Se-2000 for modular design provides modularity and high measurement performance in a compact table footprint. This cost effective tool includes automatic sample positioning suitable for R&D laboratories and production quality monitoring.

1. SE-2000 product presentation
•Spectroscopic ellipsometry introduction
•SE-2000: new product introduction, perfomance, features
•Application examples
Prepared by Semilab 1/20/2014

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Spectroscopic ellipsometry introduction
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Multiple application areas
• Spectroscopic Ellipsometry is a very versatile thin film measurement method, its
applications cover:
o thin dielectric films: oxide, nitride, silicon (semiconductor/solar/flat panel)
o thin metal layers
o organic layers / OLED (flat panel), polymers
o LED/lighting
o R&D materials: graphene, 3D nanostructures
Spectroscopic Ellipsometry (SE)
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Spectroscopic ellipsometry demand by industry for 2010

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It is based on polarization change of spectral light
 Characterization quantities:
 Layer thickness
 Optical functions (eg. refractive index, absorption, ...)
1. Thin layers on any substrates (Si, glass, PET foil, ...)
2. Very thin layer characterization (from mono layer) is possible
3. Complex multilayer characterization for each layer individually
4. Thick layers with Infrared SE (up to ~100 µm)
 A few principles:
 It is an absolute measurement: do not need any reference
 It is a non-direct technique: does not give directly the physical parameters
of the sample (thickness and index)
 It is necessary to always use a model to describe the sample
Spectroscopic Ellipsometry (SE)
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Spectroscopic Ellipsometry (SE)
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• Ellipsometry is based on the measurement of the
change of the polarization state of light after
reflection from a sample
• Using Spectroscopic Ellipsometry (SE), up to 7
layers can be analyzed simultaneously in one
measurement in order to:
– Extract the thickness of every individual layer
– Obtain material optical properties over a wide
spectral range from Deep UV to Near IR
• SE has the advantage of high sensitivity due to the
additional measurement of the phase of light at
different wavelengths. As a consequence, SE
allows analysis of complex structures like multi-
layers with rough interfaces and unknown material
composition
• SE is an indirect measurement method: the
thickness and composition of the structure is
determined on an optical model basis, through a
regression procedure
),,().( iii
j
s
p
TknfeTan
r
r
 

Amplitude ratio
Phase shift Directly Measured Parameters:
Tan(Ψ) and Cos(Δ) (ellipsometric angles) or
α and β (Fourier coefficients)
Where:
• rp Complex reflection coefficient for P polarization
• rs Complex reflection coefficient for S polarization
• Tan, Amplitude ratio and phase difference of the P
and S components of the reflected light,
respectively
SE is a non-destructive, optical (thus, non-contact) technique that is able
to measure optical properties and thickness of single and multi layers
Substrate (ns, ks)
Thin Film ... i (ni, ki, Ti)
Ei
EP
Er
Spectral detection
Thin Film 2 (n2, k2, T2)
Thin Film 1 (n1, k1, T1)
Incoming spectral light
Ambient (n0, k0)
θo
ES
rp
rs

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Experimental Measurement
=
Model Simulation
?
No, proposition for new
parameters
Yes
Physical Model
with an estimated sample structure
Calculated values
Film structure and optical properties proposed are correct
Advanced minimization algorithms
for quick convergence
- Film stack and structure
- Material n, k values,
- Composition Fraction of Mixture
- Index dispersion
Cos(Δ)
Tan(Ψ)
Schematic of the regression procedure theory
Cos(Δ)
Tan(Ψ)
Spectroscopic Ellipsometry (SE)

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SE-2000: new product introduction
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SE-2000
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Reliability
Low cost of
ownership
Performance
User
interface
Speed
Key targets
of SE-2000
development
• Complete redesign of SW
• New „smart” electronics
• New mapping stage
• Combined acquisition
• New mapping stage
• Combined acquisition
• Compact electronics
• Less 3rd party components
• New operating SW
• Tool controlled by single notebook
Easy install
• Quicker system align
• Cheaper install trips

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SE-2000
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Product commercially available !
Ease of use through improved HW and SW
Extended performances (RCE)
New compact and stable design
(compared to the predecessor GES5E)
GEN6
GES5E
Improved reliability: reduced maintenance cost

