SlideShare a Scribd company logo
‫پروژه درس مدارهای واسط‬

‫استاد :/ جنـاب آقای دکتـر عـبدی‬

‫دانشجو:/ رامین وقار موسوی / رشته الکترونیک‬

‫دانشگاه :/ پردیس علوم و تحقیقات خراسان شمالی/ 2931‬
‫فهرست مطالب :‬
‫‪Home‬‬

‫1‪F‬‬

‫2‪F‬‬

‫@ مقدمه‬

‫@ فصل اول : ادبیات تحقیق‬
‫@ فصل دوم :عنصری پایه در الکترونیک‬

‫3‪F‬‬

‫4‪F‬‬

‫5‪F‬‬

‫‪RS‬‬

‫@ فصل سوم :بررسی ساختار المان‬
‫@ فصل چهارم:توابع ریاضی‬

‫@ فصل پنجم :سنسورهای دما با استفاده از ممریستور‬
‫@ نتیجه گیری‬
‫@ منابع‬
‫مقدمه...‬
‫‪Home‬‬

‫1‪F‬‬

‫ممریستور ‪: Memristor‬‬

‫2‪F‬‬

‫مخفف واژه ‪ Memory Resistor‬به معنای پایدار کننده حافظهه اته . از لحها‬

‫3‪F‬‬

‫4‪F‬‬

‫5‪F‬‬

‫تخ‬

‫افزاری، یک ابزار میکروتکوپیک ات‬

‫کهه م‌ووادهد اهرایل الکتریکه‌‬

‫ماقبل خود را حفظ کند‬

‫‪Memory Resistor‬‬

‫‪RS‬‬

‫‪Memristor‬‬
‫‪Home‬‬

‫فصل اول ...‬

‫1‪F‬‬

‫2‪F‬‬

‫3‪F‬‬

‫4‪F‬‬

‫5‪F‬‬

‫‪RS‬‬

‫• تاریخچه تحقیق‬
Home

F1

F2

F3

F4

F5

RS

3 fundamental
circuit elements
Home

F1

F2

F3

F4

F5

RS

3 fundamental
circuit elements
Home

F1

F2

LEON 0. CHUA
Memristor-The Missing Circuit
Element

F3

F4

IEEE TRANSACTIONS ON CIRCUIT
THEORY, VOL. CT-18, NO. 5,
SEPTEMBER 1971

F5

RS

4 fundamental
circuit elements
Home

F1

F2

F3

F4

F5

RS
‫‪Home‬‬

‫فصل دوم ...‬

‫1‪F‬‬

‫2‪F‬‬

‫3‪F‬‬

‫4‪F‬‬

‫5‪F‬‬

‫‪RS‬‬

‫• عنصری پایه در الکترونیک‬
‫ممریستور ‪: Memristor‬‬
‫عنصر غیر فعال دو تهری کهه مادنهد مماومه ، خهازل و ته ف (تهی‬
‫‪Home‬‬

‫1‪F‬‬

‫پیچ) به عنوال عنصر پایهه در مهداراا الکتریکه‌ م هره اهده اته‬
‫تردوات‌ همچول ورادزیستور در ادتظهار نل اته .داده‬

‫2‪F‬‬

‫برق بها اتهتفاده از حهروب قبهل و ایه‬

‫3‪F‬‬

‫و‬

‫منندته‌‬

‫حهرب قدیهد، قابهل بازدویسه‌‬

‫ات‬

‫4‪F‬‬

‫5‪F‬‬

‫‪RS‬‬

‫‪Memristor – Memory Resistor‬‬
‫ممریستور یا مموری رزیستور یک عضو الکتریک‌ دارای ۲ ورمینال ات‬
‫‪Home‬‬

‫که در نل یک اروباط کاربردی بی‬

‫1‪F‬‬

‫اته . وقت ه‌ قری هال از ی هک قنه‬
‫ه‬
‫ه‬
‫ه‬

‫بار الکتریک و اهار منناطیسه‌ برقهرار‬
‫وارد عنصرا هود مماوم ه‬
‫ه‬

‫2‪F‬‬

‫افزای‬

‫م‌ یابد و وقت‌ قریال از قنه‬

‫3‪F‬‬

‫کاه‬

‫م‌ یابد.اما زمادیکهه قریهال متوقهف اهد ایه‬

‫4‪F‬‬

‫مماومت‌ را که دااته ات‬

‫5‪F‬‬

‫اروع م‌ اود، مماوم‬

‫‪RS‬‬

‫بود.ای‬

‫الکتریک ه‌‬
‫ه‬

‫مخهالف نل وارد اهود مماومه‬

‫قهز مهدار نخهری‬

‫حفظ مه‌ کنهد و وقته‌ دوبهاره قریهال بهار‬
‫مدار بهه میهزال نخهری‬

‫زمهال فعالیه‬

‫خواههد‬

‫وتی ه در یک محدوده خاص از دمودار قریال بر حسب زمال یک‬

‫عم کرد مماومت‌ با مماوم‬

‫ومریبا خ ‌ دارد.‬
Home

F1

F2

F3

F4

F5

RS

L.Chua,”Resistance switching memories
are memristor”,2011
‫به طور ك ‌، کاربردهای ممریستور را م‌ووال به دو بخ‬
‫بخ‬

‫اول، کاربرد مستمی‬

‫ومسی‬

‫کرد:‬

‫ممریستور در مهداراا دیییتهال و قهاینزین‌ نل بهه عنهوال‬

‫‪Home‬‬

‫عنصر منم‌ از مداراا دیییتال و حهفب ادهواع تی هها و اوصهالها اته . بخه‬

‫دوم‬

‫1‪F‬‬

‫کاربرد ممریستور، خصوصهیاا ااوه‌ ممریسهتور و اهباه‬

‫نل بها تهیناپنها دمه‬

‫2‪F‬‬

‫پرردگوری دارد و مداراا من م‌ و الکترودیک‌ را کامال ً متحول خواهد کهرد. اتهتفاده‬
‫3‪F‬‬

‫4‪F‬‬

‫5‪F‬‬

‫‪RS‬‬

‫از نل در مهداراا قدیهد و معماریههای قدیهد و ادمالبه‌ اته‬
‫ه‬
‫ه‬
‫ه‬
‫ه‬
‫ه‬

‫کهه بهه اهدا نینهده‬
‫ه‬
‫ه‬
‫ه ه‬

‫تیست های الکترودیک‌ را وح وأثیر قرار داده و دادش‌ قدیهد را پدیهد خواههد نورد.‬
‫در ای‬

‫حال ، عالوه بر قاب ی های کوچک، ترع‬

‫ووقه قرار م‌تیرد.‬

‫باال و ادرژی مصرف‌ ک ، نل مهورد‬
‫‪Home‬‬

‫فصل سوم ...‬

‫1‪F‬‬

‫2‪F‬‬

‫3‪F‬‬

‫4‪F‬‬

‫5‪F‬‬

‫‪RS‬‬

‫• بررسی ساختار المان‬
: ‫تاختار ممریستور‬
Home

F1

F2

F3

Figure : A simple memristor-based memory array showing how a memristor device
is located at the intersection between two bars of the array.

