrons to inject into the base. These electrons diffuse through the base toward the reverse-biased collector-base junction and are swept into the collector. The document discusses various BJT configurations and modes of operation including common base, common emitter, and common collector. It provides details on input and output characteristics for the common base configuration.
The document discusses bipolar junction transistors (BJTs) including their construction, working principle, and different configurations. It provides details on:
- How a BJT is constructed of doped semiconductor material and operates by charge flow due to diffusion across junctions between regions of different charge concentrations.
- The common base (CB), common emitter (CE), and common collector (CC) configurations, explaining how each has different input/output characteristics, current and voltage gains.
- The CE configuration is most commonly used as it provides the highest current and power gain. It inverts the input signal phase.
- Parameters like alpha (α), beta (β), and their relationship which defines the current gain
The document discusses transistors, beginning with a brief history of their invention as an improvement over vacuum tubes. It describes the two main types of transistors - bipolar junction transistors (BJTs) and field effect transistors (FETs). BJTs are explained in more detail, including their construction of three doped semiconductor regions (emitter, base, collector), types (NPN and PNP), and working principle of current flow when forward and reverse biased. Key applications of transistors include amplification, switching, and regulation.
The transistor is a semiconductor device with three terminals - the emitter, base, and collector. Current flowing into the base terminal controls the flow of current between the emitter and collector terminals, allowing transistors to function as amplifiers or switches. Transistors come in two main types - bipolar junction transistors (BJT) which use both electrons and holes as current carriers, and field effect transistors (FET) which use an electric field to control the flow of electrons or holes in a channel. BJTs contain two pn junctions and come in npn or pnp varieties, while FETs use a gate to modulate the conductivity of a channel between source and drain terminals.
This document provides an overview of bipolar junction transistors (BJTs). It begins by describing the invention and key advantages of BJTs, including their high speed, low noise, and high output power. It then discusses the construction of BJTs, noting they are composed of three doped semiconductor regions (emitter, base, collector) separated by two pn junctions. The document outlines the two types of BJTs and describes their operation, including the forward bias of the base-emitter junction and reverse bias of the base-collector junction. It also discusses the four modes of BJT operation - cutoff, saturation, active, and reverse active - and their applications.
Transistors are three-terminal electronic components made of semiconductor material that control the flow of current in circuits. There are two main types: NPN transistors, which have two blocks of N-type semiconductor and one block of P-type; and PNP transistors, which have one block of N-type and two blocks of P-type. Transistors have three terminals - the emitter supplies charge carriers to the base, the collector collects carriers from the base, and the base controls the flow. Transistors are used in many applications like oscillators, compact discs, hearing aids, switches, and as the basic building blocks of computer processors. Modern computer processors can contain billions of transistors on a single chip.
The document provides information on transistors, including:
- Bipolar junction transistors (BJTs) have NPN and PNP types and can be configured as common base (CB), common emitter (CE), or common collector (CC).
- Field effect transistors (FETs) include JFETs and MOSFETs. JFETs have n-channel or p-channel types while MOSFETs include enhancement and depletion n-channel types.
- Proper biasing of the base-emitter and base-collector junctions is needed to operate BJTs in the active region for amplification applications. Different biasing techniques can be used including fixed, emitter feedback, and collector feedback methods
The debris of the ‘last major merger’ is dynamically youngSérgio Sacani
The Milky Way’s (MW) inner stellar halo contains an [Fe/H]-rich component with highly eccentric orbits, often referred to as the
‘last major merger.’ Hypotheses for the origin of this component include Gaia-Sausage/Enceladus (GSE), where the progenitor
collided with the MW proto-disc 8–11 Gyr ago, and the Virgo Radial Merger (VRM), where the progenitor collided with the
MW disc within the last 3 Gyr. These two scenarios make different predictions about observable structure in local phase space,
because the morphology of debris depends on how long it has had to phase mix. The recently identified phase-space folds in Gaia
DR3 have positive caustic velocities, making them fundamentally different than the phase-mixed chevrons found in simulations
at late times. Roughly 20 per cent of the stars in the prograde local stellar halo are associated with the observed caustics. Based
on a simple phase-mixing model, the observed number of caustics are consistent with a merger that occurred 1–2 Gyr ago.
