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Mahua Ghosh Chaudhuri Int. Journal of Engineering Research and Applications www.ijera.com
ISSN: 2248-9622, Vol. 6, Issue 4, (Part - 1) April 2016, pp.20-22
www.ijera.com 20|P a g e
Feasibility Study of Synthesis of Nanostructured Aluminum
Nitride Through Sol-Gel Route
Mahua Ghosh Chaudhuri
School of Materials Science & Nanotechnology, Jadavpur University, Kolkata, India
I. INTRODUCTION
Aluminum nitride is a wide band gap
semiconductor (6.2 eV) material with high thermal
conductivity, electrical resistivity, break down
voltage and low thermal expansion coefficient [1-
2]. The main applications of aluminum nitride are
in optoelectronics, as substrate and packaging
material in microelectronic devices, as a heat sink
etc. It is also used as SAW sensors owing to its
piezoelectronic properties[3].
Aluminum nitride can be produced by
different synthesis methods like – combustion
synthesis, RF plasma sputtering, metal-organic
chemical vapor deposition, pulse laser ablation
etc.[4] – [10]. However direct nitridation of
aluminum and carbothermal reduction followed by
nitridation (CTRN) of alumina are conventional
techniques for the synthesis of aluminum nitride.
Aluminum nitride powder with uniform particle
size can be produced by CTRN process and this
improves the sinterability of the material.
Moreover, AlN produced by this method is also
very pure and stable against humidity. But the main
problem with CTRN process is that it requires very
high temperature of 1400 - 18000
C and
considerably long reaction time. AlN has been
prepared form Al2O3 and carbon by Forslund and
Zheng at 16000
C after 4 hours of heat treatment in
an elevated nitrogen pressure of 0.5 MPa [11].
Spherical Al2O3 particles are reduced and nitrided
to spherical AlN by a gas mixture of NH3 and C3H8
at 15000
C [12]. Here in this paper a we report a
method of synthesis of aluminum nitride by the
carbothermal reduction followed by nitridation of
alumina gel.
II. EXPERIMENTAL TECHNIQUES
Aluminum isopropoxide (98%) and
dextrose are used as the precursor of aluminum and
carbon respectively. Aluminum iso propoxide and
dextrose are mixed in 100 ml of water and
hydrolyzed for 2 hours at 800
C. After obtaining the
white precipitate of bhoemite 0.016 moles of conc.
nitric acid is added in the solution and peptized for
46 hours at 800
C under constant stirring. The
resultant solution is left in a beaker for 7 days to
get alumina gel. The molar composition of the
alumina gel thus prepared is aluminum
isopropoxide: water is 1: 100 containing 200% of
excess stoichiometric dextrose required for the
carbothermal reduction of alumina. Dried gel
samples are heat treated in a PID controlled
furnace. The temperature of furnace was raised to
12000
- 13500
C and held at that temperature for 3
hours. After attaining the heat treatment
temperature one gel sample is placed in a charcoal
boat and pushed at the hot zone of the furnace. The
heat treatment is carried out in nitrogen
atmosphere. The heat treated samples are ground in
an agate mortar and passed through 300 mesh
sieve. XRD patterns of the powdered samples were
recorded using Rigaku Ultima III X-Ray
deffractometer with Cu Kα radiation in a
continuous scan mode from 200
- 800
. The powder
sample is placed on a conducting carbon tape and
FESEM (Hitachi made, Model no. S - 4800) is used
to observe the morphological details of the phases
present. FTIR is carried out to using Shimadzu
spectrometer (model: Prestige 21). A small amount
of ground sample is mixed with KBr and a pellet is
formed. The spectrum is obtained over 4000 – 450
cm-1
at room temperature. The spectrum of pure
KBr is used as the back ground.
III. RESULTS & DISCUSSION
Fig. 1(a) – 1(c) is the XRD pattern of the
sample heat treated at 1200, 1300 and 13500
C for 3
hours in argon atmosphere with prior repeated
evacuation and purging with nitrogen gas. Alumina
is partially converted to aluminum nitride and the
XRD pattern shows presence of both alumina and
aluminum nitride peaks when heat treated at
12000
C. Complete conversion of alumina to
aluminum nitride is achieved both at 1300 and
13500
C and only aluminum nitride peaks are
observed in the corresponding XRD pattern.
RESEARCH ARTICLE OPEN
ACCESS
Mahua Ghosh Chaudhuri Int. Journal of Engineering Research and Applications www.ijera.com
ISSN: 2248-9622, Vol. 6, Issue 4, (Part - 1) April 2016, pp.20-22
www.ijera.com 21|P a g e
Fig. 1(a): XRD pattern of the sample heat treated at
12000
C for 3 hours in nitrogen atmosphere.
