The ISSI IS61C64AL is an 8192-word by 8-bit static RAM with access times as fast as 10 ns and low power consumption. It is fabricated using ISSI's high-performance CMOS technology, which yields both high speed and low power usage. The RAM has a single 5V power supply and a simple interface with active-low write enable and chip enable controls. It is available in industry-standard 28-pin packages.
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1. The ISSI IS61C64AL is a very high-speed, low power,
8192-word by 8-bit static RAM. It is fabricated using
ISSI's high-performance CMOS technology. This
highly reliable process coupled with innovative
circuit design techniques, yields access times as
fast as 10 ns with low power consumption.
5V High-Speed Asynchronous SRAM
2. When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 150 μW (typical) with CMOS input
levels. Easy memory expansion is provided by using
one Chip Enable input, CE. The active LOW Write
Enable (WE) controls both writing and reading of the
memory. The IS61C64AL is packaged in the JEDEC
standard 28- pin, 300-mil SOJ, and TSOP.
5V High-Speed Asynchronous SRAM
3. 5V High-Speed Asynchronous SRAM
FEATURES :
• High-speed access time: 10 ns
• CMOS low power operation
— 1 mW (typical) CMOS standby
— 125 mW (typical) operating
• TTL compatible interface levels
• Single 5V power supply
• Fully static operation: no clock or refresh
required
• Lead-free available
4. OPERATING RANGE:
Range Ambient Temperature Speed VDD(1)
Commercial 0°C to +70°C -10 5V ± 5%
Industrial –40°C to +85°C -10 5V ± 5%
CAPACITANCE(1,2):
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 8 pF
COUT Output Capacitance VOUT = 0V 10 pF
5V High-Speed Asynchronous SRAM
5. AC TEST CONDITIONS:
Parameter Unit
Input Pulse Level 0V to 3.0V
Input Rise and Fall Times 3 ns
Input and Output Timing 1.5V
and Reference Levels
Output Load See Figures 1 and 2
5V High-Speed Asynchronous SRAM