* This is a slide-formed introduction to the virtual project, to be kept and updated in SlideShare at least during fall 2013.
* This is aimed for introducing the project in class, at conferences, …, and can be used by anyone interested
* You may download a copy of the file and use it in the way you want (e.g. remove the for-your-purpose unnecessary slides)
* If you see a need for change in the contents, please do not modify the contents yourself, but leave a comment to the file in Slideshare in the Comments section after this slide we can make and upload an improved version.
* When there is new significant info that should be made available in this presentation, this slide set will be updated and re-loaded in SlideShare
* Please consider the date indicated the “version number”
History of ald riikka puurunen 15.11.2013 finalRiikka Puurunen
Invited seminar talk by R. L. Puurunen, November 15, 2013, Beneq and ETU (LETI) joint ALD laboratory opening seminar, St. Petersburg, Russia, title: History of ALD: from lab research to industrial applications
Presentation english eagle aurum companyluis castillo
The document consists of two lines that repeat "WATCH THE VIDEO" in all capital letters, suggesting it is urging or demanding the reader to watch a video. It does not provide any other context or details about the content of the video.
Publicize, promote and market your book with little or no marketing budgetTom Corson-Knowles
Most authors are so exhausted by the time they’ve finished their books – and often so strapped for cash – that they don’t know where to start a publicity and marketing campaign, especially with little or no budget. You don’t need a $20,000 publicist. Or a $5,000 assistant. If you have more time than money, you can do most of the publicity and marketing work yourself like a professional if you know what to do.
Everything you need to know about cloud computing, common characteristics, cloud computing services, cost saving, advantages, deployment models, migrations into cloud and safety and security.
Invited talk by R.L. Puurunen "Recent Progress in Analysis of the Conformality of Films by Atomic Layer Deposition" at AVS69, Portland, Oregon, Nov 5-10, 2023, https://avs69.avs.org/.
ABSTRACT. Conformality is a fundamental characteristic of atomic layer deposition (ALD) thin film growth technique. “Conformal” film refers to a film that covers all surfaces of a complex three-dimensional substrate with everywhere the same thickness and properties. ALD - invented independently by two groups in 1960s and 1970s - has since late 1990s been transformational in semiconductor technology. Apart from semiconductors, conformal ALD films find applications and interest in widely varied fields such as microelectromechanical systems, pharmaceutical powder processing, optical coatings, battery technologies and heterogeneous catalysts.
Conformality follows directly from the “ideal ALD” principles: growth of material through the use of repeated separate self-terminating (i.e., saturating and irreversible) gas-solid reactions of at least two compatible reactants on a solid surface. Obtaining conformality in practice is not self-evident, however. Reasons for deviation from conformality are multiple, ranging from mass transport limitations to slow reaction kinetics and various deviations from ideal ALD (e.g., by-product reactivity or a continuous chemical vapor deposition (CVD) component through reactant decomposition or insufficient purging). Incomplete conformality can also be intentional: a saturation profile inside a feature can be exposed, to enable an analysis of kinetic parameters of the reactions.
This invited talk will explore recent progress especially by the author and collaborators in understanding ALD conformality and kinetics, obtained via experiments and simulations. Experiments have been made with the recently commercialized (chipmetrics.com) silicon-based PillarHallTM lateral HAR test chips (channel height ~500 nm) and spherical mesoporous high-surface-area materials (average pore diameter ~10 nm, sphere diameter ~1 mm). Simulations are presented for 1d feature-scale models and optionally a recently developed 3d code for spheres. Two codes are available on GitHub: DReaM-ALD (diffusion-reaction model, DRM) and Machball (ballistic transport-reaction model, BTRM). Often it is assumed that diffusion during an ALD process in HAR features is by Knudsen diffusion and free molecular flow conditions prevail (Kn >>1). If so, a characteristic “fingerprint saturation profile” can be obtained, and the slope method (derived for DRM-ALD-Arts, GitHub) can be used to back-extract the lumped sticking coefficient. When diffusion is in the transition flow (Kn ~1) or continuum flow (Kn<<1), the shape of the saturation profile depends on process conditions and the slope method is not applicable.
Installation talk at Aalto University by Prof. Riikka PuurunenRiikka Puurunen
This document summarizes the history and development of atomic layer deposition (ALD) and its applications in catalysis. It discusses key milestones in ALD including early work in 1974 and patents in 1990. It also examines using ALD to engineer catalysts by depositing thin films on high surface area powders. Experimental results are presented on optimizing the location of zinc promoters deposited by ALD to improve methanol production from carbon dioxide hydrogenation.
History of ald riikka puurunen 15.11.2013 finalRiikka Puurunen
Invited seminar talk by R. L. Puurunen, November 15, 2013, Beneq and ETU (LETI) joint ALD laboratory opening seminar, St. Petersburg, Russia, title: History of ALD: from lab research to industrial applications
Presentation english eagle aurum companyluis castillo
The document consists of two lines that repeat "WATCH THE VIDEO" in all capital letters, suggesting it is urging or demanding the reader to watch a video. It does not provide any other context or details about the content of the video.
Publicize, promote and market your book with little or no marketing budgetTom Corson-Knowles
Most authors are so exhausted by the time they’ve finished their books – and often so strapped for cash – that they don’t know where to start a publicity and marketing campaign, especially with little or no budget. You don’t need a $20,000 publicist. Or a $5,000 assistant. If you have more time than money, you can do most of the publicity and marketing work yourself like a professional if you know what to do.
Everything you need to know about cloud computing, common characteristics, cloud computing services, cost saving, advantages, deployment models, migrations into cloud and safety and security.
Invited talk by R.L. Puurunen "Recent Progress in Analysis of the Conformality of Films by Atomic Layer Deposition" at AVS69, Portland, Oregon, Nov 5-10, 2023, https://avs69.avs.org/.
ABSTRACT. Conformality is a fundamental characteristic of atomic layer deposition (ALD) thin film growth technique. “Conformal” film refers to a film that covers all surfaces of a complex three-dimensional substrate with everywhere the same thickness and properties. ALD - invented independently by two groups in 1960s and 1970s - has since late 1990s been transformational in semiconductor technology. Apart from semiconductors, conformal ALD films find applications and interest in widely varied fields such as microelectromechanical systems, pharmaceutical powder processing, optical coatings, battery technologies and heterogeneous catalysts.
Conformality follows directly from the “ideal ALD” principles: growth of material through the use of repeated separate self-terminating (i.e., saturating and irreversible) gas-solid reactions of at least two compatible reactants on a solid surface. Obtaining conformality in practice is not self-evident, however. Reasons for deviation from conformality are multiple, ranging from mass transport limitations to slow reaction kinetics and various deviations from ideal ALD (e.g., by-product reactivity or a continuous chemical vapor deposition (CVD) component through reactant decomposition or insufficient purging). Incomplete conformality can also be intentional: a saturation profile inside a feature can be exposed, to enable an analysis of kinetic parameters of the reactions.
This invited talk will explore recent progress especially by the author and collaborators in understanding ALD conformality and kinetics, obtained via experiments and simulations. Experiments have been made with the recently commercialized (chipmetrics.com) silicon-based PillarHallTM lateral HAR test chips (channel height ~500 nm) and spherical mesoporous high-surface-area materials (average pore diameter ~10 nm, sphere diameter ~1 mm). Simulations are presented for 1d feature-scale models and optionally a recently developed 3d code for spheres. Two codes are available on GitHub: DReaM-ALD (diffusion-reaction model, DRM) and Machball (ballistic transport-reaction model, BTRM). Often it is assumed that diffusion during an ALD process in HAR features is by Knudsen diffusion and free molecular flow conditions prevail (Kn >>1). If so, a characteristic “fingerprint saturation profile” can be obtained, and the slope method (derived for DRM-ALD-Arts, GitHub) can be used to back-extract the lumped sticking coefficient. When diffusion is in the transition flow (Kn ~1) or continuum flow (Kn<<1), the shape of the saturation profile depends on process conditions and the slope method is not applicable.
Installation talk at Aalto University by Prof. Riikka PuurunenRiikka Puurunen
This document summarizes the history and development of atomic layer deposition (ALD) and its applications in catalysis. It discusses key milestones in ALD including early work in 1974 and patents in 1990. It also examines using ALD to engineer catalysts by depositing thin films on high surface area powders. Experimental results are presented on optimizing the location of zinc promoters deposited by ALD to improve methanol production from carbon dioxide hydrogenation.
Puurunen (on behalf of Järvilehto) oral presentation at ALD 2023 conferenceRiikka Puurunen
ALD 2023, Bellevue, Washington, July 2023
AUDIO: (see 1st page)
Title: Simulated Conformality of ALD Growth Inside Lateral HAR Channels: Comparison Between a Diffusion–Reaction Model and a Ballistic Transport–Reaction Model
Authors: Jänis Järvilehto,1 Jorge A. Velasco,1 Jihong Yim,1 Christine Gonsalves1 and Riikka L. Puurunen1
1Aalto University, School of Chemical Engineering, Department of Chemical and Metallurgical Engineering
Atomic layer deposition (ALD) is known for its ability to produce films of controllable thickness, even in narrow, high-aspect-ratio (HAR) structures [1]. These films can be highly conformal, meaning that the structure is covered by a film of uniform thickness [1,2]. However, when the structure’s aspect ratio is increased sufficiently, deposition becomes limited by the diffusion of the reactants into the deep end of the structure, potentially resulting in the formation of an adsorption front, followed by a region of lower coverage [3]. Theoretical models have been developed to predict film conformality in HAR structures, as reviewed in [2].
