8. Working Principle I-V curve of the load resistor Equivalent circuit I-V characteristics of the PIN photodiode V Total = V PIN + V R V Mirror V Total V PIN V R
30. Final Testing On PIN diode On spring plate To Interferometer Work in progress!
31.
32.
Editor's Notes
Mention name, photonics center, umass lowell advisor William Goodhue Speak the title
Our group active in adaptive optics MEMS, device evolved New design, working priciple, optical Fabrication process, particularly interesting is the bonding Optical setup for I-V characteristics Finally, summarize
Adaptive optics very important in fields like astronomy , LASER communication systems to remove atmospheric aberrations working principle : measures wave front distortion, and compensating for them using spatial phase modulators since these aberrations are constantly changing , dynamic correction using MEMS mirrors
Adaptive optics very important in fields like astronomy , LASER communication systems to remove atmospheric aberrations working principle : measures wave front distortion, and compensating for them using spatial phase modulators since these aberrations are constantly changing , dynamic correction using MEMS mirrors
Earlier work used mylar sheets, then moved to spring plates, electrical actuation All optical technique is much better for such devices as the arrays become smaller in dimensions and denser Earlier work with InGaAs detectors , 1550nm Now trying GaAs PINs
Adaptive optics very important in fields like astronomy , LASER communication systems to remove atmospheric aberrations working principle : measures wave front distortion, and compensating for them using spatial phase modulators since these aberrations are constantly changing , dynamic correction using MEMS mirrors
Incoming beam incident on the MEMS mirror Moving spring plate mirror made of SiN for correction Parallel plate capacitor Back illumination PIN diode Causes drop across thin film resistor made from TaN
Idea is to get a voltage contrast across the spring plate Use a voltage source, or a fixed load resistor with current contrast The current contrast obtained from PIN detector (Light minus dark) Total voltage is sum of two, so easier to visualize on the same graph
When no light is shining, its on point A When light shines, moves to point B So the following are desirable for optimum operation: High load resistance Acutation voltage as low as possible Lowest amount to dark current, and maximum current when light shines
Simple interferometer setup Have a good understanding of the spring plate movement
Simple interferometer setup Have a good understanding of the spring plate movement
Mixed frequency results in lower stresses, which in turn means low actuation voltages InP etched with HCl Mechanical characterization done using comsol , and hysitron nanoindenter Optical characterization by monitoring fringes on Michelson interferometer
Simple interferometer setup Have a good understanding of the spring plate movement
We investigated various materials, but TaN is easier to fabricate and pattern High sheet resistance Explain figures
Molecular beam epitaxy for controlled high quality growth Precise control of the growth rate and doping levels
Molecular beam epitaxy for controlled high quality growth Precise control of the growth rate and doping levels
Molecular beam epitaxy for controlled high quality growth Precise control of the growth rate and doping levels
Molecular beam epitaxy for controlled high quality growth Precise control of the growth rate and doping levels
Explain figure, and how we sandwich the samples face to face 2-D stress analysis used to optimize the fixture, for max stress on the samples, and least on the tubes
Explain figure, and how we sandwich the samples face to face 2-D stress analysis used to optimize the fixture, for max stress on the samples, and least on the tubes
Br-IBAE used for forming these pillars Though in final device we use wet etching to reach upto the P region
Br-IBAE used for forming these pillars Though in final device we use wet etching to reach upto the P region
Br-IBAE used for forming these pillars Though in final device we use wet etching to reach upto the P region
Br-IBAE used for forming these pillars Though in final device we use wet etching to reach upto the P region
Inverted microscope modified to test the samples Probes, and HeNe or 830nm
Inverted microscope modified to test the samples Probes, and HeNe or 830nm
After bonding the photo contrast drops to 20 micro amps, so requires higher load resistor to cause same drop across spring plate