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International Journal of Modern Engineering Research (IJMER)
                 www.ijmer.com             Vol.2, Issue.4, July-Aug. 2012 pp-2307-2310      ISSN: 2249-6645

                The Effects of Different Temperatures and Temperature
                Cycling on Breakdown Voltages of Tantalum Capacitors

                                                        Johanna Virkki
                              Department of Electronics/Tampere University of Technology, Finland


ABSTRACT: This study focuses on the effects of different            devices [2, 3].“ The standard HTSL test is run for 1000
temperatures and temperature cycling on breakdown                   hours (42 days) and the standard LTSL test for 168 hours (7
voltages of tantalum capacitors. High and low temperature           days) [2, 3]. During the tests, increased/reduced
tests and temperature cycling tests were done. In all tests         temperatures (test conditions) are used without electrical
the used temperatures were inside component’s operating             stress.
temperature limits. After the tests, capacitors were tested for               Temperature cycling, according to the standard
their breakdown voltage. According to results of this               JESD22-A104D, “is conducted to determine the ability of
research, high or low temperature testing inside                    components and solder interconnects to withstand
component’s operating temperature limits does not have an           mechanical stresses induced by alternating high- and low-
effect on the breakdown voltage of tantalum capacitors.             temperature extremes. Permanent changes in electrical
However, temperature cycling inside component’s operating           and/or physical characteristics can result from these
temperature limits can lower the breakdown voltage of               mechanical stresses [4].” This standard test includes
tantalum capacitors.                                                numerous temperature cycling conditions. The test usually
                                                                    lasts 500 or 1000 cycles.
Keywords: accelerated testing, reliability, tantalum                          These standard accelerated tests are commonly
capacitors, temperature, temperature cycling                        used for testing reliability of electronics and were used in
                                                                    this research. The object of this research was to test the
                  I. INTRODUCTION                                   effects of low temperature, high temperature, and the
In today’s competitive market, it is important for a                effects of temperature cycling on tantalum capacitors.
company to know the reliability of its products and to be
able to control it for continued production at optimum                           II. TANTALUM CAPACITORS
reliability. Sometimes there is a need to examine the               Surface mount solid tantalum capacitors (henceforth
performance of a specific electronic component: it may be           referred to as “tantalum capacitors”, shown in Fig. 1) of a
radically redesigned, or there may be an individual                 maximum voltage of 50V, a capacitance of 10μF, and an
reliability specification for that component. That is why           operating and non-operating temperature of -55˚C to 125˚C
reliability testing of components has become a concern for          were used in this research. The structure of these capacitors
electronics manufacturers. Also, in many cases, component-          is presented more detailed in Fig 2.
level reliability testing is undertaken to begin characterizing
a product's reliability when full system-level test units are
unavailable.
          Electronic components are often stored and used at
high or low temperatures, and sometimes temperature can
change radically during component’s lifetime. Temperature
and temperature changes can have various, often
unpredictable effects on components. Reliability tests seek
to simulate the component’s use environment in order to
find the effects of environmental stresses. Because such
testing is very time-consuming, accelerated testing becomes
necessary. Accelerated testing is a procedure in which
conditions are intensified to cut down the time required to
obtain a weakening effect similar to one encountered in             Figure 1. Bottom side of a surface mount tantalum capacitor
normal service conditions [1].                                                         used in this research.
          High Temperature Storage Life (HTSL), JESD22-
A103C, and Low Temperature Storage Life (LTSL),                     A. Structure of tantalum capacitors
JESD22-A119, tests “are applicable for evaluation,                  A tantalum capacitor (structure shown in Fig. 2) consists of
screening, monitoring, and/or qualification of all solid state      three main elements: anode, cathode, and a dielectric layer
devices and typically used to determine the effect of time          of tantalum pentoxide that separates them. The capacitor
and temperature, under storage conditions, for thermally            contains an embedded tantalum pellet (anode), surrounded
activated failure mechanisms of solid state electronic              by a tantalum pentoxide, amorphous dielectric layer. The
                                                        www.ijmer.com                                                2307 | Page
International Journal of Modern Engineering Research (IJMER)
                 www.ijmer.com             Vol.2, Issue.4, July-Aug. 2012 pp-2307-2310      ISSN: 2249-6645
cathode is a semiconductor, manganese dioxide. This pellet            Temperature has also a specific effect inside a tantalum
is coated with carbon and then with silver to provide the             capacitor, known as crystal growth [12-14]. The tantalum
final connecting layer to the cathode terminal. The tantalum          pentoxide dielectric is considered an amorphous material.