This work presents a comparison of a diffusion–reaction model (DRM) developed by Ylilammi et al. [4,5] (Model A) and a ballistic transport–reaction model (BTRM) by Yanguas-Gil and Elam [6,7] (Model B). For the comparison, saturation profiles were generated using both models with similar simulation parameters (Knudsen number Kn >> 1).
Qualitatively, both models produced similar trends in terms of half-coverage penetration depth and slope at half-coverage penetration depth. The saturation profiles were similar in shape, except for the film growth observed at the channel end in Model B. Quantitative examination yielded consistently higher half-coverage penetration depths in Model B. Model A produced steeper slopes at half-coverage penetration depth. In Model B, the discretization resolution was found to affect the penetration depth.
While the models gave qualitatively similar results, quantitatively extracted parameters differed. This finding is consistent with a previous comparison of a DRM and BTRM in the context of low pressure chemical vapor deposition [8]. The quantitative differences are relevant, for example, when the models are fitted to experimental data for the extraction of kinetic parameters, such as the sticking coefficient.
[1] J.R. van Ommen, A. Goulas, and R.L. Puurunen, “Atomic layer deposition,” in Kirk Othmer Encyclopedia of
Chemical Technology, John Wiley & Sons, Inc., 42 p, (2021).
[2] V. Cremers et al., Appl. Phys. Rev. 6 (2019) 021302.
[3] J. Yim and O.M.E. Ylivaara et al., Phys. Chem. Chem. Phys. 22 (2020) 23107-23120.
[4] M. Ylilammi et al., J. Appl. Phys. 123 (2018) 205301.
[5] J. Yim and E. Verkama et al., Phys. Chem. Chem. Phys. 24 (2022) 8645–8660.
[6] A. Yanguas-Gil and J.W. Elam, Theor. Chem. Acc. 133 (2014) 1465.
[7] A. Yanguas-Gil and J.W. Elam, (2013) ...
Puurunen invited talk at IUPAC|Chains2023, The Hague, Netherlands, Aug 20-25,...Riikka Puurunen
The document is a presentation on atomic layer deposition (ALD) given by Riikka Puurunen at the IUPAC|CHAINS2023 World Chemistry Congress. The presentation provides an introduction to ALD, including its history dating back to 1974 with its independent inventions in Finland and Russia. It discusses the fundamentals and typical process conditions of ALD as well as examples of its applications. The presentation emphasizes ALD's ability to conformally coat substrates and provides examples of Puurunen's own research on ALD catalyst synthesis and modeling ALD growth. It concludes by discussing opportunities for future ALD research and the importance of open science practices.
Slides of invited "ALD 101" tutorial by Puurunen at ALD 2021 Riikka Puurunen
(INVITED) Fundamentals of atomic layer deposition: an introduction (“ALD 101”)
Riikka L. Puurunen, Aalto University School of Chemical Engineering, Department of Chemical and Metallurgical Engineering, AVS 21st International Conference on Atomic Layer Deposition (ALD 2021), Virtual Meeting 27.6.-30.6.2021. Tutorial Session 27.6.2021
ABSTRACT: Atomic layer deposition (ALD) has become of global importance as a processing technology for example in semiconductor device fabrication, and its application areas are continuously expanding. The significance of ALD was highlighted e.g. by the recent (2018) Millennium Technology Prize. Tens of companies are offering ALD tools, and thousands of people are involved in ALD R&D globally. A continuous need exists to educate new people on the fundamentals of ALD.
While ALD for manufacturing may be regarded mature, as a scientific field, ALD—in the author’s view—is developing. For example, understanding of the early history of ALD is evolving, related to the two independent inventions of ALD under the names Atomic Layer Epitaxy in the 1970s and Molecular Layering in the 1960s [1-4]. Also, significantly varying views exist in the field related to the description and meaningfulness of even some core ALD concepts [5].
The purpose of this invited “ALD 101” tutorial is to familiarize a newcomer with fundamentals of ALD. The presentation largely follows the organization of a recent encyclopedia chapter on ALD [6]. Surface chemistry concepts will be introduced, such as ideal ALD from repeated, separate self-terminating (saturating and irreversible) reactions; growth per cycle in ALD; various monolayer concepts relevant to ALD; typical classes of surface reaction mechanisms and saturation-determining factors; growth modes; and ways to describe growth kinetics. Concepts, where differing views exist in the field and which thus need special attention, are pointed out. Typical deviations from the presented ideality are discussed.
For continuous education, a collaborative OpenLearning website on ALD is under construction [7]. Many of the images used in this tutorial—and in Refs. 6 and 7—are available in Wikimedia Commons [8] for easy and free reuse. To contribute to collective learning of the early history of ALD, the open-science effort Virtual Project on the History of ALD [4] still welcomes new volunteer participants.
[1] E. Ahvenniemi et al., J. Vac. Sci. Technol. A 35 (2017) 010801 (2017).[2] R.L. Puurunen, ECS Transactions 86 (6) (2018) 3-17; OA: DOI:10.1149/osf.io/exyv3[3] G.N. Parsons et al., J. Vac. Sci. Technol. A 38 (2020) 037001.[4] http://vph-ald.com[5] J.R. van Ommen, R.L. Puurunen, ALD 2020, https://youtu.be/jqm_wf49WwM[6] J.R. van Ommen, A. Goulas, R.L. Puurunen, Kirk-Othmer Encyclopedia on Chemical Technology, submitted. [7] http://openlearning.aalto.fi, ALD [8] https://commons.wikimedia.org/wiki/Category:Atomic_layer_deposition
"On the fundamentals of ALD: the importance of getting the picture right" by ...Riikka Puurunen
Presentation at the AVS 20th International Conference on Atomic Layer Deposition (ALD 2020) featuring the 7th International Atomic Layer Etching Workshop (ALE 2020), online, 29.6.-1.7.2020.
Authors: Riikka L. Puurunen and J. Ruud van Ommen
Abstract text:
Atomic layer deposition (ALD) has become of global importance as a fundamental building block for example in semiconductor device fabrication, and also gained more visibility (e.g., the Millennium Technology Prize 2018). In recent years, the number of ALD processes has increased, new groups have entered the field, and fundamental insights have been gained. At the same time, significantly varying views exist in the field related to the description and meaningfulness of some core ALD concepts. Open, respectful but critical scientific discussion would be needed around these concepts - for example at this AVS ALD/ALE conference, the world’s largest conference on ALD.
The discussion on terminology of ALD that started in the 2005 surface chemistry review [1] is continued in this contribution, taking into account recent progress reported in leading reviews such as Ref. 2. We start by considering the concept of “ideal ALD”. How should it be defined so that the well-recognized practical benefits of ALD are maintained, while no unnecessary utopian requirements are created? We propose that the repetition of well-separated saturating, irreversible chemisorption reactions (which by definition saturate at a monolayer of the chemisorbed species) is sufficient to reproduce the benefits of ALD. A requirement of “full monolayer growth” (of the ALD-grown material), progressed e.g. in numerous cartoons of ALD, is not needed. There should also be no reason to expect a constant growth per cycle (GPC) within the ALD window (the saturating chemistry is typically weakly temperature dependent), although such a scheme is repeatedly reproduced in the literature.
Other fundamental concepts will be pointed out, where mix-ups have been created. For example, although the GPC (or etch per cycle in Atomic Layer Etching) is a saturation-related concept and not a time-related kinetic parameter, Arrhenius plots have been sometimes created to extract “activation energies” of some process from these “growth/etch rates (per cycle)”. Also, “Langmuir adsorption” has been adopted as a way to model ALD in a simplified, lumped way. Notably, Langmuir adsorption assumes no interaction between adsorbed species, contrasting some recent discussions of “cooperative effects” in ALD. Also, concepts of “adsorption isotherm” and amount adsorbed vs. time (“saturation curve”), although fundamentally different, have been mixed.
We hope that the discussion on the fundamentals of ALD will be intensified, and that the discussion will help the field progress and flourish in the future.
[1] Puurunen, J. Appl. Phys. 97 (2005) 121301.
[2] Richey, de Paula, Bent, J. Chem. Phys. 152 (2020) 040902.
Catalysis Connected, Utrecht - slides of invited talk by Prof. Riikka PuurunenRiikka Puurunen
Talk given in Utrecht, The Netherlands, August 24, 2019
Title: Atomic layer deposition: Bridging semiconductors to catalysis and beyond
Abstract: This talk will briefly explain the fundamentals of atomic layer deposition (ALD), view key historical turning points of the technique, and attempt to look into the future of ALD in the field of catalysis. ALD, a thin film growth method based on repeated self-terminating gas-solid reactions of compatible compounds, has become known as an enabler of Moore’s law and is today commonplace in the manufacturing of semiconductor devices. Currently, ALD is seen as highly promising for the controlled preparation of heterogeneous catalysts, testified e.g. from the number of reviews that appear on the topic. ALD can be used to grow films or nanoparticles and even single sites, and it can be similarly applied on powders, engineered 3D structures, and flat model catalysts.
