We,MEIDEN NANOPROCESS INNOVATIONS, INC. (NPI), supports the development of new Pure Ozone applications, such as room temperature film deposition and surface modification technology"OER". Our innovations are based on patented Pure Ozone technology, which has been cultivate by the MEIDEN Group over 20 years in Japan. At NPI, we strive to create an environment that encourages partnerships with clients and businesses. NPI is committed to meeting the world’s ever-evolving technological demands, e.g. lowering process temperatures for the manufacture of semiconductor devices and other materials such as films and lenses.

1. Copyright © MEIDEN NANOPROCESS INNOVATIONS, INC. All Rights Reserved.
Introduction of Pure ozone &
related processes
MEIDEN NANOPROCESS INNOVATIONS, INC.
April.2023

2. Company profile
Company MEIDEN NANOPROCESS INNOVATIONS, INC.
Founded 2020.4.1
Representative CEO：Mr.Takada Hisashi
Located  Head office
2-8-1,Osaki,Shinagawa-ku,T
okyo,
141-0032,Japan
TEL：81-3-6420-8630
> Development&Factory
1569-9,Kotehashicho,Hanamigawa-
ku,Chiba,262-0013
TEL：81-43-258-1633
Capital 400 Million Yen（Meidensha 100% Founded）
Employee 23
Business Development,design,manufacture and sales of
Pure Ozone Generator and room tempurture
deposition equipment
Development Factory in Chiba
Chiba
Tokyo
Parents company

3. Various Applications of Pure Ozone
Pure
Ozone
In-situ
Cleaning
Surface
reforming
Oxidation
Source
MBE
Ashing
Our core value is
High concentrate ozone and
Purity ozone
(Patented technology)
ALD

4. Fields our offerings would be fit
④Nanoimprint （Mask-less lithography)
②Laser, THz device, power electronics
①Quantum computing、AI（Beyond CMOS） ③Solar, LED device
Platform for Various (Layered) Oxides growth Defect, impurity-free, nm-level smooth interface
Thermal, photo, NOx damage-free
Low gas consumption, high reaction efficiency
*Source
1) nextBIGfuture.com
2) Journal of Energy & Environmental Science
3) Global net Corp. Homepage
4) Journal of Advanced Healthcare Materials
⑤Sensor, IOT, flexible device
Long-lasting super-
hydrophilic surface
Long lifetime, storable ozone
Low temperature
Shadow-free chemical process

5. USA：R&D in
cutting edge
material research
Universities
MBE (Oxidation source for epitaxial oxide film growth)
ALD (thin oxide film growth)
UK：Applying for R&D
funding budget
Finland: Under PoC with
an ALD equipment
company
France and Germany
Starting collaboration
with MBE equipment
companies
OER (surface cleaning)
Australia：
Under PoC
with a research
Institute
Taiwan：
device evaluation
with LED
companies started
Japan:
Variety of PoC’s
with end-users
USA：
Under negotiation with an
ALD equipment company
China： Many POGs
delivered to semiconductor
factories through high-tech
process machinery
equipment manufacturer
Global expansion of our Pure Ozone technology
End-user Business tie-up
USA：
Under joint market
development with an
MBE equipment
company

6. POG
(Pure Ozone Gas
Generator)
Surface cleaning
(activation)
equipment
More than 50 units
operating in mass-
production line worldwide
Our Offering
Used in R&D application

7. Principal for POG and
Oxidation source for ALD

8. CONFIDENTIAL
 Our POG condenses ozone to ≓ 100% purity, which is stored as liquid using cryogenic freezers.
The pure ozone can be delivered as a continuous supply of process gas during CVD, ALD, MBE
or industrial materials fabrication where nitrogen or other constituents can create defects.
Basics of Pure Ozone Generator (POG)
100％
Liquid
Ozone
cl cl
op cl
cl
op Vacuum
Pump
Continuous Supply
of
Pure Ozone Gas
Standb
y
Feed
Charge
cl
cl
Chiller
Ozonizer
op
Oxygen
Cylinder
Chiller Chiller
op
op
Key:
■OP: Open
■CL : Closed

