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DATA PACK
Seoul Semiconductor
March, 2021
SZDR5A0D
(660nm RED)
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Introduction
SZDR5A0D Data Pack Rev 1.0
01
Specification summary
03
Roadmap
02
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01
Introduction
Performance
Product Portfolio of 660nm RED
Comparison of SSC and O**
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Introduction (660nm RED)
Size: 3.5 x 3.5
Thickness: 2.3 mm
Features & Benefits
 Binning (Tj=25℃, 350mA condition)
 Enhanced High Luminous Flux (5%↑ than SZDR5A0C)
 Excellent performance in sulfur test
LM80
 LM80 : End of July. ~ 6Khr
Tj=25℃
LMP 660nm
Power [W] 0.71
Current [mA] 350
VF [V] 2.05
Radiant Power [mW]
500
( estimated typical )
PPF 2.73
SZDR5A0D
Electrical Optical Characteristics
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Comparison of SSC and O**
“SSC”
Z5D
“O”
GH 3.24
Radiant
Power
(mW)
420
460
440
480
500
520
580
540
J33
SZDR5A0D
J34
J41
“O”
GH 4.24
V5
V7
V4
J24
J31
SZDR5A0C
J32
@ 350mA Tj=25 °C
V6
V7
V9
V6
V8
J33
Typical
Typical
“SSC”
Z5C
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Product Portfolio of 660nm RED
40%
60%
80%
100%
120%
140%
430 450 470 490 510 530
Relative
$/mW
Radiant Power (mW)
350mA Tj=25 °C
“O”
Highest Radiant power & high reliability & robustness
We need to find the position of Z5D regarding price and direction
“O”
“SSC”
“SSC”
“O” New One
MP : April
“SSC”
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02 Roadmap
& LM80
Z5C, Z5D LM80 new plan
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Z5D Roadmap
Z5B 800mW
Z5C 890mW ( 11% )
Z5D 950mW ( 19% )
Z5D 1000mW ( 25% )
Z5D 1050mW ( 31% )
Q1 2021
Q2 2021
Q3 2021
Q4 2021
420mW @ 350mA
500mW @ 350mA
520mW @ 350mA
470mW @ 350mA
540mW @ 350mA
SSC Product Roadmap
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Z5D LM80 Plan
Q90 >36,000hr
Products Test time 55℃ 85℃ 105℃ Current
Z5B
(Z5C)
6khr
350mA
Reported
6Khr >36000
6Khr 26000
9khr
700mA
Reported
9Khr 21000
9Khr 22000
Z5C
6khr
350mA
( June, 2021 )
6Khr
>36000
(old data)
6Khr
26000
(old data)
6khr
700mA
( June, 2021 )
6Khr
21000
(old data)
6Khr
22000
(old data)
NEW
Z5D
6khr
500mA
( July, 2021 )
700mA
( October, 2021 )
6Khr
6Khr
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03 Specifications
Characteristics
Radiant Power Rank Distribution
Mechanical Dimensions
Recommended Solder Pad
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Specifications
Characteristics
Parameter Symbol
Value
Unit
Min. Typ. Max.
Radiant Power [1] - 500 - mW
Peak Wavelength λp 646 657 667 nm
PPF Φp - 2.73 - µmol/s
PPE KP - 3.81 - µmol/J
Forward Voltage (@350mA) [3] VF - 2.05 - V
Thermal resistance (J to S) RθJ-S - 3.0 - K/W
ESD Sensitivity(HBM) Class 3B
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Specifications
Radiant Power Rank Distribution
Bin Code
Radiant Power (mW)
@ IF = 350mA
Peak Wavelength (nm)
@ IF = 350mA
Forward Voltage (V)
@ IF = 350mA
J3, J4 RR5 C, D
Radiant Power (mW)
@ IF = 350mA
Bin Code Min. Max.
J33 480 500
J34 500 520
J41 520 540
Peak Wavelength (nm)
@ IF = 350mA
Bin Code Min. Max.
RR5 646 667
Forward Voltage (V)
@ IF = 350mA
Bin Code Min. Max.
C 1.75 2.1
D 2.1 2.2
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Specifications
Mechanical Dimensions Recommended Solder Pad
Same PAD as O*** Company

