To study the Volt-Ampere Characteristics of a Silicon P-N Junction Diode in forward and reverse bias conditions.

1. Study of V-I Characteristics of PN
Junction Diode
Experiment - 9
Department of Electrical &
Electronics Engineering

2. Aim
• To study the Volt-Ampere Characteristics of
Silicon P-N Junction Diode in forward and
reverse bias conditions.

3. Apparatus
• 1 kΩ Resistor - 01
• Diode (1N4007) - 01
• NI ELVIS II kit - 01
• Connecting wires - As Required
• Variable DC power supply (virtual) - 01
• Digital multi meter (virtual) - 01

4. Circuit Diagram

5. Observation Tables

6. V-I Characteristics Graph

7. Conclusion
• • In forward bias, the current increases
exponentially with voltage after the threshold
(around 0.6V).
• • In reverse bias, the current remains very low,
indicating negligible conduction.
• • This behavior verifies the typical
characteristics of a silicon PN junction diode.