1. Lecture III.
. Transient and Steady-state
Photoconductivity in
Insulators, Theory and
Experiment
Small-signal limit
Drift Mobility
Trapping (shallow and deep)

2. Transient photoconductivity-
determination of the drift mobility

5. For an applied electric field
constant in position and time,
E=V/d, where V is the applied
potential across the
photoconductor, and d its
thickness.

6. Let v be the drift velocity, and μ be
the carrier mobility, so, by
definition,
μ=v/E
When the carriers reach the back
electrode (x=d), time is their-time-
of-flight t.
Then μ= (d/t)/(V/d)

23. Carrier Trapping

24. Shallow Traps

28. Deep Traps