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Device Modeling Report



COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL
PART NUMBER: 1SS184
MANUFACTURER: TOSHIBA




                    Bee Technologies Inc.



      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                     1
Circuit Configuration


         U1
         1SS184_p




              All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                             2
DIODE MODEL PARAMETERS

PSpice model
                                       Model description
 parameter
     IS          Saturation Current
     N           Emission Coefficient
     RS          Series Resistance
    IKF          High-injection Knee Current
    CJO          Zero-bias Junction Capacitance
     M           Junction Grading Coefficient
     VJ          Junction Potential
    ISR          Recombination Current Saturation Value
     BV          Reverse Breakdown Voltage(a positive value)
    IBV          Reverse Breakdown Current(a positive value)
     TT          Transit Time
    EG           Energy-band Gap




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                              3
Forward Current Characteristic

Circuit Simulation Result


              1.0A




             100mA




              10mA




             1.0mA




             100uA




              10uA
                     0V           0.2V        0.4V        0.6V   0.8V     1.0V   1.2V
                          I(R1)
                                                          V_V1




Evaluation Circuit



                                                 R1


                                                 0.001m

                                         V1                         U1
                            0V                                      1SS184_p




                                     0




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                        4
Comparison Graph

Circuit Simulation Result




Simulation Result

                                           VF (V)
             IF (A)                                                      %Error
                             Measurement            Simulation
                0.0001                 0.493                 0.492              -0.09
                0.0002                 0.528                 0.526              -0.40
                0.0005                 0.571                 0.571              0.09
                    0.001              0.607                 0.605              -0.35
                    0.002              0.641                 0.640              -0.25
                    0.005              0.685                 0.686              0.23
                      0.01             0.724                 0.724              0.06
                      0.02             0.765                 0.766              0.13
                      0.05             0.833                 0.834              0.17
                       0.1             0.909                 0.908              -0.08




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                        5
Capacitance Characteristic

Circuit Simulation Result

            2.0p




            1.6p




            1.2p




            0.8p




            0.4p




                0
               100mV             1.0V                        10V              100V
                   -I(X_U1.D_D1)/(85V/1us)
                                                      V(R)




Evaluation Circuit


                                                 V2
                                         R

                                                 0

                            V1 = 0       V1                        U1
                            V2 = 85                                1SS184_p
                            TD = 0
                            TR = 1us
                            TF = 100ns
                            PW = 100us
                            PER = 10m


                                             0




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                     6
Comparison Graph

Circuit Simulation Result




Simulation Result

                                           C (pF)
             VR (V)                                                      %Error
                            Measurement             Simulation
                      0.1              0.902                 0.898              -0.51
                      0.2              0.898                 0.896              -0.17
                      0.5              0.889                 0.892              0.34
                       1               0.884                 0.884              -0.03
                       2               0.867                 0.873              0.70
                       5               0.844                 0.847              0.31
                      10               0.818                 0.817              -0.15
                      20               0.784                 0.781              -0.46
                      50               0.733                 0.727              -0.81
                      80               0.693                 0.700              1.01




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                        7
Reverse Recovery Characteristic

Circuit Simulation Result

                   400mA




                   200mA




                      0A




                  -200mA




                  -400mA
                      0.96us     0.98us       1.00us          1.02us   1.04us 1.06us
                           I(R1)
                                                       Time



Evaluation Circuit

                                                 R1



                           V1 = -9.4V            50
                           V2 = 10.99V
                           TD = 0ns      V1
                           TR = 3ns                                    U1
                           TF = 2.85ns                                 1SS184_p
                           PW = 1us
                           PER = 100us




                                         0


Compare Measurement vs. Simulation

       Parameter           Unit     Measurement               Simulation          %Error
            trj            ns                 8.640                    8.643           0.03
           trb             ns                 5.280                    5.214           -1.26
            trr            ns                 13.92                    13.85           -0.46

                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                               8
Reverse Recovery Characteristic                                                Reference




                                                   Measurement




Trj = 8.64(ns)
Trb = 5.28(ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50




                                                         Example




                               Relation between trj and trb




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                       9

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SPICE MODEL of 1SS184 (Professional Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL PART NUMBER: 1SS184 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  • 2. Circuit Configuration U1 1SS184_p All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  • 3. DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  • 4. Forward Current Characteristic Circuit Simulation Result 1.0A 100mA 10mA 1.0mA 100uA 10uA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.001m V1 U1 0V 1SS184_p 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  • 5. Comparison Graph Circuit Simulation Result Simulation Result VF (V) IF (A) %Error Measurement Simulation 0.0001 0.493 0.492 -0.09 0.0002 0.528 0.526 -0.40 0.0005 0.571 0.571 0.09 0.001 0.607 0.605 -0.35 0.002 0.641 0.640 -0.25 0.005 0.685 0.686 0.23 0.01 0.724 0.724 0.06 0.02 0.765 0.766 0.13 0.05 0.833 0.834 0.17 0.1 0.909 0.908 -0.08 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  • 6. Capacitance Characteristic Circuit Simulation Result 2.0p 1.6p 1.2p 0.8p 0.4p 0 100mV 1.0V 10V 100V -I(X_U1.D_D1)/(85V/1us) V(R) Evaluation Circuit V2 R 0 V1 = 0 V1 U1 V2 = 85 1SS184_p TD = 0 TR = 1us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
  • 7. Comparison Graph Circuit Simulation Result Simulation Result C (pF) VR (V) %Error Measurement Simulation 0.1 0.902 0.898 -0.51 0.2 0.898 0.896 -0.17 0.5 0.889 0.892 0.34 1 0.884 0.884 -0.03 2 0.867 0.873 0.70 5 0.844 0.847 0.31 10 0.818 0.817 -0.15 20 0.784 0.781 -0.46 50 0.733 0.727 -0.81 80 0.693 0.700 1.01 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
  • 8. Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 0.96us 0.98us 1.00us 1.02us 1.04us 1.06us I(R1) Time Evaluation Circuit R1 V1 = -9.4V 50 V2 = 10.99V TD = 0ns V1 TR = 3ns U1 TF = 2.85ns 1SS184_p PW = 1us PER = 100us 0 Compare Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj ns 8.640 8.643 0.03 trb ns 5.280 5.214 -1.26 trr ns 13.92 13.85 -0.46 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
  • 9. Reverse Recovery Characteristic Reference Measurement Trj = 8.64(ns) Trb = 5.28(ns) Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9