This document lists publications and presentations by K. Min and others. It includes 24 publications in journals from 1989-2005 on topics related to materials science and semiconductor fabrication. It also lists 32 presentations given by K. Min and collaborators at domestic and international conferences from 1988-2000 on similar topics such as ion implantation, thin film growth, and surface analysis techniques. The publications and presentations cover over a decade of research focused on materials characterization and processing methods.

1. List of Publications
1. D.S. Yoo, S.Y. Chung, C. Park, K. Min and U. Kim, “Epitaxial Growth of Single Crystal
Silicon by co2 Laser CVD using SiH4 Gas”, Journal of Korea Physical Society 22 (1989)
208.
3. D.S. Min, D.S. Jum, S. Cho, Y. Seok, Y. Kim, K. Min, J. Han, J. Roh, O.H. Kwon, D. Jin, Y.E.
Park, “Temperature-compensation CircuitTechniques for High-DensityCMOS DRAMs”,
Digest of Technical Papers, Symposium on VLSI Circuits (1991) 125.
4. K. Min, Y.W. Beag, M. Inoue, R. Shimizu, H. Yamauchi and H. Takahashi, “A New
Apparatus for Ion Assisted Surface Modification - Construction of Apparatus”,
Technology Reports of the Osaka University 43 (1993) 175.
5. Y.W. Beag, K. Min, M. Inoue, M. Kiuchi, K. Fujii and R. Shimizu, “Reflection High Energy
Electron Diffraction Observation of Dynamic Ion Beam Mixing Process in Titanium
Nitride Crystal Growth”, Japan Journal of Applied Physics 32 (1993) 4714.
7. K. Min, M. Tarutani, M. Inoue and R. Shimizu, “Ion Assisted Crystal Growth by Post
Irradiation as Applied to Nitride Formation”, Japan Journal of Applied Physics 33 (1994)
3566.
13. Y. Irokawa, R. Mitsuhashi, S.C. Lee, K. Min, M. Inoue, Y. Kimura and R. Shimizu,
“Surface Structure of Zr-O/W(100) System at 1700K”, Japan Journal of Applied Physics
35 (1996) 4042.
16. K. Min, M. Nakamura and K. Yoshihara, “Reduction of SiO2 Film by Electron Beam
Irradiation”, Journal of Surface Analysis, 3 (1997) 39 (in Japanese).
17. S. Hofmann, K. Min and J. Schubert, “Depth Profiling: High Accuracy Profile
Reconstruction using Experimental and Theoretical Depth Resolution Functions”,
Proceedings of European Conference on Applications of Surface and Interface Analysis
(ECASIA'97), edited by I. Olefjord, L. Nyborg and D. Briggs (Wiley, Chichester, 1997)
447.
18. D.H. Lee, Y.S. Sohn, K. Min, S.W. Jin, S.K. Lee and D.J. Ahn, “High Quality Shallow p+-
n Junction Formation by Employing BF2/Low Energy Boron Mixed Ion Implant Process”.
Proceedings of XIIth International Conference on Ion Implantation Technology (IIT'98),
edited by J. Matsuo, G. Takaoka and I. Yamada (IEEE, 1999) 83.
19. S.K. Hong, S.H. Jeon, K. Min, Y.S. Sohn. S.K. Lee and D.J. Ahn, “Effect of Photo-Resist
Treatment on Out-Gassing in High Energy Implantation”, Proceedings of XIIth
International Conference on Ion Implantation Technology (IIT'98),edited by J. Matsuo,
G. Takaoka and I. Yamada (IEEE, 1999) 494.
20. K. Min, Y.S. Sohn, S.Y. Lee, H.S. Yang and S.K. Lee “Wafer Problems in High Energy

2. Application”, Proceedings of 6th International Conference on VLSI and CAD (ICVC-6),
edited by J.M. Hwang (IEEE, 1999) 514.
21. S.Y. Hong, T.E. Hong, J.P. Lee, M.N. Yoon, K. Min and S.Y. Lee, “Relative Sensitivity
Factor Reproducibility with Magnetic Sector Type SIMS”, Proceedings of 12th
International Conference on Secondary Ion Mass Spectroscopy (SIMS12), edited by A.
Benninghoven, P. Bertrand, H-N. Migeon and H.W. Werner (Elsevier, 2000) 385.
22. Y.B. Park, K. Min, K.J. Cho, S.Heo, C.H. Lim, M.K. Lee, T.K Lee, H.J. Kim, S.Y. Lee and
Y.W. Kim, “Influence of Ar+ Ion Bombardment on the Chemical States of SrBi2Ta2O9
Thin Films Fabricated by Metal-Organic Decomposition”, Journal of Vacuum Science
and Technology A, 19 (2001) 916.
23. HS Chang, SM Choi, HD Kang, K. Min, DW. Mon and HI Lee, “Effect of Si lattice strain
on the reliability characteristics of ultrathin SiO2 on a 4° tilted wafer, Applied Physics
Letters, 1 (2002) 386.
24. J. Gookassian, B. Pack, M. Heins, J. Garcia, H. Divecha, B. Gorden, D. Frazier, D. L.
White, G. Lachinyan, B. Dillon, C. Suzor, A. Adamov, K. Min, S. Bakarian, R. Marutyan
and V. Boksha, “Building an Infrastructure for Parametric Yield Analysis: Concept and
Implementation of a DFM Platform”, SPIE Proceedings 5756 (2005) 208.

