1. Integrated Antennas at 60 GHz
S-­‐87.3163
Special
Assignment
in
Circuit
Technology
Amee
Amin
200635
amee.amin@aalto.fi

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1
Contents
1. Introduction…………………………………………………………....2
2. Short range wireless technologies……………………………………..3
2.1 Ultra-wideband (UWB) Wireless Personal Area Networks
(WPAN)…………………………………………………………...4
2.2 Zigbee………………………………………………………....4
2.3 60 GHz millimeter-wave WPAN……………………………...5
2.3.1 Issues for 60 GHz…………………………………….5
2.3.2 Broadband Circuit Technologies……………………..6
3. IC technologies………………………………………………………..6
3.1 Low Temperature Co-fired Ceramic (LTCC)…………………7
3.2 Multi Chip Module (MCM) using Deposited thin films/
Laminate (MCM D/L)…………………………………………….8
3.3 Complementary Metal Oxide Semiconductor (CMOS)………8
4. On-chip Antennas……………………………………………………..9
4.1 Current challenges………………………………………….....9
4.2 Antenna design solutions……………………………………...9
5. Analysis and simulation results……………………………………...13
5.1 Proposed antenna design……………………………………..13
5.2 Simulation results for antenna with varied element
separation………………………………………………………...14
5.3 Simulation results for antenna with metal layer……………..15
5.4 Comparison of simulation results for antenna with and without
metal layer……………………………………………………….15
6. Conclusions…………………………………………………….........18
7. References…………………………………………………………...19

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1. Introduction
Within the past decade, the wireless community has become
increasingly interested in 60 Gigahertz (GHz) radio frequency (RF) band.
In 2001, the United States Federal Communications Commission (FCC)
released 7 GHz of bandwidth (57-64 GHz) for unlicensed use, while
other governments have similarly allowed portions of the 60 GHz band
to be used without a license. While the precise frequency allocation is
different in each country, all bands share a common 5 GHz of continuous
unlicensed bandwidth centered at 60 GHz [1]. With such large RF
bandwidths available at 60 GHz, data rates of several gigabits per second
(Gbps) are feasible for short-range wireless communications. Wireless
personal area networks (WPANs) at 60 GHz will enable a vast array of
applications such as Wireless Memory, Wireless High Definition
Multimedia Interface (HDMI) and Point-to-point links at 60 GHz.
However, for 60 GHz technology to be adopted rapidly, system cost and
power consumption must be kept as small as possible. Fully integrated
CMOS circuitry offers the greatest cost and power savings, especially
when considering packaging, integration, and interconnects issues.
A key factor for the implementation of low cost 60 GHz systems is
integrating an antenna on-chip with CMOS circuits so that an entire
wireless communication system can be manufactured with foundry
fabrication. Even if only passive antennas are fabricated on a chip, easy
integration with other circuitry such as a printed circuit board (PCB) is
possible. Essentially, on-chip antennas, whether passive or active with
basic RF amplification stages, would provide more flexibility for the
design and implementation of consumer electronic devices, while
eliminating or greatly reducing material costs associated with RF
antennas. Combining RF circuits with integrated antennas at 60 GHz
poses several major challenges. Standard CMOS technology is not
optimized for millimeter wave technology as a result the substrate greatly
reduces antenna performance. Another challenge is the small distance
(typically several microns) between the radiating elements, the
surrounding metal layers, and low-resistance silicon (exists underneath
the metal layers of the IC substrate), which acts to distort the normal
radiation patterns that antenna engineers are accustomed to in free space.
Section (2-5) presents the survey from the literatures. Section 6
presents the proposed antenna design for integrated antennas and their
simulation results. The results are based on the compactness of the
antenna design and minimization of radiation losses. The element
separation of 1millimeter (mm) between the patch antennas gives better
impedance matching and noticeable antenna gain compared to other