F4

F5

RS

Mohammed Affan Zidan,” Memristor-based Memory: The Sneak Paths Problem
and Solutions”
Preprint submitted to Microelectronics Journal October 29, 2012
Home

F1

F2

F3

F4

F5

RS

Figure : Showing crossbar architecture and magnified memristive switch
‫تاختار ممریستور :‬
‫‪Home‬‬

‫1‪F‬‬

‫2‪F‬‬

‫3‪F‬‬

‫4‪F‬‬

‫5‪F‬‬

‫‪RS‬‬
‫‪Home‬‬

‫فصل چهارم ...‬

‫1‪F‬‬

‫2‪F‬‬

‫3‪F‬‬

‫4‪F‬‬

‫5‪F‬‬

‫‪RS‬‬

‫• توابع ریاضی‬
: ‫ونییر اار در المادنا‬
Home

F1

F2

F3

F4

F5

RS

Omid Kavehci ,” The Fourth Element: Insights into the Memristor “
IEEE 2009
:‫ووابع ممریستور‬
Home

F1

Resistor

F2

F3

Capacitor

F4

F5

Inductor

Memristor

RS
‫ووابع ممریستور:‬
‫‪Home‬‬

‫1‪F‬‬

‫2‪F‬‬

‫3‪F‬‬

‫4‪F‬‬

‫5‪F‬‬

‫‪RS‬‬
Home

F1

F2

F3

F4

F5

RS
Home

F1

F2

F3

F4

F5

RS
Home

F1

F2

F3

F4

F5

RS
Home

F1

F2

F3

F4

F5

RS
Home

F1

F2

F3

F4

F5

RS
‫‪Home‬‬

‫فصل پنجم ...‬

‫1‪F‬‬

‫2‪F‬‬

‫3‪F‬‬

‫4‪F‬‬

‫5‪F‬‬

‫‪RS‬‬

‫•سنسورهای دما‬
‫با استفاده ممریستور‬
‫سنسور دمای اسپینترونیک ممریستور‬

‫کاربرد ممریستور :‬

‫عنهههوال اتهههنینترودیک از وشهههابه ایههه‬
‫‪Home‬‬

‫حهههوزه بههها رقیهههب‬

‫(یا همکهار) تهنت‌ خهود یعنه‌ الکترودیهک ریشهه ترفتهه‬

‫1‪F‬‬

‫ات . در ایم‌ خواددهای‬

‫2‪F‬‬

‫از اراا بنیادی به غیر از بهار الکتریکه‌ و قهرم ، خاصهی‬

‫3‪F‬‬

‫دینری به دام اتنی‬

‫ه‬

‫که الکترولها و برخه‌ دینهر‬

‫داردد که یکه‌ از خهواص ااوه‌‬

‫الکترول به حساب م‌نید‬
‫4‪F‬‬

‫5‪F‬‬

‫‪RS‬‬

‫الکترول در او‬

‫، عالوه بر ای‬

‫که وح‬

‫وأثیر دیروی قاابهه‬

‫هسهههته ، ب هههه دور نل م‌چرخ هههد، دارای ی هههک حرک ههه‬
‫ه‬
‫ه‬
‫ه‬
‫ه‬
‫ه‬
‫چرخش‌ به دور خود دیز م‌بااهد. ایه‬

‫اص الحا اتنی‬

‫الکترول م‌تویند.‬

‫دهوع چهرخ‬

‫را‬
‫سنسور دمای اسپینترونیک ممریستور‬
‫کاربرد ممریستور :‬

‫اثراا دوتال حرارو‌ بر رفتار الکتریک‌ یک ممریستور اتنینترودیک بر اتاس‬

‫‪Home‬‬

‫1‪F‬‬

‫2‪F‬‬

‫3‪F‬‬

‫4‪F‬‬

‫5‪F‬‬

‫‪RS‬‬

‫چههرخ‬

‫تشههتاور دااهه‌ از حرکهه‬

‫دیههوار دامنههه دشههال داده مهه‌ اههود .‬

‫وابستن‌ به مواد، هندته، و قدرا وحریک الکتریکه‌ قهوی، رفتهار دتهتناه‬
‫الکترودیک‌ مه‌ ووادنهد بهه صهورا حسهاس و غیهر حسهاس بهه ونییهراا دمها‬
‫بااند.‬
‫اتم س ا س‬
‫سا‬
‫ایرسمطرسا‬
‫ایسمت ایی ارامسرستا‬
‫سفا‬
‫ا‬
‫ایزم اساسیسا‬
‫مکا‬
‫ی رمسیمسپرشمنسیسمیسمطملمیز سدمسیزتاراسدرسمایهااسامس اتس‬

‫عن انس"سمستمسهیمسمطرستم سچرخشیس" ارائاسشدهساست‬
‫سنسور دمای اسپینترونیک ممریستور‬

‫‪Home‬‬

‫1‪F‬‬

‫2‪F‬‬

‫‪ D‬طول چرخ‬

‫‪X‬موقعی‬

‫دریچه‬

‫دیوار دامنه‬

‫3‪F‬‬

‫4‪F‬‬

‫5‪F‬‬

‫‪RS‬‬

‫مماوم‬

‫حوزه زماد‌ دتتناه به موقعی‬

‫دیوار دامنه بستن‌ دارد.‬

‫‪R (T) = RH - (RH - RL) X (T) / D‬‬
‫سنسور دمای اسپینترونیک ممریستور‬

‫‪R (T) = RH - (RH - RL) X (T) / D‬‬
‫‪Home‬‬

‫1‪F‬‬

‫2‪F‬‬

‫3‪F‬‬

‫4‪F‬‬

‫5‪F‬‬

‫‪RS‬‬

‫ترع‬

‫متوتل ​​دامنه دیوار به عنوال یک وابع از قریال درمال چنال‌ برای دماط‬

‫مخت ف دوتال حرارو‌ در ممیاس های مخت ف چنال‌ قریال درمالیزه اده ات‬

‫.‬
‫سنسور دمای اسپینترونیک ممریستور‬

‫‪Home‬‬

‫1‪F‬‬

‫2‪F‬‬

‫3‪F‬‬

‫4‪F‬‬

‫5‪F‬‬

‫‪RS‬‬

‫مماومههه‬

‫ممریسهههتور اتهههنینترودیک بهههه عنهههوال وهههابع‌ از زمهههال در درقهههه حهههرارا مخت هههف‬

