This document provides product specifications for the PH2222A NPN switching transistor. It is a high current (max 600 mA) and low voltage (max 40 V) transistor packaged in a TO-92 plastic package. The specifications include electrical characteristics, thermal characteristics, limiting values, package outline, and definitions.
This document provides specifications for four NPN bipolar junction transistors: the 2N2219, 2N2219A, 2N2222, and 2N2222A. It includes maximum ratings, electrical characteristics at 25°C, thermal characteristics, and switching time characteristics. The electrical characteristics section provides details on parameters like current gain, saturation voltages, capacitances, and more. Graphs illustrate relationships between various parameters over a range of collector currents. The document specifies performance values and operating conditions for these general purpose transistors.
This document provides data and specifications for the 2N2222 and 2N2222A NPN switching transistors in a TO-18 metal package. It includes quick reference data on parameters like collector-base voltage, collector current, current gain, and transition frequency. Limiting values and thermal characteristics are also listed. The full document then provides typical characteristics like collector cut-off current, current gain, saturation voltages, and capacitances.
The 2N2219A and 2N2222A are high-speed NPN transistors designed for switching applications up to 500mA of collector current. They feature useful current gain over a wide range of currents, low leakage, and low saturation voltage. The datasheet provides maximum ratings, electrical characteristics like gain and switching times, and mechanical specifications for the TO-39 and TO-18 packages. Sample applications and test circuits are shown to characterize switching performance.
This document provides specifications for four NPN bipolar junction transistors: the 2N2219, 2N2219A, 2N2222, and 2N2222A. It includes maximum ratings, electrical characteristics at 25°C, thermal characteristics, and switching time characteristics. The electrical characteristics section provides details on parameters like current gain, saturation voltages, capacitances, and more. Graphs illustrate relationships between various parameters over a range of collector currents. The document specifies performance values and operating conditions for these general purpose transistors.
This document provides data and specifications for the 2N2222 and 2N2222A NPN switching transistors in a TO-18 metal package. It includes quick reference data on parameters like collector-base voltage, collector current, current gain, and transition frequency. Limiting values and thermal characteristics are also listed. The full document then provides typical characteristics like collector cut-off current, current gain, saturation voltages, and capacitances.
The 2N2219A and 2N2222A are high-speed NPN transistors designed for switching applications up to 500mA of collector current. They feature useful current gain over a wide range of currents, low leakage, and low saturation voltage. The datasheet provides maximum ratings, electrical characteristics like gain and switching times, and mechanical specifications for the TO-39 and TO-18 packages. Sample applications and test circuits are shown to characterize switching performance.
Bo32j13210d 10gbase-lr x2 transceiver 1310nm 10 kilometer singlemode sc-duple...CBO GmbH
The document describes a BlueOptics BO32J13210D X2 10G 1310nm optical transceiver module that operates at 10Gbps over 10km of single mode fiber. It provides digital diagnostics monitoring of supply voltage, laser bias current, output power, input power and temperature. The module complies with RoHS and X2 MSA standards and has a hot-pluggable X2 footprint with a 5-year warranty.
Bo32j15280d 10gbase-zr x2 transceiver 1550nm 80 kilometer singlemode sc-duple...CBO GmbH
The document describes a BlueOptics BO32J15280D X2 10G 1550nm single mode optical transceiver that supports data rates up to 10Gbps over 80km of single mode fiber. It provides key specifications such as an EML laser transmitter, PIN photo detector, XAUI electrical interface, hot-pluggable X2 footprint, and digital diagnostic monitoring of internal parameters. The transceiver complies with various telecom standards and has a 5-year warranty.
Bo32j15240d 10gbaseer x2 transceiver 1550nm 40 kilometer singlemode sc-duplex...CBO GmbH
The document describes an X2 10G 1550nm single mode optical transceiver that supports data rates up to 10Gbps over 40km of single mode fiber. It provides key optical and electrical specifications, as well as mechanical dimensions and regulatory compliance information. Digital diagnostics are supported to monitor parameters like power, temperature and bias current.
Original PNP Transistor BCX53-16 80V 1A AL SMD Code SOT-89 Newauthelectroniccom
This document provides specifications for Infineon's BCX51-BCX53 PNP silicon AF transistors. Key details include:
- They are intended for AF driver and output stages with high collector current and low saturation voltage.