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chosen dimensions. To minimize the radiation losses, the metal layer
should be kept as near as possible to the antenna i.e. towards Z-axis, so
that the radiation becomes omnidirectional.
2. Short-range wireless technologies
According to the current discussions based on standardization,
regulation, and development issues associated with the short-range
wireless technologies for the next generation personal area networks,
Ultra-wideband (UWB) and 60 GHz millimeter-wave communication
technologies have immerged as the most promising ones for short range
broadband wireless communication in multigigabit wireless networks.
On the other extreme of these technologies is the Zigbee, which is
expected to be a pivotal short-range technology for low throughput and
ultra low-power consumption networks.
Table 1: Summary of characteristics of UWB, 60 GHz mm-wave based WPAN and
Zigbee [1]
As shown in Table 1, the above-mentioned technologies are
expected to play a vital role for short-range wireless communications.

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Compared to UWB technology, 60 GHz millimeter wave
communications will operate in currently unutilized spectrum and will
provide high data rates up to several gigabits per second for indoor
applications. This mm-wave environment provides desirable features
such as readily available pre-approved RF spectrum allocation, inherent
co-existence with directional antennas, security, and dense deployment.
Meanwhile the ZigBee Alliance, an industry consortium promoting low
power consumption WPAN wireless technology, is developing
specifications based on the low rate WPAN of the IEEE 802.15.4-2004
standard. For the WPAN technologies listed in Table 1, selection of
Medium Access Control (MAC) protocols is also critical for the
performance, cost, and usage. MAC protocols designed to support
multigigabit WPAN demonstrate unique features due to applications,
data rates, and networking structures.
2.1 UWB Wireless Personal Area Network (WPAN)
UWB technologies using short-pulse signals have been applied to
radar systems since the 1960s, and their communication applications
have attracted industry and academia since the 1990s. In addition to
communication applications, the UWB devices can be used for imaging,
measurement, and vehicular radar. According to the requirement of the
first report and order (RAO) of the Federal Communications
Commission (FCC) [2], the fractional bandwidth or the transmission
bandwidth of UWB signals should be greater than 0.2 or 500 MHz,
respectively; this open definition does not specify any air interface or
modulation for UWB.
2.2 Zigbee Technology
Although wireless control and sensor networking are at the other
end of high-speed networks with quality of service (QoS) support, these
low-power consumption and low-data rate WPAN are driven by
applications in the retail, medical and logistics fields. This low
throughput and low-cost wireless technology, named ZigBee, adopts the
IEEE 802.15 TG4 low-data rate WPAN standard [3,4]. While low
throughput and low-power consumption networking hold great potential,
several open issues must be addressed for a successful realization of the
potential. The crucial issue is how to realize a low-power consumption
and low-cost network of ZigBee devices. This challenging task cannot be
accomplished by an isolated methodology alone; a system-level approach
ranging over wide layers is required. For ZigBee device realization, a
highly integrated single chip using CMOS technology is preferred to

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combine analog and digital circuits with tolerable RF performance. The
choice of transceiver architecture is a trade-off among cost, complexity,
performance, and power consumption. Zero-IF or direct conversion is
one of the promising candidates because it enables digital preferred
design, low power, and simplicity.
2.3 60 GHz millimeter-wave WPAN
The 60 GHz millimeter-wave radio can provide medium- and
short-range wireless communications with a variety of advantages. Huge
and readily available spectrum allocation, dense deployment or high
frequency reuse, and small form factor can pave the way to multigigabit
wireless networks [5]. Throughout the world approximately 5–7 GHz
bandwidth is available over the 60 GHz millimeter- wave band. This
continuous and clean bandwidth facilitates multigigabit wireless
transmission. When considering the regulatory delay of UWB, this
prospect is very encouraging. In addition to clear and large spectrum
allocation, the 60 GHz millimeter-wave channel shows higher path loss
than the lower microwave bands. In addition, the atmospheric oxygen
(O2) absorption and rain interference are known to increase attenuation
by 10–15 dB/km beyond 2 km. The propagation properties of indoor 60
GHz channel decrease interference to other systems or collocated 60
GHz networks and increase frequency reuse factors and space efficiency
[7]. Furthermore, high signal attenuation can strictly confine the physical
range of a network, which enables more secure wireless communications.
The size of a product, as well as technical performance, can become a
crucial factor for marketing. An antenna or other RF components of 60
GHz frequency can be implemented in a slimmer size than other
microwave band systems due to a short wavelength of about 5 mm. Thus,
we can shrink mobile or portable wireless devices of 60 GHz millimeter-
wave-based WPAN.
2.3.1 Issues for 60 GHz
The 60 GHz millimeter-wave band evidently provides short-range
wireless systems with unprecedented advantages in terms of bandwidth,
high space efficiency, security, and form factor. However, this
millimeter-wave spectrum also poses challenges that must be resolved
for successful deployment. Several experiments were carried out in [6,7]
for indoor broadband 60 GHz channels, which show high dependence on
the surrounding environments. One of the difficulties in analyzing
measured data in such experiments is that the measurements are coupled
with specific antennas and settings. For general channel modeling, how