wire passes through these layers and connects the positive            An amorphous state tends to order and crystallize to reduce
termination to the tantalum pellet. The negative termination          its internal energy. Surface impurities can induce direct
of the capacitor is attached with a silver adhesive to the            growth of tantalum pentoxide crystals and any imperfection
silver paint layer. Next sections focus on possible failure           in the dielectric structure is a potential site for crystals to
mechanisms caused by temperature and changes in it.                   grow. Once the dielectric crystallizes, conductivity and
                                                                      leakage current increase. The presence of impurities is not
                                                                      the only mechanism that may lead to a growth of crystals;
                                                                      Crystal growth can also be initiated in small areas of
                                                                      crystalline order in the dielectric. The conductivity of the
                                                                      crystallized structure has been reported to be higher than
                                                                      that of a dielectric in an amorphous state [14]. However, the
                                                                      latest findings suggest that the crystals themselves are good
                                                                      insulators with very limited conductivity [12, 13]. The exact
                                                                      conductivity mechanism related to the crystal phase is not
                                                                      yet fully understood. The increase in leakage current may
                                                                      still be caused by other mechanisms accelerated by the
                                                                      crystal growth. However, studies show that field
                                                                      crystallization may have only a limited impact on the end
                                                                      use of tantalum capacitors [12].
                                                                      The temperature cycling of tantalum capacitors has been
       Figure 2. Structure of a tantalum capacitor [5].
                                                                      studied before [11, 15] with capacitors subjected to
                                                                      temperature cycling in a range from -40°C to 85°C [15], -
B. Effects of temperature and temperature cycling on
                                                                      65°C to 125°C, and -65°C to 150°C [11]. Results indicate
tantalum capacitors
                                                                      that tantalum capacitors are capable of withstanding up to
Temperature, whether generated externally or internally,
                                                                      500 cycles of temperature ranging from -65°C to 150°C.
degrades the performance and reliability of tantalum
                                                                      However, different lots show different robustness under
capacitors. The use of tantalum capacitors at high
                                                                      cycling conditions, and though parts may not fail formally
temperatures has been studied, and manufacturing tantalum
                                                                      by exceeding specified limits, a significant degradation in
capacitors for high-temperature applications is found to be
                                                                      the leakage current and breakdown voltages indicates an
challenging [6, 7]. Mechanical stresses related to the
                                                                      increased propensity of some lots to failure after
temperature changes during reflow-manufacturing and use
                                                                      temperature cycling. Cracking in the tantalum pentoxide
of surface mount tantalum capacitors at high temperatures
                                                                      dielectric, which develops during temperature cycling,
affect their performance and reliability and can account for
                                                                      results not only in increased leakage current, but also
their breakdowns. Due to mismatch of the coefficients of
                                                                      increases the probability of scintillation breakdowns [11].
thermal expansion between the constituent materials,
                                                                      The results suggested that a harmful temperature cycling
significant mechanical stresses develop in the bulk of
                                                                      effect can be achieved in a much shorter time than in 500
materials and at the interfaces. During heating, shear forces
                                                                      cycles [15].