We also compare the observed phase-space distribution to FIRE-2 Latte simulations of GSE-like mergers, using a quantitative
measurement of phase mixing (2D causticality). The observed local phase-space distribution best matches the simulated data
1–2 Gyr after collision, and certainly not later than 3 Gyr. This is further evidence that the progenitor of the ‘last major merger’
did not collide with the MW proto-disc at early times, as is thought for the GSE, but instead collided with the MW disc within
the last few Gyr, consistent with the body of work surrounding the VRM.
Describing and Interpreting an Immersive Learning Case with the Immersion Cub...Leonel Morgado
Current descriptions of immersive learning cases are often difficult or impossible to compare. This is due to a myriad of different options on what details to include, which aspects are relevant, and on the descriptive approaches employed. Also, these aspects often combine very specific details with more general guidelines or indicate intents and rationales without clarifying their implementation. In this paper we provide a method to describe immersive learning cases that is structured to enable comparisons, yet flexible enough to allow researchers and practitioners to decide which aspects to include. This method leverages a taxonomy that classifies educational aspects at three levels (uses, practices, and strategies) and then utilizes two frameworks, the Immersive Learning Brain and the Immersion Cube, to enable a structured description and interpretation of immersive learning cases. The method is then demonstrated on a published immersive learning case on training for wind turbine maintenance using virtual reality. Applying the method results in a structured artifact, the Immersive Learning Case Sheet, that tags the case with its proximal uses, practices, and strategies, and refines the free text case description to ensure that matching details are included. This contribution is thus a case description method in support of future comparative research of immersive learning cases. We then discuss how the resulting description and interpretation can be leveraged to change immersion learning cases, by enriching them (considering low-effort changes or additions) or innovating (exploring more challenging avenues of transformation). The method holds significant promise to support better-grounded research in immersive learning.
Current Ms word generated power point presentation covers major details about the micronuclei test. It's significance and assays to conduct it. It is used to detect the micronuclei formation inside the cells of nearly every multicellular organism. It's formation takes place during chromosomal sepration at metaphase.
EWOCS-I: The catalog of X-ray sources in Westerlund 1 from the Extended Weste...Sérgio Sacani
Context. With a mass exceeding several 104 M⊙ and a rich and dense population of massive stars, supermassive young star clusters
represent the most massive star-forming environment that is dominated by the feedback from massive stars and gravitational interactions
among stars.
Aims. In this paper we present the Extended Westerlund 1 and 2 Open Clusters Survey (EWOCS) project, which aims to investigate
the influence of the starburst environment on the formation of stars and planets, and on the evolution of both low and high mass stars.
The primary targets of this project are Westerlund 1 and 2, the closest supermassive star clusters to the Sun.
Methods. The project is based primarily on recent observations conducted with the Chandra and JWST observatories. Specifically,
the Chandra survey of Westerlund 1 consists of 36 new ACIS-I observations, nearly co-pointed, for a total exposure time of 1 Msec.
Additionally, we included 8 archival Chandra/ACIS-S observations. This paper presents the resulting catalog of X-ray sources within
and around Westerlund 1. Sources were detected by combining various existing methods, and photon extraction and source validation
were carried out using the ACIS-Extract software.
Results. The EWOCS X-ray catalog comprises 5963 validated sources out of the 9420 initially provided to ACIS-Extract, reaching a
photon flux threshold of approximately 2 × 10−8 photons cm−2
s
−1
. The X-ray sources exhibit a highly concentrated spatial distribution,
with 1075 sources located within the central 1 arcmin. We have successfully detected X-ray emissions from 126 out of the 166 known
massive stars of the cluster, and we have collected over 71 000 photons from the magnetar CXO J164710.20-455217.
Unlocking the mysteries of reproduction: Exploring fecundity and gonadosomati...AbdullaAlAsif1
The pygmy halfbeak Dermogenys colletei, is known for its viviparous nature, this presents an intriguing case of relatively low fecundity, raising questions about potential compensatory reproductive strategies employed by this species. Our study delves into the examination of fecundity and the Gonadosomatic Index (GSI) in the Pygmy Halfbeak, D. colletei (Meisner, 2001), an intriguing viviparous fish indigenous to Sarawak, Borneo. We hypothesize that the Pygmy halfbeak, D. colletei, may exhibit unique reproductive adaptations to offset its low fecundity, thus enhancing its survival and fitness. To address this, we conducted a comprehensive study utilizing 28 mature female specimens of D. colletei, carefully measuring fecundity and GSI to shed light on the reproductive adaptations of this species. Our findings reveal that D. colletei indeed exhibits low fecundity, with a mean of 16.76 ± 2.01, and a mean GSI of 12.83 ± 1.27, providing crucial insights into the reproductive mechanisms at play in this species. These results underscore the existence of unique reproductive strategies in D. colletei, enabling its adaptation and persistence in Borneo's diverse aquatic ecosystems, and call for further ecological research to elucidate these mechanisms. This study lends to a better understanding of viviparous fish in Borneo and contributes to the broader field of aquatic ecology, enhancing our knowledge of species adaptations to unique ecological challenges.