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to decouple or couple these specific settings is a difficult task. Regarding
multiple antenna systems, multiple-input multiple-output (MIMO)
channel measurements are very rare and rank of 60 GHz MIMO
channel[s] have not been analyzed sufficiently yet.
2.3.2 Broadband Circuit Technologies
Conventionally, 60 GHz RF circuits have been realized using III-V
compound technologies such as gallium arsenide (GaAs) and indium
phosphide (InP). GaAs based monolithic microwave integrated circuits
(MMIC) are available in the market today. However, the price of the
solution is still too expensive to be adopted in WLAN or consumer
applications, and mass production also is difficult. While complementary
metal oxide semiconductor (CMOS) technology is considered as an ideal
solution in the point of cost and circuit integration, RF CMOS for 60
GHz frequency requires more performance improvement. Considering
performance and cost, currently, silicon germanium (SiGe) technology
seems to be a promising alternative to the GaAs or InP technology. The
SiGe solution provides MMIC circuits with tolerable noise figure and
power dissipation. Besides circuit technologies, 60 GHz circuits make
possible or require new implementation methodologies. For example,
antenna-on-chip design or implementing antennas by using wire bonding
shrinks the size of the system. Analogue processing for equalization and
synchronization may deal with speed and power consumption issues.
3. IC technologies
Presently there has been a tremendous growth in the wireless
communication. There are also many emerging applications of RF,
microwave and millimeter-wave circuits in areas such as wireless
personal communication and WLAN, satellite communications, and
automotive electronics. Such communication systems impose
requirements such as low weight, small volume and low power
communication. The decrease in weight and volume, increase in
frequency and greater functionality are necessitating the use of highly
integrated RF front-end circuits. Today there are three mainstream
technologies that can be used for RF applications [8].

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a. Low Temperature Co-fired Ceramic (LTCC) i.e. ceramics-based
thick-film technology
b. Multi Chip Module (MCM) using Deposited thin films/ Laminate
(MCM-D/L)
c. Complementary Metal Oxide Semiconductor (CMOS)
3.1 Low Temperature Co-fired Ceramic (LTCC) technology
LTCC has potential for low cost in high volumes. LTCC allows
the integration of capacitors, resistors and inductors in a single ceramic
or glass-ceramic body. They have smallest loss but larger size [8]. LTCC
technology offers stable and low-loss materials for millimeter waves and
there has been a significant amount of research going on LTCC modules
for 60-GHz point-to-point applications. The multilayer LTCC platform
allows direct and easy integration of passive components such as
antennas, power dividers, transmission lines, and filters. Furthermore,
active components can also be flip-chip connected to the LTCC substrate.
Flip-chip interconnections eliminate the parasitic inductances caused by
bonding wires. If the flip-chip process is not feasible in some cases,
ribbon bonding can be used instead of conventional wire bonding. The
material properties stay quite constant over a wide frequency range.
Instead, processing issues such as line-width variations due to printing
steps or shrinkage mainly affect the millimeter-wave performance of the
LTCC modules during firing [9]. For example; in case of Ferro A6LTCC
substrate, permittivity of 5.9, a loss tangent of 0.002 at 60GHz layer
thickness of 100um is observed [10]. Several observations are made on
the use of ceramic substrate (Kyocera LTCC GL550: ɛr = 5.7; tan δ =
0.019; conductor: copper). The relationship between the antenna
performance and the thickness or material of the substrate is studied. In
case that the substrate consists of two 150um thick glass ceramic layers,
an antenna gain of more than 20dBi and the bandwidth of about 4GHz
for a 64-element antenna were achieved. This result is no way inferior to
the typical patch antennas on organic substrates. Furthermore because
this antenna structures can be manufactured by the same technology as
MMIC packages or MCMs, it is ideal in realizing compact and low-cost
millimeter wave modules [11].

