Er-doped hybrid waveguide amplifiers with multiple spatially engineered active layers for on-chip optical gain enhancement
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Er-doped hybrid waveguide amplifiers with multiple spatially engineered active layers can enhance optical gain on a chip. Modeling shows that using three thin Er-doped layers instead of a single thick layer in a 1 cm long waveguide can increase the net gain by up to 30%. Spatially engineering the active layers takes advantage of rare-earth ion interactions to optimize doping and minimize quenching effects, improving efficiency.
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Er-doped hybrid waveguide amplifiers with multiple spatially engineered active layers for on-chip optical gain enhancement
- 1. Er-doped hybrid waveguide amplifiers with multiple spatially engineered active layers for on-chip optical gain enhancement D.Sc. John Rönn SPIE Photonics Europe 2022 Paper 12148-3 john.ronn@beneq.com
- 3. 6/22/2022 BENEQ – HOME OF ALD World’s leading ALD-dedicated company 40+ years of ALD expertise 40+ dedicated ALD systems in operation 24/7 200+ personnel Divided into two business lines Advanced ALD • Optics & Photonics • Battery Technology • Part Coating Semiconductor ALD • Micro- & optoelectronics • Power & RF Devices • MEMS
- 4. 6/22/2022 BENEQ – HOME OF ALD Research Equipment Beneq R2 Beneq TFS200 Beneq TFS500 Wafer Fabrication Beneq Transform™ 3D & Batch Beneq P400A Beneq P800 Beneq P1500 Spatial ALD Beneq C2R Genesis ALD
- 5. 6/22/2022 BENEQ – HOME OF ALD Why ALD?
- 6. 6/22/2022 BENEQ – HOME OF ALD Application areas: Microstructures Integrated waveguides Cylindrical lenses, Fibers Structured wafers
- 7. 6/22/2022 BENEQ – HOME OF ALD Application areas: Macrostructures Highly-curved lenses 3D-Structures Freeform optics
- 9. 6/22/2022 ALD FOR SILICON PHOTONICS On-chip active functionalities have been extensively studied over the past decades
- 10. 6/22/2022 ALD FOR SILICON PHOTONICS On-chip active functionalities have been extensively studied over the past decades Semiconductors undisputed in many applications • Integration with Si difficult • Temperature sensitive • Short lifetime
- 11. 6/22/2022 ALD FOR SILICON PHOTONICS On-chip active functionalities have been extensively studied over the past decades Semiconductors undisputed in many applications • Integration with Si difficult • Temperature sensitive • Short lifetime Rare-earth-ion-doped materials an alternative solution Monolithic integration with Si Cheap and easy to fabricate Long excited state lifetime → High output power Temperature insensitive → Narrow laser linewidths Low noise
- 12. 6/22/2022 ALD FOR SILICON PHOTONICS In rare-earth materials, transitions are parity-forbidden • Weak oscillator strengths for transitions • High doping required to provide reasonable gain High doping causes quenching and up-conversion • ∝ 𝑅−6 , 𝑅 = Distance between ions • Can be optimized by tailoring the doping profile
- 13. 6/22/2022 ALD FOR SILICON PHOTONICS Er-doped Al2O3 with ALD Beneq TFS500 Al C H Er O
- 14. 6/22/2022 ALD FOR SILICON PHOTONICS Er-doped Al2O3 with ALD Beneq TFS500 Al C H Er O
- 15. 6/22/2022 ALD FOR SILICON PHOTONICS Er-doped Al2O3 with ALD Beneq TFS500
- 16. 6/22/2022 ALD FOR SILICON PHOTONICS Er:Al2O3-Si3N4 hybrid slot waveguides