‫(003‪ )400K ،350K ،K‬برای یک پالن ولتاژ با اددازه ثاب .‬
Home

Analysis of temperature influence on titanium-dioxide

F1

memristor characteristics at pulse mode

F2

F3

Valeri Mladenov

F4

Dept. of Theoretical Electrical Engineering

Technical University of Sofia
Sofia, Republic of Bulgaria
E-mail: valerim@tu-sofia.bg

Stoyan Kirilov

F5

Dept. of Theoretical Electrical Engineering

RS

Technical University of Sofia
Sofia, Republic of Bulgaria
E-mail: s_kirilov@tu-sofia.bg
The Memristor
consists of two sub-layers
Home

TITANIUM DIOXIDE
sandwiched between
two platinum electrodes

F1

F2

F3

Some physical relationships between the basic electrical quantities of

F4

the memristor are presented. The resistances of the memristor in opened

F5

and closed states, respectively Roff and Ron are very important

parameters for its operation
The charge carriers’ mobility µv is also one of the basic parameters of
the element

RS
Dependence between Charge Carriers’mobility and Temperature

2cm

Home

F1

F2

F3

F4

F5

reduced

oxidized

an experimental diagram of the relationship between
oxygen vacancies mobility and temperature of pure titanium dioxide is given.

RS
It is interesting that in this

type of material the derivative
of the xperimental curve is
positive

Home

F1

F2

The oxygen vacancies mobility

F3

at room temperature has a
value of
µv= 1.10-14(m2/V.s)

F4

F5

RS
Dependence between Resistances of the Memristor
in open and closed states and the celsius Temperature
Home

An experimental relationship between the specific conductivity of titanium-

F1

dioxide σ and the absolute temperature T is presented in
F2

The quantities on the axes are in logarithmic scale. The dependence

F3

between them is approximately presented with
F4

F5

RS
Home

F1

F2

F3

F4

F5

The relationship between ROFF and the Celsius temperature t0 is

presented. It is obvious that the resistance ROFF decreases lightly with
increasing the temperature

RS
Home

F1

F2

F3

F4

The relationship between RON and the Celsius temperature t0 is shown.
The resistance in closed state decreases with increasing the temperature.
The character of these relationships is due to the thermal generation of
charge carriers in this type semiconductor material. The changing of these
resistances is non-desirable at a working mode

F5

RS
SYNTHESIS AND ANALYSIS OF A SIMULINK MODEL
OF A SIMPLE MEMRISTOR CIRCUIT AT IMPULSE MODE
The basic relationship between memristor current i(t)

and voltage across it u(t) is presented

Home

F1

F2

F3

F4

F5

q(t0) is the initial charge in the doped region.
QD is the quantity of charges which the memristor could memorize in its.

RS
This quantity QD :
Home

The constant D is the length of the whole memristor

F1

F2

F3

The Temperature dependence of

F4

the maximal charge memorized

F5

in the Memristor Qd is presented

RS

in Figure
Home

F1

F2

F3

F4

F5

RS

The electrical scheme of the circuit investigated is shown
Home

F1

F2

F3

F4

F5

RS

The time diagrams of memristor current and charge accumulated
in the memristor are presented at different temperatures
Home

F1

F2

Time diagram of

F3

memristor current at
temperatures -50, -25

F4

and 0 degrees Celsius

F5

RS

It is clear that when the ambient temperature increases, the current
intensity increases too. But this effect is more obvious at
low temperatures
Home

F1

F2

Time diagram of
memristor current at
temperatures 25, 50

F3

F4

F5

and 75 degrees Celsius
RS

In the temperature range between 25 and 75 degrees
Celsius this effect has very slight influence on the increasing

of the current magnitude
The influence of the temperature on the charge
accumulated in the memristor is presented
Home

F1

F2

F3

F4

F5

RS

Time diagram of memristor charge q

Time diagram of memristor charge q

at temperatures -50, -25 and 0

at temperatures 25, 50 and 75

degrees Celsius, at qt0/ Qd = 0,5

degrees Celsius, at qt0/ Qd = 0,7
Home

F1

F2

F3

F4

F5

RS

The current-voltage characteristics of the memristor at
different temperatures
The power consumed by the memristor cell at several
different temperatures is given in Figure
Home

F1

F2

F3

F4

F5

RS

Time diagrams of the memristor

Time diagrams of the memristor

power consumed at temperatures

power consumed at temperatures

-50, -25 and 0 degrees Celsius

25, 50 and 75 degrees Celsius
investigation of the inner diffusion processes in
the Williams’s Memristor
Home

F1

F2

F3

This concentration gradient of the oxygen vacancies causes diffusion from

F4

the doped layer to the undoped region which is equivalent to flowing of a

F5

diffusion current. The density of this diffusion current J [A/m2]is

RS

presented by the first Fick’s law
* J [A/m2] density of this diffusion current is presented by
the first Fick’s law
Home

F1

F2

F3

* X is the coordinate in which the diffusion realizes
* N [m-3] is the volumetric concentration of oxygen vacancies
* D [m2/s] is the diffusion coefficient
* q= 2.e=3.2.10^-19 is the charge of an oxygen vacancy

F4

F5

RS
Home

F1

F2

F3

F4

* D [m2/s] is the diffusion coefficient
•

Boltzmann constant
kB= 1,3787*10-23[J/K]

F5

RS
Home

F1

F2

F3

F4

F5

RS

Relationship between the coefficient of
inner diffusion D and the celsius Temperature
The volume of a memristor cell may be calculated as a volume
of rectangular parallelepiped with length l=10 nm, width a=50

nmand height b=50 nm:

Home

F1

F2

F3

F4

F5

RS
The density of titanium-dioxide is
ρ= 4230 [kg/m3]

Its molar weight is
M(TiO2)= 79,88 [g/mol]

Home

F1

F2

F3

The weight of a molecule of TiO2 is:
F4

F5

RS
The number of the molecules of TiO2 in 1 m3 is :
Home

F1

F2

The number of the molecules of TiO2 in 1 m3 is :

F3

F4

F5

The number of oxygen vacancies in the doped layer is :

RS
The ionic diameter of an oxygen vacancy has approximate

value of d = 0,2 nm ;
The number of atomic layers in the doped region is:

Home

F1

F2

F3

The number of oxygen vacancies nearest to the boundary

F4

between the two sub-layers is:

F5

RS
The surface concentration of oxygen vacancies Q0 is:

