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A 22 W 65% efficiency GaN Doherty power amplifier at
3.5 GHz for WiMAX applications
Jorge Moreno Rubio1
, Jie Fang1
, R. Quaglia1
, V. Camarchia1,2
,
M. Pirola1
, S. Donati Guerrieri1
, G. Ghione1
1
Dipartimento di Elettronica, Politecnico di Torino
Corso Duca degli Abruzzi, 29, I-10129 Torino, ITALY
2
Center for Space Human Robotics,
Italian Institute of Technology, C.so Trento 21, 10129 Torino,
ITALY e-mail: vittorio.camarchia@iit.it
Abstract—The design, implementation and
characterization of a Doherty Power Amplifier
(DPA) for 3.5 GHz WiMAX applications are dis-
cussed. The DPA has been implemented using a
commercial GaN HEMT from Cree inc., following
a class AB and C scheme for the main and peak
module, respectively. The measured maximum
power of the DPA is 22 W with a first peak
efficiency of 57%, and maximum drain efficiency
of 65% at the DPA saturation. Efficiency over the
so-called Doherty region (where both the main and
the peak amplifiers operate) does not drop below
55% from saturation to 6 dB input back-off. The
gain at the onset of the Doherty region is 8 dB,
with around 1 dB roll-off.
Index Terms—GaN, power amplifier, wireless
communications, Doherty
I. INTRODUCTION
The high signal Peak to Average Power Ra-
tio (PAPR) typical of many modern wireless
communication standards [1], [2] implies that
transmitter amplifies operate on average with a
significant power back-off with respect to the
maximum output power. In fact, the high dy-
namics of the instantaneous signal power, con-
ventionally described by the PAPR parameter,
makes the PAs work on a large interval of power
ranges, rather than at a fixed level, as in the case
of constant or quasi-constant envelope modula-
tions (e.g. GSM signal). In these conditions, the
behavior of the efficiency as a function of the
power level is definitely more important than the
maximum efficiency in power saturation. Under
this respect, a significant figure of merit will
be the average efficiency, weighted according to
the statistical distribution of the instantaneous
power.
In the present paper we focus of the WiMAX
standard, whose signal exhibits a PAPR of sev-
eral dBs (up to 9 dB). To achieve high efficiency
on a large output power range, the Doherty
scheme, due to its relative simplicity, is one
of the most exploited solutions, although its
application to high frequencies (typically above
a few GHz) exploiting conventional technologies
(e.g. Si based LDMOS) poses significant chal-
lenges [3], [4]. In this framework, the GaN based
HEMT technology appears to be the most valid
candidate to replace LDMOS devices for higher
frequency, even if only few results on DPA at
frequency above the WiFi band, around 2.4 GHz,
have been so far published.
The paper presents the design strategy, imple-
mentation details, and experimental results of a
DPA fabricated with a commercial GaN process
for WiMAX applications, i.e. 28 MHz bandwidth
around 3.5 GHz. The realized DPA exhibits an
output power higher than 22 W, with efficiency
higher than 55% in a 6 dB input power back-off
(OBO) range, therefore demonstrating very good
efficiency performances when compared with
recently published works adopting similar device
technology, for the same kind of applications,
e.g. [5].
The paper is organized as follows: section II
describes the several steps of the design pro-
cedure, section III presents and discusses the
carried out measurements, while in section IV
some conclusions are finally drawn.
II. DESIGN STRATEGY
The active device employed in the DPA is the
CGH40010 from Cree inc., a GaN HEMT with
Copyright © 2011 IEEE. Reprinted from the IEEE Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC 2011) April 18th - 19th,
2011 in Vienna, Austria
This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of
Cree’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertis-
ing or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to
pubs-permissions@ieee.org By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
typical output power of 10 W in C band, at the
suggested drain bias of 28 V [6]. As a prelimi-
nary step, a cold-FET characterization campaign
has been carried out to identify the extrinsic ele-
ments, needed to deembed the parasitic elements,
and accurately transfer the external loads to the
intrinsic drain current generator reference plane.
The DPA configuration is the well-known AB-
C scheme (see Fig. 1), with a class AB and a
class C amplifiers used as main and peak stage,
respectively. To further increase the efficiency,
the main amplifier has been designed exploiting
a second harmonic tuning approach [3], rather
than following a more conventional AB tuned
load strategy.
PEAK
“C”
MAIN
“AB”
UNEVEN
DIVIDER
IMPEDANCE
INVERTER
DELAY
LINE
RF IN LOAD
Fig. 1: Block scheme of the designed AB-C DPA.