are exerted on the anode wire. The molded case pushes on
the lead frame in one direction and the pellet in another,
generating forces that pull the wire away from the anode                             III. RELIABILITY TESTING
structure. Once the device has passed though high                     Testing was divided into five tests, hereafter called Tests A,
temperatures and its elements are shrinking while cooling,            B, C, D, and E. Test A was a low temperature test in -40°C
they may not fit together as they did before the expansion.           temperature and lasted for 168h. Tests B and C were high
Compressive forces may appear on the pellet structure and             temperature tests, Test B was done in 85°C and Test C was
produce fractures. In addition, these stresses may cause              done in 125°C. Both tests lasted for 1000h. Tests D and E
cracking in the tantalum pentoxide dielectric and/or                  were temperature cycling tests. Both tests lasted for 500
delaminations at the interfaces, resulting in different failure       cycles and one cycle lasted for 0.5h. In test D, the
modes of the components. A crack in the dielectric at a               temperature changed between -40°C and 85°C and in Test
corner or edge, when exposed to high stress, may lead to              E, temperature changed between -40°C and 125°C. In all
failure [9-11]. The cracking increases leakage current,               tests, 18 capacitors were tested. Because the capacitors
decreases breakdown voltage, and may cause short-circuits.            were rated for an operating and non-operating temperature
On the other hand, delaminations can raise the effective              of -55˚C to 125˚C, they were tested here within their
series resistance and thus increase power dissipation and             operating limits. This was done in order to get information
temperature of the capacitor, which can decrease its                  on their usability in such field conditions and to compare
reliability. Severe delaminations may result in intermittent          the effects of different temperatures and temperature
contacts and open-circuit failures of the components [11].
                                                          www.ijmer.com                                                 2308 | Page
International Journal of Modern Engineering Research (IJMER)
                  www.ijmer.com            Vol.2, Issue.4, July-Aug. 2012 pp-2307-2310      ISSN: 2249-6645
cycling. All tests and their conditions can be seen in Table          breakdown voltage of these capacitors and such conditions
1.                                                                    should be no problem. Tests with higher temperatures (e.g.
                                                                      150˚C) and lower temperatures (e.g. -55˚C) could be tried.
         Table 1. All tests and their test conditions.                          There were 5 failures after both tests D and E. This
                                                                      means that temperature cycling inside operating
                                                                      temperature limits has an effect on breakdown voltage of
  Test        A         B        C D               E                  these tantalum capacitors. This should be taken into account
                                 -40°C           -40°C                is these capacitors need to be stored or used in such
Stresses   -40°C     85°C 125°C 85°C             125°C                conditions. However, none of the failures in any tests
                                 500 *            500*                occurred at voltages under 50V, which is capacitor´s
  Time      168h     1000h 1000h 0,5h             0,5h                maximum operating voltage. In addition, there are a lot of
                                                                      non-failed components, so there is a lot of uncertainty that
After all temperature tests, capacitors were tested for their         should be taken into account. Tests with larger amount of
breakdown voltage. The capacitors were tested for voltage             components should be done. Also, a test with more radical
that was slowly increased (rate of voltage increase: 1V per           temperature cycling (e.g. -55˚C / +150˚C) could be tried.
second) from 0V to 93V provided no failure occurred. The              Failed components were further examined. They were
voltage range was chosen because of equipment limitations.            cross-sectioned and analyzed for failure by optical
The accuracy of measurement was 1V                                    microscopy (shown in Fig. 3). Cross-sectioning of all the
                                                                      failed tantalum capacitors showed redness in corners where
            IV. RESULTS AND DISCUSSION                                overheating had burned the capacitors’ internal materials
Table 2 shows breakdown voltages for capacitors without               and molding.
testing and in Tests A-E. Accordingly, capacitors not                           Faults may occur in the oxide from stress imposed
submitted to any kind of temperature testing did not fail at          by changes in temperature. The oxide may have cracked
voltages below 93V. This means that the capacitors can be             with a slight shear. In addition, even if the pellet has not
expected to withstand voltages of over 93V.                           fractured, it may have sustained enough compressive
                                                                      pressure for a fault site in the dielectric to grow or extend
Table 2. Failure voltages for capacitors without testing and          further into the dielectric and develop into a breakdown at
                       in Tests A-E.                                  these lower voltages. Field crystallization is one possible
                                                                      failure mechanism but it may have only a limited impact in
                                                                      the temperature cycling test and its effects on breakdown
No Test Test A Test B Test C Test D Test E
                                                                      voltages.