- Complementary NPN types are also available.
- Maximum ratings, electrical characteristics, and package/pinout information are provided.
- Graphs illustrate characteristics like current gain, saturation voltage, and transition frequency as functions of conditions.
- The transistors are RoHS compliant and come in SOT89 packages of 1,000 or 4,000 pieces per reel.
The document describes a BlueOptics BO32J852S3D X2 10G 850nm 300M optical transceiver module that operates at 10Gbps over 300 meters of multi-mode fiber. It provides key specifications such as an 850nm VCSEL laser transmitter, PIN photodetector receiver, hot-pluggable X2 footprint, and digital diagnostic monitoring. The transceiver is compliant with various 10G Ethernet, Fibre Channel and SONET/SDH standards and is RoHS compliant.
This document provides specifications for the BA5417, a dual power amplifier IC compatible with 6-15V power supplies. It is designed for use in radio cassette and mini component players. Key features include high output power of up to 5W per channel, low distortion of 0.1% or less, and standby switching functions. The document provides detailed electrical characteristics, application circuit examples, and test data graphs.
BlueOptics Bo33j852s3d 10gbase-sr xenpak transceiver 850nm 300 meter multimod...CBO GmbH
This document provides specifications for a BlueOptics BO33J852S3D XENPAK 10G 850nm 300M optical transceiver module. It supports 10Gbps data rates over 300 meters of multi-mode fiber. The module complies with XENPAK MSA standards and provides digital diagnostics for real-time monitoring of operating parameters. It consists of a VCSEL transmitter, photodiode receiver, and other components in a hot-pluggable XENPAK form factor.
The MIC2545A/2549A are high-side power switches optimized for low loss DC power switching and power management applications. They feature a precision, resistor-programmable current limit and soft-start circuit to minimize inrush current. Thermal shutdown and adjustable current limit protect the switch and attached devices. An open-drain flag output indicates current limiting or thermal shutdown. The MIC2549A additionally has an internal latch to turn the output off during thermal shutdown, providing robust fault control. They are available in various package types with active-high or active-low enable options.
This document provides specifications for the SC100 single loop controller from M-System. The SC100 features a color LCD touch panel, universal inputs and outputs, PID control functions, alarm functions, and communication capabilities. It has two PID function blocks and supports advanced computation, sequence control, and auto-tuning functions. The controller can be programmed and configured via the touch panel or with external software. Specifications include details on inputs and outputs, display, control functions, installation requirements, and performance metrics.
This document provides product specifications for the BLF1820-90 UHF power LDMOS transistor for use in RF power amplifiers in base station applications from 1800 to 2000 MHz. Key features include output power of 90W, power gain of 12dB, and efficiency of 32% at 26V supply voltage and 500mA drain current. Application information includes typical performance curves and a description of a common source test circuit used to measure parameters like power, efficiency, and intermodulation distortion. Pin assignments, package outline, and status of the data sheet are also provided.
The document describes an X2 CWDM 10G optical transceiver operating at 1470-1610nm wavelengths for 40km single mode fiber links. It provides key specifications such as an EML laser transmitter, PIN photodetector, XAUI electrical interface, digital diagnostic monitoring and hot-pluggable small form factor.
The document summarizes the specifications and functionality of the MC74HC595A, an 8-bit serial-input/serial or parallel-output shift register with latched 3-state outputs. Some key details include:
- It consists of an 8-bit shift register and an 8-bit latch, accepting serial data input and providing either serial or parallel outputs.
- It has independent clock inputs for the shift register and latch. There is also an asynchronous reset for the shift register.
- It can directly interface with SPI serial ports on microprocessors and microcontrollers.
- Package options include PDIP-16, SOIC-16, and TSSOP-16, with operating voltage from
The document describes the DS-37-16 absolute position rotary electric encoder. It has a low profile of 8mm, uses a hollow floating shaft, requires no bearings, and offers high precision even in demanding environments. It provides analog sine/cosine outputs or digital SSi and AqB+Index outputs via external modules. Resolutions can reach up to 131,072 counts per revolution. Demo units are available to demonstrate and test the encoder.