Fig. 1(b): XRD pattern of the sample heat treated at
13000
C for 3 hours in nitrogen atmosphere.
Fig. 1(c): XRD pattern of the sample heat treated at
13500
C for 3 hours in nitrogen atmosphere.
Fig. 2 is the FESEM image of the sample heat
treated at 13500
C for 3 hours in nitrogen
atmosphere with prior evacuation followed by
purging with nitrogen gas. The image shows
agglomerated particles of aluminum nitride
(confirmed by XRD). The size of the nanoparticles
is in the range of 20- 50nm.
Fig. 2: SEM micro image of the sample heat treated
at 13500
C for 3 hours in nitrogen atmosphere.
Observations based on FESEM and XRD
analyses are further confirmed by FTIR
spectroscopic analysis. Fig. 3 shows the IR
spectrum of the sample with 200% excess dextrose
gel heat treated at 13500
C for 3 hours under a
constant flow of nitrogen with prior evacuation of
the furnace followed by purging with nitrogen gas.
The IR strong absorption band at 705 cm-1
correspond to the characteristics absorption bands
of Al – N [13] and this confirms the formation of
AlN. The weak band present at 3423 cm-1
corresponds to H – O bond.
Fig. 3: FTIR spectrum of the sample heat treated at
13500
C for 3 hours in nitrogen atmosphere.
IV. CONCLUSION
 Aluminum nitride can be synthesized by the
heat treatment of alumina gel in nitrogen
atmosphere at a minimum temperature of
13000
C.
 Morphology of aluminum nitride produced is
spherical with a particle size of 20 – 50nm.
REFERENCES
[1]. S. Loughin, R. H. French, W. Y. Ching,
Y. N. Xu, G. A. Slack, “Electronic
structure of aluminum nitride: Theory and
experiment”, Applied Physics Letters, 63,
1182 – 1184 (1993).
Mahua Ghosh Chaudhuri Int. Journal of Engineering Research and Applications www.ijera.com
ISSN: 2248-9622, Vol. 6, Issue 4, (Part - 1) April 2016, pp.20-22
www.ijera.com 22|P a g e
[2]. J. G. Lee, H. A. Ma, X. L. Lee, Y. J.
Zheng, G. H. Zuo, X. Jia, “Preparation
and characterization of Al/ AlN
composites sintered under high pressure”,
Journal of Materials Scienc, 42, 9460 –
9464 (2007).
[3]. M. A. Dubois and P. Muralt, “Preparation
of aluminium nitride thin films for piezo
electric transducers and microwave filter
applications”, Applied Physics Letters, 74,
3032 – 3034 (1999).
[4]. V. Rosenband, A. Gany, “Activation of
combustion synthesis of aluminum nitride
powder”, Journal of Materials Processing
Technology, 147, 197 – 203 (2004).
[5]. Z. Shi, M. Radwan, S. Kirihara, Y.
Miyamoto, Z. Jin, “Morphology
controlled synthesis of quasi aligned AlN
nano whiskers by combustion method:
Effect of ammonium chloride addition”
Ceramics International, 35, 2727 – 2733
(2009).
[6]. P. Li, S. Xi, J. Zhou, “Phase
transformation and gas solid reaction of
alumina during high energy ball milling in
nitrogen atmosphere”, Ceramics
International, 35, (247) (2009).
[7]. Yamada M, Yasui T, Fukumoto M,
Takahashi K, Thin Solid Films 2007, 515,
4166
[8]. Mele A, Giardini A, Palma T M D,
Flamini C, Okabe H and Teghil R,
International Journal of Photoenergy
2001, 3
[9]. K. Kubo, K. Itatani, F. Scott F. S. Howell,
A. Kishioka, M. Kinoshita, “Some
properties of aluminium-nitride powder
prepared by metal-organic chemical
vapour deposition”, Journal of the
European Ceramic Society 15, 661-666
(1995).
[10]. J. Chakraborty, S. Mukherjee, P. M.
Raole, P. I. John, “Feasibility study of
aluminium nitride formation by nitrogen
plasma source ion implantation on
aluminium” Materials Science and
Engineering A 304, 910 – 913 (2001).
[11]. B. Forslund, J. Zheng, “Carbothermal
synthesis of aluminium nitride at elevated
nitrogen pressures Part I Effect of process
parameters on conversion rate”, Journal of
Materials Science, 28, 3125 – 3131
(1993).
[12]. T. Suehiro, J. Tatami, T. Meguro, S.
Matsuo, K. Komeya, “Synthesis of
spherical AlN particles by gas-reduction-
nitridation method”, Journal of the
European Ceramic Society, 22, 521 – 526
(2002).