MAIN
PEAK
21W
2nd harmonic
tuning
3rd harmonic
closers
Fundamental
Tuners
90º
42 W
360º30º
30º
90º
90º
90º
90º
45º
45º
DC BIAS
DC BIAS
Fig. 2: Detailed scheme of the output matching net-
work for the designed DPA.
The design of the output matching networks
(OMNs) of the main and peak amplifiers, whose
topologies are sketched in Fig. 2, has been car-
ried out through careful exploitation of the active
device foundry model (with parasitics deembed-
ding), and Agilent Momentum EM simulations
of the passive networks. The Ropt = 30 Ω opti-
mum load of the main amplifier at the fundamen-
tal frequency, found in tuned load conditions,
must be increased by a factor of 1.41 [3] when
using second harmonic tuning, thus leading to
Ropt,main = 42 Ω. The OMN of the main stage
has been therefore designed to produce a load
of 84 Ω, before the Doherty region, and of 42 Ω
at its end. Finally, two λ/4 impedance trans-
formers have been exploited to achieve the main
load modulation, and for the output matching
to the external 50 Ω load. From Fig. 3 it can
be seen that the ratio between the fundamental
and second harmonic components of the drain
voltage is maintained almost constant for the
6 dB Doherty region of the DPA thus leading to
a proper harmonic shaping of the drain voltage
waveforms.
5 10 15 20 25 30 350 40
10
20
30
0
40
P , dBmIN
DC=28 V
V,VDS
Fig. 3: Harmonic component simulation of the Main
amplifier drain voltage: DC (light blue), fun-
damental (red) and II harmonic (blue).
According to the Doherty approach, the peak
amplifier has been designed to ensure the correct
load modulation of the main amplifier and, at the
same time, the proper Class C loading termina-
tion for optimum power and efficiency.
The input power divider has been designed
with uneven splitting to fed a larger input power
to the peak, than to the main amplifier. This was
made in order to combine the correct switch-on
and gain of the peak amplifier. The optimized
input divider ratio was found to be 42% for
the main, and 58% for the peak. This splitting
factor was obtained through a microstrip branch
line optimized using electromagnetic simulations
carried out with ADS Momentum; the final
branch layout is shown in Fig. 4, while the EM
simulation results of the designed branch line
divider are shown in Fig. 5. Due to the high
power level to be handled, an external 50 Ω
load connected with a SMA connector at the
branch line isolated port has been introduced
instead of a SMD resistor. Finally, the input
matching networks (IMNs), embedding the RC
stabilization network, were designed to achieve
a matching better than -10 dB over a 170 MHz
bandwidth (see Fig. 6).
Fig. 4: Layout of the designed branch line divider.
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.93.0 4.0
-5.0
-4.5
-4.0
-3.5
-3.0
-5.5
-2.5
-35
-30
-25
-20
-15
-40
-10
Frequency, GHz
S,S,dB2131
S,S,dB1141
Fig. 5: EM simulations of the branch line uneven
divider: S11 (black + crosses), S41 (green +
triangles), S21 (red + circles) and S31 (blue +
squares).
The microstrip circuit, fabricated exploiting
a Taconic substrate with copper metalization
(RF35 with r = 3.5, H = 0.76 mm and t =
0.035 mm) has been mounted on an aluminum
carrier ensuring a properly dimensioned heat
dissipator: a picture of the realized amplifier is
presented in Fig. 7.
III. RESULTS
The DPA has been characterized in small
signal condition, and under single tone large
signal excitation [8], [9], with nominal bias
VDS,main = 28 V, VGS,main = −2.73 V (10%
IDSS), VDS,peak = 28 V, and VGS,peak = −7 V.
2 3 4 51 6
-50
-40
-30
-20
-10
0
10
-60
20
freq, GHz
S21,S11,dB
Fig. 6: Simulations (solid lines) and measurements
(symbols) for S11 (blue) and S21 (red) of the
DPA.
Fig. 7: Picture of the fabricated DPA.