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3.2 Multi Chip Module (MCM) using Deposited thin films/ Laminate
(MCM-D/L) technology
MCM-D is applied using different materials. In MCM-D, the use
of thin films yields high precision components, very good
manufacturability and repeatability of complete RF structures. It also
opens the perspective to integrate MEMS and antennas or antenna arrays,
which is not possible in a single chip solution. The Benzocyclobutene
(BCB) (low loss dielectric substrate) based MCM-D has: a) low
dielectric constant with high temperature stability; b) low loss tangent; c)
insensitive to moisture absorption i.e. self-protective feature and d)
shows very low surface roughness of 20nm. The latter is extremely
important for ohmic losses at mm-wave frequencies [12].
3.3 Complementary Metal Oxide Semiconductor (CMOS)
CMOS has greater process variability, lower carrier mobility
constants, and smaller device breakdown voltages. They have larger loss
but smaller size. CMOS substrate is a good option for mass production.
But the main challenge in building antenna on it is the heavy energy loss.
The Si has a property of low resistivity and high permittivity, which
absorbs the energy propagating along it and decreases the antenna
efficiency. Designing high quality filters on CMOS is particularly
challenging because of the conductive silicon substrate. Unlike other
substrates, that are isolating, the conductive silicon bulk reduces the
quality factor of the resonators, introduces nonlinear effects and
distortion due to the induced eddy currents in the substrate as well as
coupling signals through the substrate between non adjacent resonators.
In order to minimize the coupling between non-adjacent resonators and
to reduce induced eddy currents, the substrate impedance needs to be
increased [13]. Moreover, micromachining technique and proton
implantation process can reduce the Si loss but again they have high
processing cost and poor compatibility [14].
Today CMOS is the dominating technology for most wireless
products due to its reliability, low fabrication cost and the ability to
access to completely integrated sub-systems, including both numerical
and analog functions, thus drastically reducing products cost [15]. The
main drawback of the CMOS technology for the implementing high-
speed circuits in mm-wave band is the low output power of power
amplifiers. The maximum output power of the implemented power
amplifiers at 60 GHz in CMOS has not gone beyond 10dBm. Though the

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issue of limited RF power capability and linearity is quite challenging but
it appears as realistic anyway [16].
4. On-chip Antennas
The possibility of integrating and combining antennas directly on
chip is one of the least explored areas for future sub-terahertz
communication devices. While radiation losses are extremely large due
to substrate absorption and conductive currents, minimal connections
between RF circuits and the antenna offers substantial cost reduction and
flexibility in circuit design for low-cost consumer electronics. Today’s
conventional thinking hardly justifies on-chip antennas for low-power
consumer devices due to high losses and low gains in the absence of
compensating structures such as dielectric lenses. Indeed, typical on-chip
antennas have only 10% radiation efficiency and negative gain. However,
if very high gain antenna structures can be designed and fabricated on
chip in sub-millimeter sizes (e.g., by using frequency selective surfaces
or highly directional antennas such as Yagi or rhombic antennas), then
the benefits of extreme cost reduction and improved design flexibility
may outweigh the use of more efficient off-chip antennas that require
more expensive and complex manufacturing processes.
4.1 Current Challenges
There are several challenges for on-chip antenna integration. First,
the area occupied by the antenna and the space for isolating the crosstalk
between antenna and active circuits should be considered. Additionally,
the lossy silicon substrate in a CMOS process degrades the antenna
performance significantly. Moreover, the design rules in CMOS
technology such as metal slotting and density requirement also impact
the antenna design [21]. On-chip antennas suffer from the low resistivity
and the high dielectric constant, causing energy dissipated in the
substrate instead of radiated into the air. Therefore, most of the antenna
topologies without shielding from the lossy substrate have low radiation
efficiency numbers, thus low antenna gains.
4.2 Antenna design solutions
Table 2 lists key data of the work in [17] with other Antenna-in-
Package (AiP) designs as well as related antenna solutions for highly
integrated 60-GHz radios. Actually it is difficult to make a fair
comparison between the different solutions since they are fabricated in