9. 1) Keep a liquid O3 vessel at low temperature (90K) and low pressure (<0.1atm)
when liquid O3 is stored
2) Prevent metal/organic particle, transient gas, energy & light inflow into the
vessel
Mechanical
- Sensing and protection against large-
scale vibration such as earthquake
- Inline fine-pore size ceramic filter
- Housing exhaust
- Pressure-proof enclosure design for
explosive decomposition of liquid O3
Electrical
-Safe & built-in programmed exhaust
of liquid O3 in case of power failure
-Early abnormal detection by a
combination of sensors
- Compliant to SEMI-S2
-Maximum storable liquid O3 limited
Basic concept
Operational
- Fully automated operation
- Safety Interlocks arranged
- Selectable from multiple operational
modes for adjusting to user
experience & request
SEMI-S2
Certificated!
Safety handling of large amount of liquid ozone
Chemical
- Catalytic ozone decomposer
installed
- Ozone gas leakage detection in the
housing (0.06-0.7ppm)

10. 【For ALD①】On-demand supply and Eco-friendly Process
Evacuation
ALD
chamber
Pulse O3+O2
Our Proposal
OZ-ALD
>90% of generated O3 gas has to
be discarded because of <10% O3
ALD pulse duty and unstable O3
concentration when interrupting
POG – ALD
Generated pure O3 gas is
utilized without loss thanks
to a long lifetime of pure O3
(>10min)
Exhaust System
Ozone Destroyer
Ozonizer
N.O.
Constant heavy duty
N2(Ar)
Conventional
10,000Pa
90% O3
Evacuation
ALD
chamber
Pulse pure O3
Exhaust System
Ozone Destroyer
No need
N2(Ar)
Ozone
Destroyer
Inside No need

11. 【Using POG for ALD(e.g.)】
11cc×2 (Liquid @90K)
16,000cc (in Standard state gas)
ALD valve
Pump
ALD chamber 1
Pump
Pump
Pump
ALD chamber 4
ALD chamber 3
ALD chamber 2
500cc
(1/2inch 10m）
Buffer tank
(e.g., 4,000cc)
Pump
10,000Pa (75Torr)
1/2inch : <10m
Stainless steel electro-
polished 316L pipe
1) Pure Ozone generator unit 2) Supply distribution unit
Communication
I/O, analog, digital signal
I/O(ready), analog, digital signal (status)
CPU
CPU
【For ALD②】PLUG&PLAY VERSATILE ozone gas Platform
3) Your ALD unit
Introduce just one optimized POG unit for your multiple ALD systems
Piezo valve (Pressure controller)
12,000Pa
10cc/pulse, 4 pulses/min
50cc/pulse, 2 pulses/min

12. 【For ALD③】Typical working Pattern
Time
Ozone pressure
at the buffer tank
Requested
Pressure (e.g.,
60Torr=8,000Pa)
Ready
(Charged with a requested pressure,
No alarm issued on POG and ALD1-4 )
Alarm
- O3 concentration decrease in the buffer
- System failure from POG (20 kinds of
abnormal state automatically detected)
- System failure from ALD(1-4)
Supply to ALD1
(ALD valve open) ALD2 ALD3 and 4
Ozone gas charged
2sec 4sec 5sec (overlap 1sec)
10cc 20cc 50cc
Ozone pressure at ALD valve inlet is kept constant at any ALD pulse request

