Studied on structural, surface morphology and magnetotransport properties of NCMO thin films prepared by csd method
1. Abstract Introduction
STUDIES ON STRUCTURAL, SURFACE MORPHOLOGY CMR: 1993
AND MAGNETOTRANSPORT PROPERTIES OF The manganese oxides of general formula RE1- MR (%)=[ρ(H)-ρ(0)]/ρ(H)*100
xMxMnO3 (RE = La, Nd, Pr….rare earth, M = Ca,
Nd0.7Ca0.3MnO3 THIN FILMS PREPARED BY CHEMICAL
SOLUTION DEPOSITION METHOD
Sr….alkaline metal ions) have remarkable interrelated
Phenomena Exhibited by the
structural, magnetic and transport properties. Thin films of Manganites
Jessica R. Chocha, Pooja A. Chhelavda, V. Ganesan, R. Nd0.7Ca0.3MnO3 (NCMO) have been fabricated by Chemical
Rawat and J. A. Bhalodia Solution Deposition method. The CSD grown films have Colossal Magnetoresistance (CMR)
MI transition concurrent with FM-PM transition
electronic and magnetotransport properties which are Charge Ordering , Orbital Ordering
1Department of Physics, Saurashtra University, Rajkot comparable to those of films prepared by the Pulsed Laser Phase Separation
2UGC-DAE Consortium for Scientific Research, Indore Deposition (PLD) technique and to those of the bulk single
crystal samples. NCMO films annealed at various
Experimental Method temperatures were grown on LAO (LaAlO3) (100) substrate
and their structural, surface morphological and magneto
transport properties were studied through X-ray diffraction
• Starting element: Nd, Ca, Mn (XRD), Atomic Force Microscopy (AFM) and Magneto R- Atomic force microscopy
acetates
• Mixing with 1.5ml acetic acid + DI
T measurements. NCMO800ºC
mixture
water RMS 18.52nm
Z Amplitude
Results & Discussions 151.26
• Heating on stirrer at 80ºC Max. nm- 95.6
• Spin coating unit 6000 rpm, 20s X-ray Diffraction NCMO1000ºC
Stirrer
320000
300000
RMS 18.42nm
LAO(200)
Nd0.7Ca0.3MnO3 280000 NCMO1000 Z Amplitude
NCMO800
260000 112.66
LAO (100) Cubic 240000 Max. nm-40.2
• Put the film in a boat for the drying at a=b=c=3.7891Å 220000
120ºC ,30min 200000
NCMO 800 Fourier Transform
• Put into furnace for pyrolysis 350ºC,
Intensity
Furnace
180000
30 min
LAO(100)
Grain size 16nm 160000
Average events 655.36
140000
NCMO 1000 120000
Roughness events Roughness events
Grain size 17nm 100000
• Put into furnace for annealed at 714.886 642.189
80000
different temp.,9h with oxygen air Average slope Average slope
Full Width at Half Max.
LAO(100)
60000
• Then repeat IV-VI for another layer (FWHM) 40000 (events/nm) -11.62 (events/nm )11.6
Annealing
repeating this we can deposit (a) 0.3564 (b) 0.5338 20000
0
20 30 40 50 60 70 80
2
Resistivity & Magnetotransport Properties Conclusion References
[1] Shaowei Jin, Wenbin Wu, H M Weng, B J Ye and X Y
0.0005
120000
0T M-I Transition The present investigation shows that it is possible to grow good quality oriented
Zhou J. Phys. D: Appl.Phys.39 (2006)
0T
1T
100000 5T
8T films using a low cost technique like the CSD method which does not require
(mho cm)
0.0004 80000
1T
complicated instrumentation.
60000 Magnetic field Curie
0.0003 40000
5T
Temperatures The Nd0.7Ca0.3MnO3 (Annealing temperatures 800ºC & 1000ºC) films with good [2] In-Bo SHIM, Young-Jai at, Se-Young Choi J K
cm)
0T 277K
20000
0.0002
0
0 50 100 150 200 250 300 8T
(100) orientation have been successfully prepared on LAO (100) single crystal
substrate by the CSD method. The XRD results revealed that no impurity phases
Phys.Soc. Vol. 37, Oct (2000)
1T 288K
Temperature K
existed and very good crystalline. The intensity of the (100) peaks increased with
0.0001
5T 295K the annealing temperature. [3] H. Y. Hwang, S.-W. Cheong, N. P. O N. p. and
0.0000
0 50 100 150 200 250 300
8T 300K UP The NCMO were composed of uniformly distributed grains rounded shape in Batlogg. Phys. Rev. Lett. 77, 2041
Temperature (K)
nanometer range and the clear grain growth was observed with increasing
950 0.16
annealing temperature. Surface roughness values suggest that the surface
900
0.14
1T
morphologies are very smooth for all the films and its scaling with length show that [4] Goodenough J B 1997 J. Appl. Phys. 81
0.12
the surface of the films are self affine.
5T
Resistance
850 0.10
All the films show large MR and the expected shift to metal-insulator transition
Acknowledgement
MR%
0.08
800
0.06
towards higher temperature. The MR data suggested that the films are physically
750 0.04
8T
homogeneous that is the insulator behavior not to poor film quality.
This work is supported by the UGC-DAE Scientific Research centre Indore and
0.02 author is also thankful to Dr. N. P. Lalla for XRD measurements data
700
-10 -8 -6 -4 -2 0 2 4 6 8 10 0.00
H(T) 0 50 100 150 200 250 300