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Example #1: Lamp (Xe light source module)
SE-2000 mechanics and optics
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Fitting mechanical design to ellipso arms
With ozone filter integrated

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Example #2: Sample stage
SE-2000 mechanics and optics
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Fast, moves with 10 cm/sec speed motion
Covers on axis, clean environment

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Example #3: Goniometer wheel
SE-2000 mechanics and optics
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Covered, for clean environment, no dust

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Example #4: Inside ellipso arms
SE-2000 mechanics and optics
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Stable working with stepper motor (no magnet)
Up to 10 possible light attenuator setting
Aperture
Industrial design for stable alignment
Rotating attenuator wheel

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Focusing optics, spot size
• Standard microspot optics (MS)
• Ultra microspot optics (UMS)
60 µm between 250 – 990 nm
• NIR extension to UMS (unique)
80 µm between 1000 – 1600 nm
SE-2000 mechanics and optics
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Special high brightness source
Spot size on sample: ~400 µm
Good for R&D samples and usual
glass substrates (>0.4 mm) for
eliminating backside reflection

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Unique function: maintaining all spectral
detection methods in one tool!
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Fast spectrograph
Wavelength range:
193 - 1 700 nm
High resolution
spectrometer
Wavelength range:
193 - 2 400 nm
FTIR extension
Wavelength range:
1 500 - 25 000 nm

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Facilities planner
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Facilities planner
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Facilities planner
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SE-2000 performance: accuracy and precision
imrovements
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Performance: accuracy
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Specification in straight line (measured at 90 deg. angle without sample):
Psi = 45 ± 0.05°
Delta = 0 ± 0.05°
45
45.01
45.02
45.03
45.04
45.05
200 400 600 800 1000
Psi(deg.)
Wavelength (nm)
-0.05
-0.04
-0.03
-0.02
-0.01
0
0.01
0.02
0.03
0.04
0.05
200 400 600 800 1000Delta(deg.)
Wavelength (nm)

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Performance: precision
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Specification in straight line (measured at 90 deg. angle without sample):
1σ StDev for Psi ≤ 0.02°
1σ StDev for Delta ≤ 0.02°
0
0.005
0.01
0.015
0.02
200 400 600 800 1000
1σStDevforDelta(deg.)
Wavelength (nm)
0
0.005
0.01
0.015
0.02
200 400 600 800 1000
1σStDevforPsi(deg.)
Wavelength (nm)

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Performance: precision
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Example #1: ~2 nm SiO2 layer on Si
No. Thickness (nm)
1 2.16518
2 2.16520
3 2.16621
4 2.16734
5 2.16681
6 2.16556
7 2.16501
8 2.16606
9 2.16629
10 2.16565
11 2.16589
12 2.16446
13 2.16542
14 2.16569
15 2.16645
16 2.16523
17 2.16473
18 2.16546
19 2.16731
20 2.16631
21 2.16562
22 2.16646
23 2.16667
24 2.16570
25 2.16547
26 2.16659
27 2.16256
28 2.16543
29 2.16522
30 2.16454
StDev 0.00095
Avg 2.16568
2.16
2.17
0 5 10 15 20 25 30
Thickness(nm)
Measurement No.
1 σ StDev = 0.00095 nm
Ellipsometry spectrum:
measured and regression
Psi and Delta

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Performance: precision
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Example #2: ~100 nm SiO2 layer on Si
No. Thickness (nm)
1 97.9273
2 97.9295
3 97.9280
4 97.9316
5 97.9377
6 97.9317
7 97.9307
8 97.9329
9 97.9291
10 97.9309
11 97.9376
12 97.9363
13 97.9357
14 97.9297
15 97.9303
16 97.9300
17 97.9282
18 97.9283
19 97.9295
20 97.9299
21 97.9266
22 97.9323
23 97.9307
24 97.9293
25 97.9326
26 97.9358
27 97.9305
28 97.9269
29 97.9294
30 97.9253
StDev 0.0032
Avg 97.9308
97.92
97.93
97.94
0 5 10 15 20 25 30
Thickness(nm)
Measurement No.
1 σ StDev = 0.0032 nm
Ellipsometry spectrum:
measured and regression
Psi and Delta