Surface coverage in atomic layer deposition - slides related to invited talk ...Riikka Puurunen
Invited talk given at the Workshop on Fundamentals of Atomic Layer Deposition (ALD): Modelling and ValidationTU Delft, The Netherlands, July 3, 2019. Talk was recorded by TU Delft staff and is to be shared later. Website: https://www.tudelft.nl/en/faculty-of-applied-sciences/about-faculty/departments/chemical-engineering/scientific-staff/van-ommen-group/workshop-fundamentals-of-ald/. Twitter hashtag: #ALDfun
ALD for Industry 2019: Slides of invited tutorial by Prof. Riikka PuurunenRiikka Puurunen
Invited tutorial given by Prof. Riikka Puurunen at the ALD for Industry event, Berlin, 19.3.2019.
Video record taken with Panopto, (to be) shared in Youtube, you find the links e.g. through the blog post: https://blogs.aalto.fi/catprofopen/2019/03/19/prof-puurunen-invited-tutorial-at-ald-for-industry-berlin/
Title: ALD Technology – Introduction, History & Principles
Abstract: This tutorial keynote will introduce atomic layer deposition (ALD) – a variant of chemical vapor deposition - and fundamental principles and concepts related it from a generic viewpoint applicable to any ALD process and reactor. The early history and current usage of ALD are briefly overviewed: who made the first experiments, when, and why? How has the view on the history of ALD evolved? Where is ALD now used, by whom, and why? ALD relies on repeated chemical adsorption steps from gas phase to surface. The status of understanding the adsorption steps of ALD films will be presented and discussed using mainly the archetype trimethylaluminium-water ALD process as example and 3D conformality modelling as additional vehicle. Plenty of links to further sources of information will be included in this keynote presentation.
A related SlideShare: placeholder, where I meant to update the slides afterwards, but this did not succeed as the reupload function has been removed: https://www.slideshare.net/RiikkaPuurunen/ald-for-industry-2019-invited-tutorial-by-prof-riikka-puurunen/RiikkaPuurunen/ald-for-industry-2019-invited-tutorial-by-prof-riikka-puurunen. The update was waiting for the publication of the following review article, which was still in press when giving the presentation: Cremers, Puurunen, Dendooven, Appl. Phys. Rev. (2019), https://doi.org/10.1063/1.5060967. Article published 4.4.2019: Applied Physics Reviews 6, 021302 (2019)
ALD for Industry 2019: Invited tutorial by Prof. Riikka Puurunen Riikka Puurunen
Oops! Could not update this placeholder with the final presentation as planned: The reupload function that I planned to use, has been removed from SlideShare, see: https://www.slideshare.net/dolaneconslide/bring-back-reupload
Slides uploaded separately: https://www.slideshare.net/RiikkaPuurunen/ald-for-industry-2019-slides-of-invited-tutorial-by-prof-riikka-puurunen
Originally, this update was waiting for the publication of a review article to be published on ALD conformality: Cremers, Puurunen, Dendooven, Appl. Phys. Rev. (2019), https://doi.org/10.1063/1.5060967. Article published 4.4.2019: Applied Physics Reviews 6, 021302 (2019)
Related post in Catalysis Professor's Open: https://blogs.aalto.fi/catprofopen/2019/03/19/prof-puurunen-invited-tutorial-at-ald-for-industry-berlin/
Adsorption-controlled catalyst preparation by ALDRiikka Puurunen
Lecture slides of Prof. Riikka Puurunen at Aalto University School of Chemical Engineering, CHEM-E1130 Catalysis, 25.2.2019, on the preparation of catalysts by atomic layer deposition.
Introduction to atomic layer deposition (ALD): principles, applications, futureRiikka Puurunen
<erratum at the bottom / update 3.5.2019> Introductory lecture on Atomic Layer Deposition (ALD) by Prof. Riikka Puurunen, given at Aalto University School of Chemical Engineering on November 8, 2018. Lecture contents: Principles and concepts of ALD; Some history; Applications of ALD; Words on future. In addition to the core lecture contents, discusses where we have ALD layers in our smart mobile phones; mentions (some) faces of ALD in Finland; STG podcasts; Virtual Project on the History of ALD.
Corresponding lecture capture by Panopto available at: https://aalto.cloud.panopto.eu/Panopto/Pages/Viewer.aspx?id=bd0aee67-7ca5-4973-8216-a99200e888b1
Erratum! Small errors spotted in the slides are described below. Updated 3.5.2019.
* slide 44 Luminescent: ZnS:Mg —> not Mg but Mn! --> ZnS:Mn
* slide 54 high-k solution: article not from 2017 but 2007
On the history and future of ALD: VPHA, conformality analysis, mechanismsRiikka Puurunen
Invited presentation at the HERALD COST MP1402 event in Riga (Riika), Latvia, May 22-23, 2017.
Topics:
1) History of atomic layer deposition (ALD)
2) Conformality analysis of ALD and other thin films
3) Surface chemistry questions in ALD
Presentation dedicated to the memory of Mr. Sven Lindfors, pioneer in building ALD reactors, close collaborator of Dr. Tuomo Suntola from 1975.
Invited talk at 98th CSC: Surface chemistry of ALD: mechanisms and conformality Riikka Puurunen
Abstract of the presentation:
Atomic layer deposition (ALD) is a thin film growth method generally applicable for the growth of conformal, highquality
inorganic material layers down to the nanometer thickness range. ALD is indifferent to the morphology of the
underlying substrate and covers even most complex 3-D shapes with a uniform film; as a consequence, ALD is used
in an ever-increasing field of applications from catalysts to photovoltaics to microelectronics and beyond. ALD
belongs to the general class of chemical vapour deposition (CVD) techniques. The speciality of ALD is the use of
repeated self-terminating (saturating, irreversible) gassolid reactions of at least two reactants for the film growth; ALD
is therefore non-continuous in nature, as opposed to the continuous CVD processes. In this presentation, I will
discuss some challenges related to understanding the surface chemistry of ALD. The commonly-used
trimethylaluminium-water ALD process to deposit Al2O3 is used as case example, as it is often presented as model
case for ALD. I will also discuss the characteristics of ALD film conformality, as detected by using microscopic lateral
high-aspect-ratio structures ("VTT μLHAR") [J. Vac. Sci. Technol. A 33, 010601 (2015)]. Here, the gap height is in
the range of 100 nm's and the aspect ratio (AR) can be extremely challenging, e.g. up to 25 000:1. Finally, I will
briefly introduce the on-going international volunteer-based Virtual Project on the History of ALD (http://vph-ald.com),
where new participants are still welcome.
Acknowledgement: The author thanks Finnish Centre of Excellence in Atomic Layer Deposition for funding.
PillarHall® silicon wafers and chips contain microscopic high-aspect-ratio pillar structures that enable easy analysis of thin film conformality using atomic layer deposition or chemical vapor deposition. The pillars allow for non-destructive measurement of film thickness on top, sides, and bottom of structures to determine conformality, as well as line scans along pillars to understand deposition kinetics and optimize process parameters. PillarHall® provides benefits over traditional cross-section analysis, including record aspect ratios over 10,000, wafer-scale mapping, and applicability at temperatures up to 800°C.
Slides of my first invited talk at a conference, the ALD 2005 conference in San Jose 2005, about ALD modelling. ALD is fantastic, but fantastic is not perfect :)
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R. L. Puurunen, Atomic-scale modelling of atomic layer deposition processes, American Vacuum Society Topical Conference on Atomic Layer Deposition (ALD 2005), San Jose, California, August 8-10, 2005. Invited talk.
Slides of invited talk on ALD for MEMS at the AVS-ALD conference ALD 2009 Monterey, California, USA
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Full reference:
R. L. Puurunen, M. Blomberg, H. Kattelus, ALD layer in MEMS fabrication, 9th International Conference on Atomic Layer Deposition “ALD 2009”, Monterey, California, July 19-22, 2009. Invited talk.
Slides of an invited talk, given at EuroCVD in 2007
R. L. Puurunen, Understanding the surface chemistry of atomic layer deposition: achievements and challenges, Sixteenth European Conference on Chemical Vapor Deposition, EuroCVD-16. Den Haag, The Netherlands, 16 - 21 Sept. 2007. Book of Extended Abstracts. Klein, C.R. (Ed.). Delft University of Technology (2007), 11. Invited talk.
ALD ATO nanolaminates with adjustable electrical properties, poster published...Riikka Puurunen
R. L. Puurunen, H. Kattelus, ALD ATO nanolaminates with adjustable electrical properties, 9th International Conference on Atomic Layer Deposition “ALD 2009”, Monterey, California, July 19-22, 2009. Poster presentation.
Acknowledgement (from the Abstract):
Acknowledgements: The authors are grateful to Ari Häärä for making the electrical measurements and to Sari Sirviö for supervising part of the sample fabrication and for initial interpretations of the results of the electrical measurements. This work was performed within the “ALDKOMP” project funded by Tekes (Finnish Funding Agency for Technology and Innovation).
Poster presented at the AVS ALD 2005 conference. This contains Al2O3 solubility data in deionized water and a report on the "bubbles" which form on ALD Al2O3 when heated. This work has been cited sometimes especially for the bubble formation, and now I want to make it easily accessible for all.