Bias adjustments, to account for the expected
loss of model accuracy for the deep class C
active device of the peak, has been carried out
(see [3], [10]), and the experimentally optimized
values resulted unchanged for the main, while,
VDS,peak = 26 V and VGS,peak = −8.1 V have
been finally selected. As an example of the
agreement found in small-signal conditions, be-
tween simulated (solid lines) and experimen-
tal data (symbols), concerning S11 (blue) and
S21 (red) of the realized DPA are shown in
Fig. 6. Fig. 8 summarizes instead the DPA power
performances, showing output power, gain and
efficiency. All values are in good agreement,
although the measured efficiency is somewhat
lower than the simulated one. The resulting
saturated output power is around 43.5 dBm for
an input power of 36 dBm. The first peak effi-
ciency, according to the Doherty theory, appears
at roughly 6 dB input back-off from the second
one, for both measurements and simulations, and
the measured drain efficiency, higher than 55%
in a 6 dB IBO range with respect of the saturated
power, exhibits a gain roll-off in the Doherty
region lower than 1.4 dB.
The DPA main and peak measured DC cur-
rent, relative to the maximum current of 700 mA,
are reported in Fig. 9 stressing the correct peak
amplifier turn on when the main stage reaches
the first efficiency peak, and thus demonstrating
the behavior expected from the Doherty theory.
5 10 15 20 25 30 350 40
20
40
60
0
80
PIN, dBm
POUT,Gain,Efficiency,dBm,dB,%
Fig. 8: Single Tone measurement of the 3.5 GHz
DPA. Lines refer to simulations, while sym-
bols to the measurements. Output power
(black), Transducer gain (red) and Drain effi-
ciency (blue).
Fig. 9: Measured DC drain currents of Main (Blue)
and Peak (Red) amplifiers
IV. CONCLUSIONS
Design strategy, implementation details, and
results on the characterization of a Doherty
Power Amplifier for 3.5 GHz WiMAX appli-
cations, based on a 10 W Cree GaN device
has been presented and demonstrated. The fi-
nal microstrip realization, fabricated on RF35
Taconic substrate, has shown a maximum output
power of 22 W and efficiency higher than 55 %
for 6 dB output power span, corresponding to
the designed Doherty region. The monitoring of
the main and peak amplifier DC currents as a
function of the power level demonstrated the
correct switch on of the peak amplifier relatively
to the main stage, and therefore the proper Do-
herty operation of the presented power module.
The measured performances show a significant
improvement with respect to previous published
results for the same frequency and application.
V. ACKNOWLEDGMENTS
The authors wish to acknowledge the support
of the NEWCOM++ and PRIN 2007 M3ICGAN
projects.
REFERENCES
[1] L. Nuaymi, “WiMAX: technology for broadband wire-
less access”, John Wiley & Sons, Ltd, 2007.
[2] C. Ciochina, F. Buda, H. Sari, “An Analysis of OFDM
Peak Power Reduction Techniques for WiMAX Sys-
tems”, Communications, 2006. ICC ’06. IEEE Interna-
tional Conference on, vol.10, pp.4676-4681, June 2006.
[3] P. Colantonio, F. Giannini, E. Limiti, “High Efficiency
RF and Microwave Solid State Power Amplifiers”,
John Wiley & Sons, Ltd, 2009.
[4] W. H. Doherty,“A New High Efficiency Power Ampli-
fier for Modulated Waves”, Proceedings of the Institute
of Radio Engineers, vol.24, no.9, pp. 1163- 1182, Sept.
1936.
[5] J.-C. Park, D. Kim, C.-S. Yoo, W. Sung Lee, J.-G.
Yook, C. Koo Hahn, “Efficiency enhancement of the
Doherty amplifier for 3.5 GHz WiMAX application
using class-F circuitry”, Microwave and Optical Tech-
nology Letters, Vol. 52, No. 3, March 2010
[6] Cree Inc., “CGH40010 10 W, RF Power GaN HEMT”,
Cree website www.cree.com.
[7] J. Moon, J. Kim, I. Kim, Y. Y. Woo, S. Hong, H. S.
Kim, J. S. Lee, B. Kim, “GaN HEMT Based Doherty
Amplifier for 3.5-GHz WiMAX Applications”, Proc.
10th Europ. Conf. on Wireless Techn., 2007, pp.395-
398, 8-10 Oct. 2007.
[8] M. Pirola, V. Teppati, V. Camarchia, “Microwave Mea-
surements Part I: Linear Measurements,” IEEE Instru-
mentation & Measurement Magazine, Vol. 10-2, pp.
14-19, 2007.
[9] V. Camarchia, V. Teppati, S. Corbellini, M. Pirola, “Mi-
crowave Measurements. Part II - Nonlinear Measure-
ments”, IEEE Instrumentation & Measurement Maga-
zine, Vol. 10-3, pp. 34-39, 2007.