13. 【For ALD④】Long lifetime of Pure Ozone
Pure Ozone
generator unit
Pressure Gauge
Vacuum Pump
Half Inch SUS316L EP-grade
2m plug
Supersonic O3
concentration
monitor
50
55
60
65
70
75
80
85
90
95
100
0 10 20 30 40 50 60
O3
concentration[%]
Time[min]
test10-1 10,000Pa-2m-1
test10-2 10,000Pa-2m-2℃
test10-3 10,000Pa-4m(2m-1+2)
80% O3 concentration
- Initial charged O3 Pressure 10,000Pa
- Surrounding temperature: 25C
- Initial O3 concentration: 92% (measured with a
supersonic O3 concentration monitor)
- Piping: Electrochemically polished SUS316L (4m)
with two metal diaphragm valves (material: Body:
SUS316L, Diaphragm: SUS631)
Valve
Measurement Conditions
Guideline for >10min storage
Test Run 1
Test Run 2
Test Run 3
80% lower limit line
Length 2m
- Temperature: <40C (<30 C recommended)
- No welding-originated surface defects such as pit, cracking,
undercut and overlap
- Piping for gas transfer: SUS316L with electrochemically
polished grade (Rz <0.7m)
- Gas control Valve: diaphragm type, SUS316L, PTFE
(Polytetrafluoroethylene) and PFA (Perfluoroalkoxy alkanes)
with surface roughness (Rz) of <0.7m
- Maximum piping length:15m (<10m recommended)

14. 【For ALD⑤】Running Cost Comparison
Electricity Gas Ozone Exhaust
Not only the On-demand supply property but also throughput &
Productivity increase of ALD film brought about by pure O3 compared to
conventional O3 serves to reduce the running cost of total ALD system
Cost/nm ALD film growth
Pure Ozone
Conventional Ozone
POG takes care of all the unused O3 gas in
the ozone supply line down to the ALD valve
On-demand supply
and long life time of O3
（image)

15. Deposition data for ALD application as Oxidation source
SiO2 TiO2 Al2O3
Deposition
temperature
<150℃
Film growth rate
（on Φ200 Si wafer）
30nm(25 wafers)<2Hr
100nm ＜6Hr
30nm (25 wafers)<6Hr
100nm ＜18Hr
30nm (25 wafers)<5Hr
100nm ＜17Hr
Uniformity ±1％
Coverage for 40:1
trench bottom
>95% >88% >82％
Water vapor
transmission
－ －
< 10-5
ｇ/ｍ2
/day
SiO2/Al2O3 alternate Layer
Refrectivity@120C 1.51 2.23 1.57
120μm
3μm
Good Step coverage Layered film with sharp & smooth interface
SiO2
TiO2
SiO2
TiO2
SiO2

16. Copyright © MEIDEN NANOPROCESS INNOVATIONS, INC. All Rights Reserved.
Sharp interface
200nm
ALD film growth on glass
SiO2
TiO2
SiO2
TiO2
SiO2
C impurity
free
Glass (SiO2) substrate

17. Copyright © MEIDEN NANOPROCESS INNOVATIONS, INC. All Rights Reserved.
ALD film growth on Resist
Ra：0.2 Ra：0.2
■ Surface roughness of resist (i-line) after ALD
Oxidation Source：Pure Ozone（PO)
Precursor ：3DMAS（Air Liquid）SiO2 film
After SiO2 film 50nm deposition
Resist surface
Surface roughness of resist and after SiO2 deposition
O*
O3
Resist

18. ①Top ②Side ③Bottom
PO-ALD
temperature
60℃
step coverage
0.61
OZ-ALD
temperature
60℃
step coverage
0.42
①Top
②Side
③Bottom
87nm
53nm
53nm
300nm
300nm
52nm 22nm
22nm
300nm 300nm
300nm 300nm
3μm
120μm
■ Comparison of step coverage:high aspect trench（3μｍ/120μm） with conventional ozonizer
Oxidation Source：Pure Ozone（PO) / Convensional Ozonizer（OZ）
Precursor ：DMAI（Air Liquid）Al2O3 film
150% better step coverage
Superior Coverage (Underlying morphology independent process)

