The document provides product specifications for the INCHANGE Semiconductor isc 7N65 N-Channel MOSFET transistor. It lists key features such as a drain current of 7A, drain-source voltage rating of 650V, and on-resistance of 1.35 ohms or less. The MOSFET is suitable for applications such as power supplies, motor controls, and DC-DC converters due to its fast switching and high efficiency. Absolute maximum ratings and electrical characteristics are also provided.

1. INCHANGE Semiconductor isc Product Specification
isc website：
：
：
：www.iscsemi.com isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor 7N65
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·FEATURES
·Drain Current ID= 7A@ TC=25℃
·Drain Source Voltage
: VDSS= 650V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.35Ω(Max) @VGS = 10 V
·Avalanche Energy Specified
·Fast Switching
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·APPLICATIONS
· High speed switching applications in power supplies
· PWM motor controls
· High efficient DC to DC converters and bridge circuits.
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·ABSOLUTE MAXIMUM RATINGS(Ta=25℃
℃
℃
℃)
SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 650 V
VGS Gate-Source Voltage-Continuous ±30 V
ID Drain Current-Continuous 7 A
IDM Drain Current-Single Plused 28 A
PD Total Dissipation @TC=25℃ 142 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature -55~150 ℃
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·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.88 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W

2. INCHANGE Semiconductor isc Product Specification
isc website：
：
：
：www.iscsemi.com isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor 7N65
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·ELECTRICAL CHARACTERISTICS
TC=25℃
℃
℃
℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 650 V
VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V
RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3.5A 1.35 Ω
IGSS Gate-Body Leakage Current VGS= ±30V; VDS= 0 ±100 nA
IDSS Zero Gate Voltage Drain Current VDS= 650V; VGS= 0 1 μA
VSD Forward On-Voltage IS= 7A; VGS= 0 1.4 V
Gfs Forward Transconductance VDS= 40V；ID= 3.5A 8 S
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