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different technologies and meant for different purposes. Nevertheless
from Table 2, one can say that basic radiating elements such as dipole,
slot, and patch are popular in AiP designs and excellent radiation
efficiency can be achieved in LTCC. Both wire-bonding and flip-chip
techniques are used for interconnecting the antenna to the radio chip. The
wire bond needs compensating, while the flip-chip does not. The
compensation is usually made in the package not on the chip.
Table 2: Performance summary of the antenna solutions for highly integrated 60
GHz radios [17]
Antenna is a key element and several antennas have been
introduced for an increasing number of applications [18-20]. According
to that, patch antennas are the best candidates for implementing in mm-
wave band due to low profile and low cost. For integrating such antennas
with ICs, system-on-a-chip (SoC) is one solution for small form factor
system integration of the radio RF front-end, digital baseband circuitry,
sensors and energy processing. Among the building blocks in a wireless
system, the antenna plays a critical role because it is traditionally off-
chip, and dominating the overall size of the system [21].
In a standard CMOS process, the resistivity of the silicon substrate
is approximately 10 Ω-cm, and the dielectric constant is 11.7. Due to low
resistivity and the high dielectric constant, energy dissipates in the
substrate instead of radiated into the air leading to low antenna gains.
Different types of on-chip antenna have been reported at 60 GHz and 77
GHz bands [22]-[23]. One of the suitable solutions is shown below. The
patch antenna has the highest radiation efficiency and antenna gain due to

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ground shielding of the antenna from the substrate, as shown in Figure 1.
Space below the patch antenna is required for integrating custom circuits
(e.g. DSP and memory) in a SoC application.
Figure 1: Layout cross section of the proposed integration scheme in a standard
0.13µm CMOS process [21]
Consequently, the patch antenna is a good candidate for system
integration due to the better performance and reusable area beneath the
patch. The patch needs a ground plane to shield the substrate, which can
be drawn in a lower metal layer in the CMOS process. The distance
between the patch (top-metal) and the ground metal layer determines the
height of the patch antenna. More separation between the patch and
ground metal is desirable for higher radiation efficiency, which translates
to using a lower metal layer for ground. Hence, an area-efficient layout is
proposed by exploiting the space beneath the patch ground plane for
digital circuitry.
The second solution can be the use of meta-material structure. The
main point here is to apply an Artificial Magnetic Conductor (AMC)
plane acting as a reflector between the patch antenna and the silicon
substrate to minimize the silicon substrate loss. Also, a Uniplanar
Compact Photonic Band Gap (UC-PBG) plane IS built on the same layer
surrounding the patch to increase the radiation gain at the operating

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frequency. Two one layer meta-material structures were used to produce
the high impedance electrical magnetic surface. The unit structures of
them are shown below in Figure 2 (a) and (b).
Figure 2: (a) Single unit (b) Single unit for UC-PBG
for AMC structure; structure [14]
Figure 3: Antenna Structure Layout with meta-material elements in Ansoft HFSS
Ver.12 [14]
As shown in Figure 3, the structure is fabricated with 0.13um
CMOS six-metal-layer process. The AMC structure is arranged in the
first metal layer, Ml and the UC-PBG structure is placed around the
patch antenna within the same layer of top metal layer. The lossy silicon
substrate absorbs most of the energy by converting it into heat or transfer
into ground while not letting it radiate out in the form of microwave.
With the use of AMC structure above silicon substrate, a perfect
magnetic conductor (PMC) is formed on the surface of the structure.
Different from perfect electrical conductor (PEC), the AMC surface