Home

F1

F2

F3

F4

F5

RS
The second Fick’s law :
Home

F1

The initial and the limit conditions are:

F2

F3

F4

F5

RS
The initial and the limit conditions are:
Home

F1

F2

F3

The solution of above Eq

F4

F5

RS
The initial and the limit conditions are:
Home

F1

F2

The solution of above Eq

F3

F4

F5

RS
Home

F1

F2

F3

F4

F5

RS

Relationship between the concentration of oxygen

vacancies N and the length of penetration of the charges
CONCLUSIONS
It is clear from the results presented above that with increasing
Home

the temperature the charge carriers’ mobility increases too but the
resistances of the memristor

at opened and closed states

decrease. As a result at absolute temperature of T= 400 K the

whole charge of the memristor that it can memorize is about 100
times less than its value at a room temperature. The current

F1

F2

F3

F4

through the memristor investigated is higher than the current at

room temperature. So the quickness of the memristor increases too
and the operational mode changes. But the characteristics of the
memristor as an electronic switch are worse at high temperature.

F5

RS
‫منابع وحمیق‬
[1] Chua, L. O.” Memristor – The Missing Circuit Element.” IEEE Trans. on Circuit

Home

Theory, Vol. CT-18, pp. 507-519, September 1971.
[2] Strukov, D. B., G. S. Snider, D. R. Stewart, R. S. Williams. “The

F1

missing memristor found.” Nature, doi:10.1038/nature06932, Vol 453,

F2

pp. 80 – 83,1 May 2008.

F3

[3] Tour, J. M., T. He. “The fourth element.” Nature, Vol. 453, pp. 42 – 43,

F4

1 May 2008.
F5

[4] Dmitri Strukov,” Memristors & Their Applications”, Hewlett-Packard Labs, Palo
Alto, CA USA

[5] Hayes, B. “The memristor.” Computing science, American Scientist,
Volume 99, pp.106 – 110, 2011.

RS
‫منابع وحمیق‬
Home

[6] Xiaobin Wang, Yiran Chen ,” Spintronic Memristor Devices and
Application”,IEEE 978-3-9810801-6-2/DATE10 © 2010 EDAA

[7] Zaplatilek, K. Memristor modeling in MATLAB & SIMULINK.

F1

F2

Proceedings of the European Computing Conference, pp. 62 – 67.
F3

[8] Xiaobin Wang ,” Spintronic Memristor Through Spin-Torque-Induced

Magnetization Motion”, IEEE 0741-3106/$25.00 © 2009
[9] Valeri Mladenov & Stoyan Kirilov ,” Analysis of temperature influence on
titaniumdioxide memristor characteristics at pulse mode”,ISTET 2013
[10] A. Walsh, R. Carley, O. Feely, A. Ascoli,”Memristor Toolbar”, European
Conference on Circuit Theory and Design, Dresden, September 2013

F4

F5

RS
R

MEMRISTOR
MEM
RISTOR
SUBMIT BY:

Ramin vaghar Mousavi
Link me:
www.favaforum.ir
rvagharmosavi@tvu.ac.ir
rvagharmosavi@yahoo.com
THE END

February 2014

More Related Content

Featured

AI Trends in Creative Operations 2024 by Artwork Flow.pdf
AI Trends in Creative Operations 2024 by Artwork Flow.pdfAI Trends in Creative Operations 2024 by Artwork Flow.pdf
AI Trends in Creative Operations 2024 by Artwork Flow.pdf
marketingartwork
 
Skeleton Culture Code
Skeleton Culture CodeSkeleton Culture Code
Skeleton Culture Code
Skeleton Technologies
 
PEPSICO Presentation to CAGNY Conference Feb 2024
PEPSICO Presentation to CAGNY Conference Feb 2024PEPSICO Presentation to CAGNY Conference Feb 2024
PEPSICO Presentation to CAGNY Conference Feb 2024
Neil Kimberley
 
Content Methodology: A Best Practices Report (Webinar)
Content Methodology: A Best Practices Report (Webinar)Content Methodology: A Best Practices Report (Webinar)
Content Methodology: A Best Practices Report (Webinar)
contently
 
How to Prepare For a Successful Job Search for 2024
How to Prepare For a Successful Job Search for 2024How to Prepare For a Successful Job Search for 2024
How to Prepare For a Successful Job Search for 2024
Albert Qian
 
Social Media Marketing Trends 2024 // The Global Indie Insights
Social Media Marketing Trends 2024 // The Global Indie InsightsSocial Media Marketing Trends 2024 // The Global Indie Insights
Social Media Marketing Trends 2024 // The Global Indie Insights
Kurio // The Social Media Age(ncy)
 
Trends In Paid Search: Navigating The Digital Landscape In 2024
Trends In Paid Search: Navigating The Digital Landscape In 2024Trends In Paid Search: Navigating The Digital Landscape In 2024
Trends In Paid Search: Navigating The Digital Landscape In 2024
Search Engine Journal
 
5 Public speaking tips from TED - Visualized summary
5 Public speaking tips from TED - Visualized summary5 Public speaking tips from TED - Visualized summary
5 Public speaking tips from TED - Visualized summary
SpeakerHub
 
ChatGPT and the Future of Work - Clark Boyd
ChatGPT and the Future of Work - Clark Boyd ChatGPT and the Future of Work - Clark Boyd
ChatGPT and the Future of Work - Clark Boyd
Clark Boyd
 
Getting into the tech field. what next
Getting into the tech field. what next Getting into the tech field. what next
Getting into the tech field. what next
Tessa Mero
 
Google's Just Not That Into You: Understanding Core Updates & Search Intent
Google's Just Not That Into You: Understanding Core Updates & Search IntentGoogle's Just Not That Into You: Understanding Core Updates & Search Intent
Google's Just Not That Into You: Understanding Core Updates & Search Intent
Lily Ray
 
How to have difficult conversations
How to have difficult conversations How to have difficult conversations
How to have difficult conversations
Rajiv Jayarajah, MAppComm, ACC
 
Introduction to Data Science
Introduction to Data ScienceIntroduction to Data Science
Introduction to Data Science
Christy Abraham Joy
 
Time Management & Productivity - Best Practices
Time Management & Productivity -  Best PracticesTime Management & Productivity -  Best Practices
Time Management & Productivity - Best Practices
Vit Horky
 
The six step guide to practical project management
The six step guide to practical project managementThe six step guide to practical project management
The six step guide to practical project management
MindGenius
 
Beginners Guide to TikTok for Search - Rachel Pearson - We are Tilt __ Bright...
Beginners Guide to TikTok for Search - Rachel Pearson - We are Tilt __ Bright...Beginners Guide to TikTok for Search - Rachel Pearson - We are Tilt __ Bright...
Beginners Guide to TikTok for Search - Rachel Pearson - We are Tilt __ Bright...
RachelPearson36
 
