SPICE MODEL of 1MBH05D-120 (Professional+FWDP Model) in SPICE PARK

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SPICE MODEL of 1MBH05D-120 (Professional+FWDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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Device Modeling Report

COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: 1MBH05D-120
MANUFACTURER: Fuji Electric
*REMARK: Free-Wheeling Diode (Professional Model)

Bee Technologies Inc.

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Transfer Characteristics

Circuit Simulation result

14A

12A

10A

8A

6A

4A

2A

0A
0V 4V 8V 12V 16V 20V
I(U1:C)
V_VGE

Evaluation circuit

U1 U2
1MBH05D-120 D1MBH05D-120_P
VCE
5Vdc
VGE
15Vdc

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Comparison Graph

Simulation result

Comparison table

Test condition: VCE =5 (V)

VGE (V)
IC (A) %Error
Measurement Simulation
0.350 8.000 8.082 1.02
6.600 10.000 9.970 -0.30
13.400 12.000 12.037 0.31

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Fall Time Characteristics

Circuit Simulation result

5.0A

4.5A

4.0A

3.5A

3.0A

2.5A

2.0A

1.5A

1.0A

0.5A

0A
2.0us 3.0us 4.0us 5.0us 6.0us
I(RL)
Time

Evaluation circuit

RL
Rg U1 U2 119.5
1MBH05D-120 D1MBH05D-120_P
V1 = -15
V2 = 15 33
TD = 0 V1
TR = 10n VCE
TF = 10n 600Vdc
PW = 3u
PER = 20u

0

Test condition: IC=5 (A), VCC=600 (V)

Parameter Unit Measurement Simulation %Error
tf us 0.250 0.252 0.78

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Gate Charge Characteristics

Circuit Simulation result

25V

20V

15V

10V

5V

0V
0 20n 40n 60n 80n 100n
V(W1:1)
Time*1mA

Evaluation circuit

V2

0

U1 U2 I1
1MBH05D-120 D2
D1MBH05D-120_P
Dbreak 5

I1 = 0 W1
I2 = 1m +
TF = 10n V3
TR = 10n -
TD = 0 I2 W
PER = 500m IOFF = 100uA 600
PW = 5m ION = 0A

0

Test condition: VCC=600 (V), IC=5 (A), VGE=15 (V)

Parameter Unit Measurement Simulation %Error
Qge nc 12.000 12.000 0.00
Qgc nc 26.000 25.565 -1.67
Qg nc 55.000 55.822 1.49

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Saturation Characteristics

Circuit Simulation result

10A

8A

6A

4A

2A

0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V
I(IC)
V(IC:-)

Evaluation circuit

U1 U2
1MBH05D-120 D1MBH05D-120_P
IC
0Adc
VGE
15Vdc

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Comparison Graph

Simulation result

Comparison table

Test condition: VGE =15 (V)

VCE (V)
Ic(A) %Error
Measurement Simulation
2.0 2.000 2.01 0.35
4.0 2.430 2.41 -0.71
6.0 2.800 2.81 0.35
8.0 3.200 3.20 0.12
10.0 3.600 3.60 -0.09

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Output Characteristics

Circuit Simulation result

20V 15V 12V
10A

8A

10V
6A

4A

2A

VGE=8V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(U1:C)
V_VCE

Evaluation circuit

U1 U2 VCE
1MBH05D-120 5Vdc
D1MBH05D-120_P

15Vdc VGE

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

FWD Forward Current Characteristics

Circuit Simulation result

5.0A

4.0A

3.0A

2.0A

1.0A

0A
0V 1.0V 2.0V 3.0V 4.0V
I(Vsense)
V(EC)

Evaluation circuit

Vsense
EC
V1
0Vdc

V2 U2 0Vdc
D1MBH05D-120_P
U1
1MBH05D-120

0

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Comparison Graph

Simulation result

Comparison table

VF (V)
IF(A) %Error
Measurement Simulation
0.4 1.450 1.485 2.41
1 1.800 1.786 -0.77
2 2.100 2.094 -0.31
3 2.350 2.330 -0.86
4 2.550 2.537 -0.52
5 2.700 2.728 1.02

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

Reverse Recovery Characteristics

Circuit Simulation result

6.0A

5.0A

4.0A

3.0A

2.0A

1.0A

0A

-1.0A

-2.0A

-3.0A

-4.0A

-5.0A
5.00us 5.08us 5.16us 5.24us 5.32us 5.40us
I(FWD)
Time

Evaluation circuit

L2
1 2
1.35uH
U3
D1MBH05D-120_P

IC = 5
1500uH
FWD 2 1
C L1 VCE
200

Rg U1 U2
1MBH05D-120 D1MBH05D-120_P
V1 = -15
V2 = 15 33
TD = 5u V1
TR = 10n
TF = 10n
PW = 4.998u
PER = 100u

0

Test condition: VCC=200 (V), IC=5 (A), -di/dt=100A/usec.