[10] T. Yamamoto, T. Kitahara, S. Hiura, “50 % Drain
Efficiency Doherty Amplifier with Optimized Power
Range for W-CDMA Signal”, Microwave Symposium,
2007. IEEE/MTT-S International, pp.1263-1266, 3-8
June 2007

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efficiency_power_at_3.5ghz

  • 1. A 22 W 65% efficiency GaN Doherty power amplifier at 3.5 GHz for WiMAX applications Jorge Moreno Rubio1 , Jie Fang1 , R. Quaglia1 , V. Camarchia1,2 , M. Pirola1 , S. Donati Guerrieri1 , G. Ghione1 1 Dipartimento di Elettronica, Politecnico di Torino Corso Duca degli Abruzzi, 29, I-10129 Torino, ITALY 2 Center for Space Human Robotics, Italian Institute of Technology, C.so Trento 21, 10129 Torino, ITALY e-mail: vittorio.camarchia@iit.it Abstract—The design, implementation and characterization of a Doherty Power Amplifier (DPA) for 3.5 GHz WiMAX applications are dis- cussed. The DPA has been implemented using a commercial GaN HEMT from Cree inc., following a class AB and C scheme for the main and peak module, respectively. The measured maximum power of the DPA is 22 W with a first peak efficiency of 57%, and maximum drain efficiency of 65% at the DPA saturation. Efficiency over the so-called Doherty region (where both the main and the peak amplifiers operate) does not drop below 55% from saturation to 6 dB input back-off. The gain at the onset of the Doherty region is 8 dB, with around 1 dB roll-off. Index Terms—GaN, power amplifier, wireless communications, Doherty I. INTRODUCTION The high signal Peak to Average Power Ra- tio (PAPR) typical of many modern wireless communication standards [1], [2] implies that transmitter amplifies operate on average with a significant power back-off with respect to the maximum output power. In fact, the high dy- namics of the instantaneous signal power, con- ventionally described by the PAPR parameter, makes the PAs work on a large interval of power ranges, rather than at a fixed level, as in the case of constant or quasi-constant envelope modula- tions (e.g. GSM signal). In these conditions, the behavior of the efficiency as a function of the power level is definitely more important than the maximum efficiency in power saturation. Under this respect, a significant figure of merit will be the average efficiency, weighted according to the statistical distribution of the instantaneous power. In the present paper we focus of the WiMAX standard, whose signal exhibits a PAPR of sev- eral dBs (up to 9 dB). To achieve high efficiency on a large output power range, the Doherty scheme, due to its relative simplicity, is one of the most exploited solutions, although its application to high frequencies (typically above a few GHz) exploiting conventional technologies (e.g. Si based LDMOS) poses significant chal- lenges [3], [4]. In this framework, the GaN based HEMT technology appears to be the most valid candidate to replace LDMOS devices for higher frequency, even if only few results on DPA at frequency above the WiFi band, around 2.4 GHz, have been so far published. The paper presents the design strategy, imple- mentation details, and experimental results of a DPA fabricated with a commercial GaN process for WiMAX applications, i.e. 28 MHz bandwidth around 3.5 GHz. The realized DPA exhibits an output power higher than 22 W, with efficiency higher than 55% in a 6 dB input power back-off (OBO) range, therefore demonstrating very good efficiency performances when compared with recently published works adopting similar device technology, for the same kind of applications, e.g. [5]. The paper is organized as follows: section II describes the several steps of the design pro- cedure, section III presents and discusses the carried out measurements, while in section IV some conclusions are finally drawn. II. DESIGN STRATEGY The active device employed in the DPA is the CGH40010 from Cree inc., a GaN HEMT with Copyright © 2011 IEEE. Reprinted from the IEEE Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC 2011) April 18th - 19th, 2011 in Vienna, Austria This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Cree’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertis- ing or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org By choosing to view this document, you agree to all provisions of the copyright laws protecting it.