This document provides specifications for the BlueOptics BO76JXX280D X2 CWDM 10G 1470-1610nm single mode optical transceiver. It is a high performance transceiver that supports data rates up to 10Gbps over 80km of single mode fiber. The transceiver uses an EML laser transmitter and APD photodiode with digital diagnostics monitoring various optical and electrical parameters. It complies with relevant interoperability standards and safety regulations.
This document provides product specification details for the 2N2222 and 2N2222A NPN switching transistors. It includes key features such as high current capacity of up to 800mA and low voltage of up to 40V. Application examples are listed as linear amplification and switching. The document then provides detailed technical specifications, characteristics, and parameter limits for the transistors in a standardized format.
This document provides product specification details for the 2N2222 and 2N2222A NPN switching transistors. It includes key features such as high current up to 800 mA and low voltage up to 40 V. Application examples are given as linear amplification and switching. Technical details are provided on pinning, electrical characteristics, thermal characteristics, and packaging. Limiting values and test conditions are defined.
Bo32j13210d 10gbase-lr x2 transceiver 1310nm 10 kilometer singlemode sc-duple...CBO GmbH
The document describes a BlueOptics BO32J13210D X2 10G 1310nm optical transceiver module that operates at 10Gbps over 10km of single mode fiber. It provides digital diagnostics monitoring of supply voltage, laser bias current, output power, input power and temperature. The module complies with RoHS and X2 MSA standards and has a hot-pluggable X2 footprint with a 5-year warranty.
Bo32j15280d 10gbase-zr x2 transceiver 1550nm 80 kilometer singlemode sc-duple...CBO GmbH
The document describes a BlueOptics BO32J15280D X2 10G 1550nm single mode optical transceiver that supports data rates up to 10Gbps over 80km of single mode fiber. It provides key specifications such as an EML laser transmitter, PIN photo detector, XAUI electrical interface, hot-pluggable X2 footprint, and digital diagnostic monitoring of internal parameters. The transceiver complies with various telecom standards and has a 5-year warranty.
Bo32j15240d 10gbaseer x2 transceiver 1550nm 40 kilometer singlemode sc-duplex...CBO GmbH
The document describes an X2 10G 1550nm single mode optical transceiver that supports data rates up to 10Gbps over 40km of single mode fiber. It provides key optical and electrical specifications, as well as mechanical dimensions and regulatory compliance information. Digital diagnostics are supported to monitor parameters like power, temperature and bias current.
Original PNP Transistor BCX53-16 80V 1A AL SMD Code SOT-89 Newauthelectroniccom
This document provides specifications for Infineon's BCX51-BCX53 PNP silicon AF transistors. Key details include:
- They are intended for AF driver and output stages with high collector current and low saturation voltage.
- Complementary NPN types are also available.
- Maximum ratings, electrical characteristics, and package/pinout information are provided.
- Graphs illustrate characteristics like current gain, saturation voltage, and transition frequency as functions of conditions.
- The transistors are RoHS compliant and come in SOT89 packages of 1,000 or 4,000 pieces per reel.
The document describes a BlueOptics BO32J852S3D X2 10G 850nm 300M optical transceiver module that operates at 10Gbps over 300 meters of multi-mode fiber. It provides key specifications such as an 850nm VCSEL laser transmitter, PIN photodetector receiver, hot-pluggable X2 footprint, and digital diagnostic monitoring. The transceiver is compliant with various 10G Ethernet, Fibre Channel and SONET/SDH standards and is RoHS compliant.
This document provides specifications for the BA5417, a dual power amplifier IC compatible with 6-15V power supplies. It is designed for use in radio cassette and mini component players. Key features include high output power of up to 5W per channel, low distortion of 0.1% or less, and standby switching functions. The document provides detailed electrical characteristics, application circuit examples, and test data graphs.
BlueOptics Bo33j852s3d 10gbase-sr xenpak transceiver 850nm 300 meter multimod...CBO GmbH
This document provides specifications for a BlueOptics BO33J852S3D XENPAK 10G 850nm 300M optical transceiver module. It supports 10Gbps data rates over 300 meters of multi-mode fiber. The module complies with XENPAK MSA standards and provides digital diagnostics for real-time monitoring of operating parameters. It consists of a VCSEL transmitter, photodiode receiver, and other components in a hot-pluggable XENPAK form factor.