Unlocking the Power of ChatGPT and AI in Testing - A Real-World Look, present...
Unlocking the Power of ChatGPT and AI in Testing - A Real-World Look, present...Unlocking the Power of ChatGPT and AI in Testing - A Real-World Look, present...
Unlocking the Power of ChatGPT and AI in Testing - A Real-World Look, present...
Applitools
 
12 Ways to Increase Your Influence at Work
12 Ways to Increase Your Influence at Work12 Ways to Increase Your Influence at Work
12 Ways to Increase Your Influence at Work
GetSmarter
 
ChatGPT webinar slides
ChatGPT webinar slidesChatGPT webinar slides
ChatGPT webinar slides
Alireza Esmikhani
 
More than Just Lines on a Map: Best Practices for U.S Bike Routes
More than Just Lines on a Map: Best Practices for U.S Bike RoutesMore than Just Lines on a Map: Best Practices for U.S Bike Routes
More than Just Lines on a Map: Best Practices for U.S Bike Routes
Project for Public Spaces & National Center for Biking and Walking
 

Featured (20)

AI Trends in Creative Operations 2024 by Artwork Flow.pdf
AI Trends in Creative Operations 2024 by Artwork Flow.pdfAI Trends in Creative Operations 2024 by Artwork Flow.pdf
AI Trends in Creative Operations 2024 by Artwork Flow.pdf
 
Skeleton Culture Code
Skeleton Culture CodeSkeleton Culture Code
Skeleton Culture Code
 
PEPSICO Presentation to CAGNY Conference Feb 2024
PEPSICO Presentation to CAGNY Conference Feb 2024PEPSICO Presentation to CAGNY Conference Feb 2024
PEPSICO Presentation to CAGNY Conference Feb 2024
 
Content Methodology: A Best Practices Report (Webinar)
Content Methodology: A Best Practices Report (Webinar)Content Methodology: A Best Practices Report (Webinar)
Content Methodology: A Best Practices Report (Webinar)
 
How to Prepare For a Successful Job Search for 2024
How to Prepare For a Successful Job Search for 2024How to Prepare For a Successful Job Search for 2024
How to Prepare For a Successful Job Search for 2024
 
Social Media Marketing Trends 2024 // The Global Indie Insights
Social Media Marketing Trends 2024 // The Global Indie InsightsSocial Media Marketing Trends 2024 // The Global Indie Insights
Social Media Marketing Trends 2024 // The Global Indie Insights
 
Trends In Paid Search: Navigating The Digital Landscape In 2024
Trends In Paid Search: Navigating The Digital Landscape In 2024Trends In Paid Search: Navigating The Digital Landscape In 2024
Trends In Paid Search: Navigating The Digital Landscape In 2024
 
5 Public speaking tips from TED - Visualized summary
5 Public speaking tips from TED - Visualized summary5 Public speaking tips from TED - Visualized summary
5 Public speaking tips from TED - Visualized summary
 
ChatGPT and the Future of Work - Clark Boyd
ChatGPT and the Future of Work - Clark Boyd ChatGPT and the Future of Work - Clark Boyd
ChatGPT and the Future of Work - Clark Boyd
 
Getting into the tech field. what next
Getting into the tech field. what next Getting into the tech field. what next
Getting into the tech field. what next
 
Google's Just Not That Into You: Understanding Core Updates & Search Intent
Google's Just Not That Into You: Understanding Core Updates & Search IntentGoogle's Just Not That Into You: Understanding Core Updates & Search Intent
Google's Just Not That Into You: Understanding Core Updates & Search Intent
 
How to have difficult conversations
How to have difficult conversations How to have difficult conversations
How to have difficult conversations
 
Introduction to Data Science
Introduction to Data ScienceIntroduction to Data Science
Introduction to Data Science
 
Time Management & Productivity - Best Practices
Time Management & Productivity -  Best PracticesTime Management & Productivity -  Best Practices
Time Management & Productivity - Best Practices
 
The six step guide to practical project management
The six step guide to practical project managementThe six step guide to practical project management
The six step guide to practical project management
 
Beginners Guide to TikTok for Search - Rachel Pearson - We are Tilt __ Bright...
Beginners Guide to TikTok for Search - Rachel Pearson - We are Tilt __ Bright...Beginners Guide to TikTok for Search - Rachel Pearson - We are Tilt __ Bright...
Beginners Guide to TikTok for Search - Rachel Pearson - We are Tilt __ Bright...
 
Unlocking the Power of ChatGPT and AI in Testing - A Real-World Look, present...
Unlocking the Power of ChatGPT and AI in Testing - A Real-World Look, present...Unlocking the Power of ChatGPT and AI in Testing - A Real-World Look, present...
Unlocking the Power of ChatGPT and AI in Testing - A Real-World Look, present...
 
12 Ways to Increase Your Influence at Work
12 Ways to Increase Your Influence at Work12 Ways to Increase Your Influence at Work
12 Ways to Increase Your Influence at Work
 
ChatGPT webinar slides
ChatGPT webinar slidesChatGPT webinar slides
ChatGPT webinar slides
 
More than Just Lines on a Map: Best Practices for U.S Bike Routes
More than Just Lines on a Map: Best Practices for U.S Bike RoutesMore than Just Lines on a Map: Best Practices for U.S Bike Routes
More than Just Lines on a Map: Best Practices for U.S Bike Routes
 

Memristor temperature sensor(submit by ramin vaghar mousavi)