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Controlling the Solubility of ALD Aluminium Oxide in Deionised Water
Riikka L. Puurunen, Jyrki Kiihamäki and Hannu Kattelus
VTT Technical Research Centre of Finland
Conversational agents, or chatbots, are increasingly used to access all sorts of services using natural language. While open-domain chatbots - like ChatGPT - can converse on any topic, task-oriented chatbots - the focus of this paper - are designed for specific tasks, like booking a flight, obtaining customer support, or setting an appointment. Like any other software, task-oriented chatbots need to be properly tested, usually by defining and executing test scenarios (i.e., sequences of user-chatbot interactions). However, there is currently a lack of methods to quantify the completeness and strength of such test scenarios, which can lead to low-quality tests, and hence to buggy chatbots.
To fill this gap, we propose adapting mutation testing (MuT) for task-oriented chatbots. To this end, we introduce a set of mutation operators that emulate faults in chatbot designs, an architecture that enables MuT on chatbots built using heterogeneous technologies, and a practical realisation as an Eclipse plugin. Moreover, we evaluate the applicability, effectiveness and efficiency of our approach on open-source chatbots, with promising results.
Session 1 - Intro to Robotic Process Automation.pdfUiPathCommunity
👉 Check out our full 'Africa Series - Automation Student Developers (EN)' page to register for the full program:
https://bit.ly/Automation_Student_Kickstart
In this session, we shall introduce you to the world of automation, the UiPath Platform, and guide you on how to install and setup UiPath Studio on your Windows PC.
📕 Detailed agenda:
What is RPA? Benefits of RPA?
RPA Applications
The UiPath End-to-End Automation Platform
UiPath Studio CE Installation and Setup
💻 Extra training through UiPath Academy:
Introduction to Automation
UiPath Business Automation Platform
Explore automation development with UiPath Studio
👉 Register here for our upcoming Session 2 on June 20: Introduction to UiPath Studio Fundamentals: https://community.uipath.com/events/details/uipath-lagos-presents-session-2-introduction-to-uipath-studio-fundamentals/
QA or the Highway - Component Testing: Bridging the gap between frontend appl...zjhamm304
These are the slides for the presentation, "Component Testing: Bridging the gap between frontend applications" that was presented at QA or the Highway 2024 in Columbus, OH by Zachary Hamm.
Puurunen (on behalf of Järvilehto) oral presentation at ALD 2023 conferenceRiikka Puurunen
ALD 2023, Bellevue, Washington, July 2023
AUDIO: (see 1st page)
Title: Simulated Conformality of ALD Growth Inside Lateral HAR Channels: Comparison Between a Diffusion–Reaction Model and a Ballistic Transport–Reaction Model
Authors: Jänis Järvilehto,1 Jorge A. Velasco,1 Jihong Yim,1 Christine Gonsalves1 and Riikka L. Puurunen1
1Aalto University, School of Chemical Engineering, Department of Chemical and Metallurgical Engineering
Atomic layer deposition (ALD) is known for its ability to produce films of controllable thickness, even in narrow, high-aspect-ratio (HAR) structures [1]. These films can be highly conformal, meaning that the structure is covered by a film of uniform thickness [1,2]. However, when the structure’s aspect ratio is increased sufficiently, deposition becomes limited by the diffusion of the reactants into the deep end of the structure, potentially resulting in the formation of an adsorption front, followed by a region of lower coverage [3]. Theoretical models have been developed to predict film conformality in HAR structures, as reviewed in [2].
This work presents a comparison of a diffusion–reaction model (DRM) developed by Ylilammi et al. [4,5] (Model A) and a ballistic transport–reaction model (BTRM) by Yanguas-Gil and Elam [6,7] (Model B). For the comparison, saturation profiles were generated using both models with similar simulation parameters (Knudsen number Kn >> 1).
Qualitatively, both models produced similar trends in terms of half-coverage penetration depth and slope at half-coverage penetration depth. The saturation profiles were similar in shape, except for the film growth observed at the channel end in Model B. Quantitative examination yielded consistently higher half-coverage penetration depths in Model B. Model A produced steeper slopes at half-coverage penetration depth. In Model B, the discretization resolution was found to affect the penetration depth.
While the models gave qualitatively similar results, quantitatively extracted parameters differed. This finding is consistent with a previous comparison of a DRM and BTRM in the context of low pressure chemical vapor deposition [8]. The quantitative differences are relevant, for example, when the models are fitted to experimental data for the extraction of kinetic parameters, such as the sticking coefficient.
[1] J.R. van Ommen, A. Goulas, and R.L. Puurunen, “Atomic layer deposition,” in Kirk Othmer Encyclopedia of
Chemical Technology, John Wiley & Sons, Inc., 42 p, (2021).
[2] V. Cremers et al., Appl. Phys. Rev. 6 (2019) 021302.
[3] J. Yim and O.M.E. Ylivaara et al., Phys. Chem. Chem. Phys. 22 (2020) 23107-23120.
[4] M. Ylilammi et al., J. Appl. Phys. 123 (2018) 205301.
[5] J. Yim and E. Verkama et al., Phys. Chem. Chem. Phys. 24 (2022) 8645–8660.
[6] A. Yanguas-Gil and J.W. Elam, Theor. Chem. Acc. 133 (2014) 1465.
[7] A. Yanguas-Gil and J.W. Elam, (2013) ...
Puurunen invited talk at IUPAC|Chains2023, The Hague, Netherlands, Aug 20-25,...Riikka Puurunen
The document is a presentation on atomic layer deposition (ALD) given by Riikka Puurunen at the IUPAC|CHAINS2023 World Chemistry Congress. The presentation provides an introduction to ALD, including its history dating back to 1974 with its independent inventions in Finland and Russia. It discusses the fundamentals and typical process conditions of ALD as well as examples of its applications. The presentation emphasizes ALD's ability to conformally coat substrates and provides examples of Puurunen's own research on ALD catalyst synthesis and modeling ALD growth. It concludes by discussing opportunities for future ALD research and the importance of open science practices.
Slides of invited "ALD 101" tutorial by Puurunen at ALD 2021 Riikka Puurunen
(INVITED) Fundamentals of atomic layer deposition: an introduction (“ALD 101”)
Riikka L. Puurunen, Aalto University School of Chemical Engineering, Department of Chemical and Metallurgical Engineering, AVS 21st International Conference on Atomic Layer Deposition (ALD 2021), Virtual Meeting 27.6.-30.6.2021. Tutorial Session 27.6.2021
ABSTRACT: Atomic layer deposition (ALD) has become of global importance as a processing technology for example in semiconductor device fabrication, and its application areas are continuously expanding. The significance of ALD was highlighted e.g. by the recent (2018) Millennium Technology Prize. Tens of companies are offering ALD tools, and thousands of people are involved in ALD R&D globally. A continuous need exists to educate new people on the fundamentals of ALD.
While ALD for manufacturing may be regarded mature, as a scientific field, ALD—in the author’s view—is developing. For example, understanding of the early history of ALD is evolving, related to the two independent inventions of ALD under the names Atomic Layer Epitaxy in the 1970s and Molecular Layering in the 1960s [1-4]. Also, significantly varying views exist in the field related to the description and meaningfulness of even some core ALD concepts [5].
The purpose of this invited “ALD 101” tutorial is to familiarize a newcomer with fundamentals of ALD. The presentation largely follows the organization of a recent encyclopedia chapter on ALD [6]. Surface chemistry concepts will be introduced, such as ideal ALD from repeated, separate self-terminating (saturating and irreversible) reactions; growth per cycle in ALD; various monolayer concepts relevant to ALD; typical classes of surface reaction mechanisms and saturation-determining factors; growth modes; and ways to describe growth kinetics. Concepts, where differing views exist in the field and which thus need special attention, are pointed out. Typical deviations from the presented ideality are discussed.
For continuous education, a collaborative OpenLearning website on ALD is under construction [7]. Many of the images used in this tutorial—and in Refs. 6 and 7—are available in Wikimedia Commons [8] for easy and free reuse. To contribute to collective learning of the early history of ALD, the open-science effort Virtual Project on the History of ALD [4] still welcomes new volunteer participants.
[1] E. Ahvenniemi et al., J. Vac. Sci. Technol. A 35 (2017) 010801 (2017).[2] R.L. Puurunen, ECS Transactions 86 (6) (2018) 3-17; OA: DOI:10.1149/osf.io/exyv3[3] G.N. Parsons et al., J. Vac. Sci. Technol. A 38 (2020) 037001.[4] http://vph-ald.com[5] J.R. van Ommen, R.L. Puurunen, ALD 2020, https://youtu.be/jqm_wf49WwM[6] J.R. van Ommen, A. Goulas, R.L. Puurunen, Kirk-Othmer Encyclopedia on Chemical Technology, submitted. [7] http://openlearning.aalto.fi, ALD [8] https://commons.wikimedia.org/wiki/Category:Atomic_layer_deposition
"On the fundamentals of ALD: the importance of getting the picture right" by ...Riikka Puurunen
Presentation at the AVS 20th International Conference on Atomic Layer Deposition (ALD 2020) featuring the 7th International Atomic Layer Etching Workshop (ALE 2020), online, 29.6.-1.7.2020.