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provides an electric-field reflection coefficient of + 1 while not -1. This
property makes the surface formed an in-phase reflection with the
incident wave within a specified frequency band. Therefore at a certain
frequency range the microwave energy can be enhanced. On the other
hand, the UC-PBG element stopped microwave energy on the surface of
patch antenna flowing to the edge of substrate. As a result, it increases
the gain and directivity. The total size of this antenna package is
2.lmmx1.7mm [14]. A low profile patch antenna with two meta-material
structures to improve the performance and a gain enhancement of atleast
2dB is noticed compared to the other on-chip antennas structures
explored.
5. Analysis and simulation results
5.1 Proposed antenna design
Figure 4: Patch Array Antenna Design in Ansoft HFSS Ver. 13
The 3-D view of the patch array antenna design is presented in the
Figure 4. The element separation parameter (d) shown in the Figure 5
between the radiation elements (the yellow-colored square in the above
figure) has to be varied to obtain the related simulation results.

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5.2 Simulation results for antenna with varied element separation
Figure 5: Antenna dimensions in mm
Various simulation results were obtained for the element
separation d=0.5mm, 1.0 mm and 1.5mm. With 1.5mm element
separation, we get worse impedance matching compared to the 1.0 mm
case, but the radiation pattern is bit smoother. For the 0.5mm case the
matching is better than 1.0 mm case, but the gain of the antenna array is
smaller. Thus, if the 1mm element separation case is considered, it gives
better impedance matching and the antenna gain compared to the other
cases. The simulation results for the patch array antenna with 1mm
element separation are shown below. The aluminum (Al) metal layer is
placed beneath the antenna to minimize the radiation losses as shown in
the Figure 6. The simulation results for the same patch array antenna
with varied distance (h=0mm, 1mm and 5mm) between the antenna and
the metal layer are also shown below.
1mm
element
separation
(d)

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5.3 Simulation results for antenna with metal layer
Figure 6: Patch array antenna with Al metal layer
5.4 Simulation results comparing antenna with and without metal layer
-
Figure 7: Smith chart with and without metal layer
Al
metal
layer
with
h=
0mm

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Figure 8: S11comparison between with and without metal layer
Figure 9: Radiation Pattern (∅=0°) with and without metal layer

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Figure 10: Radiation Pattern (∅=90°) with and without metal layer
Figure 11: Gain comparison between with and without metal layer

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Figure 12: Polar plot comparison between with and without metal layer
Figure 7-11 shows the comparison of the simulation results for the
patch array antenna with and without metal layer. It seems that in
h=5mm case, better matching is observed compared to h=0mm case, but
the radiation pattern is similar to the case without metal layer. In h=0mm
case the radiation is directed towards Z-axis but the gain of the antenna
array is not improved compared to the case without metal layer. Thus, if
the radiation losses are to be minimized then the metal layer has to be
placed near to the antenna design.
6. Conclusions
60-GHz wireless communications technology can be the world’s
first massively broadband mm-wave communications technology. Over
the next decade, the advances in mm-wave CMOS technology and
movement to higher carrier frequencies will greatly impact the way
people consume media and how wireless networks and systems are
designed and deployed.
The results presented here are based on the compactness of the
antenna design and minimization of radiation losses for 60-GHz. The
element separation of 1mm between the patch antennas gives better
impedance matching and noticeable antenna gain compared to other
chosen dimensions. To minimize the radiation losses, the metal layer
should be kept as near as possible to the antenna because of which the

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radiation becomes omnidirectional i.e. towards Z-axis. More focus and
progress is needed in antenna integration, lower power components,
improved baseband and beam-forming processing, and in creating more
targeted and streamlined standards to bring 60-GHz and future mm-wave
wireless devices to consumers.
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