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Device Modeling Report




COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: DF30SC4M
MANUFACTURER: SHINDENGEN




              Bee Technologies Inc.




 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                  Model description
 parameter
     IS        Saturation Current
     N         Emission Coefficient
     RS        Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




          All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit


               R1


                0.01m

   0Vdc   V1


                                U1

                     DF30SC4M



                     0




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)           Vfwd(V)
           Ifwd(A)                                                   %Error
                            Measurement        Simulation
                      1            0.335             0.336                     0.30
                      2            0.358             0.361                     0.84
                      4            0.396             0.394                    -0.58
                      6            0.418             0.419                     0.24
                     10            0.465             0.461                    -0.97
                     20            0.550             0.550                    -0.05
                     50            0.780             0.779                    -0.19




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit


                        V2


                              0Vdc

   V2 = 40      V1
   V1 = 0                               U1
   TD = 0
   TR = 10ns
   TF = 50ns                 DF30SC4M
   PW = 5us
   PER = 10us



                             0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)            Cj(pF)
           Vrev(V)                                                   %Error
                            Measurement        Simulation
                     0.1         2520.00           2400.00                    -4.76
                     0.2         2450.00           2528.00                     3.18
                     0.5         2110.00           2185.00                     3.55
                       1         1690.00           1729.00                     2.31
                       2         1300.00           1306.00                     0.46
                       5           850.00            855.20                    0.61
                      10           600.00            604.80                    0.80
                      20           420.00            423.80                    0.90
                      40           300.00            295.90                   -1.37




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

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SPICE MODEL of DF30SC4M (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ SCHOOTTKY RECTIFIER / STANDARD PART NUMBER: DF30SC4M MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit R1 0.01m 0Vdc V1 U1 DF30SC4M 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 1 0.335 0.336 0.30 2 0.358 0.361 0.84 4 0.396 0.394 -0.58 6 0.418 0.419 0.24 10 0.465 0.461 -0.97 20 0.550 0.550 -0.05 50 0.780 0.779 -0.19 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5. Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit V2 0Vdc V2 = 40 V1 V1 = 0 U1 TD = 0 TR = 10ns TF = 50ns DF30SC4M PW = 5us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0.1 2520.00 2400.00 -4.76 0.2 2450.00 2528.00 3.18 0.5 2110.00 2185.00 3.55 1 1690.00 1729.00 2.31 2 1300.00 1306.00 0.46 5 850.00 855.20 0.61 10 600.00 604.80 0.80 20 420.00 423.80 0.90 40 300.00 295.90 -1.37 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004