  • 1. ‫پروژه درس مدارهای واسط‬ ‫استاد :/ جنـاب آقای دکتـر عـبدی‬ ‫دانشجو:/ رامین وقار موسوی / رشته الکترونیک‬ ‫دانشگاه :/ پردیس علوم و تحقیقات خراسان شمالی/ 2931‬
  • 2. ‫فهرست مطالب :‬ ‫‪Home‬‬ ‫1‪F‬‬ ‫2‪F‬‬ ‫@ مقدمه‬ ‫@ فصل اول : ادبیات تحقیق‬ ‫@ فصل دوم :عنصری پایه در الکترونیک‬ ‫3‪F‬‬ ‫4‪F‬‬ ‫5‪F‬‬ ‫‪RS‬‬ ‫@ فصل سوم :بررسی ساختار المان‬ ‫@ فصل چهارم:توابع ریاضی‬ ‫@ فصل پنجم :سنسورهای دما با استفاده از ممریستور‬ ‫@ نتیجه گیری‬ ‫@ منابع‬
  • 3. ‫مقدمه...‬ ‫‪Home‬‬ ‫1‪F‬‬ ‫ممریستور ‪: Memristor‬‬ ‫2‪F‬‬ ‫مخفف واژه ‪ Memory Resistor‬به معنای پایدار کننده حافظهه اته . از لحها‬ ‫3‪F‬‬ ‫4‪F‬‬ ‫5‪F‬‬ ‫تخ‬ ‫افزاری، یک ابزار میکروتکوپیک ات‬ ‫کهه م‌ووادهد اهرایل الکتریکه‌‬ ‫ماقبل خود را حفظ کند‬ ‫‪Memory Resistor‬‬ ‫‪RS‬‬ ‫‪Memristor‬‬
  • 7. Home F1 F2 LEON 0. CHUA Memristor-The Missing Circuit Element F3 F4 IEEE TRANSACTIONS ON CIRCUIT THEORY, VOL. CT-18, NO. 5, SEPTEMBER 1971 F5 RS 4 fundamental circuit elements
  • 10. ‫ممریستور ‪: Memristor‬‬ ‫عنصر غیر فعال دو تهری کهه مادنهد مماومه ، خهازل و ته ف (تهی‬ ‫‪Home‬‬ ‫1‪F‬‬ ‫پیچ) به عنوال عنصر پایهه در مهداراا الکتریکه‌ م هره اهده اته‬ ‫تردوات‌ همچول ورادزیستور در ادتظهار نل اته .داده‬ ‫2‪F‬‬ ‫برق بها اتهتفاده از حهروب قبهل و ایه‬ ‫3‪F‬‬ ‫و‬ ‫منندته‌‬ ‫حهرب قدیهد، قابهل بازدویسه‌‬ ‫ات‬ ‫4‪F‬‬ ‫5‪F‬‬ ‫‪RS‬‬ ‫‪Memristor – Memory Resistor‬‬
  • 11. ‫ممریستور یا مموری رزیستور یک عضو الکتریک‌ دارای ۲ ورمینال ات‬ ‫‪Home‬‬ ‫که در نل یک اروباط کاربردی بی‬ ‫1‪F‬‬ ‫اته . وقت ه‌ قری هال از ی هک قنه‬ ‫ه‬ ‫ه‬ ‫ه‬ ‫بار الکتریک و اهار منناطیسه‌ برقهرار‬ ‫وارد عنصرا هود مماوم ه‬ ‫ه‬ ‫2‪F‬‬ ‫افزای‬ ‫م‌ یابد و وقت‌ قریال از قنه‬ ‫3‪F‬‬ ‫کاه‬ ‫م‌ یابد.اما زمادیکهه قریهال متوقهف اهد ایه‬ ‫4‪F‬‬ ‫مماومت‌ را که دااته ات‬ ‫5‪F‬‬ ‫اروع م‌ اود، مماوم‬ ‫‪RS‬‬ ‫بود.ای‬ ‫الکتریک ه‌‬ ‫ه‬ ‫مخهالف نل وارد اهود مماومه‬ ‫قهز مهدار نخهری‬ ‫حفظ مه‌ کنهد و وقته‌ دوبهاره قریهال بهار‬ ‫مدار بهه میهزال نخهری‬ ‫زمهال فعالیه‬ ‫خواههد‬ ‫وتی ه در یک محدوده خاص از دمودار قریال بر حسب زمال یک‬ ‫عم کرد مماومت‌ با مماوم‬ ‫ومریبا خ ‌ دارد.‬
  • 13. ‫به طور ك ‌، کاربردهای ممریستور را م‌ووال به دو بخ‬ ‫بخ‬ ‫اول، کاربرد مستمی‬ ‫ومسی‬ ‫کرد:‬ ‫ممریستور در مهداراا دیییتهال و قهاینزین‌ نل بهه عنهوال‬ ‫‪Home‬‬ ‫عنصر منم‌ از مداراا دیییتال و حهفب ادهواع تی هها و اوصهالها اته . بخه‬ ‫دوم‬ ‫1‪F‬‬ ‫کاربرد ممریستور، خصوصهیاا ااوه‌ ممریسهتور و اهباه‬ ‫نل بها تهیناپنها دمه‬ ‫2‪F‬‬ ‫پرردگوری دارد و مداراا من م‌ و الکترودیک‌ را کامال ً متحول خواهد کهرد. اتهتفاده‬ ‫3‪F‬‬ ‫4‪F‬‬ ‫5‪F‬‬ ‫‪RS‬‬ ‫از نل در مهداراا قدیهد و معماریههای قدیهد و ادمالبه‌ اته‬ ‫ه‬ ‫ه‬ ‫ه‬ ‫ه‬ ‫ه‬ ‫کهه بهه اهدا نینهده‬ ‫ه‬ ‫ه‬ ‫ه ه‬ ‫تیست های الکترودیک‌ را وح وأثیر قرار داده و دادش‌ قدیهد را پدیهد خواههد نورد.‬ ‫در ای‬ ‫حال ، عالوه بر قاب ی های کوچک، ترع‬ ‫ووقه قرار م‌تیرد.‬ ‫باال و ادرژی مصرف‌ ک ، نل مهورد‬
  • 15. : ‫تاختار ممریستور‬ Home F1 F2 F3 Figure : A simple memristor-based memory array showing how a memristor device is located at the intersection between two bars of the array. F4 F5 RS Mohammed Affan Zidan,” Memristor-based Memory: The Sneak Paths Problem and Solutions” Preprint submitted to Microelectronics Journal October 29, 2012
  • 16. Home F1 F2 F3 F4 F5 RS Figure : Showing crossbar architecture and magnified memristive switch
  • 19. : ‫ونییر اار در المادنا‬ Home F1 F2 F3 F4 F5 RS Omid Kavehci ,” The Fourth Element: Insights into the Memristor “ IEEE 2009
  • 28. ‫سنسور دمای اسپینترونیک ممریستور‬ ‫کاربرد ممریستور :‬ ‫عنهههوال اتهههنینترودیک از وشهههابه ایههه‬ ‫‪Home‬‬ ‫حهههوزه بههها رقیهههب‬ ‫(یا همکهار) تهنت‌ خهود یعنه‌ الکترودیهک ریشهه ترفتهه‬ ‫1‪F‬‬ ‫ات . در ایم‌ خواددهای‬ ‫2‪F‬‬ ‫از اراا بنیادی به غیر از بهار الکتریکه‌ و قهرم ، خاصهی‬ ‫3‪F‬‬ ‫دینری به دام اتنی‬ ‫ه‬ ‫که الکترولها و برخه‌ دینهر‬ ‫داردد که یکه‌ از خهواص ااوه‌‬ ‫الکترول به حساب م‌نید‬ ‫4‪F‬‬ ‫5‪F‬‬ ‫‪RS‬‬ ‫الکترول در او‬ ‫، عالوه بر ای‬ ‫که وح‬ ‫وأثیر دیروی قاابهه‬ ‫هسهههته ، ب هههه دور نل م‌چرخ هههد، دارای ی هههک حرک ههه‬ ‫ه‬ ‫ه‬ ‫ه‬ ‫ه‬ ‫ه‬ ‫چرخش‌ به دور خود دیز م‌بااهد. ایه‬ ‫اص الحا اتنی‬ ‫الکترول م‌تویند.‬ ‫دهوع چهرخ‬ ‫را‬
  • 29. ‫سنسور دمای اسپینترونیک ممریستور‬ ‫کاربرد ممریستور :‬ ‫اثراا دوتال حرارو‌ بر رفتار الکتریک‌ یک ممریستور اتنینترودیک بر اتاس‬ ‫‪Home‬‬ ‫1‪F‬‬ ‫2‪F‬‬ ‫3‪F‬‬ ‫4‪F‬‬ ‫5‪F‬‬ ‫‪RS‬‬ ‫چههرخ‬ ‫تشههتاور دااهه‌ از حرکهه‬ ‫دیههوار دامنههه دشههال داده مهه‌ اههود .‬ ‫وابستن‌ به مواد، هندته، و قدرا وحریک الکتریکه‌ قهوی، رفتهار دتهتناه‬ ‫الکترودیک‌ مه‌ ووادنهد بهه صهورا حسهاس و غیهر حسهاس بهه ونییهراا دمها‬ ‫بااند.‬ ‫اتم س ا س‬ ‫سا‬ ‫ایرسمطرسا‬ ‫ایسمت ایی ارامسرستا‬ ‫سفا‬ ‫ا‬ ‫ایزم اساسیسا‬ ‫مکا‬ ‫ی رمسیمسپرشمنسیسمیسمطملمیز سدمسیزتاراسدرسمایهااسامس اتس‬ ‫عن انس"سمستمسهیمسمطرستم سچرخشیس" ارائاسشدهساست‬