Parameter Unit Measurement Simulation %Error
trr nsec 77.000 76.846 -0.20
Irr A 3.700 3.675 -0.67

All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

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SPICE MODEL of 1MBH05D-120 (Professional+FWDP Model) in SPICE PARK

1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: 1MBH05D-120 MANUFACTURER: Fuji Electric *REMARK: Free-Wheeling Diode (Professional Model) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

2. Transfer Characteristics Circuit Simulation result 14A 12A 10A 8A 6A 4A 2A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit U1 U2 1MBH05D-120 D1MBH05D-120_P VCE 5Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

3. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 0.350 8.000 8.082 1.02 6.600 10.000 9.970 -0.30 13.400 12.000 12.037 0.31 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

4. Fall Time Characteristics Circuit Simulation result 5.0A 4.5A 4.0A 3.5A 3.0A 2.5A 2.0A 1.5A 1.0A 0.5A 0A 2.0us 3.0us 4.0us 5.0us 6.0us I(RL) Time Evaluation circuit RL Rg U1 U2 119.5 1MBH05D-120 D1MBH05D-120_P V1 = -15 V2 = 15 33 TD = 0 V1 TR = 10n VCE TF = 10n 600Vdc PW = 3u PER = 20u 0 Test condition: IC=5 (A), VCC=600 (V) Parameter Unit Measurement Simulation %Error tf us 0.250 0.252 0.78 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

5. Gate Charge Characteristics Circuit Simulation result 25V 20V 15V 10V 5V 0V 0 20n 40n 60n 80n 100n V(W1:1) Time*1mA Evaluation circuit V2 0 U1 U2 I1 1MBH05D-120 D2 D1MBH05D-120_P Dbreak 5 I1 = 0 W1 I2 = 1m + TF = 10n V3 TR = 10n - TD = 0 I2 W PER = 500m IOFF = 100uA 600 PW = 5m ION = 0A 0 Test condition: VCC=600 (V), IC=5 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 12.000 12.000 0.00 Qgc nc 26.000 25.565 -1.67 Qg nc 55.000 55.822 1.49 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

6. Saturation Characteristics Circuit Simulation result 10A 8A 6A 4A 2A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V I(IC) V(IC:-) Evaluation circuit U1 U2 1MBH05D-120 D1MBH05D-120_P IC 0Adc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

7. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VCE (V) Ic(A) %Error Measurement Simulation 2.0 2.000 2.01 0.35 4.0 2.430 2.41 -0.71 6.0 2.800 2.81 0.35 8.0 3.200 3.20 0.12 10.0 3.600 3.60 -0.09 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

8. Output Characteristics Circuit Simulation result 20V 15V 12V 10A 8A 10V 6A 4A 2A VGE=8V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(U1:C) V_VCE Evaluation circuit U1 U2 VCE 1MBH05D-120 5Vdc D1MBH05D-120_P 15Vdc VGE 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

9. FWD Forward Current Characteristics Circuit Simulation result 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 1.0V 2.0V 3.0V 4.0V I(Vsense) V(EC) Evaluation circuit Vsense EC V1 0Vdc V2 U2 0Vdc D1MBH05D-120_P U1 1MBH05D-120 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

10. Comparison Graph Simulation result Comparison table VF (V) IF(A) %Error Measurement Simulation 0.4 1.450 1.485 2.41 1 1.800 1.786 -0.77 2 2.100 2.094 -0.31 3 2.350 2.330 -0.86 4 2.550 2.537 -0.52 5 2.700 2.728 1.02 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

11. Reverse Recovery Characteristics Circuit Simulation result 6.0A 5.0A 4.0A 3.0A 2.0A 1.0A 0A -1.0A -2.0A -3.0A -4.0A -5.0A 5.00us 5.08us 5.16us 5.24us 5.32us 5.40us I(FWD) Time Evaluation circuit L2 1 2 1.35uH U3 D1MBH05D-120_P IC = 5 1500uH FWD 2 1 C L1 VCE 200 Rg U1 U2 1MBH05D-120 D1MBH05D-120_P V1 = -15 V2 = 15 33 TD = 5u V1 TR = 10n TF = 10n PW = 4.998u PER = 100u 0 Test condition: VCC=200 (V), IC=5 (A), -di/dt=100A/usec. Parameter Unit Measurement Simulation %Error trr nsec 77.000 76.846 -0.20 Irr A 3.700 3.675 -0.67 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

SPICE MODEL of 1MBH05D-120 (Professional+FWDP Model) in SPICE PARK

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