Two n-channel MOSFET devices have made almost identical, except for the oxide thickness. The first transistor has an oxide layer twice thicker than the second one. Explain: a. Which one has higher current in the saturation mode (assuming the same VGS and same VDS)? b. Which one has higher threshold voltage? c. Which one can operate at higher frequencies? d. Which one would dissipate less heat when the device is used in a CMOS circuit? Solution . A. layer having lesser thickness will having more current B. layer having lesser thickness will having lesser voltage C. layer having lesser thickness will having lesser frequency d. layer having more thickness will dissipate more heat when used in CMOS circuit.

1. Two n-channel MOSFET devices have made almost identical, except for the oxide thickness.
The first transistor has an oxide layer twice thicker than the second one. Explain: a. Which one
has higher current in the saturation mode (assuming the same VGS and same VDS)? b. Which
one has higher threshold voltage? c. Which one can operate at higher frequencies? d. Which one
would dissipate less heat when the device is used in a CMOS circuit?
Solution
. A. layer having lesser thickness will having more current
B. layer having lesser thickness will having lesser voltage
C. layer having lesser thickness will having lesser frequency
d. layer having more thickness will dissipate more heat when used in CMOS circuit