The technical power point presentation on Survival Systems in Space and other extreme Environments for enthusiasts out there who are willing to go out and explore the rough terrains and other undiscovered secrets
Survival System for Extreme Environments-Let's Explore the beyond
1. Survival System for Extreme
Environments
-Kaishik Gundu(1140240)
-ManojPathi(1140074)
MICROSEARCH-2017
2. Contents:
• Extreme Environments & Electronics devices used in them
• Current Problems
• Solutions
• Si-Ge HBT Physics
• Si-Ge HBT Scaling Trends
• Si-Ge HBT Operation in Radiation Environment
• Si-Ge HBT Operation at Low Temperature
• Si-Ge HBT Operation at High Temperature
• Infrastructure
• Conclusion
• References
3. Extreme Environments:
• Heat flux: at atmospheric entry exceeding 1 kW/cm2 at atmospheric entry
• Hypervelocity impact: higher than 20 km/sec
• Low temperature: lower than -55°C
• High temperature: exceeding +125°C
• Thermal cycling: temperature extremes outside of the military standard range of -55°C to
+125°C
• High pressures: exceeding 20 bars
• High radiation: total ionizing dose (TID) exceeding 300 krad (Si)
Additional extremes include:
• Deceleration (g-loading): exceeding 100 g
• Acidic environments: such as the sulfuric acid droplets in Venusian clouds
• Dusty environments: such as experienced on Mars
4. Extreme environments in the solar system.
Plot comparing the temperature cycles observed
for electronics exposed to Venus and Mars surface
ambient environments, as well as the military
standard temperature cycle used for most space-
rated electronics.
5. Electronic Devices Used Extreme
Environments:
• Satellite systems
• On-Engine Automotive Electronics
• Remote Imaging Systems
• Sensors
6. Current Problems:
• Survival in High-Radiation Environments
• Survival in Particulate and Hypervelocity Impact Environments
• Operations at wide temperature ranges
• Operations at wide pressure ranges
• Reliability of Systems for Extended Lifetimes
7. Solutions:
• Hardening by process
• Hardening by design
But the process ‘2’ is less feasible than that of process ‘1’
11. Si-Ge HBT Operation in Radiation
Environment:
The three major issues of radiation environment are:
• Total Ionizing Dose Effect(TID)
• Displacement Damage(DD)
• Single Event Effects
12. Si-Ge HBT Operation at Low Temperature:
In a normal semiconductor when cooling takes place
• higher parasitic resistances
• the carrier diffusivity decreases
• tunneling-based leakage currents are enhanced
• shifts in operating points can easily occur
• carrier mobilities will generally rise with cooling(low to moderate doping)
While in case of a Si-Ge HBT
1) Generational node scaling will generally improve the low-temperature dc and ac
performances of Si-Ge HBTs
2) The breakdown voltages remain fairly constant with cooling
3) Device reliability is typically as good or even better at low temperatures than at
room temperature
13. Output characteristics of a first-generation SiGe HBT operating
at 27 ◦C and −230 ◦C, demonstrating its temperature invariance.
Output characteristics of a first-generation SiGe HBT
operating at temperatures below 300 mK.
14. Si-Ge HBT Operation at High Temperature
Percent change in output voltage as a function of the
operational hours of a SiGe precision voltage reference
operating at 300 ◦C. “Exp Comp” stands for
exponentially compensated, and “RHBD” stands for
radiation hardened by design.
15. Infrastructure:
• Step 1: To demonstrate that the transistors work well and reliably in
the intended environment.
• Step 2: To build electronic circuits from those devices and to
demonstrate that they also work well and reliably.
• Step 3: Uses circuits in Step 2 to construct in a more complex
subsystem or system and to show that it works well and reliably, too.
16. Measured output voltage versus temperature for a
SiGe BGR operating at sub-1-K temperatures.
Measured noise and gain as a function of
the frequency for a microwave (X-band)
SiGe low-noise amplifier operating at 300
K and 15 K.
17. Representation of the use of a SiGe REU chipset in a spacecraft
for RVHM. Each SiGe REU can be placed in an extreme
environment, and it is linked back to the (shielded/heated) main
spacecraft computer.
. Two-chip solution for a 16-channel SiGe REU and
the custom widetemperature-capable packaging that
is required to produce an integrated module for use
in space. Early prototypes are already flying in the
ISS.
18. Summary:
The unique features of SiGe HBTs offer a great potential for simultaneously being able
to cope with a wide variety of extreme environment operational conditions, including
the following: cryogenic temperatures (to sub-1 K), high temperatures (to 300 ◦C),
wide temperature ranges (sub-1 K to 300 ◦C), and under radiation exposure (both total
dose and heavy ions). This applicability of SiGe platforms to extreme environment
electronic systems can potentially be accomplished with no process modifications, and
it is expected to ultimately provide compelling advantages at the integrated circuit and
system level and across a wide class of envisioned commercial and defense
applications. The requisite infrastructure that is needed in utilizing SiGe in such
systems is presently being developed. The future of SiGe for extreme environment
electronics is bright.
19. References:
• Extreme Environment Electronics, J. D. Cressler
• Si–Ge Technology and Applications ,PDF
• Silicon-Germanium as an Enabling Technology for Extreme
Environment Electronics, PDF
• www.nasa.org
• www.ieee.org
• www.Wikipedia.org