The binding of cosmological structures by massless topological defectsSérgio Sacani
Assuming spherical symmetry and weak field, it is shown that if one solves the Poisson equation or the Einstein field
equations sourced by a topological defect, i.e. a singularity of a very specific form, the result is a localized gravitational
field capable of driving flat rotation (i.e. Keplerian circular orbits at a constant speed for all radii) of test masses on a thin
spherical shell without any underlying mass. Moreover, a large-scale structure which exploits this solution by assembling
concentrically a number of such topological defects can establish a flat stellar or galactic rotation curve, and can also deflect
light in the same manner as an equipotential (isothermal) sphere. Thus, the need for dark matter or modified gravity theory is
mitigated, at least in part.
The use of Nauplii and metanauplii artemia in aquaculture (brine shrimp).pptxMAGOTI ERNEST
Although Artemia has been known to man for centuries, its use as a food for the culture of larval organisms apparently began only in the 1930s, when several investigators found that it made an excellent food for newly hatched fish larvae (Litvinenko et al., 2023). As aquaculture developed in the 1960s and ‘70s, the use of Artemia also became more widespread, due both to its convenience and to its nutritional value for larval organisms (Arenas-Pardo et al., 2024). The fact that Artemia dormant cysts can be stored for long periods in cans, and then used as an off-the-shelf food requiring only 24 h of incubation makes them the most convenient, least labor-intensive, live food available for aquaculture (Sorgeloos & Roubach, 2021). The nutritional value of Artemia, especially for marine organisms, is not constant, but varies both geographically and temporally. During the last decade, however, both the causes of Artemia nutritional variability and methods to improve poorquality Artemia have been identified (Loufi et al., 2024).
Brine shrimp (Artemia spp.) are used in marine aquaculture worldwide. Annually, more than 2,000 metric tons of dry cysts are used for cultivation of fish, crustacean, and shellfish larva. Brine shrimp are important to aquaculture because newly hatched brine shrimp nauplii (larvae) provide a food source for many fish fry (Mozanzadeh et al., 2021). Culture and harvesting of brine shrimp eggs represents another aspect of the aquaculture industry. Nauplii and metanauplii of Artemia, commonly known as brine shrimp, play a crucial role in aquaculture due to their nutritional value and suitability as live feed for many aquatic species, particularly in larval stages (Sorgeloos & Roubach, 2021).
Or: Beyond linear.
Abstract: Equivariant neural networks are neural networks that incorporate symmetries. The nonlinear activation functions in these networks result in interesting nonlinear equivariant maps between simple representations, and motivate the key player of this talk: piecewise linear representation theory.
Disclaimer: No one is perfect, so please mind that there might be mistakes and typos.
dtubbenhauer@gmail.com
Corrected slides: dtubbenhauer.com/talks.html
2. Introduction :
Objectives:
1. To introduce the audience to the fundamentals of BJT transistor operation
and provide a basic understanding of how they work in electronic circuits.
2. To provide an overview of Basic BJT transistor operation
3. To explain how BJTs can be used as amplifiers and switches
4. To introduce the concept of biasing BJTs and BJT amplifier configurations
5. To discuss troubleshooting techniques for BJT circuits
3. What is a Transistor ?
• Transistor:
A transistor is an electronic component that is widely used in electronic devices for
amplifying or switching electronic signals. It consists of three layers of
semiconductor materials – an emitter, a base, and a collector – that are sandwiched
together to form a two-junction device. The emitter is doped with impurities that
give it an excess of electrons, while the collector is doped with impurities that
create a shortage of electrons. The base is a thin layer between the emitter and
collector that is responsible for controlling the flow of electrons between the two.