  • 30. ‫سنسور دمای اسپینترونیک ممریستور‬ ‫‪Home‬‬ ‫1‪F‬‬ ‫2‪F‬‬ ‫‪ D‬طول چرخ‬ ‫‪X‬موقعی‬ ‫دریچه‬ ‫دیوار دامنه‬ ‫3‪F‬‬ ‫4‪F‬‬ ‫5‪F‬‬ ‫‪RS‬‬ ‫مماوم‬ ‫حوزه زماد‌ دتتناه به موقعی‬ ‫دیوار دامنه بستن‌ دارد.‬ ‫‪R (T) = RH - (RH - RL) X (T) / D‬‬
  • 31. ‫سنسور دمای اسپینترونیک ممریستور‬ ‫‪R (T) = RH - (RH - RL) X (T) / D‬‬ ‫‪Home‬‬ ‫1‪F‬‬ ‫2‪F‬‬ ‫3‪F‬‬ ‫4‪F‬‬ ‫5‪F‬‬ ‫‪RS‬‬ ‫ترع‬ ‫متوتل ​​دامنه دیوار به عنوال یک وابع از قریال درمال چنال‌ برای دماط‬ ‫مخت ف دوتال حرارو‌ در ممیاس های مخت ف چنال‌ قریال درمالیزه اده ات‬ ‫.‬
  • 32. ‫سنسور دمای اسپینترونیک ممریستور‬ ‫‪Home‬‬ ‫1‪F‬‬ ‫2‪F‬‬ ‫3‪F‬‬ ‫4‪F‬‬ ‫5‪F‬‬ ‫‪RS‬‬ ‫مماومههه‬ ‫ممریسهههتور اتهههنینترودیک بهههه عنهههوال وهههابع‌ از زمهههال در درقهههه حهههرارا مخت هههف‬ ‫(003‪ )400K ،350K ،K‬برای یک پالن ولتاژ با اددازه ثاب .‬
  • 33. Home Analysis of temperature influence on titanium-dioxide F1 memristor characteristics at pulse mode F2 F3 Valeri Mladenov F4 Dept. of Theoretical Electrical Engineering Technical University of Sofia Sofia, Republic of Bulgaria E-mail: valerim@tu-sofia.bg Stoyan Kirilov F5 Dept. of Theoretical Electrical Engineering RS Technical University of Sofia Sofia, Republic of Bulgaria E-mail: s_kirilov@tu-sofia.bg
  • 34. The Memristor consists of two sub-layers Home TITANIUM DIOXIDE sandwiched between two platinum electrodes F1 F2 F3 Some physical relationships between the basic electrical quantities of F4 the memristor are presented. The resistances of the memristor in opened F5 and closed states, respectively Roff and Ron are very important parameters for its operation The charge carriers’ mobility µv is also one of the basic parameters of the element RS
  • 35. Dependence between Charge Carriers’mobility and Temperature 2cm Home F1 F2 F3 F4 F5 reduced oxidized an experimental diagram of the relationship between oxygen vacancies mobility and temperature of pure titanium dioxide is given. RS
  • 36. It is interesting that in this type of material the derivative of the xperimental curve is positive Home F1 F2 The oxygen vacancies mobility F3 at room temperature has a value of µv= 1.10-14(m2/V.s) F4 F5 RS
  • 37. Dependence between Resistances of the Memristor in open and closed states and the celsius Temperature Home An experimental relationship between the specific conductivity of titanium- F1 dioxide σ and the absolute temperature T is presented in F2 The quantities on the axes are in logarithmic scale. The dependence F3 between them is approximately presented with F4 F5 RS
  • 38. Home F1 F2 F3 F4 F5 The relationship between ROFF and the Celsius temperature t0 is presented. It is obvious that the resistance ROFF decreases lightly with increasing the temperature RS
  • 39. Home F1 F2 F3 F4 The relationship between RON and the Celsius temperature t0 is shown. The resistance in closed state decreases with increasing the temperature. The character of these relationships is due to the thermal generation of charge carriers in this type semiconductor material. The changing of these resistances is non-desirable at a working mode F5 RS
  • 40. SYNTHESIS AND ANALYSIS OF A SIMULINK MODEL OF A SIMPLE MEMRISTOR CIRCUIT AT IMPULSE MODE The basic relationship between memristor current i(t) and voltage across it u(t) is presented Home F1 F2 F3 F4 F5 q(t0) is the initial charge in the doped region. QD is the quantity of charges which the memristor could memorize in its. RS
  • 41. This quantity QD : Home The constant D is the length of the whole memristor F1 F2 F3 The Temperature dependence of F4 the maximal charge memorized F5 in the Memristor Qd is presented RS in Figure
  • 42. Home F1 F2 F3 F4 F5 RS The electrical scheme of the circuit investigated is shown
  • 43. Home F1 F2 F3 F4 F5 RS The time diagrams of memristor current and charge accumulated in the memristor are presented at different temperatures
  • 44. Home F1 F2 Time diagram of F3 memristor current at temperatures -50, -25 F4 and 0 degrees Celsius F5 RS It is clear that when the ambient temperature increases, the current intensity increases too. But this effect is more obvious at low temperatures
  • 45. Home F1 F2 Time diagram of memristor current at temperatures 25, 50 F3 F4 F5 and 75 degrees Celsius RS In the temperature range between 25 and 75 degrees Celsius this effect has very slight influence on the increasing of the current magnitude
  • 46. The influence of the temperature on the charge accumulated in the memristor is presented Home F1 F2 F3 F4 F5 RS Time diagram of memristor charge q Time diagram of memristor charge q at temperatures -50, -25 and 0 at temperatures 25, 50 and 75 degrees Celsius, at qt0/ Qd = 0,5 degrees Celsius, at qt0/ Qd = 0,7
  • 47. Home F1 F2 F3 F4 F5 RS The current-voltage characteristics of the memristor at different temperatures
