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All Optically Driven MEMS Deformable Mirrors via Direct Cascading with  Wafer Bonded GaAs/GaP PIN Photodetectors ,[object Object],[object Object],[object Object],[object Object]
Outline ,[object Object],[object Object],[object Object],[object Object],[object Object]
Adaptive optics ,[object Object],[object Object],[object Object],Image Credit: Canada-France-Hawaii Telescope. Starburst galaxy NGC7469 With AO Without AO Medical Imaging (Human Retina) Image courtesy Center for Adaptive Optics.  With AO Without AO image credit: Center for Adaptive Optics
Spring Plate Mirrors Dynamic correction using MEMS mirror
Motivation Dense array of micro mirrors “ All optically driven MEMS deformable device via a photodetector array” J. Khoury et.al. Proc. Of SPIE Vol 6368 636804 Electrical actuation ,[object Object],[object Object],[object Object],[object Object],[object Object]
Earlier Work Mylar on GaAs Mylar on InGaAs PIN “ All optically driven MEMS deformable device via a photodetector array” J.Khoury et. al.  Proceedings of SPIE Vol. 6368. 636804. (2006) ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Device 2-D Schematic of a single pixel Equivalent circuit diagram ,[object Object],[object Object],[object Object],[object Object],V  Mirror V  Total V  PIN V  R
Working Principle I-V curve of the load resistor Equivalent circuit I-V characteristics of the PIN photodiode V Total  = V  PIN  + V  R V  Mirror V  Total V  PIN V  R
Working Principle Operation points of the MEMS device Equivalent circuit V  Total No light V  R = A V  Total V  R = B ,[object Object],[object Object],[object Object]
Spring plate fabrication
Spring plate fabrication
Spring Plate COMSOL snapshot showing voltage actuation “ Stress investigation of PECVD dielectric layers for advanced optical MEMS” A. Tarraf et.al. J.Micromech. Microeng. Vol.14 pg 317-323 Nano indentation results ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Interferometry Michelson interferometer setup Dark Light   Difference   Interference fringe patterns “ Patterned multipixel membrane mirror MEMS optically addressed spatial light modulator with megahertz response ” G.Griffith IEEE Photonics Technology Letters Vol.19 No.3 Feb 1, 2007 5-15 volts  required for Mirror actuation
Thin Film Resistor Thin film resistor testing ,[object Object],[object Object],[object Object],[object Object],Patterned resistors
GaAs PIN Diodes 0.6 µm 2 µm 1 µm P I N GaAs ≈  E+18 ≈   E+15 ≈   E+18 300 MBE growth structure of GaAs PINs “ Photoconductive optically driven deformable membrane for spatial light modulator applications utilizing GaAs substrates” B.Haji-Saeed et. al. App. Opt. Vol.45, No. 12, 20 th  April 2006 Mesa etch Schematic of ohmic contacts ,[object Object],[object Object],[object Object],[object Object]
Photoresponse Testing Photo response test setup GaAs PIN (before bonding) Measurement probes 830nm LASER GaAs PIN sample Laser N P Probes
GaAs PIN Photoresponse
Wafer Fusion   Schematic 3-D schematic of sandwiched wafers before fusion
Wafer Fusion 3-D schematic of fixture components Quartz tube Graphite fixtures Graphite shims
Wafer Fusion FEM simulation of the thermal stresses during bonding Wafer bonding fixture Wafer fusion furnace ,[object Object],[object Object],[object Object]
GaAs PINs on GaP Schematic of  polished and patterned sample Schematic of  polished  and etched sample
GaAs PINs on GaP Wafer bonded interface GaAs GaP After polish & wet etch GaAs GaP
GaAs PINs on GaP Close up Cross section
GaAs PINs on GaP Top view
Characterization Photo response test setup ,[object Object],[object Object],CCD image of single PIN back illumination Probe
Characterization V ,[object Object],[object Object],SU8 P I N SU8 R
Results A (Dark)  B (Light) Difference ,[object Object],[object Object],[object Object]
Final Device Spring plate and thin film resistor PIN with SU-8 pillars
Device Schematic
Final Testing On PIN diode On spring plate To Interferometer Work in progress!
Conclusion ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]
Acknowledgement ,[object Object],[object Object],www. uml.edu/photonics

