1. Page 1 of 3/Users/Ricardillo/Google Drive/Do…/EE 129D/New folder/1_5umNMOS.txt
Saved: 7/5/16, 3:19:40 PM Printed For: Richard Gaona
Copyright 2016 Richard A Gaona1
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TITLE 1.8 Micron N-Channel MOSFET3
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COMMENT Specify a rectangular mesh5
MESH SMOOTH=16
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COMMENT width is 4 micron decreasing H increases mesh res8
X.MESH WIDTH=4.0 H1=0.06259
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COMMENT oxide thickness11
Y.MESH N=1 L=-0.02512
Y.MESH N=3 L=0.013
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COMMENT substrate thickness and relative mesh res15
Y.MESH DEPTH=1.0 H1=0.12516
Y.MESH DEPTH=1.0 H1=0.25017
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COMMENT Eliminate some unnecessary substrate nodes19
ELIMIN COLUMNS Y.MIN=1.120
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COMMENT Increase source/drain oxide thickness using SPREAD22
SPREAD LEFT WIDTH=0.9 UP=1 LO=3 THICK=.1 ENC=223
SPREAD RIGHT WIDTH=0.9 UP=1 LO=3 THICK=.1 ENC=224
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COMMENT Use SPREAD again to prevent substrate grid distortion26
SPREAD LEFT WIDTH=100 UP=3 LO=4 Y.LO=0.12527
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COMMENT Specify oxide and silicon regions29
REGION SILICON30
REGION OXIDE IY.MAX=331
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COMMENT Electrode definition gate to spec for part 3 change gate length33
ELECTR NAME=Gate X.MIN=1.5 X.MAX=2.5 TOP34
ELECTR NAME=Substrate BOTTOM35
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COMMENT source and drain contact37
ELECTR NAME=Source X.MAX=1.09 IY.MAX=338
ELECTR NAME=Drain X.MIN=2.91 IY.MAX=339
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COMMENT Specify impurity profiles and fixed charge41
COMMENT substrate doping42
PROFILE P-TYPE N.PEAK=3E15 UNIFORM OUT.FILE=ph1nmosDS43
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COMMENT channel doping surface doping [] corresponds to y.max45

2. Page 2 of 3/Users/Ricardillo/Google Drive/Do…/EE 129D/New folder/1_5umNMOS.txt
Saved: 7/5/16, 3:19:40 PM Printed For: Richard Gaona
PROFILE P-TYPE N.PEAK=3E16 Y.JUNC=.25 XY.RAT=.75 Y.MAX=046
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COMMENT source rat corresponds to lateral factor, make with wider48
PROFILE IMPURITY=AS N.PEAK=2E20 Y.JUNC=.34 X.MIN=0.0 WIDTH=.549
+ XY.RAT=2.4 Y.MAX=050
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COMMENT drain52
PROFILE IMPURITY=AS N.PEAK=2E20 Y.JUNC=.34 X.MIN=3.5 WIDTH=.553
+ XY.RAT=2.4 Y.MAX=054
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PLOT.2D GRID TITLE="n-Channel Initial Grid" FILL SCALE56
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COMMENT Regrid on doping58
REGRID DOPING LOG IGNORE=OXIDE RATIO=2 SMOOTH=159
+ IN.FILE=ph1nmosDS60
PLOT.2D GRID TITLE="n-Channel Doping Regrid" FILL SCALE61
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COMMENT Specify contact parameters for part 2 a switch the poly type63
CONTACT NAME=Gate N.POLY64
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COMMENT Specify physical models to use66
MODELS CONMOB FLDMOB SRFMOB267
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COMMENT Symbolic factorization, solve, regrid on potential69
SYMB CARRIERS=070
METHOD ICCG DAMPED71
SOLVE72
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REGRID POTEN IGNORE=OXIDE RATIO=.2 MAX=1 SMOOTH=174
+ IN.FILE=ph1nmosDS75
+ OUT.FILE=ph1nmosMS76
PLOT.2D GRID TITLE="n-Channel Potential Regrid" FILL SCALE77
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COMMENT Solve using the refined grid, save solution for later use79
SYMB CARRIERS=080
SOLVE OUT.FILE=ph1nmosS81
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COMMENT Read in simulation mesh83
MESH IN.FILE=ph1nmosMS84
COMMENT Read in saved solution85
LOAD IN.FILE=ph1nmosS86
COMMENT Use Newtonís method for the solution87
SYMB NEWTON CARRIERS=1 ELECTRONS88
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COMMENT Solve for Vds=0.1 & Vds=1.5 for part 1a90

3. Page 3 of 3/Users/Ricardillo/Google Drive/Do…/EE 129D/New folder/1_5umNMOS.txt
Saved: 7/5/16, 3:19:40 PM Printed For: Richard Gaona
+ and then ramp gate91
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SOLVE V(Drain)=0.193
LOG OUT.FILE=ph1nmos94
SOLVE V(Gate)=-.5 ELEC=Gate VSTEP=.2 NSTEP=1095
COMMENT Plot Ids vs. Vgs96
PLOT.1D Y.AXIS=I(Drain) X.AXIS=V(Gate) POINTS COLOR=297
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extract mos.param99
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