[13]. V. G. Gilev, “IR Spectra and Structure of
Si–Al–O–N Phases Prepared by
Carbothermal Reduction of Kaolin in
Nitriding Atmosphere”, Inorganoc
Materials, 37, 1041 – 45 (2001).

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Feasibility Study of Synthesizing Nano Aluminum Nitride via Sol-Gel Route

  • 1. Mahua Ghosh Chaudhuri Int. Journal of Engineering Research and Applications www.ijera.com ISSN: 2248-9622, Vol. 6, Issue 4, (Part - 1) April 2016, pp.20-22 www.ijera.com 20|P a g e Feasibility Study of Synthesis of Nanostructured Aluminum Nitride Through Sol-Gel Route Mahua Ghosh Chaudhuri School of Materials Science & Nanotechnology, Jadavpur University, Kolkata, India I. INTRODUCTION Aluminum nitride is a wide band gap semiconductor (6.2 eV) material with high thermal conductivity, electrical resistivity, break down voltage and low thermal expansion coefficient [1- 2]. The main applications of aluminum nitride are in optoelectronics, as substrate and packaging material in microelectronic devices, as a heat sink etc. It is also used as SAW sensors owing to its piezoelectronic properties[3]. Aluminum nitride can be produced by different synthesis methods like – combustion synthesis, RF plasma sputtering, metal-organic chemical vapor deposition, pulse laser ablation etc.[4] – [10]. However direct nitridation of aluminum and carbothermal reduction followed by nitridation (CTRN) of alumina are conventional techniques for the synthesis of aluminum nitride. Aluminum nitride powder with uniform particle size can be produced by CTRN process and this improves the sinterability of the material. Moreover, AlN produced by this method is also very pure and stable against humidity. But the main problem with CTRN process is that it requires very high temperature of 1400 - 18000 C and considerably long reaction time. AlN has been prepared form Al2O3 and carbon by Forslund and Zheng at 16000 C after 4 hours of heat treatment in an elevated nitrogen pressure of 0.5 MPa [11]. Spherical Al2O3 particles are reduced and nitrided to spherical AlN by a gas mixture of NH3 and C3H8 at 15000 C [12]. Here in this paper a we report a method of synthesis of aluminum nitride by the carbothermal reduction followed by nitridation of alumina gel. II. EXPERIMENTAL TECHNIQUES Aluminum isopropoxide (98%) and dextrose are used as the precursor of aluminum and carbon respectively. Aluminum iso propoxide and dextrose are mixed in 100 ml of water and hydrolyzed for 2 hours at 800 C. After obtaining the white precipitate of bhoemite 0.016 moles of conc. nitric acid is added in the solution and peptized for 46 hours at 800 C under constant stirring. The resultant solution is left in a beaker for 7 days to get alumina gel. The molar composition of the alumina gel thus prepared is aluminum isopropoxide: water is 1: 100 containing 200% of excess stoichiometric dextrose required for the carbothermal reduction of alumina. Dried gel samples are heat treated in a PID controlled furnace. The temperature of furnace was raised to 12000 - 13500 C and held at that temperature for 3 hours. After attaining the heat treatment temperature one gel sample is placed in a charcoal boat and pushed at the hot zone of the furnace. The heat treatment is carried out in nitrogen atmosphere. The heat treated samples are ground in an agate mortar and passed through 300 mesh sieve. XRD patterns of the powdered samples were recorded using Rigaku Ultima III X-Ray deffractometer with Cu Kα radiation in a continuous scan mode from 200 - 800 . The powder sample is placed on a conducting carbon tape and FESEM (Hitachi made, Model no. S - 4800) is used to observe the morphological details of the phases present. FTIR is carried out to using Shimadzu spectrometer (model: Prestige 21). A small amount of ground sample is mixed with KBr and a pellet is formed. The spectrum is obtained over 4000 – 450 cm-1 at room temperature. The spectrum of pure KBr is used as the back ground. III. RESULTS & DISCUSSION Fig. 1(a) – 1(c) is the XRD pattern of the sample heat treated at 1200, 1300 and 13500 C for 3 hours in argon atmosphere with prior repeated evacuation and purging with nitrogen gas. Alumina is partially converted to aluminum nitride and the XRD pattern shows presence of both alumina and aluminum nitride peaks when heat treated at 12000 C. Complete conversion of alumina to aluminum nitride is achieved both at 1300 and 13500 C and only aluminum nitride peaks are observed in the corresponding XRD pattern. RESEARCH ARTICLE OPEN ACCESS
