FSI China IC Manufacture Annual Summit 2007 Final

The Financial Benefits of
All Wet Photoresist Removal
for 200mm

China IC Manufacture Annual Summit
Wuxi, China
November 29, 2007
1/15
Copyright © 2007 | FSI International | All Rights Reserved
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Outline
• Ion Implantation and PR Stripping Challenge
• FSI ZETA® System ViPR™ process capability
• Financial Benefit of All-Wet PR stripping
– Process / Production Cycle Time Reduction
– Improved Clean Space Productivity
– Reduced Capital Investment
• FSI ZETA® System Installed Base Update
• Summary

2/15

CMOS – Si Doping by Ion Implantation

15 layers on 90nm and up CMOS process

3/15

Key Factor on Implanted PR removal:
Dopant / Dose / Energy

⊗
dehydrogenated,
amorphous
carbon layer

4/15

Multiple Process Flexibility for IC fabrication
FSI ZETA® System = Batch Spray Technology
Closed Chamber
• FEOL
– All-Wet Photoresist Strip (ViPR™)
– Metal Strip for Salicide Formation
(PlatNiStrip™ )
– Contact Clean

• BEOL
– Cu/low-k Post-Ash Clean
– Al/Cu Post Ash Clean (DSP)

• Back End Process
• Wafer Bumping
– Photoresist Strip
– Flux / Oxide Removal

• General x8 Chemical
– Wafer Reclaim In one tool
Fresh chemical
by POU mixing 5/15

ZETA® System ViPR™ Process
Eliminates Most Ash Steps
Asher

Etch or
ion
implant

Patterned Photoresist

Asher Residue
Anneal
and/or
photo

Clean Wafer
ZETA® G3 6/15

Comparison: ZETA® System vs. Wet Bench
55keV, 1E15 As Implant
Immersion ZETA® System
170°C for 30 min ViPR™ Process 13.5 min

• Residue remains • All PR removed
• Process is not • Direct comparison
feasible in a wet shows ViPR™ process
bench is more effective
7/15

ZETA® System with ViPR™ Capability

1.0E+17
UHD DPG
Gate Requires Ashing
1.0E+16
B-Gap Eng.
Dose (atoms/cm2)

S/D
1.0E+15 Contact
Plug
SDE Engineering FSI’s ViPR™
1.0E+14
Isolation
Technology
Capability
HALO Pocket
1.0E+13 D/Well
Wt / Channel Eng. Twin Well
1.0E+12
Traditional Wet CCD
Process Capability
1.0E+11
0.1 1 10 100 1000 10000

Energy (keV) 8/15

Reduce Production Cycle Time Significantly

Traditional Ash + Wet PR Stripping
Photoresist Ashing Batch Queue Post Ash Clean

gate damage
layer gate
+ gate gate
Capital Cost

FSI’s ViPR™ Process All-Wet PR Stripping
All Wet Strip & Clean

gate gate

25mins 105mins
Process Cycle Time 9/15

Reduce Production Cycle Time Significantly
Ash+Bench
PR Stripping Process Cycle Time FSI Zeta 200 ViPR
30.00

25.00
Process Cycle Time (hr)

20.00
Accumiliated

Cycle time
15.00 Saving

10.00

5.00

0.00
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Mask Layers

10/15

Improve Clean Room Space Efficiency
200mm Wafers
ZETA® System Ash + Wet Bench
All-Wet

Asher Asher
(6M2) (6M2)
Wet Bench > 90WPH >90WPH
(19M2)
>250 WPH Asher
FSI Zeta 200 (6M2)
ViPR
(6.3 M2) >90WPH
> 250 WPH

> 250 WPH rate efficiency for Photoresist stripping process

11/15

Improve Clean Room Space Efficiency
200mm Wafers
Asher+Bench
FSI Zeta 200 ViPR
350

300
Clean Space ( m )
2

250
Clean room
200
Space
150 Saving

100

50

0
10.8 21.6 32.4 43.2 54.0 64.8 75.6 86.4
Fab Capacity (1000's Wafers/ Month)

12/15

Reduce Capital Investment
Asher + Bench
FSI Zeta 200 ViPR
35,000

30,000
Deposited Capital (1000's USD)

25,000

Overall Capital
20,000
Saving
15,000

10,000

Better 5,000
Capital turnover
efficiency 0
10.8 21.6 32.4 43.2 54.0 64.8 75.6 86.4
Fab Capacity (1000's Wafers/ Month)

13/15

ZETA® System Installation Base
> 120 Systems in Production Worldwide

20 Systems Currently with ViPR™ Capability
14/15

Zeta ViPR Summary
• ZETA® system's ViPR™ technology for all wet
photoresist removal has been proven in a
manufacturing environment.
• Financial Benefits:
– Reduce resist stripping process time from
1.5–3hrs to 0.5hrs.
– Improve overall fab production cycle time per
mask layer by 3 to 5%
– Lower capital investment by 15 to 33%

15/15

FSI China IC Manufacture Annual Summit 2007 Final

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