3. Presentation List of Domestic and International Conferences
1. K. Min and S.T. Kang, “Estimation of Monte-Carlo Simulation”, Extended Abstracts of
the Korea Physics Society, 1988.
2. D.S. Min, D.S. Jum, S. Cho, Y. Seok, Y. Kim, K. Min, J. Han, J. Roh, O.H. Kwon, D. Jin, Y.E.
Park, “Temperature-compensation CircuitTechniques for High-DensityCMOS DRAMs”,
Symposium on VLSI Circuits (1991).
3. K. Min, Y.W. Beag, Y. Kimura, R. Shimizu, H. Yamauchi and H. Takahashi, “Development
of Apparatus for Dynamic Mixing Method”, Extended Abstracts (The 40th Spring
Meeting, 1993); The Japan Society of Applied Physics and Related Societies.
4. K. Min, Y.W. Beag, M. Inoue and R. Shimizu, “Microprobe Ion-Assisted Crystal Growth
as Applied to Nitride Formation”, 8th International Conference on Surface
Modification on Metals by Ion Beams (SMMIB-8), Kanazawa,Japan, September 13-17,
1993.
5. K. Min, M. Tarutani, Y.W. Beag, M. Inoue and R. Shimizu, “Study on Crystallization of
TiN Films by PostIrradiation Processing”,Extended Abstracts (The 41st Spring Meeting,
1994); The Japan Society of Applied Physics and Related Societies.
6. T. Nagatomi, K. Min, C.F. Li, Y.W. Beag and R. Shimizu, “Preferential Sputtering in Cu-Pt
Alloy: Angular Distribution of Sputtered Particles”, Extended Abstracts (The 41st
Spring Meeting, 1994); The Japan Society of Applied Physics and Related Societies.
7. Y.W. Beag, M. Tarutani, K. Min, Y. Takai and R. Shimizu, “Surface and Interface
Observation of TiN Films by Dynamic Ion Beam Mixing Method”, Extended Abstracts
(The 41st Spring Meeting, 1994); The Japan Society of Applied Physics and Related
Societies.
8. T. Nagatomi, K. Min and R. Shimizu, “Angular Distribution of Sputtered Particles from
Cu-Pt alloy and Pt” Extended Abstracts (The 55th Autumn Meeting, 1994); The Japan
Society of Applied Physics.
9. K. Min, C.F. Li, T. Asahataand R. Shimizu, “Dynamic Process of Altered Layer Formation
in Alloy Surface [1] Monte-Carlo Simulation in Cu-Pt Alloy”, Extended Abstracts (The
55th Autumn Meeting, 1994); The Japan Society of Applied Physics.
10. M. Tarutani, K. Min, Y. Takaiand R.Shimizu, “DiscussiononFIB Process in Preparation
of TEM Sample”, Extended Abstracts (The 55th Autumn Meeting, 1994); The Japan
Society of Applied Physics.
11. K. Min, Y. Suzuki, M. Inoue and R. Shimizu, “Correlation between Sputtering Yield
and Titanium Nitride Film Growth inIon BeamAssistedDepositionand PostIrradiation
Process”,9th International Conference on Ion BeamModification of Materials (IBMM-