The MIC2545A/2549A are high-side power switches optimized for low loss DC power switching and power management applications. They feature a precision, resistor-programmable current limit and soft-start circuit to minimize inrush current. Thermal shutdown and adjustable current limit protect the switch and attached devices. An open-drain flag output indicates current limiting or thermal shutdown. The MIC2549A additionally has an internal latch to turn the output off during thermal shutdown, providing robust fault control. They are available in various package types with active-high or active-low enable options.
This document provides specifications for the SC100 single loop controller from M-System. The SC100 features a color LCD touch panel, universal inputs and outputs, PID control functions, alarm functions, and communication capabilities. It has two PID function blocks and supports advanced computation, sequence control, and auto-tuning functions. The controller can be programmed and configured via the touch panel or with external software. Specifications include details on inputs and outputs, display, control functions, installation requirements, and performance metrics.
This document provides product specifications for the BLF1820-90 UHF power LDMOS transistor for use in RF power amplifiers in base station applications from 1800 to 2000 MHz. Key features include output power of 90W, power gain of 12dB, and efficiency of 32% at 26V supply voltage and 500mA drain current. Application information includes typical performance curves and a description of a common source test circuit used to measure parameters like power, efficiency, and intermodulation distortion. Pin assignments, package outline, and status of the data sheet are also provided.
The document describes an X2 CWDM 10G optical transceiver operating at 1470-1610nm wavelengths for 40km single mode fiber links. It provides key specifications such as an EML laser transmitter, PIN photodetector, XAUI electrical interface, digital diagnostic monitoring and hot-pluggable small form factor.
The document summarizes the specifications and functionality of the MC74HC595A, an 8-bit serial-input/serial or parallel-output shift register with latched 3-state outputs. Some key details include:
- It consists of an 8-bit shift register and an 8-bit latch, accepting serial data input and providing either serial or parallel outputs.
- It has independent clock inputs for the shift register and latch. There is also an asynchronous reset for the shift register.
- It can directly interface with SPI serial ports on microprocessors and microcontrollers.
- Package options include PDIP-16, SOIC-16, and TSSOP-16, with operating voltage from
The document describes the DS-37-16 absolute position rotary electric encoder. It has a low profile of 8mm, uses a hollow floating shaft, requires no bearings, and offers high precision even in demanding environments. It provides analog sine/cosine outputs or digital SSi and AqB+Index outputs via external modules. Resolutions can reach up to 131,072 counts per revolution. Demo units are available to demonstrate and test the encoder.
This document provides specifications for the BlueOptics BO76JXX280D X2 CWDM 10G 1470-1610nm single mode optical transceiver. It is a high performance transceiver that supports data rates up to 10Gbps over 80km of single mode fiber. The transceiver uses an EML laser transmitter and APD photodiode with digital diagnostics monitoring various optical and electrical parameters. It complies with relevant interoperability standards and safety regulations.
This document provides product specification details for the 2N2222 and 2N2222A NPN switching transistors. It includes key features such as high current capacity of up to 800mA and low voltage of up to 40V. Application examples are listed as linear amplification and switching. The document then provides detailed technical specifications, characteristics, and parameter limits for the transistors in a standardized format.
This document provides product specification details for the 2N2222 and 2N2222A NPN switching transistors. It includes key features such as high current up to 800 mA and low voltage up to 40 V. Application examples are given as linear amplification and switching. Technical details are provided on pinning, electrical characteristics, thermal characteristics, and packaging. Limiting values and test conditions are defined.
This document provides specifications for BC549 and BC550 NPN general purpose transistors. It includes:
- Key features of low current (max 100 mA) and low voltage (max 45 V) operation.
- Applications in low noise audio equipment stages.
- Limiting values for electrical ratings and thermal/operating characteristics.
- Electrical characteristics including current/voltage gains and capacitances.
- Package outline dimensions for the TO-92 plastic package.
This document provides product specifications for the BAV70S high-speed double diode array from Philips Semiconductors. The BAV70S consists of two dual high-speed switching diodes in a small plastic SMD package. Key specifications include a maximum switching speed of 4 ns, continuous reverse voltage of 75V, and repetitive peak forward current of 450mA. Graphical data and application information is also provided to illustrate the electrical characteristics and performance of the device.