19. Copyright © MEIDEN NANOPROCESS INNOVATIONS, INC. All Rights Reserved.
19/13
■ Experimental
AIST Nano-Processing Facility：NPF
〇AD-100LP（Samco Inc.）
〇Sample ：Si〈100〉
〇Precursor ：trimethylaluminium（TMA）
〇Plasma Input Power：100~250W
〇Ozone concentraiton：
Ozonizer O3 < 180g/m3(<8%)
PO > 1,700g/cm3(>80%)
〇Deposition temperature：50～300℃
ALD oxide reactants
H2O （TH-ALD）
O2 direct plasma（DPE-ALD)
O2 remote plasma
O3
Pure O3 （PO-ALD）
source：https://www.tia-kyoyo.jp/object.php?f=1&code=198
https://www.tia-kyoyo.jp/object.php?f=1&code=204
POG
■ Deposition conditions
・Evaluation of Al2O3 film of about 50 nm on a Si wafer at each film formation temperature and oxidizing gas。
・Only the reactant supply time was changed with other process parameters being kept constant.
TMA Supply Purge Reactant Supply Purge
TH-ALD
0.02sec 3sec
3sec 7sec
DPE-ALD 3sec 7sec
Ozonizer O3-ALD 1sec 6sec
PO-ALD 3sec 14sec
Table 2 ALD process step
ALD
Appendix -Comparison of reactants of Al2O3 film using TMA-

20. Copyright © MEIDEN NANOPROCESS INNOVATIONS, INC. All Rights Reserved.
■ Comparison of GPC for each oxide reactant
The temperature dependence of GPC changes depending on Reactant source.
Fig. Schematic of possible behavior for the ALD growth
per cycle versus temperature showing the “ALD” window[1]
[1] Guang-Jie Yuan et al, Coatings,9,806(2019)
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0 100 200 300
Growth
per
cycle[nm/cycle]
Temperature[℃]
PO-ALD H2O-ALD
DPE-ALD OzonizerO3_ALD
Condensation limited
（PO、DPE）
ALD Window
Activation
energy/steric
Hindrance limited
（H2O,Ozonizer O3）
Fig. GPC temperature dependence of each reactant
(O3 >80%)
OzonizerO3 (O3 <8%)
Appendix -Comparison of reactants of Al2O3 film using TMA-

21. Copyright © MEIDEN NANOPROCESS INNOVATIONS, INC. All Rights Reserved.
■ Comparison of GPC and refractive index for each oxide reactant
・Different oxidation sources change the refractive index.
・It is estimated that the refractive index changes (film density change) due to the difference in reactivity between TMA and the reactant.
1.56
1.57
1.58
1.59
1.60
1.61
1.62
1.63
1.64
1.65
1.66
0 50 100 150 200 250 300 350
Refractive
index＠633nm
Temperature[℃]
TH-ALD
DPE-ALD
PO-ALD
Fig. Al2O3 film refractive index＠633nm
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0 100 200 300
Growth
per
cycle[nm/cycle]
Temperature[℃]
PO-ALD H2O-ALD
DPE-ALD OzonizerO3_ALD
Condensation limited
（PO、DPE）
ALD Window
Activation
energy/steric
Hindrance limited
（H2O,Ozonizer O3）
Fig. GPC temperature dependence of each reactant
(O3 >80%)
OzonizerO3 (O3 <8%)
Appendix -Comparison of reactants of Al2O3 film using TMA-

22. Copyright © MEIDEN NANOPROCESS INNOVATIONS, INC. All Rights Reserved.
■ Step coverage
Fig. Cross-sectional SEM image of a trench wafer
A.R.
56
A.R.
40
A.R.
20 A.R.
9
A.R.
6
200nm
200nm
Thickness on trench surface
Thickness on trench bottom
49.0nm
A.R.56 Step coverage =0.98
(48.0nm/49.0nm)
48.0nm
0.00
0.20
0.40
0.60
0.80
1.00
1.20
0 100 200 300 400
Step
coverage
A.R.56(bottom/surface)
Temperature[℃]
PO
DPE(100W)
DPE(250W)
〈O2Plasma-ALD〉
TMA O3 O2
〈PO-ALD〉
O*
Appendix -Comparison of reactants of Al2O3 film using TMA-