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Performance: precision
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Example #3: ~170 nm a-Si layer on glass
No. Thickness (nm)
1 172.1036
2 172.1033
3 172.0957
4 172.0801
5 172.0539
6 172.0536
7 172.1008
8 172.1281
9 172.1163
10 172.1215
11 172.1096
12 172.0622
13 172.0694
14 172.1102
15 172.1038
16 172.0587
17 172.0803
18 172.0651
19 172.0797
20 172.1034
21 172.0962
22 172.0673
23 172.0457
24 172.0042
25 172.0418
26 172.071
27 172.1013
28 172.0252
29 172.0437
30 172.0751
StDev 0.0300
Avg 172.079
172
172.05
172.1
172.15
0 5 10 15 20 25 30
Thickness(nm)
Measurement No.
1 σ StDev = 0.0300 nm
Ellipsometry spectrum:
measured and regression
Tan(Psi) and Cos(Delta)

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SE-2000 extended features
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Example #1: Transmission ellipsometry
SE-2000: new and enhanced features
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Anisotropic sample (thick transparent polymer foil) measured in transmission mode
Jones Matrix components
measured in transmission:
measured and fitted spectra
Resulted Euler angles:
φ = 88.5 °± 0.4°
θ = 21.0°± 3.8°
ψ = -86.4°± 0.5°
Refractive index and Extinction:
sample
X’
Y’
Z’

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Example #2: Mueller Matrix
SE-2000: new and enhanced features
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Full MM15 with two compensators or truncated MM11 with only one compensator
Full MM15 spectrum of a
sample Half Wave Plate
(anisotropic material)

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-4.5
-3.5
-2.5
-1.5
-0.5
0.5
55 60 65 70 75
log10(Intensity)
Scattering angle (°)
Example #3: Scatterometry
SE-2000: new and enhanced features
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2 µm period photoresist grating with analyser arm angle scan from 75 deg. to 55 deg.
Specular
reflection
angle
Scattered
intensity
peak
at 375 nm

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Semilab SE-2000 with all options
Example of optional special samples stages
available
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Eg.: Advanced Environment Cell with
optional liquid circulation and
temperature control
AdvancedEnvironmentCellmountedonSE-2000stage
AdvancedEnvironmentCell
controlandcirculationboxes

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Liquid cell: in-situ protein adsorption experiment
• Circulating liquid (DI water) in the
cell with Si sample piece being
measured in-situ by SE
• Bovine Serum Albumin (BSA)
solution inserted to the cell and
the growth speed is monitored
Example of optional special samples stages
available
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Two different growth mechanisms:
silicon
silicon
BSA molecules
BSA molecules
1.
2.

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EPA option: Ellipsometric Porosimetry Atmospheric
Example: Pluronic templated
porous SiO2 layer on
top of Si substrate
Example of optional special samples stages
available
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Tri-block copolimer Pluronic P123
Micelle structure with
effective pore size ~ 6 nm based on TEM
Relative humidity
max. Vads = 47%
(porosity)
Pore size ~ 5-7 nm
with structure

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Small heating vacuum stage from Linkam Ltd. (UK)
For smaller, 1” samples as
adaptation for ellipsometer stage
• Wide temperature range cell 1: -
196C to 350C
• Wide temperature range cell 2:
RT to 600C
• Wide temperature range cell 3:
RT to 1000C
Example of optional special samples stages
available
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Software improvements
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New SAM: automated measurement software interface improvement
Software improvements
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Either recipe-based or manual measurement mode
Program status feedback
Multi-user acounts
Graphical 3D map of
results even in-situ during
measurement sequence

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New SEA: easy-to use analysis software
Software improvements
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Functions:
Interactive graphical interface
Various fitting functions and
optical dispersion laws
Immediate visualization of all
functions
Powerful „viewer” window for
comparing of different spectrums
More than just SE: porosimetry
and Raman analysis modules
Automatic PDF report creation
Linked to SAM for automation
Evaluation of scatterometry

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Application examples
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High spatial resolution mapping (sub-mm step size)
Graphene layers: novel electrode material
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Visual correlation
between sample photo
and mapping data
no graphene
graphene single layer
graphene multilayer

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3D ITO nanomaterial: plasmonic (novel optical)
structures
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Tunable absorption peak and
plasmonic response with Ag content
Check our recent publication in Optics Letters, Vol. 38, Issue 19, pp. 3969-3972 (2013) !

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Thank you for your attention!
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