The document outlines a course on VLSI technology taught by Dr. Vivek Garg at the S. V. National Institute of Technology, Surat. It includes course materials such as relevant journals, microscopy techniques, and various spectroscopy methods for analyzing elemental and chemical information. The content also presents graphs and data related to band alignment and energy levels from different spectroscopy techniques.

1. VLSI Technology
(EC 325)
Dr. Vivek Garg
Department of Electronics Engineering
S. V. National Institute of Technology (SVNIT)
Surat
email: vivekg@eced.svnit.ac.in; vivekgarg0101@gmail.com

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Course Outline

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Course Text and Materials
Additional:
• Relevant Journals and Conferences
• Materials and Sources shared in the lectures

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FESEM/ESEM
Optical Microscope

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FESEM/ESEM

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FESEM/ESEM

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FESEM/ESEM

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FESEM/ESEM

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FESEM/ESEM
Secondary Electrons Back Scattered Electrons

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FESEM/ESEM

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FESEM/ESEM

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FESEM/ESEM

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Energy Dispersive X-Ray Spectroscopy
Element Weight% Atomic%
Cu K 4.02 26.01
Ga K 1.41 8.33
Se L 8.28 43.17
In L 6.27 22.48
Totals 19.98
Provides Elemental and Chemical Information

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X-ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS)
Inverse Photoelectron Spectroscopy (IPES)
KE = hv – BE - Ø
XPS/UPS/IPS

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X-ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS)
Inverse Photoelectron Spectroscopy (IPES)

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X-ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS)
Inverse Photoelectron Spectroscopy (IPES)

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XPS/UPS
0.0 1.5 3.0 4.5 6.0
0
2
4
6
8
CIGSe
Ef
VBOn
Intensity
(a.u.)
Energy (eV)
0 2 4
0
10
20
30
GZO
Ef
VBOn
Intensity
(a.u.)
Energy (eV)
∆𝐸𝐶 = 𝐸𝑔
𝐺𝑍𝑂
− 𝐸𝑔
𝐶𝐼𝐺𝑆𝑒
− ∆𝐸v
0 10 20 30 40 50 60
0.2
0.4
0.6
0.8
1.0
(Ga3d -Se3d)
Valence
Band
Zn
3d
Se
3d
Ga
3d
Intensity
(a.u.)
Energy (eV)
GZO/CIGSe
∆𝐸𝑉 = 𝐸𝑆𝑒 3𝑑
𝐶𝐼𝐺𝑆𝑒
− 𝐸𝑉𝐵𝑂𝑛
𝐶𝐼𝐺𝑆𝑒
− 𝐸𝐺𝑎 3𝑑
𝐺𝑍𝑂
− 𝐸𝑉𝐵𝑂𝑛
𝐺𝑍𝑂
+ ∆𝐸𝐶𝐿
0 10 20 30 40 50 60
0
2
4
6
8
10
12
Se
3d
CIGSe
VBOn
Intensity
(a.u.)
Energy (eV)
(Se3d - VBOn)
0 10 20 30 40
0
50
100
150
200
Ga
3d
(Ga3d - VBOn)
GZO
VBOn
Intensity
(a.u.)
Energy (eV)
Band Alignment

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Inverse Photoelectron Spectroscopy (IPES)
-4 -2 0 2 4
0
20
40
60
80
100
E
f
(eV)
CBM 0.82 eV
IPES
Normalized
intensity
Energy (eV)
UPS He I
VBM 0.63 eV
Band
gap
=
1.45
eV
-------------------------------
------
Ec
Ev
Ef
Eg = 1.45 eV
0.82 eV using IPES
0.63 eV using UPS
-1 0 1 2 3 4 5 6
0.0
0.3
0.7
1.0
Energy (eV)
Ef
VBon
GMZO
Intensity
(a.u.)
0 10 20 30 40 50 60
0
2
4
6
8
10
12
14
16
18
20
22
24
Mg
2p
Ga
3d
Zn
3d
Valence
Band
Intensity
(a.u.)

1000
Energy (eV)
GMZO
0 200 400 600 800 1000 1200
0
50
100
150
200
250
Zn
2p
Zn
3s
Zn
3p
O
1s
Ga
3s
Zn
3d
Ga
2p
3/2
Intensity
(a.u.)

1000
Binding Energy (eV)

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