  • 48. The power consumed by the memristor cell at several different temperatures is given in Figure Home F1 F2 F3 F4 F5 RS Time diagrams of the memristor Time diagrams of the memristor power consumed at temperatures power consumed at temperatures -50, -25 and 0 degrees Celsius 25, 50 and 75 degrees Celsius
  • 49. investigation of the inner diffusion processes in the Williams’s Memristor Home F1 F2 F3 This concentration gradient of the oxygen vacancies causes diffusion from F4 the doped layer to the undoped region which is equivalent to flowing of a F5 diffusion current. The density of this diffusion current J [A/m2]is RS presented by the first Fick’s law
  • 50. * J [A/m2] density of this diffusion current is presented by the first Fick’s law Home F1 F2 F3 * X is the coordinate in which the diffusion realizes * N [m-3] is the volumetric concentration of oxygen vacancies * D [m2/s] is the diffusion coefficient * q= 2.e=3.2.10^-19 is the charge of an oxygen vacancy F4 F5 RS
  • 51. Home F1 F2 F3 F4 * D [m2/s] is the diffusion coefficient • Boltzmann constant kB= 1,3787*10-23[J/K] F5 RS
  • 52. Home F1 F2 F3 F4 F5 RS Relationship between the coefficient of inner diffusion D and the celsius Temperature
  • 53. The volume of a memristor cell may be calculated as a volume of rectangular parallelepiped with length l=10 nm, width a=50 nmand height b=50 nm: Home F1 F2 F3 F4 F5 RS
  • 54. The density of titanium-dioxide is ρ= 4230 [kg/m3] Its molar weight is M(TiO2)= 79,88 [g/mol] Home F1 F2 F3 The weight of a molecule of TiO2 is: F4 F5 RS
  • 55. The number of the molecules of TiO2 in 1 m3 is : Home F1 F2 The number of the molecules of TiO2 in 1 m3 is : F3 F4 F5 The number of oxygen vacancies in the doped layer is : RS
  • 56. The ionic diameter of an oxygen vacancy has approximate value of d = 0,2 nm ; The number of atomic layers in the doped region is: Home F1 F2 F3 The number of oxygen vacancies nearest to the boundary F4 between the two sub-layers is: F5 RS
  • 57. The surface concentration of oxygen vacancies Q0 is: Home F1 F2 F3 F4 F5 RS
  • 58. The second Fick’s law : Home F1 The initial and the limit conditions are: F2 F3 F4 F5 RS
  • 59. The initial and the limit conditions are: Home F1 F2 F3 The solution of above Eq F4 F5 RS
  • 60. The initial and the limit conditions are: Home F1 F2 The solution of above Eq F3 F4 F5 RS
  • 61. Home F1 F2 F3 F4 F5 RS Relationship between the concentration of oxygen vacancies N and the length of penetration of the charges
  • 62. CONCLUSIONS It is clear from the results presented above that with increasing Home the temperature the charge carriers’ mobility increases too but the resistances of the memristor at opened and closed states decrease. As a result at absolute temperature of T= 400 K the whole charge of the memristor that it can memorize is about 100 times less than its value at a room temperature. The current F1 F2 F3 F4 through the memristor investigated is higher than the current at room temperature. So the quickness of the memristor increases too and the operational mode changes. But the characteristics of the memristor as an electronic switch are worse at high temperature. F5 RS
  • 63. ‫منابع وحمیق‬ [1] Chua, L. O.” Memristor – The Missing Circuit Element.” IEEE Trans. on Circuit Home Theory, Vol. CT-18, pp. 507-519, September 1971. [2] Strukov, D. B., G. S. Snider, D. R. Stewart, R. S. Williams. “The F1 missing memristor found.” Nature, doi:10.1038/nature06932, Vol 453, F2 pp. 80 – 83,1 May 2008. F3 [3] Tour, J. M., T. He. “The fourth element.” Nature, Vol. 453, pp. 42 – 43, F4 1 May 2008. F5 [4] Dmitri Strukov,” Memristors & Their Applications”, Hewlett-Packard Labs, Palo Alto, CA USA [5] Hayes, B. “The memristor.” Computing science, American Scientist, Volume 99, pp.106 – 110, 2011. RS
  • 64. ‫منابع وحمیق‬ Home [6] Xiaobin Wang, Yiran Chen ,” Spintronic Memristor Devices and Application”,IEEE 978-3-9810801-6-2/DATE10 © 2010 EDAA [7] Zaplatilek, K. Memristor modeling in MATLAB & SIMULINK. F1 F2 Proceedings of the European Computing Conference, pp. 62 – 67. F3 [8] Xiaobin Wang ,” Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion”, IEEE 0741-3106/$25.00 © 2009 [9] Valeri Mladenov & Stoyan Kirilov ,” Analysis of temperature influence on titaniumdioxide memristor characteristics at pulse mode”,ISTET 2013 [10] A. Walsh, R. Carley, O. Feely, A. Ascoli,”Memristor Toolbar”, European Conference on Circuit Theory and Design, Dresden, September 2013 F4 F5 RS
  • 65.
  • 66.
  • 67.
  • 68.
  • 69.
  • 70.
  • 71.
  • 74. SUBMIT BY: Ramin vaghar Mousavi Link me: www.favaforum.ir rvagharmosavi@tvu.ac.ir rvagharmosavi@yahoo.com