The 74HC245 and 74HCT245 are octal bidirectional bus interface chips that feature non-inverting 3-state outputs and an output enable pin for easy cascading. They can be used to interface 8-bit address/data buses between systems or devices. The chips operate from 2V to 6V and support transmission in both directions on the bus lines when the direction control pin is set accordingly. Different package options are available with varying pin counts and temperature ranges supported.
The document provides product specifications for Philips Semiconductors' BC546 and BC547 NPN general purpose transistors. The transistors are low current (max 100 mA) and low voltage (max 65 V) devices intended for general purpose switching and amplification applications. Key specifications include DC current gain, collector-emitter saturation voltage, transition frequency, and thermal characteristics. The transistors come in TO-92 plastic packages and have PNP complements available.
Original Opto PC957L PC957 P957 957 DIP-8 New Sharpauthelectroniccom
This document provides specifications for the PC957L0NSZ0F series of photocouplers. Key details include:
1. It is an 8-pin DIP or SMT package photocoupler with input-output isolation of 5.0kVrms, high-speed response up to 1Mbps, and high common mode rejection ratio of 15kV/μs.
2. It has approvals from UL and VDE and is lead-free and RoHS compliant. Applications include use in programmable controllers and inverters.
3. Electrical characteristics include a forward voltage of 1-1.6V, rise/fall times of 0.2/0.
The document provides information on Vishay's 4N25, 4N26, 4N27, and 4N28 optocouplers, which consist of a gallium arsenide infrared LED and silicon NPN phototransistor in a dual-in-line package. Key features include isolation voltage up to 5000Vrms, interfacing with common logic families, and industry standard packaging. The optocouplers are suitable for applications such as AC mains detection, relay driving, power supply feedback, and logic ground isolation due to their electrical characteristics, agency approvals, and wide operating temperature range from -55°C to 100°C.
The 2N3904 is a small signal NPN transistor in a TO-92 package suitable for through-hole PCB assembly. It is well-suited for TV and home appliance equipment as a small load switch transistor with high gain and low saturation voltage. Key specifications include a current gain of 60-300, transition frequency of 250-270 MHz, and saturation voltage of 0.2V or less at currents up to 50mA.
Original PNP Transistor TIP102 TO-220 New STMicroelectronicsAUTHELECTRONIC
The document provides information on TIP102, TIP105, and TIP107 Darlington transistors. It includes maximum ratings, electrical characteristics, thermal data, and mechanical dimensions for the transistors. The TIP102 is an NPN power transistor, while the TIP105 and TIP107 are complementary PNP types. All three devices are intended for use in linear and switching power applications.
This 3 sentence summary provides the key details about the optocoupler document:
The document describes the 4N32 and 4N33 optocouplers, which contain a gallium arsenide infrared LED and silicon photodarlington sensor. These optocouplers provide very high current transfer ratio of at least 500% and high isolation resistance of 1011 ohms for switching applications while maintaining isolation between driving and load circuits. They can replace reed and mercury relays and offer long life, high speed switching without magnetic fields.
The document describes the TDA8947J, a 4-channel audio amplifier IC. It can operate as 4 single-ended channels, 2 bridge-tied load channels, or a combination. Key features include soft clipping protection, mute and standby modes, and thermal protection from short circuits or high temperatures. Applications include TVs, speakers, audio receivers. It provides up to 25W single-ended or 50W bridge-tied load power and has input/output pins compatible with similar Philips ICs.
This document appears to be a price list for electrical infrastructure and information technology products from a company. It contains over 100 products listed with reference codes, descriptions and unit prices in Euros. The products include surge protectors, circuit breakers, building automation system components like sensors, actuators and controllers, and other electrical equipment like junction boxes and mounting hardware.
This document provides specifications for the Philips Semiconductors BR100/03 LLD silicon bidirectional trigger device. The device is intended for use in triac and thyristor trigger circuits, operates with a breakover voltage between 28-36V, and can withstand repetitive peak forward currents up to 2A. The document includes details on electrical characteristics, thermal properties, mechanical dimensions and application information.
WS2813 is an intelligent control LED light source that the control circuit and RGB chip are integrated in a package of 5050 components. Its internal include intelligent digital port data latch and signal reshaping amplification drive circuit. Also include a precision internal oscillator and a DC5V voltage programmable constant current control part, which achieves highly consistent color effect.
