For Buyers of devices the announcement that Samsung as well as ST will be a source for FD SOI really opens up opportunity for lower cost better performance devices with the backing of two world class suppliers. Also what is brilliant is Samsung is leveraging manufacturing capacity built mainly for Apple which should make them extremely competitive and give them a nice margin so they will be really interested in supporting FD SOI. Should also have a big impact on substrate suppliers.

1. STMicroelectronics
- Samsung
28nm FD-SOI Agreement
May 2014

2. Introduction
• An extended strategic collaboration between
Samsung and STMicroelectronics
• Samsung is licensing 28nm FD-SOI
• Samsung foundry provides a full spectrum of
28nm offerings
• To offer a dual high-volume fab option for ST
products
• Strengthens FD-SOI industry deployment
• Offers customers choice and security of supply
• Full design compatibility Samsung – ST
• Accelerates adoption in the targeted market

3. FD-SOI Benefits vs Bulk CMOS 3
Faster
Cooler
Simpler
End-user devices run cooler and last longer
Puts more powerful devices in the hands of the end user
Much simpler manufacturing process
Transistors at max frequencies are up to 30% faster than bulk CMOS,
enabling faster processors
Transistors are significantly more power efficient than bulk CMOS
devices with lower leakage and much wider range of operation points
down to lower voltages
Extensive use of existing fab infrastructure
Design porting from bulk is simple and fast

4. Extending the 28nm lifetime
• 28nm will be the longest process
generation with the highest volume
manufacturing
• FD-SOI extends the lifetime of 28nm by
offering improved power and performance
rivaling those from existing 20nm
technologies (which come with much
higher costs)
• FD-SOI allows use of essentially the
same fab equipment and following the
same design rules as 28nm Bulk
technology
• FD-SOI also significantly reduces the
process complexity

5. Target Markets
FD-SOI is very well suited for cost-sensitive markets
requiring power efficiency and performance
• Networking Infrastructure
• Consumer Multimedia
• Smartphones
• Internet of Things
• Automotive

6. Design support ready
• Samsung is licensing the 28nm FD-SOI
design platform (Process Design Kit (PDK),
foundation libraries, advanced IP, design
flow)
• Samsung and ST will support common
28nm FD-SOI library and IP
• The PDK is available now so customers can
design immediately.

7. Extended IP offer for 28nm FD-SOI 7
Standard cells
8T / 12T
RVT /LVT
Poly bias: 0,4,10,16nm
Low power: Isolation,
Level shifters
Memories
Low voltage
Single port / Dual port
ROM
Ultra-high speed SRAM
Specific
Process monitoring
Analog IPs
Antifuse memories
IOs
PLLs, V/T sensors,
eSwitch
Advanced IPs
ADC / /DAC
Frequency synthesizer
High speed links
(USBPHY, HDMI,
MPHY, DPHY, …)
Oscillators
Memory interfaces
(DDR3/4, LPDDR, …)
Sensors
(process, thermal, voltage)
Very-High speed links
(PCIex3, SATA3, UDB3)
Voltage regulators
Vbias generators
Available through 3rd party distributors

8. Demonstrated Reduced Design Effort
for Full 28nm SoC Porting
• Same design flow as for 32/28nm LP
• Same tools used
• Same design cycle time
• True concurrent engineering
• FD-SOI product received before bulk version
• Direct mapping of IPs + ECO
• Script based
• Faster than rerunning synthesis
• Floorplan reuse
CPU
Dual Cortex A9
+40% in speed
> 3X at low V
GPU
SGX544 MP1
+20% at nom V
Power reduction
HD camera
IP
+30% in speed
LPDDR2
533Mhz
-15% in power
PLLs
Up to 4.6GHz
-15% in power

9. Manufacturing ready
• FD-SOI is qualified for volume production at
ST’s Crolles facility today
• The Samsung 28nm FD-SOI process will be
qualified in early 2015 for volume production
• Process in ST and Samsung fabs will be fully
compatible

10. Summary
• An extended strategic collaboration between
Samsung and STMicroelectronics
• Samsung is licensing 28nm FD-SOI
• Strengthens FD-SOI industry deployment