  >93    >93    >93     86     50     57
  >93    >93    >93    >93     79     63
  >93    >93    >93    >93     81     72
   >93       >93       >93       >93       84        72
   >93       >93       >93       >93       91        89
   >93       >93       >93       >93      >93       >93
   >93       >93       >93       >93      >93       >93
   >93       >93       >93       >93      >93       >93
   >93       >93       >93       >93      >93       >93
   >93       >93       >93       >93      >93       >93
                                                                          Figure 3. An example of a cross-section of a failed
   >93       >93       >93       >93      >93       >93
                                                                                             capacitor.
   >93       >93       >93       >93      >93       >93
   >93       >93       >93       >93      >93       >93                                   V. CONCLUSION
   >93       >93       >93       >93      >93       >93               A tantalum capacitor can be used in various different
                                                                      temperatures. Also radical temperature changes occur
   >93       >93       >93       >93      >93       >93               commonly in the field. In this paper, the effects of high and
   >93       >93       >93       >93      >93       >93               low temperature, and the effects of temperature changes on
   >93       >93       >93       >93      >93       >93               breakdown voltage of tantalum capacitors were tested. Low
                                                                      temperature and high temperature tests inside component´s
   >93       >93       >93       >93      >93       >93               operating temperature limits were not found to have an
                                                                      effect on breakdown voltages of these capacitors. However,
There were no failures in Tests A and B and there was only            a temperature cycling test inside component´s operating
one failure in Test C. This means that such low temperature           temperature limits affects tantalum capacitors in that it
and high temperature did not have a significant effect on             weakens their characteristics and lowers their breakdown
                                                          www.ijmer.com                                                 2309 | Page
International Journal of Modern Engineering Research (IJMER)
                www.ijmer.com             Vol.2, Issue.4, July-Aug. 2012 pp-2307-2310      ISSN: 2249-6645
voltages. More testing work needs be done in order to             [8]    B. Long, M. Prevallet, and J.D. Prymak, Reliability
collect statistical data for conclusions. Such results would             effects with proofing of tantalum capacitors, Proc.
be useful in addition to these results, where conclusions are            Capacitor and Resistor Technology Symposium,
mostly done based on literature review.                                  2005, pp. 167-172.
                                                                  [9]    J. Marshall and J. Prymak, Surge step stress testing
                      REFERENCES                                         of tantalum capacitors, Proc. Capacitor and Resistor
[1]   D. Kececioglu, Reliability engineering handbook,                   Technology Symposium, 2001, pp. 181-187.
      vol. 1 and 2 (New Jersey, Prentice Hall, Inc., 1991)        [10]   D.M. Edson, and J.B. Fortin, Improving thermal
[2]   JEDEC standard. High Temperature Storage Life,                     shock resistance of surface mount tantalum
      JESD22-A103. Published by JEDEC Solid State                        capacitors, Proc. Capacitor and Resistor Technology
      Technology Association, Arlington, 2004.                           Symposium, 1994, pp. 169-176.
[3]   JEDEC standard. Low Temperature Storage Life,               [11]   A. Teverovsky, Effect of temperature cycling and
      JESD22-A119. Published by JEDEC Solid State                        exposure to extreme temperatures on reliability of
      Technology Association, Arlington, 2004.                           solid tantalum capacitors, NASA Electronic Parts
[4]   JEDEC standard. Temperature Cycling, JESD22-                       and Packaging (NEPP) Program, 2007, 70p.
      A104D (2009). Published by JEDEC Solid State                [12]   T. Zednicek, J. Sikula, and H. Leibovitz, A study of
      Technology Association, Arlington, 2009.                           field crystallization in tantalum capacitors and its
[5]   Solid tantalum chip capacitors, T494 SERIES–Low                    effect on DCL and reliability, Proc. Capacitor and
      ESR, Industrial grade. KEMET Electronics                           Resistor Technology Symposium, 2009, 16p.
