Radiation exposure can negatively impact CMOS circuits in several ways: 1) Threshold voltages (Vt) for NMOS and PMOS transistors increase, reducing transistor switching speeds and increasing leakage currents. 2) Carrier mobility (μ) decreases over time, slowing the rising and falling edges of signals and increasing dynamic power consumption. 3) Increased leakage currents between drain/source and between adjacent transistors can prevent proper switching and increase static power usage. 4) Timing issues may cause glitches or circuits to fail to meet timing requirements for synchronous designs. Additional design margins are recommended for space applications.