Authors: Riikka L. Puurunen and J. Ruud van Ommen
Abstract text:
Atomic layer deposition (ALD) has become of global importance as a fundamental building block for example in semiconductor device fabrication, and also gained more visibility (e.g., the Millennium Technology Prize 2018). In recent years, the number of ALD processes has increased, new groups have entered the field, and fundamental insights have been gained. At the same time, significantly varying views exist in the field related to the description and meaningfulness of some core ALD concepts. Open, respectful but critical scientific discussion would be needed around these concepts - for example at this AVS ALD/ALE conference, the world’s largest conference on ALD.
The discussion on terminology of ALD that started in the 2005 surface chemistry review [1] is continued in this contribution, taking into account recent progress reported in leading reviews such as Ref. 2. We start by considering the concept of “ideal ALD”. How should it be defined so that the well-recognized practical benefits of ALD are maintained, while no unnecessary utopian requirements are created? We propose that the repetition of well-separated saturating, irreversible chemisorption reactions (which by definition saturate at a monolayer of the chemisorbed species) is sufficient to reproduce the benefits of ALD. A requirement of “full monolayer growth” (of the ALD-grown material), progressed e.g. in numerous cartoons of ALD, is not needed. There should also be no reason to expect a constant growth per cycle (GPC) within the ALD window (the saturating chemistry is typically weakly temperature dependent), although such a scheme is repeatedly reproduced in the literature.
Other fundamental concepts will be pointed out, where mix-ups have been created. For example, although the GPC (or etch per cycle in Atomic Layer Etching) is a saturation-related concept and not a time-related kinetic parameter, Arrhenius plots have been sometimes created to extract “activation energies” of some process from these “growth/etch rates (per cycle)”. Also, “Langmuir adsorption” has been adopted as a way to model ALD in a simplified, lumped way. Notably, Langmuir adsorption assumes no interaction between adsorbed species, contrasting some recent discussions of “cooperative effects” in ALD. Also, concepts of “adsorption isotherm” and amount adsorbed vs. time (“saturation curve”), although fundamentally different, have been mixed.
We hope that the discussion on the fundamentals of ALD will be intensified, and that the discussion will help the field progress and flourish in the future.
[1] Puurunen, J. Appl. Phys. 97 (2005) 121301.
[2] Richey, de Paula, Bent, J. Chem. Phys. 152 (2020) 040902.
Catalysis Connected, Utrecht - slides of invited talk by Prof. Riikka PuurunenRiikka Puurunen
Talk given in Utrecht, The Netherlands, August 24, 2019
Title: Atomic layer deposition: Bridging semiconductors to catalysis and beyond
Abstract: This talk will briefly explain the fundamentals of atomic layer deposition (ALD), view key historical turning points of the technique, and attempt to look into the future of ALD in the field of catalysis. ALD, a thin film growth method based on repeated self-terminating gas-solid reactions of compatible compounds, has become known as an enabler of Moore’s law and is today commonplace in the manufacturing of semiconductor devices. Currently, ALD is seen as highly promising for the controlled preparation of heterogeneous catalysts, testified e.g. from the number of reviews that appear on the topic. ALD can be used to grow films or nanoparticles and even single sites, and it can be similarly applied on powders, engineered 3D structures, and flat model catalysts.
Surface coverage in atomic layer deposition - slides related to invited talk ...Riikka Puurunen
Invited talk given at the Workshop on Fundamentals of Atomic Layer Deposition (ALD): Modelling and ValidationTU Delft, The Netherlands, July 3, 2019. Talk was recorded by TU Delft staff and is to be shared later. Website: https://www.tudelft.nl/en/faculty-of-applied-sciences/about-faculty/departments/chemical-engineering/scientific-staff/van-ommen-group/workshop-fundamentals-of-ald/. Twitter hashtag: #ALDfun
ALD for Industry 2019: Slides of invited tutorial by Prof. Riikka PuurunenRiikka Puurunen
Invited tutorial given by Prof. Riikka Puurunen at the ALD for Industry event, Berlin, 19.3.2019.
Video record taken with Panopto, (to be) shared in Youtube, you find the links e.g. through the blog post: https://blogs.aalto.fi/catprofopen/2019/03/19/prof-puurunen-invited-tutorial-at-ald-for-industry-berlin/
Title: ALD Technology – Introduction, History & Principles
Abstract: This tutorial keynote will introduce atomic layer deposition (ALD) – a variant of chemical vapor deposition - and fundamental principles and concepts related it from a generic viewpoint applicable to any ALD process and reactor. The early history and current usage of ALD are briefly overviewed: who made the first experiments, when, and why? How has the view on the history of ALD evolved? Where is ALD now used, by whom, and why? ALD relies on repeated chemical adsorption steps from gas phase to surface. The status of understanding the adsorption steps of ALD films will be presented and discussed using mainly the archetype trimethylaluminium-water ALD process as example and 3D conformality modelling as additional vehicle. Plenty of links to further sources of information will be included in this keynote presentation.
A related SlideShare: placeholder, where I meant to update the slides afterwards, but this did not succeed as the reupload function has been removed: https://www.slideshare.net/RiikkaPuurunen/ald-for-industry-2019-invited-tutorial-by-prof-riikka-puurunen/RiikkaPuurunen/ald-for-industry-2019-invited-tutorial-by-prof-riikka-puurunen. The update was waiting for the publication of the following review article, which was still in press when giving the presentation: Cremers, Puurunen, Dendooven, Appl. Phys. Rev. (2019), https://doi.org/10.1063/1.5060967. Article published 4.4.2019: Applied Physics Reviews 6, 021302 (2019)
ALD for Industry 2019: Invited tutorial by Prof. Riikka Puurunen Riikka Puurunen
Oops! Could not update this placeholder with the final presentation as planned: The reupload function that I planned to use, has been removed from SlideShare, see: https://www.slideshare.net/dolaneconslide/bring-back-reupload
Slides uploaded separately: https://www.slideshare.net/RiikkaPuurunen/ald-for-industry-2019-slides-of-invited-tutorial-by-prof-riikka-puurunen
Originally, this update was waiting for the publication of a review article to be published on ALD conformality: Cremers, Puurunen, Dendooven, Appl. Phys. Rev. (2019), https://doi.org/10.1063/1.5060967. Article published 4.4.2019: Applied Physics Reviews 6, 021302 (2019)
Related post in Catalysis Professor's Open: https://blogs.aalto.fi/catprofopen/2019/03/19/prof-puurunen-invited-tutorial-at-ald-for-industry-berlin/
Adsorption-controlled catalyst preparation by ALDRiikka Puurunen
Lecture slides of Prof. Riikka Puurunen at Aalto University School of Chemical Engineering, CHEM-E1130 Catalysis, 25.2.2019, on the preparation of catalysts by atomic layer deposition.
Introduction to atomic layer deposition (ALD): principles, applications, futureRiikka Puurunen
<erratum at the bottom / update 3.5.2019> Introductory lecture on Atomic Layer Deposition (ALD) by Prof. Riikka Puurunen, given at Aalto University School of Chemical Engineering on November 8, 2018. Lecture contents: Principles and concepts of ALD; Some history; Applications of ALD; Words on future. In addition to the core lecture contents, discusses where we have ALD layers in our smart mobile phones; mentions (some) faces of ALD in Finland; STG podcasts; Virtual Project on the History of ALD.
Corresponding lecture capture by Panopto available at: https://aalto.cloud.panopto.eu/Panopto/Pages/Viewer.aspx?id=bd0aee67-7ca5-4973-8216-a99200e888b1
Erratum! Small errors spotted in the slides are described below. Updated 3.5.2019.
* slide 44 Luminescent: ZnS:Mg —> not Mg but Mn! --> ZnS:Mn
* slide 54 high-k solution: article not from 2017 but 2007
On the history and future of ALD: VPHA, conformality analysis, mechanismsRiikka Puurunen
Invited presentation at the HERALD COST MP1402 event in Riga (Riika), Latvia, May 22-23, 2017.
Topics:
1) History of atomic layer deposition (ALD)
2) Conformality analysis of ALD and other thin films
3) Surface chemistry questions in ALD
Presentation dedicated to the memory of Mr. Sven Lindfors, pioneer in building ALD reactors, close collaborator of Dr. Tuomo Suntola from 1975.
Invited talk at 98th CSC: Surface chemistry of ALD: mechanisms and conformality Riikka Puurunen
Abstract of the presentation:
Atomic layer deposition (ALD) is a thin film growth method generally applicable for the growth of conformal, highquality
inorganic material layers down to the nanometer thickness range. ALD is indifferent to the morphology of the
underlying substrate and covers even most complex 3-D shapes with a uniform film; as a consequence, ALD is used
in an ever-increasing field of applications from catalysts to photovoltaics to microelectronics and beyond. ALD
belongs to the general class of chemical vapour deposition (CVD) techniques. The speciality of ALD is the use of
repeated self-terminating (saturating, irreversible) gassolid reactions of at least two reactants for the film growth; ALD
is therefore non-continuous in nature, as opposed to the continuous CVD processes. In this presentation, I will
discuss some challenges related to understanding the surface chemistry of ALD. The commonly-used
trimethylaluminium-water ALD process to deposit Al2O3 is used as case example, as it is often presented as model
case for ALD. I will also discuss the characteristics of ALD film conformality, as detected by using microscopic lateral
high-aspect-ratio structures ("VTT μLHAR") [J. Vac. Sci. Technol. A 33, 010601 (2015)]. Here, the gap height is in
the range of 100 nm's and the aspect ratio (AR) can be extremely challenging, e.g. up to 25 000:1. Finally, I will
briefly introduce the on-going international volunteer-based Virtual Project on the History of ALD (http://vph-ald.com),
where new participants are still welcome.