      Corporation. Datasheet. 7p.                                 [13]   E. Atanassova and A. Paskaleva, Breakdown fields
[6]   E. Reed, Tantalum chip capacitor reliability in high               and conduction mechanisms in thin Ta2O5 layers on
      surge and ripple current applications, Proc.                       Si for high density DRAMs, Microelectronics
      Electronic Components and Technology Conference,                   Reliability, 42(2), 2002, 157-173.
      1994, pp. 861-868.                                          [14]   S. Ezhilvalavan and T.-Y. Tseng, Conduction
[7]   Y. Freeman, R. Hahn, P. Lessner, and J. Prymak,                    mechanisms in aamorphous and crystalline Ta2O5
      Reliability and critical applications of tantalum                  thin films, Journal of Applied Physics, 83(9), 1998,
      capacitors, Proc. Capacitor and Resistor Technology                4797-4801.
      Europe Symposium, 2007, 11p.                                [15]   J. Virkki and S. Tuukkanen, Testing the effects of
                                                                         temperature cycling on tantalum capacitors,
                                                                         Microelectronics Reliability, 50(8), 2010, 1121-112




                                                      www.ijmer.com                                              2310 | Page

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Bt2423072310

  • 1. International Journal of Modern Engineering Research (IJMER) www.ijmer.com Vol.2, Issue.4, July-Aug. 2012 pp-2307-2310 ISSN: 2249-6645 The Effects of Different Temperatures and Temperature Cycling on Breakdown Voltages of Tantalum Capacitors Johanna Virkki Department of Electronics/Tampere University of Technology, Finland ABSTRACT: This study focuses on the effects of different devices [2, 3].“ The standard HTSL test is run for 1000 temperatures and temperature cycling on breakdown hours (42 days) and the standard LTSL test for 168 hours (7 voltages of tantalum capacitors. High and low temperature days) [2, 3]. During the tests, increased/reduced tests and temperature cycling tests were done. In all tests temperatures (test conditions) are used without electrical the used temperatures were inside component’s operating stress. temperature limits. After the tests, capacitors were tested for Temperature cycling, according to the standard their breakdown voltage. According to results of this JESD22-A104D, “is conducted to determine the ability of research, high or low temperature testing inside components and solder interconnects to withstand component’s operating temperature limits does not have an mechanical stresses induced by alternating high- and low- effect on the breakdown voltage of tantalum capacitors. temperature extremes. Permanent changes in electrical However, temperature cycling inside component’s operating and/or physical characteristics can result from these temperature limits can lower the breakdown voltage of mechanical stresses [4].” This standard test includes tantalum capacitors. numerous temperature cycling conditions. The test usually lasts 500 or 1000 cycles. Keywords: accelerated testing, reliability, tantalum These standard accelerated tests are commonly capacitors, temperature, temperature cycling used for testing reliability of electronics and were used in this research. The object of this research was to test the I. INTRODUCTION effects of low temperature, high temperature, and the In today’s competitive market, it is important for a effects of temperature cycling on tantalum capacitors. company to know the reliability of its products and to be able to control it for continued production at optimum II. TANTALUM CAPACITORS reliability. Sometimes there is a need to examine the Surface mount solid tantalum capacitors (henceforth performance of a specific electronic component: it may be referred to as “tantalum capacitors”, shown in Fig. 1) of a radically redesigned, or there may be an individual maximum voltage of 50V, a capacitance of 10μF, and an reliability specification for that component. That is why operating and non-operating temperature of -55˚C to 125˚C reliability testing of components has become a concern for were used in this research. The structure of these capacitors electronics manufacturers. Also, in many cases, component- is presented more detailed in Fig 2. level reliability testing is undertaken to begin characterizing a product's reliability when full system-level test units are unavailable. Electronic components are often stored and used at high or low