- 17. 6/22/2022 ALD FOR SILICON PHOTONICS Er:Al2O3-Si3N4 hybrid slot waveguides • Up to 20 dB/cm modal gain
- 18. 6/22/2022 ALD FOR SILICON PHOTONICS Er:Al2O3-Si3N4 hybrid strip waveguides
- 19. Er-doped hybrid waveguide amplifiers with multiple spatially engineered active layers
- 20. 6/22/2022 Er-doped hybrid waveguides with multiple spatially engineered active layers 𝐿 = 1 cm 𝛼0 = 1 dB/cm 𝑡 = 10 − 500 nm 𝜆p = 1480 nm 𝜆s = 1533 nm 𝑃in = 50 mW, Sin = 1μ𝑊
- 21. 6/22/2022 Er-doped hybrid waveguides with multiple spatially engineered active layers 𝐿 = 1 cm 𝛼0 = 1 dB/cm 𝑡 = 10 − 500 nm Net Gain for a single active layer 𝜆p = 1480 nm 𝜆s = 1533 nm 𝑃in = 50 mW, Sin = 1μ𝑊
- 22. 6/22/2022 Er-doped hybrid waveguides with multiple spatially engineered active layers 𝐿 = 1 cm 𝛼0 = 1 dB/cm 𝑡 = 10 − 500 nm Net Gain for a single active layer 𝜆p = 1480 nm 𝜆s = 1533 nm 𝑃in = 50 mW, Sin = 1μ𝑊
- 23. 6/22/2022 Er-doped hybrid waveguides with multiple spatially engineered active layers 𝐿 = 1 cm 𝛼0 = 1 dB/cm 𝑡 = 10 − 500 nm Net Gain for a single active layer 𝜆p = 1480 nm 𝜆s = 1533 nm 𝑃in = 50 mW, Sin = 1μ𝑊
- 24. 6/22/2022 Er-doped hybrid waveguides with multiple spatially engineered active layers
- 25. 6/22/2022 Er-doped hybrid waveguides with multiple spatially engineered active layers Net Gain for three active layer 𝐿 = 1 cm 𝛼0 = 1 dB/cm 𝑡 = 10 − 500 nm 𝜆p = 1480 nm 𝜆s = 1533 nm 𝑃in = 50 mW, Sin = 1μ𝑊
- 26. 6/22/2022 Er-doped hybrid waveguides with multiple spatially engineered active layers Net Gain for three active layer 𝐿 = 1 cm 𝛼0 = 1 dB/cm 𝑡 = 10 − 500 nm 𝜆p = 1480 nm 𝜆s = 1533 nm 𝑃in = 50 mW, Sin = 1μ𝑊
- 27. 6/22/2022 Er-doped hybrid waveguides with multiple spatially engineered active layers Net Gain for three active layer 𝐿 = 1 cm 𝛼0 = 1 dB/cm 𝑡 = 10 − 500 nm 𝜆p = 1480 nm 𝜆s = 1533 nm 𝑃in = 50 mW, Sin = 1μ𝑊
- 28. 6/22/2022 Er-doped hybrid waveguides with multiple spatially engineered active layers Net Gain for three active layer Up to 30% gain enhancement! 𝐿 = 1 cm 𝛼0 = 1 dB/cm 𝑡 = 10 − 500 nm 𝜆p = 1480 nm 𝜆s = 1533 nm 𝑃in = 50 mW, Sin = 1μ𝑊
- 29. 6/22/2022 Summary ALD performs extremely well in devices that require conformal coating Material properties can be tailored by engineering the ALD- precursors ALD shows excellent potential in Silicon Photonics where active devices are in high demand Further optimization of the active layer properties enables higher efficiencies and opens up a completely new way of designing active devices
- 30. 6/22/2022 BENEQ AT PHOTONICS EUROPE 2022
- 31. Beneq® is a leading supplier of production and research equipment for atomic layer deposition (ALD) and a provider of thin film coating services. www.beneq.com | info@beneq.com | +358 9 7599 530 firstname.lastname@beneq.com
- 32. SCALING-UP
- 33. 6/22/2022 SCALING-UP Myth: ALD is a very slow deposition technique
- 34. 6/22/2022 SCALING-UP Myth: ALD is a very slow deposition technique Batch ALD: Beneq P400A Beneq P800 Beneq P1500 Batch size: up to 8 m2 Batch size: up to 40 m2 Batch size: a medium-sized car
- 35. 6/22/2022 SCALING-UP Myth: ALD is a very slow deposition technique Spatial ALD: Beneq C2R Process Temperature Deposition rate Al2O3 120 °C > 1500 nm/h TiO2 120 °C > 1100 nm/h SiO2 120 °C > 650 nm/h Ta2O5 150 °C > 800 nm/h
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