This document provides information about the IRF3710Z N-Channel MOSFET transistor from INCHANGE Semiconductor. Some key specifications of the transistor include a maximum static drain-source on-resistance of 18mΩ, enhancement mode operation, fast switching speed, and ability to withstand 100% avalanche testing. The transistor is described as being reliable for use in a wide variety of applications. Maximum ratings and thermal/electrical characteristics of the device are also listed.