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[Type here]
Attempt all Questions.
1) What names are applied to the two types of BJT transistors? Sketch the basic construction of
each and label the various minority and majority carriers in each. Draw the graphic symbol next
to each. Is any of this information altered by changing from a silicon to a germanium base? (3 Marks)
2) (a) Using the characteristics of given Fig., determine the resulting collector current if IE=4.5mA
and VCB=4V.
(b) Repeat part (a) for IE=4.5mA and VCB=16 V.
(c) How have the changes in VCB affected the resulting level of IC?
(d) On an approximate basis, how are IE and IC related based on the results above?
(3 Marks)
3) Determine Vo and ID for the network of Fig. below . (3 marks)
4) Describe in your own words the conditions established by forward- and reverse-bias conditions on a p-
n junction diode and how the resulting current is affected. (3 Marks)
5) Determine VC and VB for the network of Fig. below:-
[Type here]

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Basic electronics

  • 1. [Type here] Attempt all Questions. 1) What names are applied to the two types of BJT transistors? Sketch the basic construction of each and label the various minority and majority carriers in each. Draw the graphic symbol next to each. Is any of this information altered by changing from a silicon to a germanium base? (3 Marks) 2) (a) Using the characteristics of given Fig., determine the resulting collector current if IE=4.5mA and VCB=4V. (b) Repeat part (a) for IE=4.5mA and VCB=16 V. (c) How have the changes in VCB affected the resulting level of IC? (d) On an approximate basis, how are IE and IC related based on the results above? (3 Marks) 3) Determine Vo and ID for the network of Fig. below . (3 marks) 4) Describe in your own words the conditions established by forward- and reverse-bias conditions on a p- n junction diode and how the resulting current is affected. (3 Marks) 5) Determine VC and VB for the network of Fig. below:-