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Optically Driven MEMS Mirror Array via Wafer Bonded GaAs/GaP PINs

Editor's Notes

  1. Mention name, photonics center, umass lowell advisor William Goodhue Speak the title
  2. Our group active in adaptive optics MEMS, device evolved New design, working priciple, optical Fabrication process, particularly interesting is the bonding Optical setup for I-V characteristics Finally, summarize
  3. Adaptive optics very important in fields like astronomy , LASER communication systems to remove atmospheric aberrations working principle : measures wave front distortion, and compensating for them using spatial phase modulators since these aberrations are constantly changing , dynamic correction using MEMS mirrors
  4. Adaptive optics very important in fields like astronomy , LASER communication systems to remove atmospheric aberrations working principle : measures wave front distortion, and compensating for them using spatial phase modulators since these aberrations are constantly changing , dynamic correction using MEMS mirrors
  5. Earlier work used mylar sheets, then moved to spring plates, electrical actuation All optical technique is much better for such devices as the arrays become smaller in dimensions and denser Earlier work with InGaAs detectors , 1550nm Now trying GaAs PINs
  6. Adaptive optics very important in fields like astronomy , LASER communication systems to remove atmospheric aberrations working principle : measures wave front distortion, and compensating for them using spatial phase modulators since these aberrations are constantly changing , dynamic correction using MEMS mirrors
  7. Incoming beam incident on the MEMS mirror Moving spring plate mirror made of SiN for correction Parallel plate capacitor Back illumination PIN diode Causes drop across thin film resistor made from TaN
  8. Idea is to get a voltage contrast across the spring plate Use a voltage source, or a fixed load resistor with current contrast The current contrast obtained from PIN detector (Light minus dark) Total voltage is sum of two, so easier to visualize on the same graph
  9. When no light is shining, its on point A When light shines, moves to point B So the following are desirable for optimum operation: High load resistance Acutation voltage as low as possible Lowest amount to dark current, and maximum current when light shines
  10. Simple interferometer setup Have a good understanding of the spring plate movement
  11. Simple interferometer setup Have a good understanding of the spring plate movement
  12. Mixed frequency results in lower stresses, which in turn means low actuation voltages InP etched with HCl Mechanical characterization done using comsol , and hysitron nanoindenter Optical characterization by monitoring fringes on Michelson interferometer
  13. Simple interferometer setup Have a good understanding of the spring plate movement
  14. We investigated various materials, but TaN is easier to fabricate and pattern High sheet resistance Explain figures
  15. Molecular beam epitaxy for controlled high quality growth Precise control of the growth rate and doping levels
  16. Molecular beam epitaxy for controlled high quality growth Precise control of the growth rate and doping levels
  17. Molecular beam epitaxy for controlled high quality growth Precise control of the growth rate and doping levels
  18. Molecular beam epitaxy for controlled high quality growth Precise control of the growth rate and doping levels
  19. Explain figure, and how we sandwich the samples face to face 2-D stress analysis used to optimize the fixture, for max stress on the samples, and least on the tubes
  20. Explain figure, and how we sandwich the samples face to face 2-D stress analysis used to optimize the fixture, for max stress on the samples, and least on the tubes
  21. Br-IBAE used for forming these pillars Though in final device we use wet etching to reach upto the P region
  22. Br-IBAE used for forming these pillars Though in final device we use wet etching to reach upto the P region
  23. Br-IBAE used for forming these pillars Though in final device we use wet etching to reach upto the P region
  24. Br-IBAE used for forming these pillars Though in final device we use wet etching to reach upto the P region
  25. Inverted microscope modified to test the samples Probes, and HeNe or 830nm
  26. Inverted microscope modified to test the samples Probes, and HeNe or 830nm
  27. After bonding the photo contrast drops to 20 micro amps, so requires higher load resistor to cause same drop across spring plate