temperatures, and sometimes temperature can change radically during component’s lifetime. Temperature and temperature changes can have various, often unpredictable effects on components. Reliability tests seek to simulate the component’s use environment in order to find the effects of environmental stresses. Because such testing is very time-consuming, accelerated testing becomes necessary. Accelerated testing is a procedure in which conditions are intensified to cut down the time required to obtain a weakening effect similar to one encountered in Figure 1. Bottom side of a surface mount tantalum capacitor normal service conditions [1]. used in this research. High Temperature Storage Life (HTSL), JESD22- A103C, and Low Temperature Storage Life (LTSL), A. Structure of tantalum capacitors JESD22-A119, tests “are applicable for evaluation, A tantalum capacitor (structure shown in Fig. 2) consists of screening, monitoring, and/or qualification of all solid state three main elements: anode, cathode, and a dielectric layer devices and typically used to determine the effect of time of tantalum pentoxide that separates them. The capacitor and temperature, under storage conditions, for thermally contains an embedded tantalum pellet (anode), surrounded activated failure mechanisms of solid state electronic by a tantalum pentoxide, amorphous dielectric layer. The www.ijmer.com 2307 | Page
  • 2. International Journal of Modern Engineering Research (IJMER) www.ijmer.com Vol.2, Issue.4, July-Aug. 2012 pp-2307-2310 ISSN: 2249-6645 cathode is a semiconductor, manganese dioxide. This pellet Temperature has also a specific effect inside a tantalum is coated with carbon and then with silver to provide the capacitor, known as crystal growth [12-14]. The tantalum final connecting layer to the cathode terminal. The tantalum pentoxide dielectric is considered an amorphous material. wire passes through these layers and connects the positive An amorphous state tends to order and crystallize to reduce termination to the tantalum pellet. The negative termination its internal energy. Surface impurities can induce direct of the capacitor is attached with a silver adhesive to the growth of tantalum pentoxide crystals and any imperfection silver paint layer. Next sections focus on possible failure in the dielectric structure is a potential site for crystals to mechanisms caused by temperature and changes in it. grow. Once the dielectric crystallizes, conductivity and leakage current increase. The presence of impurities is not the only mechanism that may lead to a growth of crystals; Crystal growth can also be initiated in small areas of crystalline order in the dielectric. The conductivity of the crystallized structure has been reported to be higher than that of a dielectric in an amorphous state [14]. However, the latest findings suggest that the crystals themselves are good insulators with very limited conductivity [12, 13]. The exact conductivity mechanism related to the crystal phase is not yet fully understood. The increase in leakage current may still be caused by other mechanisms accelerated by the crystal growth. However, studies show that field crystallization may have only a limited impact on the end use of tantalum capacitors [12]. The temperature cycling of tantalum capacitors has been Figure 2. Structure of a tantalum capacitor [5]. studied before [11, 15] with capacitors subjected to temperature cycling in a range from -40°C to 85°C [15], - B. Effects of temperature and temperature cycling on 65°C to 125°C, and -65°C to 150°C [11]. Results indicate tantalum capacitors that tantalum capacitors are capable of withstanding up to Temperature, whether generated externally or internally, 500 cycles of temperature ranging from -65°C to 150°C. degrades the performance and reliability of tantalum However, different lots show different robustness under capacitors. The use of tantalum capacitors at high cycling conditions, and though parts may not fail formally temperatures has been studied, and manufacturing tantalum by exceeding specified limits, a significant degradation in capacitors for high-temperature applications is found to be the leakage current and breakdown voltages indicates an challenging [6, 7]. Mechanical stresses related to the increased propensity of some lots to failure after temperature changes during reflow-manufacturing and use temperature cycling. Cracking in the tantalum pentoxide of surface mount tantalum capacitors at high temperatures dielectric, which develops during temperature cycling, affect their performance and reliability and can account for results not