4. 9),
Canbera, Australia, February 5-10, 1995.
12. R. Shimizu, C.F. Li and K. Min, “Discussion on Theory and Effect of Ion Beam
Irradiation”, Extended Abstracts of Japan Journal of Molding Society, 1995.
13. R. Mitsuhashi, K. Min, M. Inoue and R. Shimizu, ”Study on TiN Films Formation by
Nitrogen Ion BeamIrradiation”, Extended Abstracts (The 56th Autumn Meeting, 1995);
The Japan Society of Applied Physics.
14. S. Hofmann, R. Shimizu and K. Min, “Quantitative Depth Profiling using GaAs/AlAs
Superlattice Structures”, 13th International Vacuum Congress (IVC-13) & 9th
International Conference on Solid Surface (ICSS-9), Yokohama, Japan, September 25-
29, 1995.
15. K. Min, Y. Kimura, R. Shimizu and S. Hofmann, “Titanium Nitride Film Formation in
Post Irradiation Processing”, 13th International Vacuum Congress (IVC-13) & 9th
International Conference on Solid Surface (ICSS-9), Yokohama, Japan, September 25-
29, 1995.
16. K. Min, K. Yoshihara and R. Shimizu, “Study on Surface Structure of Ion ProcessedTiN
Films”, Extended Abstracts of 4th Japan Surface Analysis Meeting, 1996.
17. K. Min, K. Yoshihara and R. Shimizu, “Surface Structure of TiN Films by Ion Beam
Processing”, Extended Abstracts of 10th Korea Vacuum Society, 1996.
18. K. Min, K. Kasahara, K. Yoshihara, S. Hofmann and R. Shimizu, “Surface Structure of
Ion Beam Processed and rf-Sputtered TiN Films”, Extended Abstracts of 37th Japan
Journal of Vacuum Society, 1996.
19. K. Min, S. Hofmann and R. Shimizu, “Correlation of Surface Structure and Strain in
Ion Beam Processed TiN Films”, 10th International Conference on Thin Films (ICTF-10)
& 5th European Vacuum Conference (EVC-5), Salamanca, Spain, September 23-27,
1996.
20. D.H. Lee, Y.S. Sohn, K. Min, S.W. Jin, S.K. Lee and D.J. Ahn, “High Quality Shallow p+-
n Junction Formation by Employing BF2/Low Energy Boron Mixed Ion Implant Process”.
12th International Conference on Ion Implantation Technology (IIT'98), Kyoto, Japan,
June 22-26, 1998.
21. S.K. Hong, S.H. Jeon, K. Min, Y.S. Sohn. S.K. Lee and D.J. Ahn, “Effect of Photo-Resist
Treatment on Out-Gassing in High Energy Implantation”, 12th International
Conference on Ion Implantation Technology (IIT'98), Kyoto, Japan, June 22-26, 1998.
22. K. Min, S.W. Jin, Y.T. Kong, Y.S. Sohn, H.S. Yang and K. Yoshihara, “Characterization of
SiO2 Reduction by Electron Beam Irradiation”, Extended Abstracts of 6th Korean
Conference on Semiconductor, 1999.

5. 23. K. Min, C.G. Kim, J.H. Kim and S.Y. Lee, “Current Problems of High Energy Application
in Memory Device Fabrication”, Extended Abstracts of 17th Korea Vacuum Society,
1999.
24. S. Heo, Y.P. Park, K. Min and S.Y. Lee, “Study on Auger Peak Shift of Si by Ion
Implantation and ChemicalShift of Titanium RelatedCompounds”, Extended Abstracts
of 17th Korea Vacuum Society, 1999.
25. C.H. Lim, J.Y. Kim, S.Y. Hong, K. Min and S.Y. Lee, “Characterization of Growing Oxide
Layer on Si by Ion Implantation”, Extended Abstracts of 17th Korea Vacuum Society,
1999.
26. Y.P. Park, S.Heo, J.Y. Kim, K. Min and S.Y. Lee, “Quantification of SBT Layer in AES”,
Extended Abstracts of 17th Korea Vacuum Society, 1999.
27. S.Y. Hong, J.P. Lee, T.E. Hong, M.N. Yoon, K. Min and S.Y. Lee, “Study on Relative
Sensitivity Factor Variation with Magnetic Sector Type SIMS”, Extended Abstracts of
17th Korea Vacuum Society, 1999.
28. S.Y. Hong, J.P. Lee, T.E. Hong, M.N. Yoon, K. Min and S.Y. Lee, “Study on Relative
Sensitivity Factor Variation with Magnetic Sector Type SIMS by Statistical Approach”,
Extended Abstracts of 17th Korea Vacuum Society, 1999.
29. S.Y, Hong, T.E. Hong, J.P. Lee, M.N. Yoon, K. Min and S.Y. Lee, “Relative Sensitivity
Factor Reproducibility with Magnetic Sector Type SIMS”, 12th International
Conference on Secondary Ion Mass Spectroscopy (SIMS12), Brussels, Belgium,
September 5-10, 1999.
30. K. Min, Y.S. Sohn, S.Y. Lee, H.S. Yang and S.K. Lee “Current Problems of High Energy
Application in Memory Device Fabrication” 6th International Conference on VLSI and
CAD (ICVC-6), Seoul, Korea, October 26-27, 1999.
31. S. Heo, Y.B. Park, H.J. Kim, S.Y. Lee and K. Min, “Study on Oxide Reduction by Electron
Beam with Auger Electron Spectroscopy” Extended Abstracts of 19th Korea Vacuum
Society, 2000.
32. K. Min, C.W. Ryoo, C.G. Koh, M.K. Lee, Y.H. Kim, J.O. Kim and S.H. Jang, “Estimation
of Tilted Wafer in Ion Implantation Process”, 13th International Conference on Ion
Implantation Technology (IIT-2000), Tyrol, Austria, September 17-22, 2000.
33. K. Min, C.W. Ryoo, J.P. Lee, S.Y. Lee and S.H. Jang, “Estimation of Boron Segregation
by Arsenic Implantation”, 13th International Conference on Ion Implantation
Technology (IIT-2000), Tyrol, Austria, September 17-22, 2000.
34. M.K. Lee, P. Dewolf, R. Alvis, W.S. Yang, C.H. Lim, S. Heo, T.K. Lee, Y.B. Park, H.J. Kim,
K. Min and S.Y. Lee, “The Observation of Ferroelectric Domains using Scanning
Capacitance Microscope”, 47th International Symposium of the American Vacuum