Acknowledgement: The author thanks Finnish Centre of Excellence in Atomic Layer Deposition for funding.
PillarHall® silicon wafers and chips contain microscopic high-aspect-ratio pillar structures that enable easy analysis of thin film conformality using atomic layer deposition or chemical vapor deposition. The pillars allow for non-destructive measurement of film thickness on top, sides, and bottom of structures to determine conformality, as well as line scans along pillars to understand deposition kinetics and optimize process parameters. PillarHall® provides benefits over traditional cross-section analysis, including record aspect ratios over 10,000, wafer-scale mapping, and applicability at temperatures up to 800°C.
Slides of my first invited talk at a conference, the ALD 2005 conference in San Jose 2005, about ALD modelling. ALD is fantastic, but fantastic is not perfect :)
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R. L. Puurunen, Atomic-scale modelling of atomic layer deposition processes, American Vacuum Society Topical Conference on Atomic Layer Deposition (ALD 2005), San Jose, California, August 8-10, 2005. Invited talk.
Slides of invited talk on ALD for MEMS at the AVS-ALD conference ALD 2009 Monterey, California, USA
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Full reference:
R. L. Puurunen, M. Blomberg, H. Kattelus, ALD layer in MEMS fabrication, 9th International Conference on Atomic Layer Deposition “ALD 2009”, Monterey, California, July 19-22, 2009. Invited talk.
Slides of an invited talk, given at EuroCVD in 2007
R. L. Puurunen, Understanding the surface chemistry of atomic layer deposition: achievements and challenges, Sixteenth European Conference on Chemical Vapor Deposition, EuroCVD-16. Den Haag, The Netherlands, 16 - 21 Sept. 2007. Book of Extended Abstracts. Klein, C.R. (Ed.). Delft University of Technology (2007), 11. Invited talk.
ALD ATO nanolaminates with adjustable electrical properties, poster published...Riikka Puurunen
R. L. Puurunen, H. Kattelus, ALD ATO nanolaminates with adjustable electrical properties, 9th International Conference on Atomic Layer Deposition “ALD 2009”, Monterey, California, July 19-22, 2009. Poster presentation.
Acknowledgement (from the Abstract):
Acknowledgements: The authors are grateful to Ari Häärä for making the electrical measurements and to Sari Sirviö for supervising part of the sample fabrication and for initial interpretations of the results of the electrical measurements. This work was performed within the “ALDKOMP” project funded by Tekes (Finnish Funding Agency for Technology and Innovation).
Poster presented at the AVS ALD 2005 conference. This contains Al2O3 solubility data in deionized water and a report on the "bubbles" which form on ALD Al2O3 when heated. This work has been cited sometimes especially for the bubble formation, and now I want to make it easily accessible for all.
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Controlling the Solubility of ALD Aluminium Oxide in Deionised Water
Riikka L. Puurunen, Jyrki Kiihamäki and Hannu Kattelus
VTT Technical Research Centre of Finland
Conversational agents, or chatbots, are increasingly used to access all sorts of services using natural language. While open-domain chatbots - like ChatGPT - can converse on any topic, task-oriented chatbots - the focus of this paper - are designed for specific tasks, like booking a flight, obtaining customer support, or setting an appointment. Like any other software, task-oriented chatbots need to be properly tested, usually by defining and executing test scenarios (i.e., sequences of user-chatbot interactions). However, there is currently a lack of methods to quantify the completeness and strength of such test scenarios, which can lead to low-quality tests, and hence to buggy chatbots.
To fill this gap, we propose adapting mutation testing (MuT) for task-oriented chatbots. To this end, we introduce a set of mutation operators that emulate faults in chatbot designs, an architecture that enables MuT on chatbots built using heterogeneous technologies, and a practical realisation as an Eclipse plugin. Moreover, we evaluate the applicability, effectiveness and efficiency of our approach on open-source chatbots, with promising results.
Session 1 - Intro to Robotic Process Automation.pdfUiPathCommunity
👉 Check out our full 'Africa Series - Automation Student Developers (EN)' page to register for the full program:
https://bit.ly/Automation_Student_Kickstart
In this session, we shall introduce you to the world of automation, the UiPath Platform, and guide you on how to install and setup UiPath Studio on your Windows PC.
📕 Detailed agenda:
What is RPA? Benefits of RPA?
RPA Applications
The UiPath End-to-End Automation Platform
UiPath Studio CE Installation and Setup
💻 Extra training through UiPath Academy:
Introduction to Automation
UiPath Business Automation Platform
Explore automation development with UiPath Studio
👉 Register here for our upcoming Session 2 on June 20: Introduction to UiPath Studio Fundamentals: https://community.uipath.com/events/details/uipath-lagos-presents-session-2-introduction-to-uipath-studio-fundamentals/
QA or the Highway - Component Testing: Bridging the gap between frontend appl...zjhamm304
These are the slides for the presentation, "Component Testing: Bridging the gap between frontend applications" that was presented at QA or the Highway 2024 in Columbus, OH by Zachary Hamm.
AppSec PNW: Android and iOS Application Security with MobSFAjin Abraham
Mobile Security Framework - MobSF is a free and open source automated mobile application security testing environment designed to help security engineers, researchers, developers, and penetration testers to identify security vulnerabilities, malicious behaviours and privacy concerns in mobile applications using static and dynamic analysis. It supports all the popular mobile application binaries and source code formats built for Android and iOS devices. In addition to automated security assessment, it also offers an interactive testing environment to build and execute scenario based test/fuzz cases against the application.
This talk covers:
Using MobSF for static analysis of mobile applications.
Interactive dynamic security assessment of Android and iOS applications.
Solving Mobile app CTF challenges.
Reverse engineering and runtime analysis of Mobile malware.
How to shift left and integrate MobSF/mobsfscan SAST and DAST in your build pipeline.
What is an RPA CoE? Session 2 – CoE RolesDianaGray10
In this session, we will review the players involved in the CoE and how each role impacts opportunities.
Topics covered:
• What roles are essential?
• What place in the automation journey does each role play?
Speaker:
Chris Bolin, Senior Intelligent Automation Architect Anika Systems
Dandelion Hashtable: beyond billion requests per second on a commodity serverAntonios Katsarakis
This slide deck presents DLHT, a concurrent in-memory hashtable. Despite efforts to optimize hashtables, that go as far as sacrificing core functionality, state-of-the-art designs still incur multiple memory accesses per request and block request processing in three cases. First, most hashtables block while waiting for data to be retrieved from memory. Second, open-addressing designs, which represent the current state-of-the-art, either cannot free index slots on deletes or must block all requests to do so. Third, index resizes block every request until all objects are copied to the new index. Defying folklore wisdom, DLHT forgoes open-addressing and adopts a fully-featured and memory-aware closed-addressing design based on bounded cache-line-chaining. This design offers lock-free index operations and deletes that free slots instantly, (2) completes most requests with a single memory access, (3) utilizes software prefetching to hide memory latencies, and (4) employs a novel non-blocking and parallel resizing. In a commodity server and a memory-resident workload, DLHT surpasses 1.6B requests per second and provides 3.5x (12x) the throughput of the state-of-the-art closed-addressing (open-addressing) resizable hashtable on Gets (Deletes).
Essentials of Automations: Exploring Attributes & Automation ParametersSafe Software
Building automations in FME Flow can save time, money, and help businesses scale by eliminating data silos and providing data to stakeholders in real-time. One essential component to orchestrating complex automations is the use of attributes & automation parameters (both formerly known as “keys”). In fact, it’s unlikely you’ll ever build an Automation without using these components, but what exactly are they?
Attributes & automation parameters enable the automation author to pass data values from one automation component to the next. During this webinar, our FME Flow Specialists will cover leveraging the three types of these output attributes & parameters in FME Flow: Event, Custom, and Automation. As a bonus, they’ll also be making use of the Split-Merge Block functionality.
You’ll leave this webinar with a better understanding of how to maximize the potential of automations by making use of attributes & automation parameters, with the ultimate goal of setting your enterprise integration workflows up on autopilot.
ScyllaDB is making a major architecture shift. We’re moving from vNode replication to tablets – fragments of tables that are distributed independently, enabling dynamic data distribution and extreme elasticity. In this keynote, ScyllaDB co-founder and CTO Avi Kivity explains the reason for this shift, provides a look at the implementation and roadmap, and shares how this shift benefits ScyllaDB users.
"$10 thousand per minute of downtime: architecture, queues, streaming and fin...Fwdays
Direct losses from downtime in 1 minute = $5-$10 thousand dollars. Reputation is priceless.
As part of the talk, we will consider the architectural strategies necessary for the development of highly loaded fintech solutions. We will focus on using queues and streaming to efficiently work and manage large amounts of data in real-time and to minimize latency.
We will focus special attention on the architectural patterns used in the design of the fintech system, microservices and event-driven architecture, which ensure scalability, fault tolerance, and consistency of the entire system.