only in increased leakage current, but also their breakdowns. Due to mismatch of the coefficients of increases the probability of scintillation breakdowns [11]. thermal expansion between the constituent materials, The results suggested that a harmful temperature cycling significant mechanical stresses develop in the bulk of effect can be achieved in a much shorter time than in 500 materials and at the interfaces. During heating, shear forces cycles [15]. are exerted on the anode wire. The molded case pushes on the lead frame in one direction and the pellet in another, generating forces that pull the wire away from the anode III. RELIABILITY TESTING structure. Once the device has passed though high Testing was divided into five tests, hereafter called Tests A, temperatures and its elements are shrinking while cooling, B, C, D, and E. Test A was a low temperature test in -40°C they may not fit together as they did before the expansion. temperature and lasted for 168h. Tests B and C were high Compressive forces may appear on the pellet structure and temperature tests, Test B was done in 85°C and Test C was produce fractures. In addition, these stresses may cause done in 125°C. Both tests lasted for 1000h. Tests D and E cracking in the tantalum pentoxide dielectric and/or were temperature cycling tests. Both tests lasted for 500 delaminations at the interfaces, resulting in different failure cycles and one cycle lasted for 0.5h. In test D, the modes of the components. A crack in the dielectric at a temperature changed between -40°C and 85°C and in Test corner or edge, when exposed to high stress, may lead to E, temperature changed between -40°C and 125°C. In all failure [9-11]. The cracking increases leakage current, tests, 18 capacitors were tested. Because the capacitors decreases breakdown voltage, and may cause short-circuits. were rated for an operating and non-operating temperature On the other hand, delaminations can raise the effective of -55˚C to 125˚C, they were tested here within their series resistance and thus increase power dissipation and operating limits. This was done in order to get information temperature of the capacitor, which can decrease its on their usability in such field conditions and to compare reliability. Severe delaminations may result in intermittent the effects of different temperatures and temperature contacts and open-circuit failures of the components [11]. www.ijmer.com 2308 | Page
  • 3. International Journal of Modern Engineering Research (IJMER) www.ijmer.com Vol.2, Issue.4, July-Aug. 2012 pp-2307-2310 ISSN: 2249-6645 cycling. All tests and their conditions can be seen in Table breakdown voltage of these capacitors and such conditions 1. should be no problem. Tests with higher temperatures (e.g. 150˚C) and lower temperatures (e.g. -55˚C) could be tried. Table 1. All tests and their test conditions. There were 5 failures after both tests D and E. This means that temperature cycling inside operating temperature limits has an effect on breakdown voltage of Test A B C D E these tantalum capacitors. This should be taken into account -40°C -40°C is these capacitors need to be stored or used in such Stresses -40°C 85°C 125°C 85°C 125°C conditions. However, none of the failures in any tests 500 * 500* occurred at voltages under 50V, which is capacitor´s Time 168h 1000h 1000h 0,5h 0,5h maximum operating voltage. In addition, there are a lot of non-failed components, so there is a lot of uncertainty that After all temperature tests, capacitors were tested for their should be taken into account. Tests with larger amount of breakdown voltage. The capacitors were tested for voltage components should be done. Also, a test with more radical that was slowly increased (rate of voltage increase: 1V per temperature cycling (e.g. -55˚C / +150˚C) could be tried. second) from 0V to 93V provided no failure occurred. The Failed components were further examined. They were voltage range was chosen because of equipment limitations. cross-sectioned and analyzed for failure by optical The accuracy of measurement was 1V microscopy (shown in Fig. 3). Cross-sectioning of all the failed tantalum capacitors showed redness in corners where IV. RESULTS AND DISCUSSION overheating had burned the capacitors’ internal materials Table 2 shows breakdown voltages for capacitors without and molding. testing and in Tests A-E. Accordingly, capacitors not Faults may occur in the oxide from stress imposed submitted to any kind of temperature testing did not fail at by changes in temperature. The oxide may have cracked voltages below 93V. This means that the capacitors