This document provides information about Lisun Electronics Inc., a leader in lighting and electrical test instruments. It describes Lisun's EMI-9KA and EMI-9KB EMI Test Systems, which are used to test electromagnetic interference from 9 kHz to 300 MHz. The systems include receivers, artificial power networks, coupling/decoupling networks, transformers, attenuators, and cables. Requirements for the test environment and installation procedures are also outlined.
This document provides information about Lisun Electronics Inc., a leader in lighting and electrical test instruments. It describes Lisun's EMI-9KA and EMI-9KB EMI Test Systems, which are used to test electromagnetic interference from 9 kHz to 300 MHz. The systems include receivers, artificial power networks, coupling/decoupling networks, transformers, attenuators, and cables. Requirements for the test environment and installation procedures are also outlined.
LPCE-3 is a CCD Spectroradiometer Integrating Sphere Compact System for LED Testing. It is suitable for photometric and colorimetric measurement of luminaries such as LEDs, LED luminaires, Energy-saving lamps, Fluorescent lamps, HID lamps (high voltage sodium lamps and high voltage mercury lamps) and CCFL. The measured data meets the requirements of CIE, EN and LM-79 clause 9.1 for the measurement of photometry and colorimetry.
Original NPN Darlington Transistor MC1413DR2G 1413DR2G NCV1413BDG 1413BDG 141...AUTHELECTRONIC
The document describes a high voltage, high current Darlington transistor array that is well-suited for driving lamps, relays, or printer hammers. It has 7 NPN Darlington connected transistors with a high breakdown voltage and internal suppression diodes to ensure safety with inductive loads. It can drive incandescent lamps with peak inrush currents up to 500mA per transistor.
2. 1999 Apr 27 2
Philips Semiconductors Product specification
NPN switching transistor PH2222A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
NPN switching transistor in a TO-92; SOT54 plastic
package. PNP complement: PH2907A.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 collector
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage1
3
2
MAM182
3
2
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 75 V
VCEO collector-emitter voltage open base − 40 V
VEBO emitter-base voltage open collector − 6 V
IC collector current (DC) − 600 mA
ICM peak collector current − 800 mA
IBM peak base current − 200 mA
Ptot total power dissipation Tamb ≤ 25 °C − 500 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C
3. 1999 Apr 27 3
Philips Semiconductors Product specification
NPN switching transistor PH2222A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 250 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 60 V − 10 nA
IE = 0; VCB = 60 V; Tamb = 150 °C − 10 µA
IEBO emitter cut-off current IC = 0; VEB = 3 V − 10 nA
hFE DC current gain IC = 0.1 mA; VCE = 10 V 35 −
IC = 1 mA; VCE = 10 V 50 −
IC = 10 mA; VCE = 10 V 75 −
IC = 10 mA; VCE = 10 V; Tamb = −55 °C 35 −
IC = 150 mA; VCE = 1 V; note 1 50 −
IC = 150 mA; VCE = 10 V; note 1 100 300
IC = 500 mA; VCE = 10 V; note 1 40 −
VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 − 300 mV
IC = 500 mA; IB = 50 mA; note 1 − 1 V
VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 0.6 1.2 V
IC = 500 mA; IB = 50 mA; note 1 − 2 V
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 8 pF
Ce emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz − 25 pF
fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 300 − MHz
F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
− 4 db
Switching times (between 10% and 90% levels); see Fig.2
ton turn-on time ICon = 150 mA; IBon = 15 mA;
IBoff = −15 mA
− 35 ns
td delay time − 15 ns
tr rise time − 20 ns
toff turn-off time − 250 ns
ts storage time − 200 ns
tf fall time − 60 ns
4. 1999 Apr 27 4
Philips Semiconductors Product specification
NPN switching transistor PH2222A
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB
(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
VBB
Vi
VCC
Fig.2 Test circuit for switching times.
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope: input impedance Zi = 50 Ω.
5. 1999 Apr 27 5
Philips Semiconductors Product specification
NPN switching transistor PH2222A
PACKAGE OUTLINE
UNIT A
REFERENCESOUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43 97-02-28
A L
0 2.5 5 mm
scale
b
c
D
b1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e1
e
1
2
3
6. 1999 Apr 27 6
Philips Semiconductors Product specification
NPN switching transistor PH2222A
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.