SPICE MODEL of 2SC1815 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:BIPOLAR JUNCTION TRANSISTOR
PART NUMBER:2SC1815
MANUFACTURER:TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

2. Pspice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

6. C-B Capacitance Characteristic
Measurement
Simulation
E-B Capacitance Characteristic
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

7. BJT Ic-hFE characteristics
Circuit simulation result
Evaluation circuit
Q2
Q2SC1815
6Vdc V1
I1
2mAdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

8. Comparison Graph
Circuit simulation result
Simulation result
hFE
Ic(A) %Error
Measurement Simulation
0.001 184.67 185.39 0.389884659
0.002 183.48 183.83 0.190756486
0.005 179.85 182.07 1.234361968
0.01 177.3 179.38 1.173152848
0.02 173.01 174.15 0.65892145
0.05 159.86 158.04 1.138496184
0.1 126.42 126.04 0.30058535
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

9. BJT Vce(sat) voltage & Vbe(sat) voltage Characteristics
Circuit simulation result
Evaluation circuit
I2
10mAdc
Q1
Q2SC1815
I1
1mAdc
0
Simulation result
Test condition: IC/IB = 10, IC=100mA
Vce(sat)(V) Vbe(sat)(V)
Measurement Simulation Error(%) Measurement Simulation Error(%)
0.1 0.099 1 1[max] 0.747 -
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

10. Output Characteristics
Circuit simulation result
IB=1.5mA
IB=1mA
IB=0.5mA
IB=0
Evaluation circuit
Q1
Q2SC1815
10Vdc V1
I1
120uAdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004