can be with a slight shear. In addition, even if the pellet has not expected to withstand voltages of over 93V. fractured, it may have sustained enough compressive pressure for a fault site in the dielectric to grow or extend Table 2. Failure voltages for capacitors without testing and further into the dielectric and develop into a breakdown at in Tests A-E. these lower voltages. Field crystallization is one possible failure mechanism but it may have only a limited impact in the temperature cycling test and its effects on breakdown No Test Test A Test B Test C Test D Test E voltages. >93 >93 >93 86 50 57 >93 >93 >93 >93 79 63 >93 >93 >93 >93 81 72 >93 >93 >93 >93 84 72 >93 >93 >93 >93 91 89 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 Figure 3. An example of a cross-section of a failed >93 >93 >93 >93 >93 >93 capacitor. >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 >93 V. CONCLUSION >93 >93 >93 >93 >93 >93 A tantalum capacitor can be used in various different temperatures. Also radical temperature changes occur >93 >93 >93 >93 >93 >93 commonly in the field. In this paper, the effects of high and >93 >93 >93 >93 >93 >93 low temperature, and the effects of temperature changes on >93 >93 >93 >93 >93 >93 breakdown voltage of tantalum capacitors were tested. Low temperature and high temperature tests inside component´s >93 >93 >93 >93 >93 >93 operating temperature limits were not found to have an effect on breakdown voltages of these capacitors. However, There were no failures in Tests A and B and there was only a temperature cycling test inside component´s operating one failure in Test C. This means that such low temperature temperature limits affects tantalum capacitors in that it and high temperature did not have a significant effect on weakens their characteristics and lowers their breakdown www.ijmer.com 2309 | Page
  • 4. International Journal of Modern Engineering Research (IJMER) www.ijmer.com Vol.2, Issue.4, July-Aug. 2012 pp-2307-2310 ISSN: 2249-6645 voltages. More testing work needs be done in order to [8] B. Long, M. Prevallet, and J.D. Prymak, Reliability collect statistical data for conclusions. Such results would effects with proofing of tantalum capacitors, Proc. be useful in addition to these results, where conclusions are Capacitor and Resistor Technology Symposium, mostly done based on literature review. 2005, pp. 167-172. [9] J. Marshall and J. Prymak, Surge step stress testing REFERENCES of tantalum capacitors, Proc. Capacitor and Resistor [1] D. Kececioglu, Reliability engineering handbook, Technology Symposium, 2001, pp. 181-187. vol. 1 and 2 (New Jersey, Prentice Hall, Inc., 1991) [10] D.M. Edson, and J.B. Fortin, Improving thermal [2] JEDEC standard. High Temperature Storage Life, shock resistance of surface mount tantalum JESD22-A103. Published by JEDEC Solid State capacitors, Proc. Capacitor and Resistor Technology Technology Association, Arlington, 2004. Symposium, 1994, pp. 169-176. [3] JEDEC standard. Low Temperature Storage Life, [11] A. Teverovsky, Effect of temperature cycling and JESD22-A119. Published by JEDEC Solid State exposure to extreme temperatures on reliability of Technology Association, Arlington, 2004. solid tantalum capacitors, NASA Electronic Parts [4] JEDEC standard. Temperature Cycling, JESD22- and Packaging (NEPP) Program, 2007, 70p. A104D (2009). Published by JEDEC Solid State [12] T. Zednicek, J. Sikula, and H. Leibovitz, A study of Technology Association, Arlington, 2009. field crystallization in tantalum capacitors and its [5] Solid tantalum chip capacitors, T494 SERIES–Low effect on DCL and reliability, Proc. Capacitor and ESR, Industrial grade. KEMET Electronics Resistor Technology Symposium, 2009, 16p. Corporation. Datasheet. 7p. [13] E. Atanassova and A. Paskaleva, Breakdown fields [6] E. Reed, Tantalum chip capacitor reliability in high and conduction mechanisms in thin Ta2O5 layers on surge and ripple current applications, Proc. Si for high density DRAMs, Microelectronics Electronic Components and Technology Conference, Reliability, 42(2), 2002, 157-173. 1994, pp. 861-868. [14] S. Ezhilvalavan and T.-Y. Tseng, Conduction [7] Y. Freeman, R. Hahn, P. Lessner, and J. Prymak, mechanisms in aamorphous and crystalline Ta2O5 Reliability and critical applications of tantalum thin films, Journal of Applied Physics, 83(9), 1998, capacitors, Proc. Capacitor and Resistor Technology 4797-4801. Europe Symposium, 2007, 11p. [15] J. Virkki and S. Tuukkanen, Testing the effects of temperature cycling on tantalum capacitors, Microelectronics Reliability, 50(8), 2010, 1121-112 www.ijmer.com 2310 | Page