[OReilly Superstream] Occupy the Space: A grassroots guide to engineering (an...Jason Yip
The typical problem in product engineering is not bad strategy, so much as “no strategy”. This leads to confusion, lack of motivation, and incoherent action. The next time you look for a strategy and find an empty space, instead of waiting for it to be filled, I will show you how to fill it in yourself. If you’re wrong, it forces a correction. If you’re right, it helps create focus. I’ll share how I’ve approached this in the past, both what works and lessons for what didn’t work so well.
What is an RPA CoE? Session 1 – CoE VisionDianaGray10
In the first session, we will review the organization's vision and how this has an impact on the COE Structure.
Topics covered:
• The role of a steering committee
• How do the organization’s priorities determine CoE Structure?
Speaker:
Chris Bolin, Senior Intelligent Automation Architect Anika Systems
For the full video of this presentation, please visit: https://www.edge-ai-vision.com/2024/06/temporal-event-neural-networks-a-more-efficient-alternative-to-the-transformer-a-presentation-from-brainchip/
Chris Jones, Director of Product Management at BrainChip , presents the “Temporal Event Neural Networks: A More Efficient Alternative to the Transformer” tutorial at the May 2024 Embedded Vision Summit.
The expansion of AI services necessitates enhanced computational capabilities on edge devices. Temporal Event Neural Networks (TENNs), developed by BrainChip, represent a novel and highly efficient state-space network. TENNs demonstrate exceptional proficiency in handling multi-dimensional streaming data, facilitating advancements in object detection, action recognition, speech enhancement and language model/sequence generation. Through the utilization of polynomial-based continuous convolutions, TENNs streamline models, expedite training processes and significantly diminish memory requirements, achieving notable reductions of up to 50x in parameters and 5,000x in energy consumption compared to prevailing methodologies like transformers.
Integration with BrainChip’s Akida neuromorphic hardware IP further enhances TENNs’ capabilities, enabling the realization of highly capable, portable and passively cooled edge devices. This presentation delves into the technical innovations underlying TENNs, presents real-world benchmarks, and elucidates how this cutting-edge approach is positioned to revolutionize edge AI across diverse applications.
In the realm of cybersecurity, offensive security practices act as a critical shield. By simulating real-world attacks in a controlled environment, these techniques expose vulnerabilities before malicious actors can exploit them. This proactive approach allows manufacturers to identify and fix weaknesses, significantly enhancing system security.
This presentation delves into the development of a system designed to mimic Galileo's Open Service signal using software-defined radio (SDR) technology. We'll begin with a foundational overview of both Global Navigation Satellite Systems (GNSS) and the intricacies of digital signal processing.
The presentation culminates in a live demonstration. We'll showcase the manipulation of Galileo's Open Service pilot signal, simulating an attack on various software and hardware systems. This practical demonstration serves to highlight the potential consequences of unaddressed vulnerabilities, emphasizing the importance of offensive security practices in safeguarding critical infrastructure.
Introduction of Cybersecurity with OSS at Code Europe 2024Hiroshi SHIBATA
I develop the Ruby programming language, RubyGems, and Bundler, which are package managers for Ruby. Today, I will introduce how to enhance the security of your application using open-source software (OSS) examples from Ruby and RubyGems.
The first topic is CVE (Common Vulnerabilities and Exposures). I have published CVEs many times. But what exactly is a CVE? I'll provide a basic understanding of CVEs and explain how to detect and handle vulnerabilities in OSS.
Next, let's discuss package managers. Package managers play a critical role in the OSS ecosystem. I'll explain how to manage library dependencies in your application.
I'll share insights into how the Ruby and RubyGems core team works to keep our ecosystem safe. By the end of this talk, you'll have a better understanding of how to safeguard your code.
"What does it really mean for your system to be available, or how to define w...Fwdays
We will talk about system monitoring from a few different angles. We will start by covering the basics, then discuss SLOs, how to define them, and why understanding the business well is crucial for success in this exercise.
"Scaling RAG Applications to serve millions of users", Kevin GoedeckeFwdays
How we managed to grow and scale a RAG application from zero to thousands of users in 7 months. Lessons from technical challenges around managing high load for LLMs, RAGs and Vector databases.
"Scaling RAG Applications to serve millions of users", Kevin Goedecke
ALD history project: open introduction
1. Virtual Project on the History of ALD: Introduction
•GOAL: generate a common view on the early evolution of ALD in a
collaborative project by the whole ALD community
•UNKNOWNS: ALD done under the name Molecular Layering (ML)
made in the Soviet Union starting from 1960’s
•INVITATION TO PARTICIPATE: www.aldpulse.com/node/189,
signed by Riikka L. Puurunen VTT, Aziz Abdulagatov NIST, Jonas
SundqvistFraunhofer IPMS-CNT, AnninaTitoffaldpulse.com
Anyone welcome to join!
Participation: read & comment on the significance of at least one
historical publication that interests you. You may also help
building a complete list of early publications, here.
Different backgrounds of the participants beneficial
Open for contributions until the end of 2013
To be carried out in atmosphere of openness, respect and trust
“Open Intro of the Virtual project on the history of ALD” by Riikka Puurunen in SlideShare
13.1.2014
2. How will the results be published?
• First: POSTER at the 12th Baltic ALD conference
• Helsinki, Finland, May 12-13, 2014, see
http://www.aldcoe.fi/bald2014/
•CONTENTS: Both the literature and the comments will be listed.
•AUTHORSHIP:
•Everyone, who contributed, will be an author
• 10 to 100 authors expected, and even more would be ok
• Author list will be alphabetical, on the basis of the last name, to
highlight that everyone’s contribution is of equal value
Full PUBLICATION PLAN in http://aldpulse.com/node/248, for example:
•
Poster at AVS-ALD 2014 in Kyoto, June 2014
•
Review article (open authorship!)
•
Updating Wikipedia
“Open Intro of the Virtual project on the history of ALD” by Riikka Puurunen in SlideShare
13.1.2014
3. Additional material related to the
“virtual project on the history of ALD”
“Open Intro of the Virtual project on the history of ALD” by Riikka Puurunen in SlideShare
13.1.2014
4. Timeline (1/2):
• Public discussions in LinkedIn in the group “ALD – atomic layer deposition”
• “ What are the "Molecular layering" papers by Koltsov from "early 1960's"? “
• Private discussions from May 2013 on by RiikkaPuurunen and Aziz Abdulagatov, soon
joined by Jonas Sundqvist and AnninaTitoff
• Planning how to realize a world-wide open effort
• ALD History LinkedIn subgroup created June 20, 2013
• 83 members as of 4.1.2014
• ALD History Mendeley group opened June 25, 2013
• Introduction and Invitation to participate published July 25, 2013, link
• Announcement of the project at ALD 2013, San Diego, July 30, 2013
•SlideShare for use August 18, 2013 (ALD 2013 presentation, link)
• First Comment by a visitor in the Google file August 24, 2013
•Introduction slides uploaded for free use in SlideShare August 31, 2013, link
• Includes description of the publication plan for BALD 2014
• Announcement of the project at MME 2013, Helsinki, Sept 2, 2013
• Announcement of the project at EuroCVD-19, Varna, Sept 5, 2013
• Wikipedia, “atomic layer deposition”, updated Oct 16, 2013
“Open Intro of the Virtual project on the history of ALD” by Riikka Puurunen in SlideShare
13.1.2014
5. Timeline (2/2):
• Publication plan published in http://aldpulse.com/node/248 , Oct 18, 2013
• Presentation on the history of ALD in St Petersburg, Nov 15, 2013 (copy of slides
provided on request, please ask Riikka)
• Virtual Project on the History of ALD continues with RiikkaPuurunen, Jonas Sundqvist
and AnninaTitoff, Dec 10, 2013
• Publication Plan v2.0, link here, Jan 13, 2014
Collecting of authors for the posters at Baltic ALD in Helsinki and AVS-ALD 2014
in Kyoto is on-going.
Interested to participate? Please contact RiikkaPuurunen and Jonas
Sundqvist, Riikka @vtt.fi and Jonas @cnt.fraunhofer.de (firstname.lastname@...)
“Open Intro of the Virtual project on the history of ALD” by Riikka Puurunen in SlideShare
13.1.2014
6. About the logo of the “virtual project”
• Logo has been designed by RiikkaPuurunen (June 2013) for use in
the LinkedIn ALD History group as well as other communication
related to the virtual project
• The history of ALD is not black and white, but better described in
shades of grey; thus, the logo was made in shades of grey.
•With this virtual project, we are in practice (re-)writing the early
history of ALD on the ML works, so “history” is in a handwriting-type
font
“Open Intro of the Virtual project on the history of ALD” by Riikka Puurunen in SlideShare
13.1.2014
7. About how to use this file
•This is a slide-formed introduction to the virtual project, to be kept
and updated in SlideShare at least during fall 2013.
• This is aimed for introducing the project in class, at conferences, …,
and can be used by anyone interested
• You may download a copy of the file and use it in the way you want
(e.g. remove the for-your-purpose unnecessary slides)
• If you see a need for change in the contents, please do not modify
the contents yourself, but leave a comment to the file in Slideshare in
the Comments section after this slide we can make and upload an
improved version.