SZDR5A0D

  • 1.
    www.seoulsemicon.com Copyright ⓒ SeoulSemiconductor Co., Ltd. 1 DATA PACK Seoul Semiconductor March, 2021 SZDR5A0D (660nm RED)
  • 2.
    www.seoulsemicon.com Copyright ⓒ SeoulSemiconductor Co., Ltd. 2 Introduction SZDR5A0D Data Pack Rev 1.0 01 Specification summary 03 Roadmap 02
  • 3.
    www.seoulsemicon.com Copyright ⓒ SeoulSemiconductor Co., Ltd. 3 01 Introduction Performance Product Portfolio of 660nm RED Comparison of SSC and O**
  • 4.
    www.seoulsemicon.com Copyright ⓒ SeoulSemiconductor Co., Ltd. 4 Introduction (660nm RED) Size: 3.5 x 3.5 Thickness: 2.3 mm Features & Benefits  Binning (Tj=25℃, 350mA condition)  Enhanced High Luminous Flux (5%↑ than SZDR5A0C)  Excellent performance in sulfur test LM80  LM80 : End of July. ~ 6Khr Tj=25℃ LMP 660nm Power [W] 0.71 Current [mA] 350 VF [V] 2.05 Radiant Power [mW] 500 ( estimated typical ) PPF 2.73 SZDR5A0D Electrical Optical Characteristics
  • 5.
    www.seoulsemicon.com Copyright ⓒ SeoulSemiconductor Co., Ltd. 5 Comparison of SSC and O** “SSC” Z5D “O” GH 3.24 Radiant Power (mW) 420 460 440 480 500 520 580 540 J33 SZDR5A0D J34 J41 “O” GH 4.24 V5 V7 V4 J24 J31 SZDR5A0C J32 @ 350mA Tj=25 °C V6 V7 V9 V6 V8 J33 Typical Typical “SSC” Z5C
  • 6.
    www.seoulsemicon.com Copyright ⓒ SeoulSemiconductor Co., Ltd. 6 Product Portfolio of 660nm RED 40% 60% 80% 100% 120% 140% 430 450 470 490 510 530 Relative $/mW Radiant Power (mW) 350mA Tj=25 °C “O” Highest Radiant power & high reliability & robustness We need to find the position of Z5D regarding price and direction “O” “SSC” “SSC” “O” New One MP : April “SSC”
  • 7.
    www.seoulsemicon.com Copyright ⓒ SeoulSemiconductor Co., Ltd. 7 02 Roadmap & LM80 Z5C, Z5D LM80 new plan
  • 8.
    www.seoulsemicon.com Copyright ⓒ SeoulSemiconductor Co., Ltd. 8 Z5D Roadmap Z5B 800mW Z5C 890mW ( 11% ) Z5D 950mW ( 19% ) Z5D 1000mW ( 25% ) Z5D 1050mW ( 31% ) Q1 2021 Q2 2021 Q3 2021 Q4 2021 420mW @ 350mA 500mW @ 350mA 520mW @ 350mA 470mW @ 350mA 540mW @ 350mA SSC Product Roadmap
  • 9.
    www.seoulsemicon.com Copyright ⓒ SeoulSemiconductor Co., Ltd. 9 Z5D LM80 Plan Q90 >36,000hr Products Test time 55℃ 85℃ 105℃ Current Z5B (Z5C) 6khr 350mA Reported 6Khr >36000 6Khr 26000 9khr 700mA Reported 9Khr 21000 9Khr 22000 Z5C 6khr 350mA ( June, 2021 ) 6Khr >36000 (old data) 6Khr 26000 (old data) 6khr 700mA ( June, 2021 ) 6Khr 21000 (old data) 6Khr 22000 (old data) NEW Z5D 6khr 500mA ( July, 2021 ) 700mA ( October, 2021 ) 6Khr 6Khr
  • 10.
    www.seoulsemicon.com Copyright ⓒ SeoulSemiconductor Co., Ltd. 10 03 Specifications Characteristics Radiant Power Rank Distribution Mechanical Dimensions Recommended Solder Pad
  • 11.
    www.seoulsemicon.com Copyright ⓒ SeoulSemiconductor Co., Ltd. 11 Specifications Characteristics Parameter Symbol Value Unit Min. Typ. Max. Radiant Power [1] - 500 - mW Peak Wavelength λp 646 657 667 nm PPF Φp - 2.73 - µmol/s PPE KP - 3.81 - µmol/J Forward Voltage (@350mA) [3] VF - 2.05 - V Thermal resistance (J to S) RθJ-S - 3.0 - K/W ESD Sensitivity(HBM) Class 3B
  • 12.
    www.seoulsemicon.com Copyright ⓒ SeoulSemiconductor Co., Ltd. 12 Specifications Radiant Power Rank Distribution Bin Code Radiant Power (mW) @ IF = 350mA Peak Wavelength (nm) @ IF = 350mA Forward Voltage (V) @ IF = 350mA J3, J4 RR5 C, D Radiant Power (mW) @ IF = 350mA Bin Code Min. Max. J33 480 500 J34 500 520 J41 520 540 Peak Wavelength (nm) @ IF = 350mA Bin Code Min. Max. RR5 646 667 Forward Voltage (V) @ IF = 350mA Bin Code Min. Max. C 1.75 2.1 D 2.1 2.2
  • 13.
    www.seoulsemicon.com Copyright ⓒ SeoulSemiconductor Co., Ltd. 13 Specifications Mechanical Dimensions Recommended Solder Pad Same PAD as O*** Company

Editor's Notes

  • #6 This is the flux rank table compared with competitors especially for high end market. Main rank of Y22 is W6 and W7 with typ. 171lm/W at 4000K and 85℃ which is higher than competitors. And also we are developing Z5M4 which can deliver the highest performance.
  • #7 This is our product portfolio of high power especially ceramic and Wicop. In this graph, the blue color products are ours and the black color products are from competitors. Mainly there are two kind of market, one is high end market requested high performance and reliability even though the price is expensive and the other one is low end market requested cost competitiveness. For the low end market, we can offer our Z5M3 as competitive lm/W with cost competitiveness. And also we can offer our Y19 used Wicop technology. For the high end market, we can offer our Y22 series and Z5M4 with world best lm/W with high reliability. Z5M4 will be developed by the end of February this year. For Y22 and Y19, we can offer our Wicop with Lens solution. For Y22P and Y22T, it’s an option for conventional lens application. For Z5M3 and Z5M4, it’s conventional 3535 solution.
  • #9 This is the flux rank table compared with competitors especially for high end market. Main rank of Y22 is W6 and W7 with typ. 171lm/W at 4000K and 85℃ which is higher than competitors. And also we are developing Z5M4 which can deliver the highest performance.
  • #10 This is the flux rank table compared with competitors especially for high end market. Main rank of Y22 is W6 and W7 with typ. 171lm/W at 4000K and 85℃ which is higher than competitors. And also we are developing Z5M4 which can deliver the highest performance.