1. 1
Grace Pakeltis
University of Illinois at Urbana-
Champaign
Transfer Printing of Thin-Film, Microscale
III-V Lasers on Silicon
silicon
laser
silicon
laser

2. Motivation
2
 Beyond CMOS circuits
65 nm 45 nm 32 nm 22 nm 14 nm
???CNT, graphene
2D materials, …

3. III-V on silicon
3
 direct growth
 lattice mismatch
 antiphase boundary
 chip/wafer bonding
 bulk wafers/chips
 printing thin-film III-V
 laser fabrication
after printing
M. E. Groenert, et al., J. Appl. Phys.
93, 362 (2001)
A. W. Fang, et al., Opt.. Exp. 14,
9203 (2006)
J. Justice, et al., Nat. Photonics 6,
610 (2012)
H. Yang, et al., Nat. Photonics 6,
615 (2012)

4. Transfer fully formed III-V lasers on Si
4
 Thin-film micro GaAs lasers
 AlInGaAs double quantum wells
 Fabry-Perot ridge waveguide
 Emitting at ~ 820 nm
 AlAs sacrificial layer
 undercut by HCl
 Picked up by PDMS stamps

5. Thermally conductive interface
5
 Lasers printed on Si
 In-Ag bonding interface
 eutectic point ~ 150 C
top view cross sectional view

6. Thermal properties
6
top view
thermal modeling (current 60 mA)
 Lasing performance sensitive to device temperatures
 requires a heating sink
GaAs 55
SU-8 0.2
In 82
Thermal
Conductivity
(W/m/K)

7. Laser performance
7
 Lasers on different substrates
 electrical injection
 continuous wave operation at room temperature

8. Future work
8
 Integrate into Si based photonic circuits
 waveguides, modulators, photodetectors, etc
 Materials and devices at telecomm bands (~ 1.55 µm)
 InGaAsP lasers grown on InP substrates
200 µm
SiNx waveguides
with Intel Corp.

9. Acknowledgements
Thank you!
9
 Rogers group
 C. Robert and B. Corbett at Tyndall Institute, Ireland
 Ibrahim Ban at Intel Corp.

10. Acknowledgements
Thank you!
9
 Rogers group
 C. Robert and B. Corbett at Tyndall Institute, Ireland
 Ibrahim Ban at Intel Corp.