23. Copyright © MEIDEN NANOPROCESS INNOVATIONS, INC. All Rights Reserved.
■ Step coverage(Aspect ratio 100~）
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 200 400 600
Step
coverage
Aspect ratio (distance from opening / gap)
PO-ALD
RPE-600W [1]
2
Fig. Coverage performance explained by
recombination probability of O on oxides[2]
[2] Guang-Jie Yuan et al, J. Phys. Chem. ,123,27030−27035(2019)
Oxidation Source ：Pure Ozone（PO)
Precursor ：TMA Al2O3 film(200℃)
Sample : Side trench(Aspect ratio ~10,000)
w(opening) and h(gap) :500nm
Appendix -Comparison of reactants of Al2O3 film using TMA-
By using pure ozone as the oxidation source,
coverage of 70% or more is obtained at an aspect ratio of 400.

24. Other applications with OER
(Ozone-Ethylene Radical Generation) Process

25. OER (Ozone Ethylene Radical Generation) process
Developed OER (Ozone Ethylene Radical) process to generate OH,O,H radicals
effectively at lower than 100ºC and applies OER to actual processes.

26. Application for OER(Surface reforming)
■Applicable substrate
Glass
Blue plate glass
Eagel XG glass
Film
PET
PEN
COP
Polyimide
SUS（SUS316）
Aluminium（A5052）
Gold,Cupper
Silicone
PDMS
Silicone
Fiber
Non-waven fabric
Carbon fiber
Resin
PMMA（acrylic resin）
heatproof
temperature≒600℃
heatproof
temperature ≒150℃
heatproof
temperature ≒90℃
heatproof temperature
≒ 100℃
Metal
heatproof
temperature≒150℃
heatproof
temperature≒150℃(Al)
plating
process
coating
process
OER process
(Pletreatment)
Bonding deposition
Application
Printing

27. Surface reforming(OER process)
Non-alkali glass
Untreated
OER
process
O2 plasma
33.7° 5.2° 6.8°
■water contact angle
■Surface
roughness
0.21 0.22
0.56
未処理 ＯＥＲ改質 O2プラズマ
Surmace roughness
sq（RMS）
No surface damage due to
OER process!
■Feature
LCD panel
Glass
application
Transfer
process
semicondu
ctor
■Change over time（At clean room/20℃/50％）
◆ Achieves a water contact angle of less than 10 °
◆ Maintains smoothness without surface damage
◆ Ideal for applications that require smoothness
Untreated OER process O2 plasma
Untreated OER process O2 plasma
Super hydrophilic surface state continues for 3 days

28. Pretreatment for Bonding
*OER：Ozone-Ｅthylene Ｒadical generation technology
■Bonding for semiconductor(W-W,D-W)
Substrate
OH radical
Ethylene（C₂H₄）
Pure Ozone（O₃）
OH
OH
OH
OH
OH
OH
OH
OH
OER
Substrate
OH OH OH OH
OH OH OH OH
Bonding
Substrate
Annealing
OER required for bonding pretreatment:
－ Generation of optimal OH radical amount
－ No substrate damage due to chemical
reaction by OER. Maintain smoothness
compare with Plasma treatment.

29. In-situ mask/reticle optics cleaning
Electron beam mask writer
O source
(Pure Ozone Gas)
Customer’s Satisfactions
6. Highly compatible with low pressure processes, 1. High Concentration (highly oxidation),
3. Damage free (no reflectivity change of mirror surface ), 2. High Purity (NOx free, no
corrosion), 4. High Efficiency (minimize pre-decomposition of ozone after 20 meter transfer),
8. Capability of 24/7/365 mass production
In-situ cleaning
exhaust of carbon contamination
and
gas