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Device Modeling Report



COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL
PART NUMBER: 1SS272
MANUFACTURER: TOSHIBA




                    Bee Technologies Inc.

      All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                 -1-
DIODE MODEL PARAMETERS

PSpice model
                                    Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




           All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                      -2-
Forward Current Characteristic

Circuit Simulation Result

             100mA




              10mA




             1.0mA




             100uA




              10uA
                     0V            0.2V   0.4V       0.6V   0.8V       1.0V   1.2V
                           I(R1)
                                                     V_V1

Evaluation Circuit

                                             R1

                                             0.01m



                                 V1
                          0Vdc                                     U1
                                                                   1SS272_P




                                                               0




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                                  -3-
Comparison Graph

Circuit Simulation Result




Simulation Result

                                          Vfwd (V)
             Ifwd (A)                                                   %Error
                            Measurement            Simulation
                0.00001            0.380                  0.381                  0.15
                0.00002            0.410                  0.412                  0.39
                0.00005            0.455                  0.453                 -0.50
                 0.0001            0.485                  0.484                 -0.22
                 0.0002            0.515                  0.515                  0.00
                 0.0005            0.560                  0.557                 -0.54
                   0.001           0.590                  0.589                 -0.17
                   0.002           0.620                  0.623                  0.46
                   0.005           0.670                  0.671                  0.14
                    0.01           0.715                  0.713                 -0.33
                    0.02           0.760                  0.762                  0.26
                    0.05           0.840                  0.838                 -0.24
                     0.1           0.900                  0.900                  0.00



                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                            -4-
Capacitance Characteristic

Circuit Simulation Result

         1.6p




         1.0p




         200f
           300mV         1.0V                              10V                  60V
               -I(X_U1.X_U1.D_D1)/(80V/1u)
                                        V(N11360)

Evaluation Circuit

                                    V2


                                         0Vdc


                 V2 = 80      V1
                 V1 = 0
                 TD = 0                                    1SS272_P
                 TR = 1us                                  U2
                 TF = 10ns
                 PW = 20us
                 PER = 10us



                                          0




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                                -5-
Comparison Graph

Circuit Simulation Result




Simulation Result

                                       Ct (pF)
              Vrev (V)                                                 %Error
                             Measurement     Simulation
                     0.200          0.889           0.890                    0.08
                     0.500          0.885           0.887                    0.22
                     1.000          0.882           0.883                    0.06
                     2.000          0.870           0.874                    0.46
                     5.000          0.850           0.854                    0.45
                    10.000          0.830           0.828                   -0.24
                    20.000          0.795           0.793                   -0.25
                    40.000          0.750           0.751                    0.13
                    60.000          0.730           0.724                   -0.82




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                            -6-
Reverse Recovery Characteristic

Circuit Simulation Result

                400mA


                300mA


                200mA


                100mA


                 -0mA


                -100mA


                -200mA


                -300mA


                -400mA
                   19.97us    19.99us       20.01us           20.03us   20.05us 20.07us
                        I(R1)
                                                       Time
Evaluation Circuit

                                                 R1

                                                 50

                          V1 = -9.2V   V1
                          V2 = 11V
                          TD = 0.8ns          U1
                          TR = 5ns            1SS272_P
                          TF = 10ns
                          PW = 20us
                          PER = 50us




                                             0




Compare Measurement vs. Simulation

                               Measurement                Simulation             %Error
          Trj        ns                6.800                      6.540              -3.82
          Trb        ns                2.200                      2.128              -3.28
          Trr        ns                9.000                      8.668              -3.69



                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                                 -7-
Reverse Recovery Characteristic                                        Reference




Trj =6.80(ns)
Trb= 2.20 (ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50




                                                          Example




                               Relation between trj and trb




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2008

                                           -8-

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SPICE MODEL of 1SS272 (Professional Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL PART NUMBER: 1SS272 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -1-
  • 2. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -2-
  • 3. Forward Current Characteristic Circuit Simulation Result 100mA 10mA 1.0mA 100uA 10uA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc U1 1SS272_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -3-
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.00001 0.380 0.381 0.15 0.00002 0.410 0.412 0.39 0.00005 0.455 0.453 -0.50 0.0001 0.485 0.484 -0.22 0.0002 0.515 0.515 0.00 0.0005 0.560 0.557 -0.54 0.001 0.590 0.589 -0.17 0.002 0.620 0.623 0.46 0.005 0.670 0.671 0.14 0.01 0.715 0.713 -0.33 0.02 0.760 0.762 0.26 0.05 0.840 0.838 -0.24 0.1 0.900 0.900 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -4-
  • 5. Capacitance Characteristic Circuit Simulation Result 1.6p 1.0p 200f 300mV 1.0V 10V 60V -I(X_U1.X_U1.D_D1)/(80V/1u) V(N11360) Evaluation Circuit V2 0Vdc V2 = 80 V1 V1 = 0 TD = 0 1SS272_P TR = 1us U2 TF = 10ns PW = 20us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -5-
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Ct (pF) Vrev (V) %Error Measurement Simulation 0.200 0.889 0.890 0.08 0.500 0.885 0.887 0.22 1.000 0.882 0.883 0.06 2.000 0.870 0.874 0.46 5.000 0.850 0.854 0.45 10.000 0.830 0.828 -0.24 20.000 0.795 0.793 -0.25 40.000 0.750 0.751 0.13 60.000 0.730 0.724 -0.82 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -6-
  • 7. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 19.97us 19.99us 20.01us 20.03us 20.05us 20.07us I(R1) Time Evaluation Circuit R1 50 V1 = -9.2V V1 V2 = 11V TD = 0.8ns U1 TR = 5ns 1SS272_P TF = 10ns PW = 20us PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation %Error Trj ns 6.800 6.540 -3.82 Trb ns 2.200 2.128 -3.28 Trr ns 9.000 8.668 -3.69 All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -7-
  • 8. Reverse Recovery Characteristic Reference Trj =6.80(ns) Trb= 2.20 (ns) Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2008 -8-