  • 2. Mahua Ghosh Chaudhuri Int. Journal of Engineering Research and Applications www.ijera.com ISSN: 2248-9622, Vol. 6, Issue 4, (Part - 1) April 2016, pp.20-22 www.ijera.com 21|P a g e Fig. 1(a): XRD pattern of the sample heat treated at 12000 C for 3 hours in nitrogen atmosphere. Fig. 1(b): XRD pattern of the sample heat treated at 13000 C for 3 hours in nitrogen atmosphere. Fig. 1(c): XRD pattern of the sample heat treated at 13500 C for 3 hours in nitrogen atmosphere. Fig. 2 is the FESEM image of the sample heat treated at 13500 C for 3 hours in nitrogen atmosphere with prior evacuation followed by purging with nitrogen gas. The image shows agglomerated particles of aluminum nitride (confirmed by XRD). The size of the nanoparticles is in the range of 20- 50nm. Fig. 2: SEM micro image of the sample heat treated at 13500 C for 3 hours in nitrogen atmosphere. Observations based on FESEM and XRD analyses are further confirmed by FTIR spectroscopic analysis. Fig. 3 shows the IR spectrum of the sample with 200% excess dextrose gel heat treated at 13500 C for 3 hours under a constant flow of nitrogen with prior evacuation of the furnace followed by purging with nitrogen gas. The IR strong absorption band at 705 cm-1 correspond to the characteristics absorption bands of Al – N [13] and this confirms the formation of AlN. The weak band present at 3423 cm-1 corresponds to H – O bond. Fig. 3: FTIR spectrum of the sample heat treated at 13500 C for 3 hours in nitrogen atmosphere. IV. CONCLUSION  Aluminum nitride can be synthesized by the heat treatment of alumina gel in nitrogen atmosphere at a minimum temperature of 13000 C.  Morphology of aluminum nitride produced is spherical with a particle size of 20 – 50nm. REFERENCES [1]. S. Loughin, R. H. French, W. Y. Ching, Y. N. Xu, G. A. Slack, “Electronic structure of aluminum nitride: Theory and experiment”, Applied Physics Letters, 63, 1182 – 1184 (1993).
  • 3. Mahua Ghosh Chaudhuri Int. Journal of Engineering Research and Applications www.ijera.com ISSN: 2248-9622, Vol. 6, Issue 4, (Part - 1) April 2016, pp.20-22 www.ijera.com 22|P a g e [2]. J. G. Lee, H. A. Ma, X. L. Lee, Y. J. Zheng, G. H. Zuo, X. Jia, “Preparation and characterization of Al/ AlN composites sintered under high pressure”, Journal of Materials Scienc, 42, 9460 – 9464 (2007). [3]. M. A. Dubois and P. Muralt, “Preparation of aluminium nitride thin films for piezo electric transducers and microwave filter applications”, Applied Physics Letters, 74, 3032 – 3034 (1999). [4]. V. Rosenband, A. Gany, “Activation of combustion synthesis of aluminum nitride powder”, Journal of Materials Processing Technology, 147, 197 – 203 (2004). [5]. Z. Shi, M. Radwan, S. Kirihara, Y. Miyamoto, Z. Jin, “Morphology controlled synthesis of quasi aligned AlN nano whiskers by combustion method: Effect of ammonium chloride addition” Ceramics International, 35, 2727 – 2733 (2009). [6]. P. Li, S. Xi, J. Zhou, “Phase transformation and gas solid reaction of alumina during high energy ball milling in nitrogen atmosphere”, Ceramics International, 35, (247) (2009). [7]. Yamada M, Yasui T, Fukumoto M, Takahashi K, Thin Solid Films 2007, 515, 4166 [8]. Mele A, Giardini A, Palma T M D, Flamini C, Okabe H and Teghil R, International Journal of Photoenergy 2001, 3 [9]. K. Kubo, K. Itatani, F. Scott F. S. Howell, A. Kishioka, M. Kinoshita, “Some properties of aluminium-nitride powder prepared by metal-organic chemical vapour deposition”, Journal of the European Ceramic Society 15, 661-666 (1995). [10]. J. Chakraborty, S. Mukherjee, P. M. Raole, P. I. John, “Feasibility study of aluminium nitride formation by nitrogen plasma source ion implantation on aluminium” Materials Science and Engineering A 304, 910 – 913 (2001). [11]. B. Forslund, J. Zheng, “Carbothermal synthesis of aluminium nitride at elevated nitrogen pressures Part I Effect of process parameters on conversion rate”, Journal of Materials Science, 28, 3125 – 3131 (1993). [12]. T. Suehiro, J. Tatami, T. Meguro, S. Matsuo, K. Komeya, “Synthesis of spherical AlN particles by gas-reduction- nitridation method”, Journal of the European Ceramic Society, 22, 521 – 526 (2002). [13]. V. G. Gilev, “IR Spectra and Structure of Si–Al–O–N Phases Prepared by Carbothermal Reduction of Kaolin in Nitriding Atmosphere”, Inorganoc Materials, 37, 1041 – 45 (2001).