6. Society (AVS), Boston, USA, October 2-6, 2000.
35. Y.B. Park, K. Min, K.J. Cho, S. Heo, C.H. Lim, M.K. Lee, H.J. Kim and S.Y. Lee, “Influence
of Ar+ Ion Bombardment on the Chemical States of SrBi2Ta2O9 Thin Films Fabricated
by Metal-Organic Decomposition”, 47th International Symposium of the American
Vacuum Society (AVS), Boston, USA, October 2-6, 2000.
36. K. Min, “Characterization of SrBi2Ta2O9 Thin Films by X-ray Photoelectron
Spectroscopy”, 3rd Korea-Japan International Symposium on Surface Analysis,KyungJu,
Korea, November 2-3, 2000 (Invited Talk).
37. J. Gookassian, B. Pack, M. Heins, J. Garcia, H. Divecha, B. Gorden, D. Frazier, D. L.
White, G. Lachinyan, B. Dillon, C. Suzor, A. Adamov, K. Min, S. Bakarian, R. Marutyan
and V. Boksha, “Building an Infrastructure for Parametric Yield Analysis: Concept and
Implementation of a DFM Platform”, SPIE Microlithography (Invited Paper), 27 Feb – 4
March 2005, San Jose, CA.
38. D. L. White, V. Axelrad, B. Dillon, S. Bakarian, J. Garcia, M. Heins, K. Min, “Design
impact: an innovative approach to parametric yield improvement”, SPIE
Microlithography, 27 Feb – 4 March 2005, San Jose, CA.

7. Patent Lists
1. Patent #: 069651 (Korea), Date of Patent: Jan. 10, 1994
Patent #: US5319605 (US), Date of Patent: June 7, 1994
K. Min, “Arrangement of Word Line Driver Stage for Semiconductor Memory
Device”
2. Patent #: 079486 (Korea), Date of Patent: Nov. 22, 1994
K. Min, “Arranging Method of Semiconductor Device Array”
3. Patent #: 082630 (Korea), Date of Patent: Feb. 22, 1995
K. Min, “Semiconductor Memory Device”
4. Patent #: 092173 (Korea), Date of Patent: Nov. 28, 1995
Patent #: US5402378 (US), Date of Patent: March 28, 1995
K. Min, “Circuit for generating a Clock Signal to Separate Bit Lines in a
Semiconductor Memory Device”
5. Patent #: 262529 (Korea), Date of Patent: May 2, 2000
K. Min, “Fabrication Method of Semiconductor Device”
6. Appl. No: 1997-081151 (Korea), Filed: Dec. 31, 1997
K. Min, “Fabrication Method of Semiconductor Device”
7. Appl. No: 1997-081164 (Korea), Filed: Dec. 31, 1997
K. Min, “Fabrication Method of Metal Line in Semiconductor Device
8. Appl. No: 1998-021539 (Korea), 11-160632 (Japan), 88109524 (Taiwan), 09/329026
(USA)
K. Min, “Fabrication Method of Semiconductor Equipment”
9. Appl. No: 1998-024587 (Korea), Filed: June 27, 1998
K. Min, “Fabrication Method of Semiconductor Equipment”
10. Appl. No: 1998-025635 (Korea), Filed: June 30, 1998
K. Min, “Fabrication Method of Semiconductor Device Transistor”
11. Appl. No: 1998-057442 (Korea), Filed: Dec. 23, 1998
K. Min, “Fabrication Method of Wafer Holder of Ion Implanter”
12. Appl. No: 1998-062485 (Korea), Filed: Dec. 30, 1998
K. Min, “Fabrication Method of Semiconductor Device Transistor”
13. Appl. No: 1999-025514 (Korea), Filed: June 29, 1999
K. Min, “Method of Wafer Fabrication”
14. Appl. No: 1999-046421 (Korea), Filed: Oct. 25, 1999
K. Min, “Fabrication Method of BILLI Structure in Semiconductor Device”