1. Patent Investigation Project
R&D Dept.
Li WenbingLi Wenbing
2010-10-31

2. ??EPISTAR ??

3. EPISTAR is
SALE Dec.08 EPISTAR
OptoTech
EPISTAR is
playing at the
big table!
p
Tyntek
Huga
FOREPI
Arima
EPISTAR h i
EPISTAR
Biggest LED
Manufactory
Tekcore
Genesis
Photonics
EPISTAR chairman
Biing-jye Lee
Manufactory
in TW.AlGaInP
Hi-Bright
Holds over
InGaN
Holds over
1,000
Patents
ACLED
Patents

4. IPIP
JUST A PAPERJUST A PAPER

5. A SHIELD
Protect the corporation from
infringement
A SPEAR
A SHIELD infringement
Block possible competitors
A STRATEGY
R&D strategy, Market strategy,
Product strategy
ASSET It is dollar! $$

6. Philips TOYODAPhilips
GOSEI
EPISTAR
Lynk
Lab
2009 05 26
2005-08-15
Merge in a
Lab
2009-05-26
Win appeal in
ITC process
g
Stork-to-stork
transaction
Nichia
PHILIPS
LUMILEDS UEC

7. EPISTAR
PHILIPS
LUMILEDLUMILED
Settle Lawsuit
on AlGaInP
ITC reject
P.L.
ITC No
infringement
of P.L.’s
patents2004-07-16 2007-01-24
2007-05-10
CAFC stays Limited
exclusion order by
ITC
Sue P.L. stopSue P.L. stop
Unfair
competition
EPISTAR
WIN!!!
2009 05 262007-07-19 2007
competition
2007-10-15
2009-05-26

8. PATENTS IN
MAINLANDMAINLAND
CHINA (186)( )

9. PATENTS NUMBER FOR EPISTAR
180
200
IN MAINLAND CHINA
Data from:
http://www.sipo.gov.cn/sipo2008/zljs/
140
160
TENT
p p g p j
100
120
OFPAT
60
80
UMBER
20
40
NU
1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
0
YEAR

10. NEW APPLIED PATENT PER YEAR FOR EPISTAR
IN MAINLAND CHINA
70
ATENT
IN MAINLAND CHINA
FROM 1999 to 2009
DATA FROM:
50
60
LIEDPA
http://www.sipo.gov.cn/sipo2008/zljs/
40
WAPPL
20
30
OFNEW
10
MBERO
1998 2000 2002 2004 2006 2008 2010
0
YEAR
NUM

11. PATENT INREASE RATE PER YEAR FOR EPISTAR
IN MAINLAND CHINA
2.5
AR
IN MAINLAND CHINA
Data from:
http://www.sipo.gov.cn/sipo2008/zljs/
2
ERYEA
http://www.sipo.gov.cn/sipo2008/zljs/
1.5
ATEPE
1
ASERA
0.5
INREA
2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
0
YEAR

12. TECHNOLOGY FOCUS OF
EPISTAR IN CHINA
37% Manufacture
BASED ON PATENT STRATAGE
28%
Device&Cell
Method
5%
4%Others
26%
5%
Infrastructure
&Package
Materials&Related
&Package

13. PATENTS IN US
(G t d 110)(Granted:110)
(PUB.:75)( )

14. 120
NUMBER OF LICENSED PATENT FOR EPISTAR IN US
100
120
ATENT
Data from:
http://www.patft.uspto.gov/
80
SEDPA
60
LICENS
40
BEROF
0
20
NUMB
1998199920002001200220032004200520062007200820092010
0
YEAR

15. LICENSED PATENTS PER YEAR OF EPISTAR IN US
20
25
EAR
Data from:
http://patft.uspto.gov/
15
20
SPERYE
10
15
PATENTS
5
10
ENSEDP
1998199920002001200220032004200520062007200820092010
0
LICE
1998199920002001200220032004200520062007200820092010
YEAR

16. NT INCREASE RATE OF LICENSEND PATENT
FOR EPISTAR IN US
1.5
DPATEN
O S US
Data from:
http://www.patft.uspto.gov/
1
ENSENDOFLICE
0.5
ERATEO
1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010
0
CREASE
1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010
YEAR
INC

17. 2%
7%OthersTECHNOLOGY FIELD OF
EPISTAR PATENT IN US
9%
2%
Assembly,
Material
EPISTAR PATENT IN US
Appratus,
Package
50%
33%
Device,Cell,Array
33%
ManufactureManufacture
Method

18. Merge UEC (AlGaInP) ~50 patentsMerge
LAW ISSUE Agree
UEC (AlGaInP) 50 patents
LYNK, PHILIP, NICHIA,
TOYODA GOSEI
Infringe
TOYODA GOSEI
PHILIP LUMILED:
US5164798, 5008718 Focus
EPISTAR
REVIEW
g
on AlGaInP
Device & Cell: 69
Mainland CN
(186)
REVIEW
Manufacture: 53
Package: 48
PATENT
g
Device (Granted): 69
M f t (G t d) 57US (185) Manufacture (Granted): 57
Package (Granted): 26

19. REFERENCE
1. http://www.epistar.com.tw/news-e.htm
2. http://en.wikipedia.org/wiki/Epistar#cite note-2. http://en.wikipedia.org/wiki/Epistar#cite_note
Commonwealth-0
3. http://www.cnledw.com/info/newsdetail-11940.htm
4 http://www digitimes com/news/a20090925PM200 h4. http://www.digitimes.com/news/a20090925PM200.h
tml
5. http://www.patft.uspto.gov/
6 http://www sipo gov cn6. http://www.sipo.gov.cn