• Importance:
The importance of transistors in electronic devices cannot be overstated. They
have revolutionized the field of electronics by replacing bulky and power-hungry
vacuum tubes with smaller, more efficient components. Transistors enable
electronic devices to process information faster, more accurately, and with greater
efficiency. They are used in a wide range of electronic devices, from calculators and
radios to smartphones and computers.
4. BJT Transistor Basics:
• BJT stands for Bipolar Junction Transistor, which is a type of transistor that uses both
electrons and holes as charge carriers.
• Three-layer semiconductor device consisting of two p-n junctions.
• Composed of two types of semiconductor P-type and N-type, hence the name
“bipolar”.
• The BJT has three regions: the emitter, the base, and the collector.
• The emitter is doped heavily with impurities to provide a large number of free
electrons,
• The base is lightly doped and acts as the control element of the transistor.
• The collector is doped moderately to collect the electrons that pass through the base.
• When a small current flows into the base region, it controls a much larger current
flowing between the collector and emitter regions. This makes the BJT an excellent
amplifier, as small changes in the base current can result in large changes in the
collector current.
5. Characteristics of BJT transistors
Current Amplification:
A small change in the base current results in a large change in collector current, making BJT transistors suitable for amplification.
Voltage-Controlled Device:
The collector current is controlled by the base-emitter voltage, making it a voltage-controlled device.
Switching:
BJT transistors can also be used as switches, where they are either fully ON or fully OFF.
Bipolar:
BJT transistors are bipolar devices because both electrons and holes are involved in the conduction process.
Nonlinear:
The relationship between the collector current and the base-emitter voltage is nonlinear.
Thermal stability:
BJT is relatively stable at high temperatures, which makes it suitable for use in high-temperature environments.
Noise:
BJT has low noise characteristics, which makes it useful in applications where low noise is important.
6. NPN Transistor Operation:
• NPN transistors are a type of bipolar junction transistor (BJT) that have an N-
type material in the emitter and collector regions and a P-type material in the
base region. In an NPN transistor, the majority carriers in the emitter and
collector are electrons, while in the base, they are holes.
• When a small current flows into the base region, it controls a much larger
current flowing between the collector and emitter regions. This makes the
NPN transistor an excellent amplifier, as small changes in the base current
can result in large changes in the collector current.
• NPN transistors are widely used in electronic circuits for amplification,
switching, and oscillation. They are commonly used in applications such as
audio amplifiers, power supplies, and signal processing circuits.
7. PNP Transistor Operation:
• PNP transistors are a type of bipolar junction transistor (BJT) that have a P-type material
in the emitter and collector regions, and an N-type material in the base region. In a PNP
transistor, the majority carriers in the emitter and collector are holes, while in the base
they are electrons.
• Similar to NPN transistors, when a small current is applied to the base region of a PNP
transistor, it controls a much larger current flowing between the emitter and collector
regions. This makes PNP transistors useful for amplification, switching, and signal
processing applications.
• In a PNP transistor, when the base-emitter junction is forward-biased, holes flow from the
emitter into the base, where they combine with electrons. This creates a depletion region
at the junction, allowing current to flow from the collector to the emitter region.
• When the base-emitter voltage increases, the base current also increases, which in turn
increases the collector current. This results in a larger current flowing through the
collector, creating amplification.
• In the active region of a PNP transistor, the collector-base junction is reverse-biased,
allowing the transistor to act as a voltage-controlled current source. PNP transistors are
commonly used in complementary transistor pairs with NPN transistors to form various
types of analog circuits, including amplifiers, voltage regulators, and signal generators
8. Biasing Of BJT Transistor :
• Biasing refers to the process of applying a DC voltage or current to the BJT transistor
to establish a stable operating point.
• Proper biasing is essential to ensure that the BJT operates in its desired region and
with the desired characteristics.
• There are three common types of biasing: fixed bias, emitter bias, and collector
feedback bias.
• Fixed bias involves connecting a voltage source directly to the base terminal of the
BJT.
• Emitter bias involves connecting a resistor between the emitter terminal and the
ground, which establishes the operating current for the BJT.
• Collector feedback bias involves connecting a resistor between the collector and the
base terminals, which provides negative feedback and stabilizes the operating point
of the BJT.
• The choice of biasing method depends on the application and desired operating
characteristics of the BJT.