  • 2. typical output power of 10 W in C band, at the suggested drain bias of 28 V [6]. As a prelimi- nary step, a cold-FET characterization campaign has been carried out to identify the extrinsic ele- ments, needed to deembed the parasitic elements, and accurately transfer the external loads to the intrinsic drain current generator reference plane. The DPA configuration is the well-known AB- C scheme (see Fig. 1), with a class AB and a class C amplifiers used as main and peak stage, respectively. To further increase the efficiency, the main amplifier has been designed exploiting a second harmonic tuning approach [3], rather than following a more conventional AB tuned load strategy. PEAK “C” MAIN “AB” UNEVEN DIVIDER IMPEDANCE INVERTER DELAY LINE RF IN LOAD Fig. 1: Block scheme of the designed AB-C DPA. MAIN PEAK 21W 2nd harmonic tuning 3rd harmonic closers Fundamental Tuners 90º 42 W 360º30º 30º 90º 90º 90º 90º 45º 45º DC BIAS DC BIAS Fig. 2: Detailed scheme of the output matching net- work for the designed DPA. The design of the output matching networks (OMNs) of the main and peak amplifiers, whose topologies are sketched in Fig. 2, has been car- ried out through careful exploitation of the active device foundry model (with parasitics deembed- ding), and Agilent Momentum EM simulations of the passive networks. The Ropt = 30 Ω opti- mum load of the main amplifier at the fundamen- tal frequency, found in tuned load conditions, must be increased by a factor of 1.41 [3] when using second harmonic tuning, thus leading to Ropt,main = 42 Ω. The OMN of the main stage has been therefore designed to produce a load of 84 Ω, before the Doherty region, and of 42 Ω at its end. Finally, two λ/4 impedance trans- formers have been exploited to achieve the main load modulation, and for the output matching to the external 50 Ω load. From Fig. 3 it can be seen that the ratio between the fundamental and second harmonic components of the drain voltage is maintained almost constant for the 6 dB Doherty region of the DPA thus leading to a proper harmonic shaping of the drain voltage waveforms. 5 10 15 20 25 30 350 40 10 20 30 0 40 P , dBmIN DC=28 V V,VDS Fig. 3: Harmonic component simulation of the Main amplifier drain voltage: DC (light blue), fun- damental (red) and II harmonic (blue). According to the Doherty approach, the peak amplifier has been designed to ensure the correct load modulation of the main amplifier and, at the same time, the proper Class C loading termina- tion for optimum power and efficiency. The input power divider has been designed with uneven splitting to fed a larger input power to the peak, than to the main amplifier. This was made in order to combine the correct switch-on and gain of the peak amplifier. The optimized input divider ratio was found to be 42% for the main, and 58% for the peak. This splitting factor was obtained through a microstrip branch line optimized using electromagnetic simulations carried out with ADS Momentum; the final branch layout is shown in Fig. 4, while the EM simulation results of the designed branch line divider are shown in Fig. 5. Due to the high power level to be handled, an external 50 Ω
  • 3. load connected with a SMA connector at the branch line isolated port has been introduced instead of a SMD resistor. Finally, the input matching networks (IMNs), embedding the RC stabilization network, were designed to achieve a matching better than -10 dB over a 170 MHz bandwidth (see Fig. 6). Fig. 4: Layout of the designed branch line divider. 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.93.0 4.0 -5.0 -4.5 -4.0 -3.5 -3.0 -5.5 -2.5 -35 -30 -25 -20 -15 -40 -10 Frequency, GHz S,S,dB2131 S,S,dB1141 Fig. 5: EM simulations of the branch line uneven divider: S11 (black + crosses), S41 (green + triangles), S21 (red + circles) and S31 (blue + squares). The microstrip circuit, fabricated exploiting a Taconic substrate with copper metalization (RF35 with r = 3.5, H = 0.76 mm and t = 0.035 mm) has been mounted on an aluminum carrier ensuring a properly dimensioned heat dissipator: a picture of the realized amplifier is presented in Fig. 7. III. RESULTS The DPA has been characterized in small signal condition, and under single tone large signal excitation [8], [9], with nominal bias VDS,main = 28 V, VGS,main = −2.73 V (10% IDSS), VDS,peak = 28 V, and VGS,peak = −7 V. 2 3 4 51 6 -50 -40 -30 -20 -10 0 10 -60 20 freq, GHz S21,S11,dB Fig. 6: Simulations (solid lines) and measurements (symbols) for S11 (blue) and S21 (red) of