•When there is new significant info that should be made available in
this presentation, this slide set will be updated and re-loaded in
SlideShare
• Please consider the date indicated the “version number”
“Open Intro of the Virtual project on the history of ALD” by Riikka Puurunen in SlideShare
13.1.2014
Editor's Notes
ALD is a fantastic technique that changes, for its part, the world we live in. As for any important technological invention, it is important and interesting to know, where ALD has come from. Most people present today are probably familiar with the invention by TuomoSuntola on Atomic Layer Epitaxy. This started the Finnish branch of ALD in 1974. In the first experiments, zinc sulfide was made from elemental precursors, in a rotary reactor (nowadays called “spacial ALD”). But how many are familiar with the work made by Aleskovskii and Kol’tsov on Molecular Layering in the Soviet Union, which started the Russian branch of ALD? These researchers worked in 1960’s, and they were there before Suntola. When exactly was ALD demonstrated there, and which was the first process? This is currently under discussion. Some people have also recently proposed that actually the nobelist Irvin Langmuir would have done ALD, much earlier – when and how, I think the details have not been brought up. Discussion on the history is popping up every now and then, because the history is poorly described. It would be valuable for the whole scientific ALD community, to have a widely accepted description of the early development of ALD. Creating such a description is a task is larger than any single individual can do, because we all look at the facts from our own background and narrow perspective. To create a common view on the history of ALD, we have started a totally open, collaborative project, where we hope to get scientists from different backgrounds participate and work together.We have been thinking how to realize such a project, and we think we have found a way that works. An open invitation to participate has recently been published at the internet site aldpulse.com.
ALD is a fantastic technique that changes, for its part, the world we live in. As for any important technological invention, it is important and interesting to know, where ALD has come from. Most people present today are probably familiar with the invention by TuomoSuntola on Atomic Layer Epitaxy. This started the Finnish branch of ALD in 1974. In the first experiments, zinc sulfide was made from elemental precursors, in a rotary reactor (nowadays called “spacial ALD”). But how many are familiar with the work made by Aleskovskii and Kol’tsov on Molecular Layering in the Soviet Union, which started the Russian branch of ALD? These researchers worked in 1960’s, and they were there before Suntola. When exactly was ALD demonstrated there, and which was the first process? This is currently under discussion. Some people have also recently proposed that actually the nobelist Irvin Langmuir would have done ALD, much earlier – when and how, I think the details have not been brought up. Discussion on the history is popping up every now and then, because the history is poorly described. It would be valuable for the whole scientific ALD community, to have a widely accepted description of the early development of ALD. Creating such a description is a task is larger than any single individual can do, because we all look at the facts from our own background and narrow perspective. To create a common view on the history of ALD, we have started a totally open, collaborative project, where we hope to get scientists from different backgrounds participate and work together.We have been thinking how to realize such a project, and we think we have found a way that works. An open invitation to participate has recently been published at the internet site aldpulse.com.
ALD is a fantastic technique that changes, for its part, the world we live in. As for any important technological invention, it is important and interesting to know, where ALD has come from. Most people present today are probably familiar with the invention by TuomoSuntola on Atomic Layer Epitaxy. This started the Finnish branch of ALD in 1974. In the first experiments, zinc sulfide was made from elemental precursors, in a rotary reactor (nowadays called “spacial ALD”). But how many are familiar with the work made by Aleskovskii and Kol’tsov on Molecular Layering in the Soviet Union, which started the Russian branch of ALD? These researchers worked in 1960’s, and they were there before Suntola. When exactly was ALD demonstrated there, and which was the first process? This is currently under discussion. Some people have also recently proposed that actually the nobelist Irvin Langmuir would have done ALD, much earlier – when and how, I think the details have not been brought up. Discussion on the history is popping up every now and then, because the history is poorly described. It would be valuable for the whole scientific ALD community, to have a widely accepted description of the early development of ALD. Creating such a description is a task is larger than any single individual can do, because we all look at the facts from our own background and narrow perspective. To create a common view on the history of ALD, we have started a totally open, collaborative project, where we hope to get scientists from different backgrounds participate and work together.We have been thinking how to realize such a project, and we think we have found a way that works. An open invitation to participate has recently been published at the internet site aldpulse.com.
ALD is a fantastic technique that changes, for its part, the world we live in. As for any important technological invention, it is important and interesting to know, where ALD has come from. Most people present today are probably familiar with the invention by TuomoSuntola on Atomic Layer Epitaxy. This started the Finnish branch of ALD in 1974. In the first experiments, zinc sulfide was made from elemental precursors, in a rotary reactor (nowadays called “spacial ALD”). But how many are familiar with the work made by Aleskovskii and Kol’tsov on Molecular Layering in the Soviet Union, which started the Russian branch of ALD? These researchers worked in 1960’s, and they were there before Suntola. When exactly was ALD demonstrated there, and which was the first process? This is currently under discussion. Some people have also recently proposed that actually the nobelist Irvin Langmuir would have done ALD, much earlier – when and how, I think the details have not been brought up. Discussion on the history is popping up every now and then, because the history is poorly described. It would be valuable for the whole scientific ALD community, to have a widely accepted description of the early development of ALD. Creating such a description is a task is larger than any single individual can do, because we all look at the facts from our own background and narrow perspective. To create a common view on the history of ALD, we have started a totally open, collaborative project, where we hope to get scientists from different backgrounds participate and work together.We have been thinking how to realize such a project, and we think we have found a way that works. An open invitation to participate has recently been published at the internet site aldpulse.com.
ALD is a fantastic technique that changes, for its part, the world we live in. As for any important technological invention, it is important and interesting to know, where ALD has come from. Most people present today are probably familiar with the invention by TuomoSuntola on Atomic Layer Epitaxy. This started the Finnish branch of ALD in 1974. In the first experiments, zinc sulfide was made from elemental precursors, in a rotary reactor (nowadays called “spacial ALD”). But how many are familiar with the work made by Aleskovskii and Kol’tsov on Molecular Layering in the Soviet Union, which started the Russian branch of ALD? These researchers worked in 1960’s, and they were there before Suntola. When exactly was ALD demonstrated there, and which was the first process? This is currently under discussion. Some people have also recently proposed that actually the nobelist Irvin Langmuir would have done ALD, much earlier – when and how, I think the details have not been brought up. Discussion on the history is popping up every now and then, because the history is poorly described. It would be valuable for the whole scientific ALD community, to have a widely accepted description of the early development of ALD. Creating such a description is a task is larger than any single individual can do, because we all look at the facts from our own background and narrow perspective. To create a common view on the history of ALD, we have started a totally open, collaborative project, where we hope to get scientists from different backgrounds participate and work together.We have been thinking how to realize such a project, and we think we have found a way that works. An open invitation to participate has recently been published at the internet site aldpulse.com.
ALD is a fantastic technique that changes, for its part, the world we live in. As for any important technological invention, it is important and interesting to know, where ALD has come from. Most people present today are probably familiar with the invention by TuomoSuntola on Atomic Layer Epitaxy. This started the Finnish branch of ALD in 1974. In the first experiments, zinc sulfide was made from elemental precursors, in a rotary reactor (nowadays called “spacial ALD”). But how many are familiar with the work made by Aleskovskii and Kol’tsov on Molecular Layering in the Soviet Union, which started the Russian branch of ALD? These researchers worked in 1960’s, and they were there before Suntola. When exactly was ALD demonstrated there, and which was the first process? This is currently under discussion. Some people have also recently proposed that actually the nobelist Irvin Langmuir would have done ALD, much earlier – when and how, I think the details have not been brought up. Discussion on the history is popping up every now and then, because the history is poorly described. It would be valuable for the whole scientific ALD community, to have a widely accepted description of the early development of ALD. Creating such a description is a task is larger than any single individual can do, because we all look at the facts from our own background and narrow perspective. To create a common view on the history of ALD, we have started a totally open, collaborative project, where we hope to get scientists from different backgrounds participate and work together.We have been thinking how to realize such a project, and we think we have found a way that works. An open invitation to participate has recently been published at the internet site aldpulse.com.
ALD is a fantastic technique that changes, for its part, the world we live in. As for any important technological invention, it is important and interesting to know, where ALD has come from. Most people present today are probably familiar with the invention by TuomoSuntola on Atomic Layer Epitaxy. This started the Finnish branch of ALD in 1974. In the first experiments, zinc sulfide was made from elemental precursors, in a rotary reactor (nowadays called “spacial ALD”). But how many are familiar with the work made by Aleskovskii and Kol’tsov on Molecular Layering in the Soviet Union, which started the Russian branch of ALD? These researchers worked in 1960’s, and they were there before Suntola. When exactly was ALD demonstrated there, and which was the first process? This is currently under discussion. Some people have also recently proposed that actually the nobelist Irvin Langmuir would have done ALD, much earlier – when and how, I think the details have not been brought up. Discussion on the history is popping up every now and then, because the history is poorly described. It would be valuable for the whole scientific ALD community, to have a widely accepted description of the early development of ALD. Creating such a description is a task is larger than any single individual can do, because we all look at the facts from our own background and narrow perspective. To create a common view on the history of ALD, we have started a totally open, collaborative project, where we hope to get scientists from different backgrounds participate and work together.We have been thinking how to realize such a project, and we think we have found a way that works. An open invitation to participate has recently been published at the internet site aldpulse.com.