the DPA. Fig. 7: Picture of the fabricated DPA. Bias adjustments, to account for the expected loss of model accuracy for the deep class C active device of the peak, has been carried out (see [3], [10]), and the experimentally optimized values resulted unchanged for the main, while, VDS,peak = 26 V and VGS,peak = −8.1 V have been finally selected. As an example of the agreement found in small-signal conditions, be- tween simulated (solid lines) and experimen- tal data (symbols), concerning S11 (blue) and S21 (red) of the realized DPA are shown in Fig. 6. Fig. 8 summarizes instead the DPA power performances, showing output power, gain and efficiency. All values are in good agreement, although the measured efficiency is somewhat lower than the simulated one. The resulting saturated output power is around 43.5 dBm for an input power of 36 dBm. The first peak effi- ciency, according to the Doherty theory, appears at roughly 6 dB input back-off from the second
  • 4. one, for both measurements and simulations, and the measured drain efficiency, higher than 55% in a 6 dB IBO range with respect of the saturated power, exhibits a gain roll-off in the Doherty region lower than 1.4 dB. The DPA main and peak measured DC cur- rent, relative to the maximum current of 700 mA, are reported in Fig. 9 stressing the correct peak amplifier turn on when the main stage reaches the first efficiency peak, and thus demonstrating the behavior expected from the Doherty theory. 5 10 15 20 25 30 350 40 20 40 60 0 80 PIN, dBm POUT,Gain,Efficiency,dBm,dB,% Fig. 8: Single Tone measurement of the 3.5 GHz DPA. Lines refer to simulations, while sym- bols to the measurements. Output power (black), Transducer gain (red) and Drain effi- ciency (blue). Fig. 9: Measured DC drain currents of Main (Blue) and Peak (Red) amplifiers IV. CONCLUSIONS Design strategy, implementation details, and results on the characterization of a Doherty Power Amplifier for 3.5 GHz WiMAX appli- cations, based on a 10 W Cree GaN device has been presented and demonstrated. The fi- nal microstrip realization, fabricated on RF35 Taconic substrate, has shown a maximum output power of 22 W and efficiency higher than 55 % for 6 dB output power span, corresponding to the designed Doherty region. The monitoring of the main and peak amplifier DC currents as a function of the power level demonstrated the correct switch on of the peak amplifier relatively to the main stage, and therefore the proper Do- herty operation of the presented power module. The measured performances show a significant improvement with respect to previous published results for the same frequency and application. V. ACKNOWLEDGMENTS The authors wish to acknowledge the support of the NEWCOM++ and PRIN 2007 M3ICGAN projects. REFERENCES [1] L. Nuaymi, “WiMAX: technology for broadband wire- less access”, John Wiley & Sons, Ltd, 2007. [2] C. Ciochina, F. Buda, H. Sari, “An Analysis of OFDM Peak Power Reduction Techniques for WiMAX Sys- tems”, Communications, 2006. ICC ’06. IEEE Interna- tional Conference on, vol.10, pp.4676-4681, June 2006. [3] P. Colantonio, F. Giannini, E. Limiti, “High Efficiency RF and Microwave Solid State Power Amplifiers”, John Wiley & Sons, Ltd, 2009. [4] W. H. Doherty,“A New High Efficiency Power Ampli- fier for Modulated Waves”, Proceedings of the Institute of Radio Engineers, vol.24, no.9, pp. 1163- 1182, Sept. 1936. [5] J.-C. Park, D. Kim, C.-S. Yoo, W. Sung Lee, J.-G. Yook, C. Koo Hahn, “Efficiency enhancement of the Doherty amplifier for 3.5 GHz WiMAX application using class-F circuitry”, Microwave and Optical Tech- nology Letters, Vol. 52, No. 3, March 2010 [6] Cree Inc., “CGH40010 10 W, RF Power GaN HEMT”, Cree website www.cree.com. [7] J. Moon, J. Kim, I. Kim, Y. Y. Woo, S. Hong, H. S. Kim, J. S. Lee, B. Kim, “GaN HEMT Based Doherty Amplifier for 3.5-GHz WiMAX Applications”, Proc. 10th Europ. Conf. on Wireless Techn., 2007, pp.395- 398, 8-10 Oct. 2007. [8] M. Pirola, V. Teppati, V. Camarchia, “Microwave Mea- surements Part I: Linear Measurements,” IEEE Instru- mentation & Measurement Magazine, Vol. 10-2, pp. 14-19, 2007. [9] V. Camarchia, V. Teppati, S. Corbellini, M. Pirola, “Mi- crowave Measurements. Part II - Nonlinear Measure- ments”, IEEE Instrumentation & Measurement Maga- zine, Vol. 10-3, pp. 34-39, 2007. [10] T. Yamamoto, T. Kitahara, S. Hiura, “50 % Drain Efficiency Doherty Amplifier with Optimized Power Range for W-CDMA Signal”, Microwave Symposium, 2007. IEEE/MTT-S International, pp.1263-1266, 3-8 June 2007